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1. 发明授权

US10811263B2 Method for forming semiconductor device structure with etch stop layer 有权
公开(公告)号：US10811263B2
公开(公告)日：2020-10-20
申请号：US16730343
申请日：2019-12-30
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Ya-Ling Lee , Shing-Chyang Pan , Keng-Chu Lin , Wen-Cheng Yang , Chih-Tsung Lee , Victor Y. Lu
IPC分类号： H01L21/285 , H01L21/8234 , H01L21/3065 , H01L21/02 , H01L21/768
摘要： A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

2. 发明申请

US20170314121A1 PVD APPARATUS AND METHOD WITH DEPOSITION CHAMBER HAVING MULTIPLE TARGETS AND MAGNETS 审中-公开
公开(公告)号：US20170314121A1
公开(公告)日：2017-11-02
申请号：US15651639
申请日：2017-07-17
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chung-En Kao , Ming-Chin Tsai , You-Hua Chou , Chen-Chia Chiang , Chih-Tsung Lee , Ming-Shiou Kuo
IPC分类号： C23C14/35 , H01J37/34
CPC分类号： C23C14/352 , H01J37/3405 , H01J37/3417
摘要： A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

3. 发明授权

US09218998B2 Electrostatic chuck with multi-zone control 有权
标题翻译：静电吸盘多区控制
公开(公告)号：US09218998B2
公开(公告)日：2015-12-22
申请号：US14505529
申请日：2014-10-03
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
摘要翻译：用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。电介质层具有由不同介电材料形成的场和一个或多个区域。一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

4. 发明授权

US09214514B2 Mechanisms for forming semiconductor device having stable dislocation profile 有权
标题翻译：用于形成具有稳定位错分布的半导体器件的机理
公开(公告)号：US09214514B2
公开(公告)日：2015-12-15
申请号：US14080220
申请日：2013-11-14
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
发明人： Min-Hao Hong , Shiu-Ko Jangjian , Chih-Tsung Lee , Miao-Cheng Liao
IPC分类号： H01L21/336 , H01L21/70 , H01L21/8238 , H01L27/085 , H01L27/092 , H01L29/08 , H01L29/66 , H01L29/78
CPC分类号： H01L29/0847 , H01L29/165 , H01L29/66636 , H01L29/7847 , H01L29/7848
摘要： Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions.
摘要翻译：提供了与用于提供稳定位错图的机制有关的实施例。提供具有栅叠层的半导体衬底。在栅极叠层的一侧形成开口。在开口中形成外延生长结构的第一部分。外延生长结构的第二部分形成在开口中。外延生长结构的第一部分和第二部分沿着不同的方向形成。

5. 发明授权

US10522360B2 Method for forming semiconductor device structure with etch stop layer 有权
公开(公告)号：US10522360B2
公开(公告)日：2019-12-31
申请号：US15730934
申请日：2017-10-12
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Ya-Ling Lee , Shing-Chyang Pan , Keng-Chu Lin , Wen-Cheng Yang , Chih-Tsung Lee , Victor Y. Lu
IPC分类号： H01L21/285 , H01L21/8234 , H01L21/3065 , H01L21/02 , H01L21/768
摘要： A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber. The method also includes introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method further includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. In addition, the method includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.

6. 发明授权

US10190209B2 PVD apparatus and method with deposition chamber having multiple targets and magnets 有权
公开(公告)号：US10190209B2
公开(公告)日：2019-01-29
申请号：US15651639
申请日：2017-07-17
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chung-En Kao , Ming-Chin Tsai , You-Hua Chou , Chen-Chia Chiang , Chih-Tsung Lee , Ming-Shiou Kuo
IPC分类号： C23C14/35 , H01J37/34
摘要： A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

7. 发明申请

US20150016011A1 Electrostatic Check with Multi-Zone Control 有权
标题翻译：多区域控制静电检查
公开(公告)号：US20150016011A1
公开(公告)日：2015-01-15
申请号：US14505529
申请日：2014-10-03
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
摘要翻译：用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。电介质层具有由不同介电材料形成的场和一个或多个区域。一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

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