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1. 发明授权

US09338834B2 Systems and methods for microwave-radiation annealing 有权
标题翻译：微波辐射退火的系统和方法
公开(公告)号：US09338834B2
公开(公告)日：2016-05-10
申请号：US14157588
申请日：2014-01-17
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
IPC分类号： H01L21/00 , H05B6/80 , H01L21/324 , H05B6/64 , H01L21/67
CPC分类号： H01L21/67115 , H01L21/2686 , H01L21/324 , H01L21/67248 , H01L22/20 , H05B6/6435 , H05B6/645 , H05B6/80 , H05B6/806
摘要： Systems and methods are provided for annealing a semiconductor structure using microwave radiation. A semiconductor structure is provided. One or more energy-converting materials capable of increasing the semiconductor structure's absorption of microwave radiation are provided. Microwave radiation is applied to the energy-converting materials and the semiconductor structure to anneal the semiconductor structure for fabricating semiconductor devices. First local temperatures associated with one or more first zones of the semiconductor structure are detected. The microwave radiation applied to the energy-converting materials and the semiconductor structure is adjusted based at least in part on the detected first local temperatures.
摘要翻译：提供了使用微波辐射对半导体结构退火的系统和方法。提供半导体结构。提供能够增加半导体结构的微波辐射吸收的一种或多种能量转换材料。微波辐射被施加到能量转换材料和半导体结构上以使半导体结构退火以制造半导体器件。检测与半导体结构的一个或多个第一区相关联的第一局部温度。至少部分地基于检测到的第一局部温度调节施加到能量转换材料和半导体结构的微波辐射。

2. 发明申请

US20180337077A1 Systems and Methods for Annealing Semiconductor Structures 审中-公开
公开(公告)号：US20180337077A1
公开(公告)日：2018-11-22
申请号：US16048847
申请日：2018-07-30
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
IPC分类号： H01L21/67 , H05B6/80 , H01L21/324 , H05B6/64
CPC分类号： H01L21/67115 , H01L21/324 , H05B6/6482 , H05B6/6491 , H05B6/80 , H05B6/806
摘要： Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

3. 发明授权

US10020210B2 Systems and methods for microwave-radiation annealing 有权
公开(公告)号：US10020210B2
公开(公告)日：2018-07-10
申请号：US15140609
申请日：2016-04-28
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
IPC分类号： H01L21/00 , H05B6/64 , H01L21/67 , H01L21/324 , H05B6/80 , H01L21/268 , H01L21/66
CPC分类号： H01L21/67115 , H01L21/2686 , H01L21/324 , H01L21/67248 , H01L22/20 , H05B6/6435 , H05B6/645 , H05B6/80 , H05B6/806
摘要： Systems and methods are provided for annealing a semiconductor structure using microwave radiation. A semiconductor structure is provided. One or more energy-converting materials capable of increasing the semiconductor structure's absorption of microwave radiation are provided. Microwave radiation is applied to the energy-converting materials and the semiconductor structure to anneal the semiconductor structure for fabricating semiconductor devices. First local temperatures associated with one or more first zones of the semiconductor structure are detected. The microwave radiation applied to the energy-converting materials and the semiconductor structure is adjusted based at least in part on the detected first local temperatures.

4. 发明授权

US09245982B2 Tilt implantation for forming FinFETs 有权
标题翻译：用于形成FinFET的倾斜植入
公开(公告)号：US09245982B2
公开(公告)日：2016-01-26
申请号：US14826857
申请日：2015-08-14
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Tsan-Chun Wang , Zi-Wei Fang , Tze-Liang Lee
IPC分类号： H01L29/66 , H01L21/265 , H01L21/22
CPC分类号： H01L29/66803 , H01L21/22 , H01L21/26586 , H01L21/823821 , H01L21/845
摘要： One embodiment of the instant disclosure provides a method for fabrication of fin devices for an integrated circuit, which comprises: forming a plurality of semiconductor fin structures, the fin structures including sidewalls and tops exposed from conformal masking; performing channel implantation at a tilt angle to form a doped region along the sidewalls and the tops of the fin structures, the fin structures being maintained at an elevated temperature during the channel implantation to prevent amorphization thereof during channel implantation; and forming at least one field effect transistor from the fin structures, the field effect transistor having a threshold voltage that is based on the channel implantation.
摘要翻译：本公开的一个实施例提供了一种用于制造用于集成电路的散热片装置的方法，其包括：形成多个半导体翅片结构，所述翅片结构包括从共形掩模暴露的侧壁和顶部; 以倾斜角度进行沟道注入，以沿翅片结构的侧壁和顶部形成掺杂区域，鳍状结构在沟道植入期间保持在升高的温度，以防止在沟道植入期间的非晶化; 以及从所述鳍结构形成至少一个场效应晶体管，所述场效应晶体管具有基于沟道注入的阈值电压。

