专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08421116B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08421116B2
公开(公告)日：2013-04-16
申请号：US12628680
申请日：2009-12-01
申请人： Nobutoshi Arai , Masatomi Harada , Takayuki Ogura , Hiroshi Kotaki
发明人： Nobutoshi Arai , Masatomi Harada , Takayuki Ogura , Hiroshi Kotaki
IPC分类号： H01L33/00
CPC分类号： H01L33/0041 , C09K11/661 , H05B33/14
摘要： The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.
摘要翻译：本发明的发光器件包括第一电极，第二电极和第二电极，该第二电极是透光的，以及夹在第一电极和第二电极之间并包含发光体的载体，其中第一电极具有多个突起或形成的pn结其中p型半导体和n型半导体各自在与载体接触的表面上。

2. 发明授权

US07304340B2 Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card 失效
标题翻译：半导体存储元件，半导体器件制造方法，便携式电子设备和IC卡
公开(公告)号：US07304340B2
公开(公告)日：2007-12-04
申请号：US10848323
申请日：2004-05-19
申请人： Takayuki Ogura , Hiroshi Iwata , Akihide Shibata
发明人： Takayuki Ogura , Hiroshi Iwata , Akihide Shibata
IPC分类号： H01L29/76
CPC分类号： B82Y10/00 , G11C16/0458 , G11C2216/06 , H01L21/28273 , H01L29/42332 , H01L29/7887
摘要： A semiconductor storage element has a memory function body on opposite sides of a gate electrode formed on a semiconductor substrate. Each end of source/drain regions is located in the semiconductor substrate just under the memory function body and offset with respect to an edge of the gate electrode in a gate length direction to improve efficiency of electric charge injection into the memory function body. A storage state in the memory function body is found by detecting a amount of current between the source/drain regions, which current changes depending on the amount of the electric charge retained in the charge retention portion.
摘要翻译：半导体存储元件在半导体衬底上形成的栅电极的相对侧上具有记忆功能体。源极/漏极区域的每个端部位于存储器功能体正下方的半导体衬底中，并且相对于栅电极的栅极长度方向的边缘偏移，以提高电荷注入存储器功能体的效率。通过检测源极/漏极区域之间的电流量来确定存储器功能体中的存储状态，该电流/电流区域中的电流根据电荷保留部分中保留的电荷量而变化。

3. 发明申请

US20060208312A1 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card 有权
标题翻译：半导体存储器件及其制造方法，半导体器件，便携式电子设备和IC卡
公开(公告)号：US20060208312A1
公开(公告)日：2006-09-21
申请号：US11414226
申请日：2006-05-01
申请人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
发明人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0491 , H01L21/28282 , H01L21/28291 , H01L21/76831 , H01L21/76897 , H01L27/115 , H01L29/42332 , H01L29/6656 , H01L29/66833 , H01L29/7887 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.
摘要翻译：半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。

4. 发明授权

US07663514B2 Encoding processing apparatus and decoding processing apparatus 失效
标题翻译：编码处理装置和解码处理装置
公开(公告)号：US07663514B2
公开(公告)日：2010-02-16
申请号：US12178310
申请日：2008-07-23
申请人： Takayuki Ogura
发明人： Takayuki Ogura
IPC分类号： H03M7/40
CPC分类号： H04N19/42 , H04N19/91
摘要： An encoding processing apparatus includes a first storing section for storing first encoded information and second encoded information, a second storing section for storing a table indicating association relation between the first encoded information and the second encoded information, an arithmetic section for calculating the second encoded information by reading the first encoded information stored in the first storing section and searching the table stored in the second storing section, a third storing section for storing by associating the first encoded information previously read from the first storing section and the second encoded information, a first control section for reading the second encoded information associated with the first encoded information from the third storing section, and a second control section for storing by associating the first encoded information with the second encoded information in the third storing section. The arithmetic section performs processing of searching the table stored in the second storing section and calculating the second encoded information.
摘要翻译：编码处理装置包括：第一存储部分，用于存储第一编码信息和第二编码信息;第二存储部分，用于存储指示第一编码信息和第二编码信息之间的关联关系的表;运算部分，用于计算第二编码信息通过读取存储在第一存储部分中的第一编码信息并搜索存储在第二存储部分中的表，第三存储部分通过将从第一存储部分预先读取的第一编码信息与第二编码信息相关联来存储第一编码信息，第一编码信息控制部分，用于从第三存储部分读取与第一编码信息相关联的第二编码信息;以及第二控制部分，用于通过在第三存储部分中将第一编码信息与第二编码信息相关联来存储。算术部分执行搜索存储在第二存储部分中的表并计算第二编码信息的处理。

