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1. 发明申请

US20160300738A1 Plasma Generation and Control Using a DC Ring 审中-公开
标题翻译：使用直流环等离子体产生和控制
公开(公告)号：US20160300738A1
公开(公告)日：2016-10-13
申请号：US15093031
申请日：2016-04-07
申请人： Tokyo Electron Limited
发明人： Jianping Zhao , Lee Chen , Barton G. Lane , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/67 , H01J37/32
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32568 , H01J37/32577
摘要： The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.
摘要翻译：本发明提供了一种SWP（表面波等离子体）处理系统，其在低微波功率和高气体压力下工作时不会产生过度条件，从而实现更大的工艺窗口。 DC环形子系统可用于调整边缘到中心等离子体密度比，以实现SWP处理系统的均匀性控制。

2. 发明授权

US09396900B2 Radio frequency (RF) power coupling system utilizing multiple RF power coupling elements for control of plasma properties 有权
标题翻译：射频（RF）功率耦合系统利用多个RF功率耦合元件来控制等离子体性质
公开(公告)号：US09396900B2
公开(公告)日：2016-07-19
申请号：US13676265
申请日：2012-11-14
申请人： Tokyo Electron Limited
发明人： Barton Lane , Lee Chen , Peter L. G. Ventzek , Merritt Funk , Jianping Zhao , Radha Sundararajan
IPC分类号： H01J7/24 , H05B31/26 , H01J1/00 , H01J37/32 , H05H1/46
CPC分类号： H01J1/00 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/32174 , H05H1/46 , H05H2001/4652 , H05H2001/4675
摘要： A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.
摘要翻译：提供射频（RF）功率耦合系统。该系统具有被配置为在等离子体处理系统中将RF功率耦合到等离子体的RF电极，多个功率耦合元件被配置为在RF电极上的多个功率耦合位置处电耦合RF功率，以及耦合到多功率耦合的RF功率系统元件，并且被配置为将RF功率信号耦合到多个功率耦合元件中的每一个。多个功率耦合元件包括位于RF电极中心的中心元件和位于RF电极中心偏离中心的外围元件。第一外围RF功率信号与第二外围RF功率信号同相不同。

3. 发明申请

US20130270997A1 LOW ELECTRON TEMPERATURE, EDGE-DENSITY ENHANCED, SURFACE WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS 有权
标题翻译：低电子温度，边缘密度增强，表面波等离子体（SWP）处理方法和装置
公开(公告)号：US20130270997A1
公开(公告)日：2013-10-17
申请号：US13829959
申请日：2013-03-14
申请人： TOKYO ELECTRON LIMITED
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H05H1/46 , H01F41/06 , C23F1/00
CPC分类号： H05H1/46 , C23F1/00 , H01F41/06 , H01J37/32192 , H01J37/3222 , H01L21/3065 , Y10T29/49016
摘要： A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

4. 发明申请

US20160212833A1 LOW ELECTRON TEMPERATURE, EDGE-DENSITY ENHANCED, SURFACE-WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：低电子温度，边缘密度增强，表面波等离子体（SWP）处理方法和装置
公开(公告)号：US20160212833A1
公开(公告)日：2016-07-21
申请号：US15082465
申请日：2016-03-28
申请人： Tokyo Electron Limited
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H05H1/46 , H01J37/32 , H01F41/06
CPC分类号： H05H1/46 , C23F1/00 , H01F41/06 , H01J37/321 , H01J37/32192 , H01J37/3222 , H01L21/3065 , Y10T29/49016
摘要： A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

5. 发明申请

US20140265846A1 SCALABLE AND UNIFORMITY CONTROLLABLE DIFFUSION PLASMA SOURCE 有权
标题翻译：可扩展和均匀可控扩散等离子体源
公开(公告)号：US20140265846A1
公开(公告)日：2014-09-18
申请号：US14209695
申请日：2014-03-13
申请人： Tokyo Electron Limited
发明人： Jianping Zhao , Lee Chen , Radha Sundararajan , Merritt Funk
IPC分类号： H01L21/263
CPC分类号： H01J37/32357 , H01J37/32422 , H01J37/32596
摘要： A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.
摘要翻译：描述了用等离子体处理衬底的方法。特别地，该方法包括在等离子体处理系统中设置衬底，在等离子体处理系统内设置包括至少一个中空阴极的中空阴极等离子体源，并且在多个中空阴极的阴极出口和衬底之间设置栅极。该方法还包括将电网电耦合到电接地，将电压相对于电接地耦合到至少一个空心阴极，以及通过离子诱导的沿着第一轨迹移动的能量电子的二次电子发射在空心阴极中产生等离子体，并且沿着第二轨迹穿过阴极出口和格栅之间的内部空间的第一区域，穿过网格，并且进一步流体地与衬底接触的内部空间的第二区域中扩散较低能量的电子。

