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1. 发明申请

US20130069143A1 TRENCH TYPE POWER TRANSISTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译： TRENCH型功率晶体管器件及其制造方法
公开(公告)号：US20130069143A1
公开(公告)日：2013-03-21
申请号：US13237940
申请日：2011-09-21
申请人： Teng-Hao Yeh , Shian-Hau Liao , Chia-Hui Chen , SUNG-SHAN TAI
发明人： Teng-Hao Yeh , Shian-Hau Liao , Chia-Hui Chen , SUNG-SHAN TAI
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer disposed in the trench. The gate metal layer and the source metal layer are disposed on the semiconductor substrate. The second gate conductive layer is disposed between the first gate conductive layer and the source metal layer. The second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.
摘要翻译：本发明提供了包括半导体衬底，至少一个晶体管单元，栅极金属层，源极金属层和第二栅极导电层的沟槽型功率晶体管器件。半导体衬底具有至少一个沟槽。晶体管单元包括设置在沟槽中的第一栅极导电层。栅极金属层和源极金属层设置在半导体衬底上。第二栅极导电层设置在第一栅极导电层和源极金属层之间。第二栅极导电层将第一栅极导电层电连接到栅极金属层，并且第二栅极导电层与源极金属层和半导体衬底电绝缘。

2. 发明授权

US08536646B2 Trench type power transistor device 有权
标题翻译：沟槽型功率晶体管器件
公开(公告)号：US08536646B2
公开(公告)日：2013-09-17
申请号：US13237940
申请日：2011-09-21
申请人： Teng-Hao Yeh , Shian-Hau Liao , Chia-Hui Chen , Sung-Shan Tai
发明人： Teng-Hao Yeh , Shian-Hau Liao , Chia-Hui Chen , Sung-Shan Tai
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer disposed in the trench. The gate metal layer and the source metal layer are disposed on the semiconductor substrate. The second gate conductive layer is disposed between the first gate conductive layer and the source metal layer. The second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.
摘要翻译：本发明提供了包括半导体衬底，至少一个晶体管单元，栅极金属层，源极金属层和第二栅极导电层的沟槽型功率晶体管器件。半导体衬底具有至少一个沟槽。晶体管单元包括设置在沟槽中的第一栅极导电层。栅极金属层和源极金属层设置在半导体衬底上。第二栅极导电层设置在第一栅极导电层和源极金属层之间。第二栅极导电层将第一栅极导电层电连接到栅极金属层，并且第二栅极导电层与源极金属层和半导体衬底电绝缘。

3. 发明授权

US08643094B2 Method of forming a self-aligned contact opening in MOSFET 有权
标题翻译：在MOSFET中形成自对准接触开口的方法
公开(公告)号：US08643094B2
公开(公告)日：2014-02-04
申请号：US13218476
申请日：2011-08-26
申请人： Sung-Shan Tai , Teng-hao Yeh , Chia-Hui Chen
发明人： Sung-Shan Tai , Teng-hao Yeh , Chia-Hui Chen
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/41741 , H01L29/41766 , H01L29/41775 , H01L29/66719 , H01L29/66727 , H01L29/66734
摘要： A method of forming a contact opening in a semiconductor substrate is presented. A plurality of trench gates each having a projecting portion are formed in a semiconductor substrate, and a stop layer is deposited over the semiconductor substrate extending over the projecting portions, wherein each portion of the stop layer along each of the sidewalls of the projecting portions is covered by a spacer. By removing the portions of the stop layer not covered by the spacers by utilizing a relatively higher etching selectivity of the stop layer to the spacers, the openings between adjacent projecting portions with an L-type shape on each sidewall can be formed, and a lithography process can be performed to form self-aligned contact openings thereafter.
摘要翻译：提出了在半导体衬底中形成接触开口的方法。在半导体衬底中形成各自具有突出部分的多个沟槽栅极，并且在突出部分上延伸的半导体衬底上沉积停止层，其中沿着突出部分的每个侧壁的阻挡层的每个部分是被间隔物覆盖。通过利用阻挡层对间隔物的相对较高的蚀刻选择性去除未被间隔物覆盖的停止层的部分，可以形成每个侧壁上具有L型形状的相邻突出部分之间的开口，并且可以形成光刻此后可以进行处理以形成自对准的接触开口。

