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1. 发明申请

US20190164865A1 Semiconductor Package 审中-公开
公开(公告)号：US20190164865A1
公开(公告)日：2019-05-30
申请号：US16092454
申请日：2017-04-24
申请人： Technische Hochschule Ingolstadt
发明人： Gordon Elger , Johannes Pforr
IPC分类号： H01L23/367 , H01L23/31 , H01L23/373 , H01L23/00 , H01L25/07
CPC分类号： H01L23/3675 , H01L21/50 , H01L23/10 , H01L23/147 , H01L23/315 , H01L23/3735 , H01L23/5385 , H01L23/5389 , H01L24/32 , H01L25/071 , H01L2224/32157 , H01L2224/8384 , H01L2924/1203 , H01L2924/1301 , H01L2924/13033 , H01L2924/13055 , H01L2924/13091 , H01L2924/14252 , H01L2924/19051 , H01L2924/19105 , H02P27/08
摘要： A semiconductor package (1, 1′, 1″), the package (1, 1′, 1″) comprising a first substrate (2) comprising at a front cavity side (5′) a plurality of cavities (6, 6′), each of the cavities (6, 6′) having a bottom wall (7) and side walls (8), and having a conductive path (10) forming an electric contact surface (9) located at the inner side of the bottom wall (7) of the cavity (6, 6′), a plurality of semiconductor elements (16, 7), each of the semiconductor elements (16, 17) comprising a first electric contact surface (9) on a first side (26) and a second electric contact surface (9) on a second side (28) opposite to the first side (26), wherein at least one of the semiconductor elements (16, 17) is placed within a corresponding cavity (6, 6′) at the front cavity side (5′) of the first substrate (2), wherein the first electric contact (27) of the semiconductor element (16, 17) and the electric contact surface (9) at the inner side of the bottom wall (7) of the corresponding cavity (6, 6′) are electrically conductive bonded in a material-locking manner, and a second substrate (3), the second substrate (3) being attached with a connection side (12, 13) to the front cavity side (5′) of the first substrate (2) thereby encapsulating the semiconductor elements (16, 17) located within the corresponding cavities (6, 6′) at the front cavity side (5′) of the first substrate (2).

2. 发明授权

US10692796B2 Semiconductor package having stacked substrates with cavities 有权
公开(公告)号：US10692796B2
公开(公告)日：2020-06-23
申请号：US16092454
申请日：2017-04-24
申请人： Technische Hochschule Ingolstadt
发明人： Gordon Elger , Johannes Pforr
IPC分类号： H01L23/367 , H01L25/07 , H01L23/31 , H01L23/373 , H01L23/00 , H01L23/538 , H01L23/10 , H01L23/14 , H01L21/50 , H02P27/08
摘要： A semiconductor package (1, 1′, 1″), the package (1, 1′, 1″) comprising a first substrate (2) comprising at a front cavity side (5′) a plurality of cavities (6, 6′), each of the cavities (6, 6′) having a bottom wall (7) and side walls (8), and having a conductive path (10) forming an electric contact surface (9) located at the inner side of the bottom wall (7) of the cavity (6, 6′), a plurality of semiconductor elements (16, 7), each of the semiconductor elements (16, 17) comprising a first electric contact surface (9) on a first side (26) and a second electric contact surface (9) on a second side (28) opposite to the first side (26), wherein at least one of the semiconductor elements (16, 17) is placed within a corresponding cavity (6, 6′) at the front cavity side (5′) of the first substrate (2), wherein the first electric contact (27) of the semiconductor element (16, 17) and the electric contact surface (9) at the inner side of the bottom wall (7) of the corresponding cavity (6, 6′) are electrically conductive bonded in a material-locking manner, and a second substrate (3), the second substrate (3) being attached with a connection side (12, 13) to the front cavity side (5′) of the first substrate (2) thereby encapsulating the semiconductor elements (16, 17) located within the corresponding cavities (6, 6′) at the front cavity side (5′) of the first substrate (2).

3. 发明授权

US11313819B2 Thermal analysis of semiconductor devices 有权
公开(公告)号：US11313819B2
公开(公告)日：2022-04-26
申请号：US16510052
申请日：2019-07-12
申请人： Technische Hochschule Ingolstadt
发明人： Gordon Elger , Maximilian Schmid , Alexander Hanss
IPC分类号： G01N25/00 , G01K7/00 , G01N25/18 , G01K3/04 , G01K3/10 , G01R31/26
摘要： A method for determining a thermal impedance of a sample device is described. According to the method, a sample device is heated to an initial temperature. A pulsed power including a sequence of pulses is applied to the sample device. Temperature of the sample device is measured in a time-dependent manner. A thermal impedance of the sample device is determined based on the temperature of the sample device and the pulsed power.

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