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1. 发明公开

US20240194459A1 PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20240194459A1
公开(公告)日：2024-06-13
申请号：US18416880
申请日：2024-01-18
申请人： Tokyo Electron Limited
发明人： Kazuya NAGASEKI , Kazuki MOYAMA , Shinji HIMORI , Masanobu HONDA , Satoru TERUUCHI
IPC分类号： H01J37/32
CPC分类号： H01J37/32724
摘要： A processing method and corresponding device for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a processing chamber being decompressible, forming a heat transfer layer for the temperature adjustment target on the support surface of the substrate support, and performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed. The heat transfer layer is deformable and includes at least one of a liquid layer or a deformable solid layer.

2. 发明公开

US20240071772A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20240071772A1
公开(公告)日：2024-02-29
申请号：US18374878
申请日：2023-09-29
申请人： Tokyo Electron Limited
发明人： Shinya ISHIKAWA , Kenta ONO , Masanobu HONDA
IPC分类号： H01L21/311 , H01J37/32 , H01L21/033 , H01L21/66 , H01L21/67
CPC分类号： H01L21/31144 , H01J37/32899 , H01L21/0332 , H01L21/0337 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H01L22/12 , H01J2237/3341
摘要： [Object] To provide a technique for controlling a dimension and/or a shape of an opening formed in an etching film.
[Solution] A substrate processing method according to the present disclosure includes: preparing a substrate having (a) an etching film, (b) a mask film formed on the etching film and having a sidewall that defines at least one opening on the etching film, and (c) a protective film formed to surround the opening on at least the sidewall of the mask film and containing at least one element selected from the group consisting of boron, phosphorus, sulfur, and tin; and etching the etching film by using the protective film and the mask film as a mask.

3. 发明申请

US20220262645A1 ETCHING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM 有权
公开(公告)号：US20220262645A1
公开(公告)日：2022-08-18
申请号：US17734125
申请日：2022-05-02
申请人： Tokyo Electron Limited
发明人： Shinya ISHIKAWA , Kenta ONO , Maju TOMURA , Masanobu HONDA
IPC分类号： H01L21/311 , H01L21/02 , H01L21/67 , C23C16/24 , B05D1/00 , C23C16/56 , B05D3/14 , C23C16/455
摘要： A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.

4. 发明申请

US20210066089A1 ETCHING METHOD AND ETCHING APPARATUS 有权
公开(公告)号：US20210066089A1
公开(公告)日：2021-03-04
申请号：US17006500
申请日：2020-08-28
申请人： TOKYO ELECTRON LIMITED
发明人： Takahiro YOKOYAMA , Maju TOMURA , Yoshihide KIHARA , Masanobu HONDA
IPC分类号： H01L21/311 , H01L21/3065 , H01J37/32
摘要： An etching method includes: preparing a compound in a processing space in which an etching target is accommodated; and etching the etching target with a mask film formed thereon, under an environment where the compound exists. The etching of the etching target includes etching the etching target under an environment where hydrogen (H) and fluorine (F) exist when the etching target contains silicon nitride (SiN), and etching the etching target under an environment where nitrogen (N), hydrogen (H), and fluorine (F) exist when the etching target contains silicon (Si). The compound includes at least one halogen element selected from a group consisting of carbon (C), chlorine (Cl), bromine (Br), and iodine (I).

5. 发明申请

US20200032395A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20200032395A1
公开(公告)日：2020-01-30
申请号：US16522890
申请日：2019-07-26
申请人： TOKYO ELECTRON LIMITED
发明人： Michiko NAKAYA , Toru HISAMATSU , Shinya ISHIKAWA , Sho KUMAKURA , Masanobu HONDA , Yoshihide KIHARA
IPC分类号： C23C16/455 , H01J37/32 , H01L21/02 , H01L21/311 , C23C16/52
摘要： A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.

6. 发明申请

US20190027372A1 ETCHING METHOD 审中-公开
公开(公告)号：US20190027372A1
公开(公告)日：2019-01-24
申请号：US16069995
申请日：2017-05-16
申请人： TOKYO ELECTRON LIMITED
发明人： Akihiro TSUJI , Masanobu HONDA , Hikaru WATANABE
IPC分类号： H01L21/311 , H01L21/8234 , H01L21/768 , H01L21/027 , H01L21/033
摘要： A method for selectively etching a first region made of silicon oxide with respect to a second region made of silicon nitride or another material different from that of the first region. The method includes a first step for generating, in a processing container housing a workpiece to be treated, a plasma of a treatment gas including a fluorocarbon gas, an oxygen-containing gas, and an inert gas, and forming a deposit including fluorocarbon on the object to be treated; and a second step for etching the first region with radicals of the fluorocarbon included in the deposit. The first step and the second step are executed repeatedly.

