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1. 发明申请

US20210396994A1 LIGHT DEFLECTOR, DISTANCE MEASURING DEVICE, PROJECTION DEVICE, AND MOBILE OBJECT 有权
公开(公告)号：US20210396994A1
公开(公告)日：2021-12-23
申请号：US17350089
申请日：2021-06-17
申请人： Tetsumaru Fujita , Masayuki Fujishima , Junichi Konishi , Hidenori Kato
发明人： Tetsumaru Fujita , Masayuki Fujishima , Junichi Konishi , Hidenori Kato
IPC分类号： G02B26/08 , G02B26/10
摘要： A light deflector includes a movable device; a drive unit configured to drive the movable device; an input wiring board configured to apply electric power from the drive unit to the movable device; and an anisotropic conductive resin film through which the input wiring board is connected to an input part. The movable device includes a movable portion including a reflector, between a pair of drive beams; a pair of supporting parts supporting the pair of drive beams; and a mount unit secured to the pair of supporting parts. The pair of drive beams supports the movable portion to allow the movable portion to oscillate around an oscillation axis. Each of the pair of drive beams includes a beam member and an actuator. At least one of the pair of supporting parts includes the input part to which electric power is input from the input wiring board to the actuator.

2. 发明授权

US07026206B2 Method of making resistive element having a stable contact resistance 失效
标题翻译：制造具有稳定接触电阻的电阻元件的方法
公开(公告)号：US07026206B2
公开(公告)日：2006-04-11
申请号：US10844272
申请日：2004-05-12
申请人： Junichi Konishi
发明人： Junichi Konishi
IPC分类号： H01L21/8238
CPC分类号： H01L27/11502 , H01L21/76838 , H01L27/0629 , H01L27/11 , H01L27/1112 , H01L27/11507 , H01L28/20
摘要： A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element, and a third polysilicon film. The second polysilicon film is formed in a region adjacent each side edge of the first polysilicon film, and has a contact hole formed therein. The third polysilicon film determines a resistance value of the resistive element, and is continuously formed on the second polysilicon film and the insulating film formed on the first polysilicon film. The MOS transistor is formed in an active region surrounded by the field insulating film, and includes a gate oxide film and a gate electrode including a polysilicon film formed as a lower layer with the second polysilicon film and a polysilicon film formed as an upper layer with the third polysilicon film. A method of making this semiconductor apparatus is also described.
摘要翻译：半导体装置包括MOS晶体管和具有绝缘的第一多晶硅和导电的第二多晶硅膜的电阻元件，用于电阻元件的绝缘膜和第三多晶硅膜。第二多晶硅膜形成在与第一多晶硅膜的每个侧边缘相邻的区域中，并且在其中形成有接触孔。第三多晶硅膜确定电阻元件的电阻值，并且连续地形成在形成在第一多晶硅膜上的第二多晶硅膜和绝缘膜上。 MOS晶体管形成在由场绝缘膜包围的有源区域中，并且包括栅极氧化膜和包括形成为具有第二多晶硅膜的下层的多晶硅膜的栅电极和形成为上层的多晶硅膜，第三多晶硅膜。还描述了制造该半导体装置的方法。

3. 发明申请

US20110203826A1 Power Tool Having Off-Lock Member 有权
标题翻译：电动工具锁定会员
公开(公告)号：US20110203826A1
公开(公告)日：2011-08-25
申请号：US13026147
申请日：2011-02-11
申请人： Nobuhito Hosokawa , Junichi Konishi , Kazumi Tanaka , Yuuki Takeda
发明人： Nobuhito Hosokawa , Junichi Konishi , Kazumi Tanaka , Yuuki Takeda
IPC分类号： B25F5/00
CPC分类号： B25F5/02 , B24B23/02 , B27B5/38
摘要： A power tool includes a motor, a housing that accommodates the motor, a switch that supplies power to the motor, a switch lever that is provided movable relative to the housing to selectively turn ON and OFF the switch, and an off-lock member that is provided movable relative to the switch lever. The off-lock member includes a first engaging part and a second engaging part that are engageable with the housing.
摘要翻译：电动工具包括电动机，容纳电动机的壳体，向电动机供电的开关;开关杆，其设置成相对于壳体可移动以选择性地接通和断开开关;以及脱锁构件，提供可相对于开关杆移动。脱锁构件包括能够与壳体接合的第一接合部和第二接合部。

