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    • 2. 发明授权
    • Non-volatile semiconductor memory
    • 非易失性半导体存储器
    • US06788600B2
    • 2004-09-07
    • US10139716
    • 2002-05-06
    • Hiroshi SugawaraToshikatsu JinboAtsunori MikiTakayuki KurokawaKenichi Ushikoshi
    • Hiroshi SugawaraToshikatsu JinboAtsunori MikiTakayuki KurokawaKenichi Ushikoshi
    • G11C702
    • G11C7/18G11C5/025
    • A non-volatile flash memory (100) that may have an improved layout freedom is disclosed. Non-volatile flash memory (100) may include banks (B0 and B1). Each bank (B0 and B1) may include memory cell arrays (MCA00 to MCA03) including a plurality of memory cells (MC) connected to sub bit lines (LB). A plurality of sub bit lines (LB) may be selectively connected to a main bit line (MB) by a group switch (Y1S0 and Y1S1). A group of main bit lines (MB) may be disposed over a memory cell array. A group of main bit lines (MB) may be selectively connected to a sense amplifier block (SAB) by a group switch group (Y2S0 and Y2S1) and a bank switch group (Y3S0 and Y3S1). In this way, a sense amplifier block (SAB) may be shared by a plurality of groups of main bit lines (MB). In this way, layout freedom may be improved.
    • 公开了可以具有改进的布局自由度的非易失性闪存(100)。 非易失性闪存(100)可以包括存储体(B0和B1)。 每个存储体(B0和B1)可以包括包括连接到子位线(LB)的多个存储单元(MC)的存储单元阵列(MCA00至MCA03)。 多个子位线(LB)可以通过组开关(Y1S0和Y1S1)选择性地连接到主位线(MB)。 一组主位线(MB)可以设置在存储单元阵列上。 一组主位线(MB)可以通过组开关组(Y2S0和Y2S1)和组开关组(Y3S0和Y3S1)选择性地连接到读出放大器模块(SAB)。 以这种方式,读出放大器块(SAB)可以被多个主位线组(MB)共享。 以这种方式,可以提高布局自由度。
    • 9. 发明授权
    • Semiconductor level shifter circuit
    • 半导体电平转换电路
    • US06646918B2
    • 2003-11-11
    • US10054085
    • 2002-01-22
    • Takayuki KurokawaHiroshi Sugawara
    • Takayuki KurokawaHiroshi Sugawara
    • G11C1134
    • G11C16/12
    • A level shifter (1) that may provide a relatively high-speed operation in a level shifting mode and a non-level shifting mode has been disclosed. Level shifter (1) may include a transistor (P101) providing a controllable current path between a voltage terminal (3) and an output signal (TOUT) based on the logic level of an input signal (IN). Series connected transistors (P104 and P105) may provide a controllable current path between voltage terminal (3) and output signal (TOUT) based on the logic level of an input signal (IN). Transistor (P105) may be enabled in a Vcc mode and may be disabled in a Vpp mode. In this way, an equivalent transistor width (WT) may be adjusted in accordance with a mode of operation and a transition time of output signal (TOUT) may be improved.
    • 已经公开了可以在电平移位模式和非电平移位模式中提供相对高速操作的电平移位器(1)。 电平移位器(1)可以包括基于输入信号(IN)的逻辑电平提供电压端(3)和输出信号(TOUT)之间的可控电流路径的晶体管(P101)。 串联连接的晶体管(P104和P105)可以基于输入信号(IN)的逻辑电平提供电压端(3)和输出信号(TOUT)之间的可控电流路径。 晶体管(P105)可以在Vcc模式下使能,并且可以在Vpp模式下禁用。 以这种方式,可以根据工作模式来调整等效晶体管宽度(WT),并且可以提高输出信号(TOUT)的转换时间。