7. 发明申请

US20170011939A1 ETCHING METHOD 审中-公开
标题翻译：蚀刻方法
公开(公告)号：US20170011939A1
公开(公告)日：2017-01-12
申请号：US15202356
申请日：2016-07-05
申请人： TOKYO ELECTRON LIMITED
发明人： Masahiro TABATA , Takayuki KATSUNUMA , Masanobu HONDA
IPC分类号： H01L21/67 , H01L21/683 , H01L21/311 , H01L21/768
摘要： A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.
摘要翻译：一种用于相对于第二氮化硅区域选择性蚀刻氧化硅的第一区域的方法包括：在等离子体处理设备的处理室中制备包括第一区域和第二区域的目标物体; 以及在所述处理室中产生含有碳氟化合物气体和稀有气体的处理气体的等离子体。在产生处理气体的等离子体中，安装目标物体的下电极的自偏压电位大于或等于4V且小于或等于350V，并且稀有气体的流量在处理气体是处理气体中的碳氟化合物气体的流量的250〜5000倍。

8. 发明申请

US20160099161A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20160099161A1
公开(公告)日：2016-04-07
申请号：US14969291
申请日：2015-12-15
申请人： Tokyo Electron Limited
发明人： Masaya KAWAMATA , Masanobu HONDA , Kazuhiro KUBOTA
IPC分类号： H01L21/67 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32449 , H01L21/3065 , H01L21/31116 , H01L21/67109 , H01L21/67248 , H01L21/6831
摘要： A plasma etching method includes a holding step of holding a substrate, a processing gas supplying step of supplying processing gas to a space between the holding unit and an electrode plate facing the holding unit within the processing chamber, and a high frequency power supplying step of converting the processing gas supplied to the space from the plurality of supply parts into plasma by supplying a high frequency power from a high frequency power supply to at least one of the holding unit and the electrode plate. The processing gas supplying step includes controlling an adjustment unit configured to adjust a supply condition for supplying processing gas with respect to each of the plurality of supply parts such that the supply condition that is adjusted varies between a first position and a second position.
摘要翻译：等离子体蚀刻方法包括保持基板的保持步骤，向处理室内的保持单元和面对保持单元的电极板之间的空间供给处理气体的处理气体供给步骤，以及高频供电步骤通过从高频电源向保持单元和电极板中的至少一个提供高频电力，将从多个供应部分供应到空间的处理气体转换成等离子体。处理气体供给步骤包括控制调整单元，其被配置为调节用于相对于多个供应部件中的每一个供应处理气体的供应条件，使得调节的供应条件在第一位置和第二位置之间变化。

9. 发明申请

US20160032445A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20160032445A1
公开(公告)日：2016-02-04
申请号：US14799650
申请日：2015-07-15
申请人： Tokyo Electron Limited
发明人： Yoshihide KIHARA , Masanobu HONDA , Toru HISAMATSU
IPC分类号： C23C14/34 , H01J37/34 , C23C14/06
CPC分类号： C23C14/34 , C23C14/0021 , C23C14/0036 , C23C14/06 , C23C14/0605 , C23C14/0694 , C23C14/3414 , C23C14/3435 , C23C14/345 , C23C16/30 , C23C16/44 , C23C16/448 , C23C16/505 , C23C16/509 , H01J37/32568 , H01J37/32577 , H01J37/3414 , H01J37/3417 , H01J37/3426 , H01J37/3432 , H01J37/3438 , H01J37/3491
摘要： A plasma processing apparatus includes a first electrode, a second electrode disposed to face the first electrode, a chamber, a first high-frequency power supply, a direct-current power supply, and a gas supply source. The plasma processing apparatus generates first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber; and generates second plasma to sputter the film of the reaction product by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber.
摘要翻译：等离子体处理装置包括第一电极，与第一电极相对设置的第二电极，室，第一高频电源，直流电源和气体供给源。等离子体处理装置通过使第一高频电源向第二电极提供第一高频电力并且使气体供给源提供第一气体而产生第一等离子体以在第二电极上形成反应产物的膜进入房间并通过使第一高频电源向第二电极提供第一高频电力而产生第二等离子体以溅射反应产物的膜，从而使直流电源向第二高频电源提供直流电力电极，并且使气体供应源将第二气体供应到室中。

10. 发明申请

US20150170932A1 ETCHING METHOD 有权
标题翻译：蚀刻方法
公开(公告)号：US20150170932A1
公开(公告)日：2015-06-18
申请号：US14542790
申请日：2014-11-17
申请人： TOKYO ELECTRON LIMITED
发明人： Maju TOMURA , Hikaru WATANABE , Fumiya KOBAYASHI , Kazuhiro KUBOTA , Masanobu HONDA
IPC分类号： H01L21/311
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/32091 , H01J37/32568 , H01J2237/334 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L21/67109 , H01L21/76802 , H01L21/76813
摘要： Provided is an etching method for forming a space with an aspect ratio of 50 or more in a workpiece including a silicon oxide film and a hard mask. The etching method includes: a first step of exposing the workpiece to plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode; and a second step of further exposing the workpiece to the plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode. A distance between the placing table and the upper electrode in the first step is at least 5/3 times of a distance between the placing table and the upper electrode in the first step.
摘要翻译：提供一种用于在包括氧化硅膜和硬掩模的工件中形成具有50以上的纵横比的空间的蚀刻方法。蚀刻方法包括：第一步骤，将工件暴露于电容耦合等离子体处理装置的处理容器内的基于碳氟化合物的气体的等离子体，该处理容器包括用作下电极和上电极的放置台; 以及第二步骤，在包括作为下电极和上电极的放置台的电容耦合等离子体处理装置的处理容器内进一步将工件暴露于基于碳氟化合物的气体的等离子体。在第一步骤中，放置台和上电极之间的距离在第一步骤中为放置台和上电极之间的距离的至少5/3倍。

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