4. 发明授权

US06765281B2 Semiconductor apparatus with a stable contact resistance and a method of making the semiconductor apparatus 有权
公开(公告)号：US06765281B2
公开(公告)日：2004-07-20
申请号：US10305540
申请日：2002-11-27
申请人： Junichi Konishi
发明人： Junichi Konishi
IPC分类号： H01L2900
CPC分类号： H01L27/11502 , H01L21/76838 , H01L27/0629 , H01L27/11 , H01L27/1112 , H01L27/11507 , H01L28/20
摘要： A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element, and a third polysilicon film. The second polysilicon film is formed in a region adjacent each side edge of the first polysilicon film, and has a contact hole formed therein. The third polysilicon film determines a resistance value of the resistive element, and is continuously formed on the second polysilicon film and the insulating film formed on the first polysilicon film. The MOS transistor is formed in an active region surrounded by the field insulating film, and includes a gate oxide film and a gate electrode including a polysilicon film formed as a lower layer with the second polysilicon film and a polysilicon film formed as an upper layer with the third polysilicon film. A method of making this semiconductor apparatus is also described.

5. 发明授权

US08827004B2 Power tool having off-lock member 有权
标题翻译：电动工具具有脱锁构件
公开(公告)号：US08827004B2
公开(公告)日：2014-09-09
申请号：US13026147
申请日：2011-02-11
申请人： Nobuhito Hosokawa , Junichi Konishi , Kazumi Tanaka , Yuuki Takeda
发明人： Nobuhito Hosokawa , Junichi Konishi , Kazumi Tanaka , Yuuki Takeda
IPC分类号： B23B45/00 , B25F5/02 , B27B5/38 , B24B23/02
CPC分类号： B25F5/02 , B24B23/02 , B27B5/38
摘要： A power tool includes a motor, a housing that accommodates the motor, a switch that supplies power to the motor, a switch lever that is provided movable relative to the housing to selectively turn ON and OFF the switch, and an off-lock member that is provided movable relative to the switch lever. The off-lock member includes a first engaging part and a second engaging part that are engageable with the housing.
摘要翻译：电动工具包括电动机，容纳电动机的壳体，向电动机供电的开关;开关杆，其设置成相对于壳体可移动以选择性地接通和断开开关;以及脱锁构件，提供可相对于开关杆移动。脱锁构件包括能够与壳体接合的第一接合部和第二接合部。

6. 发明授权

US08558831B2 Method and program for drawing distribution area of data points on coordinate plane 有权
标题翻译：绘制坐标平面上数据点分布区域的方法和程序
公开(公告)号：US08558831B2
公开(公告)日：2013-10-15
申请号：US13082743
申请日：2011-04-08
申请人： Hirokazu Yanai , Junichi Konishi
发明人： Hirokazu Yanai , Junichi Konishi
IPC分类号： G06T17/00 , G01B5/26 , G06K9/00
CPC分类号： G06T11/206
摘要： Disclosed is a method for drawing a distribution area of data points on a coordinate plane. The method includes a step in which a data point is selected as a first representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a first direction in a rotation direction is selected as a second representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a next direction in the rotation direction is selected as a next representative point, the step repeatedly selecting the next representative point; and a step in which the representative points are connected by a line to draw a distribution area indication line.
摘要翻译：公开了一种在坐标平面上绘制数据点分布区域的方法。该方法包括将数据点选为第一代表点的步骤; 选择对应于相对于旋转方向上的第一方向形成最小角度的方向的数据点作为第二代表点的步骤; 选择对应于相对于旋转方向上的下一个方向形成最小角度的方向的数据点作为下一个代表点的步骤，该步骤重复选择下一个代表点; 以及代表点通过线连接以绘制分配区域指示行的步骤。

7. 发明授权

US08716874B2 Semiconductor device having metal posts non-overlapping with other devices and layout method of semiconductor device 失效
标题翻译：具有与其他装置不重叠的金属柱和半导体器件的布局方法的半导体器件
公开(公告)号：US08716874B2
公开(公告)日：2014-05-06
申请号：US13228583
申请日：2011-09-09
申请人： Junichi Konishi , Naohiro Ueda
发明人： Junichi Konishi , Naohiro Ueda
IPC分类号： H01L29/40
CPC分类号： H01L27/0207 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/02331 , H01L2224/0235 , H01L2224/02381 , H01L2224/0239 , H01L2224/0392 , H01L2224/0401 , H01L2224/05026 , H01L2224/05073 , H01L2224/051 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/061 , H01L2224/0612 , H01L2224/13023 , H01L2224/131 , H01L2924/00013 , H01L2924/00014 , H01L2924/1305 , H01L2924/01029 , H01L2924/00012 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/014 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device that is resin-sealed in a wafer level after a rewiring layer forming process and a metal post forming process forming a metal post are performed on a semiconductor substrate of the semiconductor device includes devices formed on the semiconductor substrate. Further all of the devices are disposed in respective positions other than positions overlapping a peripheral border of the metal post when viewed from a top of the semiconductor substrate.
摘要翻译：在半导体器件的半导体衬底上，在重新布线层形成工艺和形成金属柱的金属柱形成工艺之后，在晶片级树脂密封的半导体器件包括在半导体衬底上形成的器件。此外，当从半导体衬底的顶部观察时，所有器件都设置在与金属柱的外围边界重叠的位置以外的各个位置。