6. 发明授权

US10375812B2 Low electron temperature, edge-density enhanced, surface-wave plasma (SWP) processing method and apparatus 有权
公开(公告)号：US10375812B2
公开(公告)日：2019-08-06
申请号：US15082465
申请日：2016-03-28
申请人： Tokyo Electron Limited
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： C23C16/00 , H01L21/306 , H05H1/46 , C23F1/00 , H01L21/3065 , H01J37/32 , H01F41/06
摘要： A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

7. 发明授权

US10354841B2 Plasma generation and control using a DC ring 有权
公开(公告)号：US10354841B2
公开(公告)日：2019-07-16
申请号：US15093031
申请日：2016-04-07
申请人： Tokyo Electron Limited
发明人： Jianping Zhao , Lee Chen , Barton G. Lane , Merritt Funk , Radha Sundararajan
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
摘要： The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

8. 发明授权

US09431218B2 Scalable and uniformity controllable diffusion plasma source 有权
标题翻译：可扩展和均匀可控扩散等离子体源
公开(公告)号：US09431218B2
公开(公告)日：2016-08-30
申请号：US14209695
申请日：2014-03-13
申请人： Tokyo Electron Limited
发明人： Jianping Zhao , Lee Chen , Radha Sundararajan , Merritt Funk
IPC分类号： H05B39/00 , H01J37/32
CPC分类号： H01J37/32357 , H01J37/32422 , H01J37/32596
摘要： A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.
摘要翻译：描述了用等离子体处理衬底的方法。特别地，该方法包括在等离子体处理系统中设置衬底，在等离子体处理系统内设置包括至少一个中空阴极的中空阴极等离子体源，并且在多个中空阴极的阴极出口和衬底之间设置栅极。该方法还包括将电网电耦合到电接地，将电压相对于电接地耦合到至少一个空心阴极，以及通过离子诱导的沿着第一轨迹移动的能量电子的二次电子发射在空心阴极中产生等离子体，并且沿着第二轨迹穿过阴极出口和格栅之间的内部空间的第一区域，穿过网格，并且进一步流体地与衬底接触的内部空间的第二区域中扩散较低能量的电子。

9. 发明申请

US20140263182A1 DC PULSE ETCHER 审中-公开
标题翻译：直流脉冲蚀刻器
公开(公告)号：US20140263182A1
公开(公告)日：2014-09-18
申请号：US13837391
申请日：2013-03-15
申请人： TOKYO ELECTRON LIMITED
发明人： Lee Chen , Radha Sundararajan
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32706
摘要： A method of selectively activating a chemical process using a DC pulse etcher. A processing chamber includes a substrate therein for chemical processing. The method includes coupling energy into a process gas within the processing chamber so as to produce a plasma containing positive ions. A pulsed DC bias is applied to the substrate, which is positioned on a substrate support within the processing chamber. Periodically, the substrate is biased between first and second bias levels, wherein the first bias level is more negative than the second bias level. When the substrate is biased to the first bias level, mono-energetic positive ions are attracted from plasma toward the substrate, the mono-energetic positive ions being selective so as to enhance a selected chemical etch process.
摘要翻译：使用DC脉冲蚀刻器选择性地激活化学处理的方法。处理室包括用于化学处理的基板。该方法包括将能量耦合到处理室内的处理气体中，以产生含有正离子的等离子体。将脉冲DC偏压施加到基板，该基板位于处理室内的基板支撑件上。周期性地，衬底在第一和第二偏置电平之间被偏置，其中第一偏置电平比第二偏置电平更负。当衬底被偏置到第一偏置电平时，单能正离子从等离子体吸引到衬底，单能正离子是选择性的，以便增强选择的化学蚀刻工艺。

10. 发明授权

US09301383B2 Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus 有权
标题翻译：低电子温度，边缘密度增强，表面波等离子体（SWP）处理方法和装置
公开(公告)号：US09301383B2
公开(公告)日：2016-03-29
申请号：US13829959
申请日：2013-03-14
申请人： Tokyo Electron Limited
发明人： Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H05H1/46 , H01F41/06 , H01L21/3065 , H01J37/32
CPC分类号： H05H1/46 , C23F1/00 , H01F41/06 , H01J37/32192 , H01J37/3222 , H01L21/3065 , Y10T29/49016
摘要： A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

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