4. 发明申请

US20130049104A1 Method of forming a self-aligned contact opening in MOSFET 有权
标题翻译：在MOSFET中形成自对准接触开口的方法
公开(公告)号：US20130049104A1
公开(公告)日：2013-02-28
申请号：US13218476
申请日：2011-08-26
申请人： Sung-Shan Tai , Teng-hao Yeh , Chia-Hui Chen
发明人： Sung-Shan Tai , Teng-hao Yeh , Chia-Hui Chen
IPC分类号： H01L29/78 , H01L21/336 , H01L21/3105
CPC分类号： H01L29/7813 , H01L29/41741 , H01L29/41766 , H01L29/41775 , H01L29/66719 , H01L29/66727 , H01L29/66734
摘要： A method of forming a contact opening in a semiconductor substrate is presented. A plurality of trench gates each having a projecting portion are formed in a semiconductor substrate, and a stop layer is deposited over the semiconductor substrate extending over the projecting portions, wherein each portion of the stop layer along each of the sidewalls of the projecting portions is covered by a spacer. By removing the portions of the stop layer not covered by the spacers by utilizing a relatively higher etching selectivity of the stop layer to the spacers, the openings between adjacent projecting portions with an L-type shape on each sidewall can be formed, and a lithography process can be performed to form self-aligned contact openings thereafter.
摘要翻译：提出了在半导体衬底中形成接触开口的方法。在半导体衬底中形成各自具有突出部分的多个沟槽栅极，并且在突出部分上延伸的半导体衬底上沉积停止层，其中沿着突出部分的每个侧壁的阻挡层的每个部分是被间隔物覆盖。通过利用阻挡层对间隔物的相对较高的蚀刻选择性去除未被间隔物覆盖的停止层的部分，可以形成每个侧壁上具有L型形状的相邻突出部分之间的开口，并且可以形成光刻此后可以进行处理以形成自对准的接触开口。

5. 发明申请

US20150131039A1 Dual-Frequency Bistable Liquid Crystal Display And The Liquid Crystal Mixture Thereof 有权
标题翻译：双频双稳态液晶显示器及其液晶混合物
公开(公告)号：US20150131039A1
公开(公告)日：2015-05-14
申请号：US14074882
申请日：2013-11-08
申请人： Shyh-Yueh WANG , Xin-Jiu Wang , Chia-Hui Chen , Chiu-Yuan Huang , Yen-Liang Chen
发明人： Shyh-Yueh WANG , Xin-Jiu Wang , Chia-Hui Chen , Chiu-Yuan Huang , Yen-Liang Chen
IPC分类号： C09K19/22 , G02F1/137 , G02F1/139 , C09K19/20
CPC分类号： C09K19/22 , C09K19/02 , C09K19/2007 , C09K2019/2078 , G02F1/13718 , G02F1/1391 , G02F1/1392 , G02F2001/13706 , G02F2001/13712
摘要： A dual-frequency bistable liquid crystal display and the liquid crystal mixture thereof includes liquid crystal cell filled with a liquid crystal mixture which contains dual-frequency liquid crystal, chiral compound, and nematic liquid crystal mixture. The liquid crystal mixture has the characteristics of both the dual-frequency liquid crystal and cholesteric liquid crystal. The dual-frequency bistable liquid crystal display is driven in a frequency modulation mode and can be switched between two optical states by taking advantage of the dielectric anisotropy of the liquid crystal, which results in a short switching time and sharp contrast between two optical states. Furthermore, the maintaining of the two optical states requires no voltage, which does not require the use of a high voltage to destabilize the helical structure of the cholesteric liquid crystal, and does not have to go through a metastable stage. Hence, power consumption and switching time are reduced.
摘要翻译：双频双稳态液晶显示器及其液晶混合物包括填充有包含双频液晶，手性化合物和向列型液晶混合物的液晶混合物的液晶单元。该液晶混合物具有双频液晶和胆甾型液晶的特征。双频双稳态液晶显示器以频率调制方式驱动，可通过利用液晶的介电各向异性而在两种光学状态之间切换，从而导致两个光学状态之间的切换时间短和对比度较高。此外，两个光学状态的维持不需要电压，其不需要使用高电压来使得胆甾型液晶的螺旋结构不稳定，并且不必经过亚稳态。因此，功耗和切换时间减少。