5. 发明授权

US09129918B2 Systems and methods for annealing semiconductor structures 有权
标题翻译：半导体结构退火的系统和方法
公开(公告)号：US09129918B2
公开(公告)日：2015-09-08
申请号：US14066756
申请日：2013-10-30
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
IPC分类号： H01L21/324 , H01L21/67 , H05B6/64
CPC分类号： H01L21/67115 , H01L21/324 , H05B6/6482 , H05B6/6491 , H05B6/80 , H05B6/806
摘要： Systems and methods are provided for annealing a semiconductor structure. For example, a semiconductor structure is provided. An energy-converting material capable of increasing the semiconductor structure's absorption of microwave radiation is provided. A heat reflector is provided between the energy-converting material and the semiconductor structure, the heat reflector being capable of reflecting thermal radiation from the semiconductor structure. Microwave radiation is applied to the energy-converting material and the semiconductor structure to anneal the semiconductor structure for fabricating semiconductor devices.
摘要翻译：提供了退火半导体结构的系统和方法。例如，提供半导体结构。提供能够增加半导体结构的微波辐射吸收的能量转换材料。在能量转换材料和半导体结构之间提供热反射器，该热反射器能够反射来自半导体结构的热辐射。微波辐射被施加到能量转换材料和半导体结构上以退火用于制造半导体器件的半导体结构。

6. 发明授权

US10037906B2 Systems and methods for annealing semiconductor structures 有权
公开(公告)号：US10037906B2
公开(公告)日：2018-07-31
申请号：US15639055
申请日：2017-06-30
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
IPC分类号： H01L21/324 , H01L21/67 , H05B6/80
CPC分类号： H01L21/67115 , H01L21/324 , H05B6/6482 , H05B6/6491 , H05B6/80 , H05B6/806
摘要： Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

7. 发明授权

US09698026B2 Systems and methods for annealing semiconductor structures 有权
公开(公告)号：US09698026B2
公开(公告)日：2017-07-04
申请号：US15234076
申请日：2016-08-11
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
IPC分类号： H01L21/324 , H05B6/80 , H05B6/64 , H01L21/67
CPC分类号： H01L21/67115 , H01L21/324 , H05B6/6482 , H05B6/6491 , H05B6/80 , H05B6/806
摘要： Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

8. 发明授权

US09418871B2 Systems and methods for annealing semiconductor structures 有权
标题翻译：半导体结构退火的系统和方法
公开(公告)号：US09418871B2
公开(公告)日：2016-08-16
申请号：US14819536
申请日：2015-08-06
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
IPC分类号： H01L21/324 , H05B6/80 , H01L21/67 , H05B6/64
CPC分类号： H01L21/67115 , H01L21/324 , H05B6/6482 , H05B6/6491 , H05B6/80 , H05B6/806
摘要： Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.
摘要翻译：提供了退火半导体结构的系统和方法。在一个实施例中，该方法包括提供靠近半导体结构的能量转换结构，所述能量转换结构包括具有大于半导体结构的损耗角正切的材料; 在半导体结构和能量转换结构之间提供热反射结构; 并向能量转换结构和半导体结构提供微波辐射。半导体结构可以包括选自硼掺杂硅锗，磷化硅，钛，镍，氮化硅，二氧化硅，碳化硅，n型掺杂硅和铝封端碳化硅中的至少一种材料。热反射结构可以包括对微波辐射基本上是透明的并且具有相对于红外辐射的实质反射率的材料。

9. 发明授权

US09142650B2 Tilt implantation for forming FinFETs 有权
标题翻译：用于形成FinFET的倾斜植入
公开(公告)号：US09142650B2
公开(公告)日：2015-09-22
申请号：US14029848
申请日：2013-09-18
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Tsan-Chun Wang , Zi-Wei Fang , Tze-Liang Lee
IPC分类号： H01L29/66 , H01L21/265 , H01L21/22
CPC分类号： H01L29/66803 , H01L21/22 , H01L21/26586 , H01L21/823821 , H01L21/845
摘要： Methods for fabrication of fin devices for an integrated circuit are provided. Fin structures are formed in a semiconductor material, where the fin structures include sidewalls and tops. Dopant implantation is performed at a tilt angle to form a doped region along the sidewalls and the tops of the fin structures, where the semiconductor material is maintained at an elevated temperature during the dopant implantation. The elevated temperature prevents amorphization of the fin structures during the dopant implantation. A field effect transistor is formed from the fin structures. The field effect transistor has a threshold voltage that is based on the dopant implantation.
摘要翻译：提供了用于制造用于集成电路的散热片装置的方法。翅片结构形成在半导体材料中，其中翅片结构包括侧壁和顶部。以倾斜角度进行掺杂剂注入，以沿着鳍状结构的侧壁和顶部形成掺杂区域，其中半导体材料在掺杂剂注入期间保持在升高的温度。升高的温度防止在掺杂剂注入期间翅片结构的非晶化。由鳍结构形成场效应晶体管。场效应晶体管具有基于掺杂剂注入的阈值电压。

10. 发明申请

US20200051836A1 Systems and Methods for Annealing Semiconductor Structures 审中-公开
公开(公告)号：US20200051836A1
公开(公告)日：2020-02-13
申请号：US16658312
申请日：2019-10-21
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Hsiung Tsai , Zi-Wei Fang , Chao-Hsiung Wang
IPC分类号： H01L21/67 , H05B6/80 , H05B6/64 , H01L21/324
摘要： Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

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