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    • 2. 发明授权
    • Inductive coupled pass transistor quadrature voltage controlled oscillator
    • 感应耦合传输晶体管正交压控振荡器
    • US09484858B1
    • 2016-11-01
    • US14986607
    • 2015-12-31
    • Texas Instruments Incorporated
    • Sachin KaliaBradley A. KramerSwaminathan Sankaran
    • H03B27/00H03B5/12
    • H03B27/00H03B5/1215H03B5/1228H03B5/1296H03B2200/0078
    • A quadrature voltage controlled oscillator (QVCO) for providing an oscillating output signal. The QVCO includes a first oscillating circuit for producing a first output signal and a second output signal, those signals being a first set of antiphase signals. The QVCO also includes a second oscillating circuit for producing a first output signal and a second output signal, those signals being a second set of antiphase signals. The first oscillating circuit also has injection circuitry for injecting the second set of antiphase signals without a DC bias into the first output signal and the second output signal, and the second oscillating circuit also has injection circuitry for injecting the first set of antiphase signals without a DC bias into the third output signal and the fourth output signal.
    • 用于提供振荡输出信号的正交压控振荡器(QVCO)。 QVCO包括用于产生第一输出信号和第二输出信号的第一振荡电路,这些信号是第一组反相信号。 QVCO还包括用于产生第一输出信号和第二输出信号的第二振荡电路,这些信号是第二组反相信号。 第一振荡电路还具有用于将第二组反相信号注入到第一输出信号和第二输出信号中的第二组反相信号的注入电路,并且第二振荡电路还具有用于注入第一组反相信号的注入电路, DC偏置到第三输出信号和第四输出信号。
    • 3. 发明申请
    • BALUN WITH INTEGRATED DECOUPLING AS GROUND SHIELD
    • BALUN以集成的解除为地面
    • US20140139297A1
    • 2014-05-22
    • US13683735
    • 2012-11-21
    • TEXAS INSTRUMENTS INCORPORATED
    • Swaminathan SankaranBrian P. GinsburgVijay B. RentalaSrinath M. RamaswamyEunyoung SeokBaher HarounBradley A. KramerHassan AliNirmal C. Warke
    • H01P5/10
    • H01P5/10H03H1/0007H05K1/0216
    • An apparatus is provided. Transmission line cells are formed in a first region. A first metallization layer is formed over the transmission line cells within a portion of the first region. At least a portion of the first metallization layer is electrically coupled to the plurality of transmission line cells. A second metallization layer is formed over the first metallization layer with an interconnect portion, and overlay portion, and a first balun. The interconnect portion at least partially extends into the first region, and the overlay portion is within the first region. The first balun winding is electrically coupled to the overlay portion and partially extends into a second region. The first region partially surrounds the second region. A third metallization layer is formed over the second metallization layer having a second balun winding within the second region, where the second winding is generally coaxial with the first balun winding.
    • 提供了一种装置。 传输线路单元形成在第一区域中。 在第一区域的一部分内的传输线单元上形成第一金属化层。 第一金属化层的至少一部分电耦合到多个传输线单元。 在第一金属化层上形成第二金属化层,其具有互连部分,覆盖部分和第一平衡 - 不平衡变换器。 互连部分至少部分地延伸到第一区域中,并且覆盖部分在第一区域内。 第一平衡 - 不平衡变压器绕组电耦合到覆盖部分并且部分地延伸到第二区域中。 第一区域部分地围绕第二区域。 在第二金属化层上形成第三金属化层,该第二金属化层在第二区域内具有第二平衡 - 不平衡变压器绕组,其中第二绕组大体上与第一平衡 - 不平衡变压器绕组同轴。
    • 6. 发明授权
    • Balun with integrated decoupling as ground shield
    • 平衡 - 不平衡变换器作为接地屏蔽
    • US09166270B2
    • 2015-10-20
    • US13683735
    • 2012-11-21
    • Texas Instruments Incorporated
    • Swaminathan SankaranBrian P. GinsburgVijay B. RentalaSrinath M. RamaswamyEunyoung SeokBaher HarounBradley A. KramerHassan AliNirmal C. Warke
    • H01P5/10H05K1/02H03H1/00
    • H01P5/10H03H1/0007H05K1/0216
    • An apparatus is provided. Transmission line cells are formed in a first region. A first metallization layer is formed over the transmission line cells within a portion of the first region. At least a portion of the first metallization layer is electrically coupled to the plurality of transmission line cells. A second metallization layer is formed over the first metallization layer with an interconnect portion, and overlay portion, and a first balun. The interconnect portion at least partially extends into the first region, and the overlay portion is within the first region. The first balun winding is electrically coupled to the overlay portion and partially extends into a second region. The first region partially surrounds the second region. A third metallization layer is formed over the second metallization layer having a second balun winding within the second region, where the second winding is generally coaxial with the first balun winding.
    • 提供了一种装置。 传输线路单元形成在第一区域中。 在第一区域的一部分内的传输线单元上形成第一金属化层。 第一金属化层的至少一部分电耦合到多个传输线单元。 在第一金属化层上形成第二金属化层,其具有互连部分,覆盖部分和第一平衡 - 不平衡变换器。 互连部分至少部分地延伸到第一区域中,并且覆盖部分在第一区域内。 第一平衡 - 不平衡变压器绕组电耦合到覆盖部分并且部分地延伸到第二区域中。 第一区域部分地围绕第二区域。 在第二金属化层上形成第三金属化层,该第二金属化层在第二区域内具有第二平衡 - 不平衡变压器绕组,其中第二绕组大体上与第一平衡 - 不平衡变压器绕组同轴。