6. 发明申请

US20090262888A1 AIMING METHOD AND DEVICE FOR AN EXTRAORAL RADIOGRAPHIC TECHNIQUE 审中-公开
标题翻译：用于外部放射学技术的瞄准方法和装置
公开(公告)号：US20090262888A1
公开(公告)日：2009-10-22
申请号：US12104877
申请日：2008-04-17
申请人： Chia-Hui Chen , Yuk-Kwan Chen
发明人： Chia-Hui Chen , Yuk-Kwan Chen
IPC分类号： A61B6/14
CPC分类号： A61B6/14 , A61B6/587
摘要： An aiming method and a device for an extraoral radiographic technique using a pair of length-adjustable indicator rods. Install a circular locator on each to the indicator rod. While keeping at an appropriate angle, hold the two locators closely beside the cheeks of the patient, and then along the hypothetical axis, secure a radioactive-rays emission head onto one of the circular locator. Following this hypothetical axis to the other locator, and secure a film or a sensor. Aim the radioactive-rays emission head along the hypothetical axis while taking the radiographic shots.
摘要翻译：一种瞄准方法和一种使用一对长度可调指示杆的口外放射照相技术的装置。在每个指示杆上安装一个圆形定位器。在保持适当的角度的同时，将两个定位器紧紧靠在患者的脸颊旁边，然后沿假想轴线将放射线放射线头固定在其中一个圆形定位器上。沿着这个假设的轴线到另一个定位器，并固定胶片或传感器。瞄准放射线射线头沿假想轴线拍摄射线照相。

7. 发明申请

US20090058517A1 High Voltage Tolerant Input Buffer 有权
标题翻译：高电压容限输入缓冲器
公开(公告)号：US20090058517A1
公开(公告)日：2009-03-05
申请号：US11850667
申请日：2007-09-05
申请人： Chia-Hui Chen
发明人： Chia-Hui Chen
IPC分类号： G05F3/02
CPC分类号： G11C7/1078 , G11C7/1084 , H03K19/00315
摘要： An input buffer protection circuit is disclosed which comprises a NMOS transistor with a source, drain and gate coupled to an input terminal of the input buffer, a pad and a chip peripheral positive power supply voltage (VDDP), respectively, and a PMOS transistor with a source, drain and gate coupled to the pad, the input terminal of the input buffer and a first terminal of a biasing circuit, respectively, wherein the biasing circuit has a second terminal coupled to the pad and generates at the first terminal a voltage lower than the pad's input signal voltage (VPAD) to turn on the PMOS transistor when the VPAD is lower than or equal to the VDDP, or a voltage substantial equals to the VPAD to turn off the PMOS transistor when the VPAD is higher than the VDDP.
摘要翻译：公开了一种输入缓冲器保护电路，其包括NMOS晶体管，其源极，漏极和栅极分别耦合到输入缓冲器的输入端，焊盘和芯片周边正电源电压（VDDP），以及PMOS晶体管，耦合到焊盘的源极，漏极和栅极，输入缓冲器的输入端子和偏置电路的第一端子，其中偏置电路具有耦合到焊盘的第二端子，并在第一端子处产生电压较低当VPAD低于或等于VDDP时，焊盘的输入信号电压（VPAD）导通PMOS晶体管，或者当VPAD高于VDDP时，电压基本上等于VPAD关断PMOS晶体管。

8. 发明申请

US20070163082A1 HINGE ROTATIVE ON TWO MUTUAL ORTHOGONAL AXES 有权
标题翻译：铰链旋转在两个相互正交轴上
公开(公告)号：US20070163082A1
公开(公告)日：2007-07-19
申请号：US11620903
申请日：2007-01-08
申请人： Chia-Hui Chen , Tien-Yueh Hsu
发明人： Chia-Hui Chen , Tien-Yueh Hsu
IPC分类号： E05D3/10
CPC分类号： G06F1/1681 , E05D3/10 , E05D11/105 , E05Y2900/606 , G06F1/162 , G06F1/1679 , H04M1/0212 , H04N5/2251 , H04N5/23293 , Y10T16/54038 , Y10T16/5472
摘要： A hinge rotative on two mutual orthogonal axes, it is used in electronic equipment having a screen and a main body; the hinge has a fixing plate having thereon a rotation seat rotative on a vertical axis relatively to the fixing plate and has two connecting legs rotative on a horizontal axis. A nut above the rotation seat is used to screw lock to a rotation shaft, thereby twisting force on the rotation seat can be adjusted; and the connecting legs each has a resilient sleeve forming thereon a plane or forming on its lateral side a strip protruding inwards, by cooperation of the planes/strips with surfaces/recesses on shafts of the connecting legs extending into the resilient sleeves, better positioning effects are obtained; and a connecting area between the rotation shaft and the fixing plate is given with four protrusions, hence the hinge gets a stable structure.
摘要翻译：在两个相互正交的轴上旋转的铰链，用于具有屏幕和主体的电子设备中; 铰链具有固定板，其上具有相对于固定板在垂直轴线上旋转的旋转座，并且具有在水平轴线上旋转的两个连接腿。旋转座上方的螺母用于将锁定旋转到旋转轴，从而可以调节旋转座上的扭转力; 并且连接腿各自具有在其上形成平面的弹性套筒或在其侧面上形成通过平面/条与延伸到弹性套筒中的连接腿的轴上的表面/凹部配合的向内突出的条带，更好的定位效果获得; 并且旋转轴和固定板之间的连接区域具有四个突起，因此铰链得到稳定的结构。

