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1. 发明授权

US09418992B2 High performance power cell for RF power amplifier 有权
标题翻译：用于射频功率放大器的高性能功率单元
公开(公告)号：US09418992B2
公开(公告)日：2016-08-16
申请号：US15063310
申请日：2016-03-07
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin , Tzu-Jin Yeh , Chewn-Pu Jou
IPC分类号： H01L27/088 , H01L21/8236 , H01L29/66 , H01L29/812 , H01L29/78 , H01L29/06
CPC分类号： H01L27/0883 , H01L21/8236 , H01L21/8238 , H01L21/823821 , H01L21/823828 , H01L21/823885 , H01L27/092 , H01L27/0922 , H01L27/095 , H01L29/0649 , H01L29/66666 , H01L29/66848 , H01L29/7827 , H01L29/812 , H03F1/223 , H03F3/213
摘要： A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the Schottky MOSFET. The source node of the enhancement MOSFET and source node of the Schottky MOSFET are connected together to form the power cell.
摘要翻译：为RF功率放大器设计的功率单元包括形成在P基板中的P阱中的增强型MOSFET和形成在相同P基板中的N阱中的肖特基MOSFET，源极之间具有水平或垂直通道，漏极和栅电极。增强型MOSFET的源节点和肖特基MOSFET的源极节点连接在一起形成功率单元。

2. 发明授权

US11855012B2 Devices and methods for enhancing insertion loss performance of an antenna switch 有权
公开(公告)号：US11855012B2
公开(公告)日：2023-12-26
申请号：US17713907
申请日：2022-04-05
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin
IPC分类号： H01L23/66 , H01L29/06 , H01L23/528 , H01L29/417 , H01L27/088
CPC分类号： H01L23/66 , H01L23/528 , H01L27/088 , H01L29/0603 , H01L29/0692 , H01L29/417
摘要： Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

3. 发明授权

US10861804B2 Devices and methods for enhancing insertion loss performance of an antenna switch 有权
公开(公告)号：US10861804B2
公开(公告)日：2020-12-08
申请号：US16364439
申请日：2019-03-26
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin
IPC分类号： H01L33/26 , H01L23/66 , H01L29/06 , H01L23/528 , H01L29/417 , H01L27/088
摘要： Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

4. 发明授权

US09071203B2 CMOS cascode power cells 有权
标题翻译： CMOS共源共栅电源
公开(公告)号：US09071203B2
公开(公告)日：2015-06-30
申请号：US13939209
申请日：2013-07-11
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tzu-Jin Yeh , Chewn-Pu Jou , Jun-De Jin , Hsieh-Hung Hsieh , Chia-Chung Chen
IPC分类号： H03F3/14 , H03F3/213 , H01L21/8238 , H03F1/22
CPC分类号： H03F3/213 , H01L21/8238 , H01L27/092 , H01L2924/3011 , H03F1/223
摘要： A circuit includes a first CMOS device forming a gain stage of a power amplifier and a second CMOS device forming a voltage buffer stage of the power amplifier. The first CMOS device includes a first doped well formed in a substrate, a first drain region and a first source region spaced laterally from one another in the first doped well, and a first gate structure formed over a first channel region in the first doped well. The second CMOS device includes a second doped well formed in the semiconductor substrate such that the first doped well and the second is disposed adjacent to the second doped well. A second drain region and a second source region are spaced laterally from one another in the second doped well, and a second gate structure formed over a second channel region in the second doped well.
摘要翻译：电路包括形成功率放大器的增益级的第一CMOS器件和形成功率放大器的电压缓冲级的第二CMOS器件。第一CMOS器件包括形成在衬底中的第一掺杂阱，第一漏极区和在第一掺杂阱中彼此横向间隔开的第一源极区，以及形成在第一掺杂阱中的第一沟道区上的第一栅极结构。第二CMOS器件包括在半导体衬底中形成的第二掺杂阱，使得第一掺杂阱和第二掺杂阱邻近第二掺杂阱设置。第二漏极区域和第二源极区域在第二掺杂阱中彼此横向隔开，第二栅极结构形成在第二掺杂阱中的第二沟道区域上。

