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1. 发明授权

US09570312B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US09570312B2
公开(公告)日：2017-02-14
申请号：US14399360
申请日：2013-05-29
申请人： TOKYO ELECTRON LIMITED
发明人： Ryohei Takeda , Mitsuhiro Tomura , Akinori Kitamura , Shinji Higashitsutsumi , Hiroto Ohtake , Takashi Tsukamoto
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/308 , H01L21/311 , H01L21/02 , H01J37/32
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32165 , H01J37/32192 , H01L21/02115 , H01L21/3086 , H01L21/31116 , H01L21/31122 , H01L21/31144 , H01L21/67069
摘要： Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.
摘要翻译：提供了一种能够有利地形成蚀刻多层膜时使用的掩模的等离子体蚀刻方法。用于蚀刻硼掺杂的无定形碳的等离子体蚀刻方法包括使用包含氯气和氧气的气体混合物的等离子体，并将安装级（3）的温度设定为100℃以上。

2. 发明授权

US09502537B2 Method of selectively removing a region formed of silicon oxide and plasma processing apparatus 有权
标题翻译：选择性地去除由氧化硅形成的区域和等离子体处理装置的方法
公开(公告)号：US09502537B2
公开(公告)日：2016-11-22
申请号：US14469784
申请日：2014-08-27
申请人： TOKYO ELECTRON LIMITED
发明人： Akinori Kitamura , Hiroto Ohtake , Eiji Suzuki
IPC分类号： H01L29/66 , H01J37/32 , H01L21/30 , H01L21/3065 , H01L21/311
CPC分类号： H01L29/66795 , H01J37/32192 , H01J37/32238 , H01J37/32449 , H01J37/32724 , H01J37/32862 , H01J37/32926 , H01L21/3065 , H01L21/31116
摘要： Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.
摘要翻译：提供了一种从包括由氧化硅形成的第一区域和由硅形成的第二区域的工件中选择性地去除第一区域的方法。该方法执行多个序列。每个序列包括：通过在容纳工件的处理容器内产生含有氢，氮和氟的处理气体的等离子体来形成变性区域，以使第一区域的一部分变性，并除去加工中的变性区域容器。此外，在多个序列中的第一序列之后的预定数量的序列之后的序列还包括在形成变性区域之前将工件暴露于在处理容器内产生的还原气体的等离子体。

3. 发明申请

US20140332372A1 PLASMA ETCHING METHOD 有权
标题翻译：等离子体蚀刻法
公开(公告)号：US20140332372A1
公开(公告)日：2014-11-13
申请号：US14271628
申请日：2014-05-07
申请人： Tokyo Electron Limited
发明人： Tomiko Kamada , Akinori Kitamura , Hiroto Ohtake , Yutaka Osada , Yuji Otsuka , Masayuki Kohno , Yusuke Takino , Eiji Suzuki
IPC分类号： C23F4/02
CPC分类号： H01L21/3065 , H01J37/32192 , H01J2237/334 , H01L21/02057 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave.
摘要翻译：可以以高均匀性进行各向同性蚀刻工艺。蚀刻含有硅的蚀刻对象层的等离子体蚀刻方法包括：在处理室中准备具有蚀刻对象层的处理对象物体; 通过产生含有碳氟化合物气体或氟代烃气体但不含氧的第一处理气体的等离子体，去除蚀刻目标层的表面上的氧化物膜; 去除通过产生不含氧的第二处理气体的等离子体去除氧化膜时产生的碳基反应产物; 并且通过利用微波产生含有碳氟化合物气体或氟代烃气体的第三处理气体的等离子体，而不将高频偏置功率施加到用作安装工作台的下部电极，而不将高频偏置功率施加到蚀刻目标层。

4. 发明授权

US10410873B2 Power modulation for etching high aspect ratio features 有权
公开(公告)号：US10410873B2
公开(公告)日：2019-09-10
申请号：US15411241
申请日：2017-01-20
申请人： Tokyo Electron Limited
发明人： Hiroto Ohtake , Takuya Mori
IPC分类号： H01L21/306 , H01L21/3065 , H01J37/32 , H01J37/34
摘要： A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process comprises a power modulation cycle having sequential power application steps that includes: applying a radio frequency (RF) signal to the plasma processing system at a first power level, applying the RF signal to the plasma processing system at a second power level, and applying the RF signal to the plasma processing system at a third power level. Thereafter, the power modulation cycle is repeated at least one more cycle, wherein each modulation cycle includes a modulation time period.

5. 发明授权

US10340123B2 Multi-frequency power modulation for etching high aspect ratio features 有权
公开(公告)号：US10340123B2
公开(公告)日：2019-07-02
申请号：US15604053
申请日：2017-05-24
申请人： Tokyo Electron Limited
发明人： Hiroto Ohtake
IPC分类号： H01J37/32 , H05H1/46 , H01L21/67 , H01L21/311
摘要： A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process includes a power modulation cycle composed of applying a first power modulation sequence to the plasma processing system, and applying a second power modulation sequence to the plasma processing system, the second power modulation sequence being different than the first power modulation sequence.

