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1. 发明申请

US20100321845A1 OVERHEAT PROTECTION CIRCUIT AND POWER SUPPLY INTEGRATED CIRCUIT 有权
标题翻译：超声波保护电路和电源集成电路
公开(公告)号：US20100321845A1
公开(公告)日：2010-12-23
申请号：US12790070
申请日：2010-05-28
申请人： Takashi Imura , Takao Nakashimo , Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
发明人： Takashi Imura , Takao Nakashimo , Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
IPC分类号： H02H5/04
CPC分类号： G05F1/569
摘要： Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.
摘要翻译：提供了一种具有高检测精度的过热保护电路的电源集成电路。过热保护电路包括：电流产生电路，包括：第一金属氧化物半导体（MOS）晶体管，其包括彼此连接的栅极端子和漏极端子，所述第一MOS晶体管在弱反转区域中工作; 第二MOS晶体管，包括连接到第一MOS晶体管的栅极端子的栅极端子，第二MOS晶体管具有与第一MOS晶体管相同的导电类型并且在弱反转区域中操作; 以及连接到所述第二MOS晶体管的源极端子的第一电阻元件; 以及比较器，用于比较具有正温度特性的参考电压和具有负温度特性的温度电压，其基于由电流产生电路产生的电流获得。

2. 发明授权

US08451571B2 Overheat protection circuit and power supply integrated circuit 有权
标题翻译：过热保护电路和电源集成电路
公开(公告)号：US08451571B2
公开(公告)日：2013-05-28
申请号：US12790070
申请日：2010-05-28
申请人： Takashi Imura , Takao Nakashimo , Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
发明人： Takashi Imura , Takao Nakashimo , Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
IPC分类号： H02H3/00
CPC分类号： G05F1/569
摘要： Provided is a power supply integrated circuit including an overheat protection circuit with high detection accuracy. The overheat protection circuit includes: a current generation circuit including: a first metal oxide semiconductor (MOS) transistor including a gate terminal and a drain terminal that are connected to each other, the first MOS transistor operating in a weak inversion region; a second MOS transistor including a gate terminal connected to the gate terminal of the first MOS transistor, the second MOS transistor having the same conductivity type as the first MOS transistor and operating in a weak inversion region; and a first resistive element connected to a source terminal of the second MOS transistor; and a comparator for comparing a reference voltage having positive temperature characteristics and a temperature voltage having negative temperature characteristics, which are obtained based on a current generated by the current generation circuit.
摘要翻译：提供了一种具有高检测精度的过热保护电路的电源集成电路。过热保护电路包括：电流产生电路，包括：第一金属氧化物半导体（MOS）晶体管，其包括彼此连接的栅极端子和漏极端子，所述第一MOS晶体管在弱反转区域中工作; 第二MOS晶体管，包括连接到第一MOS晶体管的栅极端子的栅极端子，第二MOS晶体管具有与第一MOS晶体管相同的导电类型并且在弱反转区域中操作; 以及连接到所述第二MOS晶体管的源极端子的第一电阻元件; 以及比较器，用于比较具有正温度特性的参考电压和具有负温度特性的温度电压，其基于由电流产生电路产生的电流获得。

3. 发明申请

US20120182062A1 TEMPERATURE SENSOR DEVICE 有权
标题翻译：温度传感器装置
公开(公告)号：US20120182062A1
公开(公告)日：2012-07-19
申请号：US13345064
申请日：2012-01-06
申请人： Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
发明人： Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
IPC分类号： H03K3/011
CPC分类号： G01K7/01
摘要： Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit.
摘要翻译：提供了可在较低电压下操作的温度传感器装置。温度传感器装置基于用于产生PN结的正向电压的正向电压发生器的输出电压来检测温度。正向电压发生器包括电平转换电压产生电路，并且基于PN结的正向电压和电平转换电压产生电路的电压来给出温度传感器装置的输出电压。

4. 发明申请

US20120187911A1 OUTPUT CIRCUIT, TEMPERATURE SWITCH IC, AND BATTERY PACK 有权
标题翻译：输出电路，温度开关IC和电池组
公开(公告)号：US20120187911A1
公开(公告)日：2012-07-26
申请号：US13355740
申请日：2012-01-23
申请人： Masahiro Mitani , Naohiro Hiraoka , Masakazu Sugiura , Atsushi Igarashi
发明人： Masahiro Mitani , Naohiro Hiraoka , Masakazu Sugiura , Atsushi Igarashi
IPC分类号： H02J7/00 , H03K3/00
CPC分类号： H03K17/20 , H02J7/0031 , H02J7/047 , H03K19/0013 , H03K19/00361 , H03K19/018521
摘要： An output circuit has a smaller area and restrains outputs from becoming unstable even if a power supply voltage is lower than an operating voltage. A supply terminal of an inverter circuit is provided with switch circuit, and the switch circuit stops the operation of the inverter circuit when the power supply voltage is lower than the operating voltage of the circuit. Further, the output terminal of the inverter circuit is provided with a current source to fix the output to the power supply voltage when the operation of the inverter circuit is stopped.
摘要翻译：输出电路具有较小的面积，并且即使电源电压低于工作电压，也抑制输出变得不稳定。逆变器电路的供电端子设置有开关电路，并且当电源电压低于电路的工作电压时，开关电路停止逆变器电路的操作。此外，在逆变器电路的动作停止时，逆变器电路的输出端子设置有电流源，以将输出固定在电源电压上。