5. 发明申请

US20090304075A1 Moving Image Processing Method, Program of Moving Image Processing Method, Recording Medium Having Program of Moving Image Processing Method Recorded Thereon, and Moving Image Processing Apparatus 审中-公开
标题翻译：运动图像处理方法，移动图像处理方法的程序，记录有移动图像处理方法的程序的记录介质和运动图像处理装置
公开(公告)号：US20090304075A1
公开(公告)日：2009-12-10
申请号：US12226929
申请日：2007-03-14
申请人： Takayuki Ogura , Daijou Shigemoto
发明人： Takayuki Ogura , Daijou Shigemoto
IPC分类号： H04N7/32
CPC分类号： H04N19/423 , H04N19/61 , H04N19/70 , H04N19/91
摘要： The present invention is applied, for example, to a moving image encoding apparatus and decoding apparatus based on ITU-T H.264. Syntax elements with a high frequency of appearance are processed using probability state variables held in a second memory 13 whose access latency is small, and other syntax elements are processed using probability state variables held in a first memory 12 whose access latency is large.
摘要翻译：本发明例如应用于基于ITU-T H.264的运动图像编码装置和解码装置。具有高频率外观的语法元素使用保持在其访问等待时间较短的第二存储器13中的概率状态变量进行处理，并且使用保持在访问等待时间较长的第一存储器12中的概率状态变量来处理其他语法元素。

6. 发明授权

US07312499B2 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card 有权
标题翻译：半导体存储器件及其制造方法，半导体器件，便携式电子设备和IC卡
公开(公告)号：US07312499B2
公开(公告)日：2007-12-25
申请号：US11414226
申请日：2006-05-01
申请人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
发明人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0491 , H01L21/28282 , H01L21/28291 , H01L21/76831 , H01L21/76897 , H01L27/115 , H01L29/42332 , H01L29/6656 , H01L29/66833 , H01L29/7887 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.
摘要翻译：半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。

7. 发明授权

US07074676B2 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment 失效
标题翻译：存储膜，制造存储膜的方法，存储元件，半导体存储器件，半导体集成电路和便携式电子设备
公开(公告)号：US07074676B2
公开(公告)日：2006-07-11
申请号：US10468738
申请日：2002-02-13
申请人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
发明人： Hiroshi Iwata , Akihide Shibata , Nobutoshi Arai , Takayuki Ogura , Kouichirou Adachi , Seizo Kakimoto , Yukio Yasuda , Shigeaki Zaima , Akira Sakai
IPC分类号： H01L21/8247 , H01L29/788
CPC分类号： B82Y10/00 , H01L21/28273 , H01L27/115 , H01L29/42332 , Y10S438/962
摘要： A memory film operable at a low voltage and a method of manufacturing the memory film; the method, comprising the steps of forming a first insulation film (112) on a semiconductor substrate (111) forming a first electrode, forming a first conductor film (113) on the first insulation film (112), forming a second insulation film (112B) on the surface of the first conductor film (113), forming a third insulation film containing conductor particulates (114, 115) on the second insulation film (112B), and forming a second conductor film forming a second electrode on the third insulation film.
摘要翻译：以低电压工作的记忆膜和制造该记忆膜的方法; 该方法包括以下步骤：在形成第一电极的半导体衬底（111）上形成第一绝缘膜（112），在第一绝缘膜（112）上形成第一导体膜（113），形成第二绝缘膜（ 112B），在第二绝缘膜（112B）上形成包含导体微粒（114,115）的第三绝缘膜，并在第二绝缘膜（112B）上形成第二导电膜，形成第二电极第三绝缘膜。