6. 发明申请

US20180254191A1 PROCESS FOR PERFORMING SELF-LIMITED ETCHING OF ORGANIC MATERIALS 审中-公开
公开(公告)号：US20180254191A1
公开(公告)日：2018-09-06
申请号：US15909697
申请日：2018-03-01
申请人： Tokyo Electron Limited
发明人： Hiroto Ohtake , Takahito Mukawa
IPC分类号： H01L21/311 , H01L21/67 , H01J37/32
CPC分类号： H01L21/31138 , H01J37/32091 , H01J37/321 , H01J37/32449 , H01J2237/3341 , H01L21/67069
摘要： A method and apparatus for selectively etching an organic material on a substrate is described. The method and apparatus includes forming a first plasma-excited process gas containing hydrogen (H) and optionally a noble gas element, exposing the substrate to the first plasma-excited process gas, forming a second plasma-excited process gas containing a noble gas element, exposing the substrate to the second plasma-excited process gas, and cyclically repeating the forming and exposing the first and second plasma-excited process gases at least two cycles to etch the first material selectively relative to the second material.

7. 发明申请

US20170207099A1 POWER MODULATION FOR ETCHING HIGH ASPECT RATIO FEATURES 审中-公开
公开(公告)号：US20170207099A1
公开(公告)日：2017-07-20
申请号：US15411241
申请日：2017-01-20
申请人： Tokyo Electron Limited
发明人： Hiroto Ohtake , Takuya Mori
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01L21/30621 , H01J37/32146 , H01J37/32183 , H01J37/3222 , H01J37/32311 , H01J37/3464 , H01J2237/3346 , H01L21/3065
摘要： A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process comprises a power modulation cycle having sequential power application steps that includes: applying a radio frequency (RF) signal to the plasma processing system at a first power level, applying the RF signal to the plasma processing system at a second power level, and applying the RF signal to the plasma processing system at a third power level. Thereafter, the power modulation cycle is repeated at least one more cycle, wherein each modulation cycle includes a modulation time period.

8. 发明授权

US09373520B2 Multilayer film etching method and plasma processing apparatus 有权
标题翻译：多层膜蚀刻法和等离子体处理装置
公开(公告)号：US09373520B2
公开(公告)日：2016-06-21
申请号：US14603579
申请日：2015-01-23
申请人： TOKYO ELECTRON LIMITED
发明人： Shota Yoshimura , Eiji Suzuki , Tomiko Kamada , Hiroto Ohtake
IPC分类号： H01L21/302 , H01L21/311 , H01L21/027 , H01L21/3213 , H01L21/67 , H01L27/115 , H01J37/32
CPC分类号： H01L21/311 , H01J37/32192 , H01J37/3222 , H01J37/32449 , H01J2237/327 , H01J2237/334 , H01L21/0273 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32137 , H01L21/67069 , H01L27/11524
摘要： In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated.
摘要翻译：在本发明的一个实施例中，提供了一种蚀刻多层膜的方法，该多层膜通过层压具有第一介电常数的第一层和具有第二介电常数的第二层的多个交替层而形成。该方法包括（a）多层膜蚀刻步骤，其中将蚀刻剂气体供应到处理室中，并且微波被供应到处理室中以激发蚀刻剂气体的等离子体; 和（b）抗蚀剂掩模还原步骤，其中将含氧气体和氟碳基气体供应到处理室，并且将微波供应到处理室中以激发含氧气体和碳氟化合物的等离子体的气体。在该方法中，交替重复步骤（a）和（b）。

9. 发明授权

US09305795B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US09305795B2
公开(公告)日：2016-04-05
申请号：US14474593
申请日：2014-09-02
申请人： Tokyo Electron Limited
发明人： Tomiko Kamada , Hiroto Ohtake
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/311 , H01L29/66
CPC分类号： H01L21/3065 , H01J37/32192 , H01L21/31116 , H01L29/66545 , H01L29/66795
摘要： A plasma processing method can etch regions having different densities at the same etching rates. When etching with surface wave plasma, both of layers contain Si and N, a processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas, and a high frequency bias potential is applied to a preset location at a side of a substrate. Further, a power per unit area of the substrate, which generates the high frequency bias potential, is set to be about 0 W/m2 or more to about 400 W/m2 or less.
摘要翻译：等离子体处理方法可以以相同的蚀刻速率蚀刻具有不同密度的区域。当用表面波等离子体进行蚀刻时，两层都含有Si和N，处理气体包括氢氟烃气体，稀有气体和氧气，并且高频偏置电位被施加到位于基质。此外，将产生高频偏置电位的基板的每单位面积的功率设定为约0W / m 2以上至约400W / m 2以下。

10. 发明申请

US20180358233A1 METHOD OF PLASMA ETCHING OF SILICON-CONTAINING ORGANIC FILM USING SULFUR-BASED CHEMISTRY 审中-公开
公开(公告)号：US20180358233A1
公开(公告)日：2018-12-13
申请号：US15995173
申请日：2018-06-01
申请人： Tokyo Electron Limited
发明人： Erdinc Karakas , Li Wang , Andrew Nolan , Christopher Talone , Shyam Sridhar , Alok Ranjan , Hiroto Ohtake
IPC分类号： H01L21/311 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/32137 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SF6 and an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.

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