5. 发明授权

US09118326B2 Output circuit, temperature switch IC, and battery pack 有权
标题翻译：输出电路，温度开关IC和电池组
公开(公告)号：US09118326B2
公开(公告)日：2015-08-25
申请号：US13355740
申请日：2012-01-23
申请人： Masahiro Mitani , Naohiro Hiraoka , Masakazu Sugiura , Atsushi Igarashi
发明人： Masahiro Mitani , Naohiro Hiraoka , Masakazu Sugiura , Atsushi Igarashi
IPC分类号： H02J7/00 , H03K17/20 , H02J7/04 , H03K19/00 , H03K19/0185 , H03K19/003
CPC分类号： H03K17/20 , H02J7/0031 , H02J7/047 , H03K19/0013 , H03K19/00361 , H03K19/018521
摘要： An output circuit has a smaller area and restrains outputs from becoming unstable even if a power supply voltage is lower than an operating voltage. A supply terminal of an inverter circuit is provided with switch circuit, and the switch circuit stops the operation of the inverter circuit when the power supply voltage is lower than the operating voltage of the circuit. Further, the output terminal of the inverter circuit is provided with a current source to fix the output to the power supply voltage when the operation of the inverter circuit is stopped.
摘要翻译：输出电路具有较小的面积，并且即使电源电压低于工作电压，也抑制输出变得不稳定。逆变器电路的供电端子设置有开关电路，并且当电源电压低于电路的工作电压时，开关电路停止逆变器电路的操作。此外，在逆变器电路的动作停止时，逆变器电路的输出端子设置有电流源，以将输出固定在电源电压上。

6. 发明授权

US08547163B2 Temperature sensor device 有权
标题翻译：温度传感器装置
公开(公告)号：US08547163B2
公开(公告)日：2013-10-01
申请号：US13345064
申请日：2012-01-06
申请人： Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
发明人： Masakazu Sugiura , Atsushi Igarashi , Masahiro Mitani
IPC分类号： H01L35/00
CPC分类号： G01K7/01
摘要： Provided is a temperature sensor device operable at a lower voltage. The temperature sensor device detects temperature based on an output voltage of a forward voltage generator for generating a forward voltage of a PN junction. The forward voltage generator includes a level shift voltage generation circuit, and an output voltage of the temperature sensor device is given based on the forward voltage of the PN junction and a voltage of the level shift voltage generation circuit.
摘要翻译：提供了可在较低电压下操作的温度传感器装置。温度传感器装置基于用于产生PN结的正向电压的正向电压发生器的输出电压来检测温度。正向电压发生器包括电平转换电压产生电路，并且基于PN结的正向电压和电平转换电压产生电路的电压来给出温度传感器装置的输出电压。

7. 发明授权

US08264277B2 Differential amplifier circuit 有权
标题翻译：差分放大电路
公开(公告)号：US08264277B2
公开(公告)日：2012-09-11
申请号：US13092585
申请日：2011-04-22
申请人： Atsushi Igarashi , Masahiro Mitani
发明人： Atsushi Igarashi , Masahiro Mitani
IPC分类号： H03F3/45
CPC分类号： H03F3/45192
摘要： Provided is a differential amplifier circuit in which an offset voltage is independent from input voltages. A first correction current generation circuit and a second correction current generation circuit are provided and configured to cause the same current as a current flowing through a folded cascode amplifying stage to flow into an output stage. Accordingly, transistors included in the folded cascode amplifying stage and transistors included in the output stage have the same bias condition.
摘要翻译：提供了一种差分放大器电路，其中偏移电压与输入电压无关。第一校正电流产生电路和第二校正电流产生电路被提供并被配置为使与流过折叠共源共栅放大级的电流相同的电流流入输出级。因此，包含在折叠共源共栅放大级中的晶体管和包括在输出级中的晶体管具有相同的偏置条件。