8. 发明授权

US09617298B2 Collagen powder and/or collagen-derived powder, and production method for the same 有权
公开(公告)号：US09617298B2
公开(公告)日：2017-04-11
申请号：US13813126
申请日：2011-07-29
申请人： Keisuke Tanaka , Takayuki Ogura , Shunji Hattori , Koichi Matsuda , Yoshikatsu Kobayashi , Shoji Oi
发明人： Keisuke Tanaka , Takayuki Ogura , Shunji Hattori , Koichi Matsuda , Yoshikatsu Kobayashi , Shoji Oi
IPC分类号： C07K1/30 , A61K9/14 , A61K8/02 , A61K8/65 , C08J3/14 , C08L89/06 , A61Q19/00 , C08H1/06
CPC分类号： C07K1/30 , A61K8/022 , A61K8/65 , A61K2800/10 , A61Q19/00 , C08H1/06 , C08J3/14 , C08J2389/06 , C08L89/06
摘要： Disclosed is a collagen powder and/or a collagen derivative powder, which are obtained by dispersing in a hydrophilic organic solvent a crude collagen precipitate which comprises 12 to 50% by mass of a collagen precipitate and/or a collagen derivative precipitate having an average particle size of 1 to 1,000 μm, recovering solids and then drying the solids. By dispersing the crude collagen precipitate in the hydrophilic organic solvent, the resulting precipitates can be dehydrated, so that drying of the thus obtained solids can be done by air-drying. In addition, the resulting collagen powder and/or collagen derivative powder exhibit excellent solubility due to an increased specific surface area and also have excellent ease of handling with the average particle size being 8 to 1,000 μm.

9. 发明授权

US07262992B2 Hearing aid 有权
标题翻译：助听器
公开(公告)号：US07262992B2
公开(公告)日：2007-08-28
申请号：US10844525
申请日：2004-05-13
申请人： Akihide Shibata , Takayuki Ogura , Hiroshi Iwata
发明人： Akihide Shibata , Takayuki Ogura , Hiroshi Iwata
IPC分类号： G11C11/34 , G11C7/00
CPC分类号： H04R25/505 , H04R2225/41
摘要： A hearing aid comprising a data memory includes a plurality of semiconductor memory cells. The semiconductor memory cell has a gate insulating film formed on a semiconductor substrate, on a well region provided in the semiconductor substrate, or on a semiconductor film deposited on an insulator; a single gate electrode formed on the gate insulating film; two memory functional units formed on both sidewalls of the single gate electrode; a channel formation region formed under the single gate electrode; and first diffusion regions disposed on both sides of the channel formation region. The semiconductor memory cell is constituted so as to change an amount of currents flowing from one of the first diffusion regions to the other first diffusion region according to an amount of charges retained in the memory functional unit or a polarization vector when a voltage is applied to the gate electrode.
摘要翻译：包括数据存储器的助听器包括多个半导体存储单元。半导体存储单元具有形成在半导体衬底上的阱绝缘膜，设置在半导体衬底中的阱区或沉积在绝缘体上的半导体膜; 形成在栅极绝缘膜上的单个栅电极; 形成在单个栅电极的两个侧壁上的两个存储功能单元; 形成在单个栅电极下面的沟道形成区域; 以及设置在通道形成区域两侧的第一扩散区域。半导体存储单元被构成为根据保存在存储功能单元中的电荷量或者施加电压时的极化矢量来改变从第一扩散区域之一流向另一个第一扩散区域的电流量栅电极。

10. 发明授权

US07129539B2 Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card 有权
公开(公告)号：US07129539B2
公开(公告)日：2006-10-31
申请号：US10844474
申请日：2004-05-13
申请人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
发明人： Hiroshi Iwata , Takayuki Ogura , Akihide Shibata , Kouichirou Adachi
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , G11C16/0491 , H01L21/28282 , H01L21/28291 , H01L21/76831 , H01L21/76897 , H01L27/115 , H01L29/42332 , H01L29/6656 , H01L29/66833 , H01L29/7887 , H01L29/7923 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式