8. 发明申请

US20110249031A1 METHOD AND PROGRAM FOR DRAWING DISTRIBUTION AREA OF DATA POINTS ON COORDINATE PLANE 有权
标题翻译：绘制坐标平面上数据点分布区域的方法和程序
公开(公告)号：US20110249031A1
公开(公告)日：2011-10-13
申请号：US13082743
申请日：2011-04-08
申请人： Hirokazu YANAI , Junichi Konishi
发明人： Hirokazu YANAI , Junichi Konishi
IPC分类号： G06T3/60
CPC分类号： G06T11/206
摘要： Disclosed is a method for drawing a distribution area of data points on a coordinate plane. The method includes a step in which a data point is selected as a first representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a first direction in a rotation direction is selected as a second representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a next direction in the rotation direction is selected as a next representative point, the step repeatedly selecting the next representative point; and a step in which the representative points are connected by a line to draw a distribution area indication line.
摘要翻译：公开了一种在坐标平面上绘制数据点分布区域的方法。该方法包括将数据点选为第一代表点的步骤; 选择对应于相对于旋转方向上的第一方向形成最小角度的方向的数据点作为第二代表点的步骤; 选择对应于相对于旋转方向上的下一个方向形成最小角度的方向的数据点作为下一个代表点的步骤，该步骤重复选择下一个代表点; 以及代表点通过线连接以绘制分配区域指示行的步骤。

9. 发明授权

US5931039A Electrical bar cutting and bending tool 失效
标题翻译：电棒切割和弯曲工具
公开(公告)号：US5931039A
公开(公告)日：1999-08-03
申请号：US827908
申请日：1997-04-07
申请人： Chikai Yoshimizu , Kihatirou Matsumoto , Junichi Konishi , Hiroyuki Oda , Nobuaki Hatanaka
发明人： Chikai Yoshimizu , Kihatirou Matsumoto , Junichi Konishi , Hiroyuki Oda , Nobuaki Hatanaka
IPC分类号： B21D7/022 , B21D11/12 , B21F1/00 , B21F11/00 , B23D17/02 , B23D29/00 , B23D31/00 , B21D7/024
CPC分类号： B21D11/12 , B21D7/022 , B21F1/00 , B21F11/00 , B23D17/02 , B23D29/00 , B23D31/00 , Y10T83/8805
摘要： An electric cutting and bending tool that transfers the rotation of an electric motor to an output shaft after slowing the rotation through a gear train. An eccentric cam is provided integrally with the output shaft and drives against a pivot plate. The pivot shaft has one end provided with a cam roller in rolling contact with the cam, another end provided with a movable blade and an intermediate portion provided with a pivot pin. A bending roller is provided on the cam to bend a reinforcing rod about a center pin to a desired angle between 0-180.degree..
摘要翻译：一种电动切割和弯曲工具，其在通过齿轮系减速转动之后将电动机的旋转传递到输出轴。偏心凸轮与输出轴一体地设置并且驱动抵靠枢转板。枢轴的一端设置有与凸轮滚动接触的凸轮滚子，另一端设置有可动刀片和设置有枢轴销的中间部分。在凸轮上设置弯曲辊，以将加强杆围绕中心销弯曲至0-180度之间的期望角度。

10. 发明授权

US5310446A Method for producing semiconductor film 失效
标题翻译：半导体膜的制造方法
公开(公告)号：US5310446A
公开(公告)日：1994-05-10
申请号：US912894
申请日：1992-07-13
申请人： Junichi Konishi , Kouichi Maari , Toshihiko Taneda , Akiko Kishimoto
发明人： Junichi Konishi , Kouichi Maari , Toshihiko Taneda , Akiko Kishimoto
IPC分类号： C30B11/00 , C30B13/00 , H01L21/20 , H01L21/336 , H01L21/762 , C30B25/00
CPC分类号： C30B29/06 , C30B11/00 , C30B13/00 , H01L21/2007 , H01L21/76251 , H01L29/66772 , Y10S148/093
摘要： A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.
摘要翻译：一种制造半导体膜的方法，包括以下步骤：制备第一衬底和第二衬底; 将第一衬底叠加在第二衬底上以形成组合衬底的组件; 将能量施加到组合的基板的组件以熔化组件内的部分以在其中形成熔融部分; 冷却熔融部分以结晶该部分以在其中形成单晶结构; 以及将第一衬底与第二衬底分离。该方法可以控制重结晶单晶结构的晶轴取向。

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