9. 发明授权

US06742221B2 Hinge for a notebook computer 失效
标题翻译：铰链用于笔记本电脑
公开(公告)号：US06742221B2
公开(公告)日：2004-06-01
申请号：US10289658
申请日：2002-11-06
申请人： Sheng-Nan Lu , Chia-Hui Chen , Jih-Nan Tai , Hua-Chung Tseng , Chu-Hsian Chian , Chao-Teh Ho , Chun-Hsi Shen
发明人： Sheng-Nan Lu , Chia-Hui Chen , Jih-Nan Tai , Hua-Chung Tseng , Chu-Hsian Chian , Chao-Teh Ho , Chun-Hsi Shen
IPC分类号： E05D306
CPC分类号： G06F1/1681 , E05D3/10 , E05Y2900/606 , G06F1/162 , Y10S248/917 , Y10S248/919 , Y10T16/547 , Y10T16/5472
摘要： A hinge for a notebook computer is composed of an upper seat, a lower seat, and two arms. The upper seat is rotatably mounted in the lower seat, and the arms are mounted on the upper seat. A monitor of the computer is installed on the arms, and the lower seat is secured on a body of the computer. Therefore, the monitor can be turned about the arms to raise from the body, and turned along with the upper seat about a vertical axis of the lower seat to adjust a visible scope.
摘要翻译：用于笔记本电脑的铰链由上座椅，下座椅和两个臂组成。上座椅可旋转地安装在下座中，臂安装在上座椅上。计算机的显示器安装在臂上，下部座椅固定在计算机的主体上。因此，监视器可以围绕手臂转动以从身体升起，并且与上座椅围绕下座椅的垂直轴线一起转动以调节可见的范围。

10. 发明授权

US08154508B2 Repeated-scan driving method for field sequential color liquid crystal display 有权
标题翻译：用于场顺序彩色液晶显示的重复扫描驱动方法
公开(公告)号：US08154508B2
公开(公告)日：2012-04-10
申请号：US12412374
申请日：2009-03-27
申请人： Shyh-Yueh Wang , Chia-Hui Chen , Chiu-Yuan Huang , Chun-Tsai Chien
发明人： Shyh-Yueh Wang , Chia-Hui Chen , Chiu-Yuan Huang , Chun-Tsai Chien
IPC分类号： G09G3/36
CPC分类号： G09G3/3413 , G09G3/3648 , G09G2310/02 , G09G2310/0235 , G09G2310/0237 , G09G2310/08 , G09G2320/0242
摘要： The present invention discloses a REPEATED-SCAN driving method, which applies to a field sequential color liquid crystal display, wherein each sequential-color cycle of the multiplex-scan signal has at least two stages of scans to increase the luminous fluxes of all colors of backlights and bring closer the total amounts of fluxes, whereby is achieved higher color saturation and better flux uniformity between the rows. Further, the method of the present invention controls the backlights to form dark stages between the intervals respectively of two different colors of the backlights and controls the dark stage to coincide with a color-mixing interval, which is caused by response delay of liquid crystal, to prevent from color distortion caused by color mixing. Therefore, the present invention can generate the pure colors and the designed derived colors accurately.
摘要翻译：本发明公开了一种适用于场顺序彩色液晶显示器的重复扫描驱动方法，其中多路复用扫描信号的每个顺序色循环具有至少两个扫描级，以增加所有颜色的光通量背光，并使焊剂的总量更接近，从而实现更高的颜色饱和度和更好的通量均匀性。此外，本发明的方法控制背光以分别在背光的两种不同颜色的间隔之间形成暗区，并且控制暗阶段与由液晶的响应延迟引起的色混合间隔一致，以防止由颜色混合引起的颜色变形。因此，本发明可以精确地产生纯色和设计的派生色。

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