8. 发明申请

US20110273232A1 DIFFERENTIAL AMPLIFIER CIRCUIT 有权
标题翻译：差分放大器电路
公开(公告)号：US20110273232A1
公开(公告)日：2011-11-10
申请号：US13092585
申请日：2011-04-22
申请人： Atsushi Igarashi , Masahiro Mitani
发明人： Atsushi Igarashi , Masahiro Mitani
IPC分类号： H03F3/45
CPC分类号： H03F3/45192
摘要： Provided is a differential amplifier circuit in which an offset voltage is independent from input voltages. A first correction current generation circuit and a second correction current generation circuit are provided and configured to cause the same current as a current flowing through a folded cascode amplifying stage to flow into an output stage. Accordingly, transistors included in the folded cascode amplifying stage and transistors included in the output stage have the same bias condition.
摘要翻译：提供了一种差分放大器电路，其中偏移电压与输入电压无关。第一校正电流产生电路和第二校正电流产生电路被提供并被配置为使与流过折叠共源共栅放大级的电流相同的电流流入输出级。因此，包含在折叠共源共栅放大级中的晶体管和包括在输出级中的晶体管具有相同的偏置条件。

9. 发明授权

US08946820B2 Method for manufacturing semiconductor substrate, substrate for forming semiconductor substrate, stacked substrate, semiconductor substrate, and electronic device 有权
标题翻译：用于制造半导体衬底的方法，用于形成半导体衬底的衬底，层叠衬底，半导体衬底和电子器件
公开(公告)号：US08946820B2
公开(公告)日：2015-02-03
申请号：US14117158
申请日：2012-06-26
申请人： Masahiro Mitani
发明人： Masahiro Mitani
IPC分类号： H01L27/12 , H01L21/46 , H01L21/762 , H01L29/16 , H01L29/786
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/16 , H01L29/78654
摘要： Film thickness variations are prevented in a plurality of single crystal semiconductor films separated at a fragile layer reliably and transferred to a base substrate. A method for manufacturing a SOI substrate (33) in which a plurality of SOI layers (15) are disposed on a base substrate (30) includes the steps of bonding a plurality of SOI wafers (10), in which an oxide film (14), a SOI layer (15), a BOX layer (12), and a Si support substrate (13) having a fragile layer (17) formed by ion irradiation in the inside and being made from a single crystal semiconductor material are stacked sequentially, to a base substrate (30) in such a way that the oxide film (14) is located on the side close to the base substrate (30), applying heat to the plurality of SOI wafers (10) to separate part of the Si support substrate (13) at the fragile layer (17) and transfer the oxide film (14), the SOI layer (15), the BOX layer (12), and a single crystal Si layer (18) which is part of the Si support substrate (13) to the base substrate (30), and subjecting the base substrate (30) to an etch back treatment to expose the BOX layer (12) by etching the transferred single crystal Si layer (18).
摘要翻译：在易碎层分离的多个单晶半导体膜中，可以防止膜厚变化，并将其转印到基底。在基底（30）上设置多个SOI层（15）的SOI衬底（33）的制造方法包括将多个SOI晶片（10）接合的工序，其中，氧化膜（14）），顺序地层叠具有通过离子照射在内部并由单晶半导体材料制成的脆性层（17）的SOI层（15），BOX层（12）和Si支撑基板（13）以使得氧化膜（14）位于靠近基底（30）的一侧的方式施加到基底（30），向多个SOI晶片（10）施加热量以分离部分Si 在所述脆弱层（17）处的支撑基板（13），并且将所述氧化物膜（14），所述SOI层（15），所述BOX层（12）和作为所述Si的一部分的单晶Si层（18）支撑基板（13）到基底基板（30），并且对基底基板（30）进行回蚀处理，以通过蚀刻转移的单个Cr来暴露BOX层（12） ystal Si层（18）。

10. 发明申请

US20090218943A1 DISPLAY DEVICE AND ELECTRONIC EQUIPMENT 审中-公开
标题翻译：显示设备和电子设备
公开(公告)号：US20090218943A1
公开(公告)日：2009-09-03
申请号：US12372844
申请日：2009-02-18
申请人： Teiichiro Nishimura , Kaoru Abe , Reo Asaki , Masahiro Mitani
发明人： Teiichiro Nishimura , Kaoru Abe , Reo Asaki , Masahiro Mitani
IPC分类号： G02B5/00 , H01J1/62
CPC分类号： H01L51/5275 , H01L27/3211 , H01L27/3244 , H01L51/5246 , H01L51/5253 , H01L51/5265 , H01L2251/5315
摘要： A display device includes: a display area having a resonator structure for resonating produced light; a protective film formed to cover the display area; a resin layer formed on the protective film; and a sealing layer attached by the resin layer, wherein the protective film includes a single silicon nitride layer, and has a refractive index between 1.65 and 1.75 at a wavelength of nm.
摘要翻译：显示装置包括：具有用于谐振产生的光的谐振器结构的显示区域; 形成为覆盖显示区域的保护膜; 形成在保护膜上的树脂层; 以及由树脂层附着的密封层，其中保护膜包括单个氮化硅层，并且在波长为nm的折射率为1.65和1.75之间。

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