5. 发明授权

US12021078B2 Semiconductor device for a low-loss antenna switch 有权
公开(公告)号：US12021078B2
公开(公告)日：2024-06-25
申请号：US17853596
申请日：2022-06-29
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Jun-De Jin , Tzu-Jin Yeh
IPC分类号： H01L27/06 , H01L29/06 , H01L29/423
CPC分类号： H01L27/0629 , H01L29/0653 , H01L29/4238
摘要： A semiconductor device is disclosed. The semiconductor device includes a substrate, a transistor, at least one isolation and at least one non-doped region. The substrate includes a lower portion. The transistor is disposed on the lower portion. The at least one isolation is adjacent to the transistor, and disposed on the lower portion. The at least one non-doped region is disposed between and adjacent to the isolation and the lower portion.

6. 发明授权

US11128339B2 Radio frequency switch based on negative-capacitance field effect transistors 有权
公开(公告)号：US11128339B2
公开(公告)日：2021-09-21
申请号：US16668707
申请日：2019-10-30
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin
IPC分类号： H04B1/48 , H01Q1/50 , H01L23/66 , H01L29/66 , H01L29/51 , H01L29/78
摘要： Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.

7. 发明申请

US20170279418A1 POWER AMPLIFIER 审中-公开
公开(公告)号：US20170279418A1
公开(公告)日：2017-09-28
申请号：US15204734
申请日：2016-07-07
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin
IPC分类号： H03F1/56 , H03F3/24 , H03F3/193
CPC分类号： H03F1/565 , H03F3/193 , H03F3/245 , H03F2200/391 , H03F2200/451
摘要： A power amplifier (PA) cell is coupled to an input signal source, and includes a transistor coupled to the load; a first inductor coupled to a gate of the transistor; and a second inductor coupled to a source of the transistor, wherein the first inductor and the second inductor each includes a first conductive coil and a second conductive coil, respectively, having first and second inductance values, respectively, such that the PA cell includes a terminal between the gate of the transistor and the input signal source, and the terminal is impedance matched with the input signal source.

8. 发明授权

US11804869B2 Radio frequency switch 有权
公开(公告)号：US11804869B2
公开(公告)日：2023-10-31
申请号：US17461621
申请日：2021-08-30
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin
IPC分类号： H04B1/48 , H01Q1/50 , H01L23/66 , H01L29/66 , H01L29/51 , H01L29/78
CPC分类号： H04B1/48 , H01L23/66 , H01L29/513 , H01L29/516 , H01L29/6684 , H01L29/7851 , H01L29/78391 , H01Q1/50
摘要： Disclosed is a RF switch module and methods to fabricate and operate such RF switch to alternatively couple an antenna to either a transmitter transmission line or a receiver transmission line to realize lower distortion of a signal at high frequencies with improved insertion loss and without affecting isolation. In one embodiment, a Radio Frequency (RF) switch module, includes, a switch circuit for switching between transmitting first signals from a transmitter unit to an antenna and transmitting second signals from the antenna to the receiver unit, wherein the switch circuit comprises a plurality of field effect transistors (FETs), wherein each of the plurality of FETs comprises stacked gate dielectrics and at least three metal contacts to a conductive gate, wherein the stacked gate dielectrics comprises at least one first dielectric layer, wherein the first dielectric layer comprises a negative-capacitance material.

9. 发明申请

US20220230974A1 DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMANCE OF AN ANTENNA SWITCH 有权
公开(公告)号：US20220230974A1
公开(公告)日：2022-07-21
申请号：US17713907
申请日：2022-04-05
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin
IPC分类号： H01L23/66 , H01L29/06 , H01L23/528 , H01L29/417 , H01L27/088
摘要： Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

10. 发明授权

US11335654B2 Devices and methods for enhancing insertion loss-performance of an antenna switch 有权
公开(公告)号：US11335654B2
公开(公告)日：2022-05-17
申请号：US17111343
申请日：2020-12-03
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Jun-De Jin
IPC分类号： H01L23/66 , H01L29/06 , H01L23/528 , H01L29/417 , H01L27/088
摘要： Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.

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