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1. 发明授权

US10692729B2 Etching process method 有权
公开(公告)号：US10692729B2
公开(公告)日：2020-06-23
申请号：US15625165
申请日：2017-06-16
申请人： Tokyo Electron Limited
发明人： Jin Kudo , Wataru Takayama , Maju Tomura
IPC分类号： H01L21/67 , H01L21/3213 , H01L21/311 , H01L21/3065 , H01L21/02 , H01J37/32
摘要： An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to −35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

2. 发明授权

US09779961B2 Etching method 有权
公开(公告)号：US09779961B2
公开(公告)日：2017-10-03
申请号：US14826569
申请日：2015-08-14
申请人： TOKYO ELECTRON LIMITED
发明人： Yusuke Saitoh , Yu Nagatomo , Hayato Hishinuma , Wataru Takayama , Sho Tominaga , Yuki Kaneko
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461 , H01L21/311 , H01L21/308 , H01L21/033 , H01L21/3065
CPC分类号： H01L21/31116 , H01J2237/334 , H01L21/0332 , H01L21/3065 , H01L21/3085 , H01L21/31144
摘要： Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.

3. 发明授权

US09966273B2 Plasma etching method 有权
公开(公告)号：US09966273B2
公开(公告)日：2018-05-08
申请号：US15361675
申请日：2016-11-28
申请人： Tokyo Electron Limited
发明人： Wataru Takayama , Sho Tominaga , Yoshiki Igarashi
IPC分类号： H01L21/311 , H01L27/11582 , H01L27/11556
CPC分类号： H01L21/31116 , H01L27/11556 , H01L27/11582 , H01L28/00
摘要： There is provided a plasma etching method. The plasma etching method includes generating plasma, by using a first high frequency power output from a first high frequency power supply, from a first processing gas that contains fluorine-containing gas, thereby etching a laminated film of a silicon oxide film and a silicon nitride film through the generated plasma, and generating plasma, by using the first high frequency power, from a second processing gas that contains bromine-containing gas, thereby etching the laminated film through the generated plasma.

4. 发明授权

US09666446B2 Etching method 有权
公开(公告)号：US09666446B2
公开(公告)日：2017-05-30
申请号：US15131221
申请日：2016-04-18
申请人： Tokyo Electron Limited
发明人： Sho Tominaga , Wataru Takayama , Yoshiki Igarashi
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： An etching method includes generating a plasma from a hydrogen-containing gas and a fluorine-containing gas with high-frequency electric power for plasma generation. A first film including a silicon oxide film and a silicon nitride film is etched with the generated plasma in an environment at a temperature lower than or equal to −30° C. The first etch rate of first etching that etches the first film and the second etch rate of second etching that etches a second film having a structure different from the structure of the first film are controlled, so that the difference between the first etch rate and the second etch rate is within ±20% of the first etch rate.

5. 发明授权

US10707090B2 Plasma etching method 有权
公开(公告)号：US10707090B2
公开(公告)日：2020-07-07
申请号：US15949185
申请日：2018-04-10
申请人： Tokyo Electron Limited
发明人： Wataru Takayama , Sho Tominaga , Yoshiki Igarashi
IPC分类号： H01L21/311 , H01L27/11582 , H01L27/11556 , H01L49/02
摘要： A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process.

6. 发明申请

US20190279850A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190279850A1
公开(公告)日：2019-09-12
申请号：US16293725
申请日：2019-03-06
申请人： Tokyo Electron Limited
发明人： Wataru Takayama , Muneyuki Omi , Rei Ibuka , Dai Igarashi , Takayuki Suzuki , Takahiro Murakami
IPC分类号： H01J37/32 , H01L21/67 , H01L21/687 , B08B7/00
摘要： A plasma processing method includes: plasma-processing a substrate placed on a surface of a placement table while causing a coolant of 0° C. or lower to flow through a coolant flow path formed inside the table; placing a dummy substrate on the surface of the placement table in place of the substrate; and removing a reaction product generated due to the plasma processing of the substrate by the plasma of the processing gas from a peripheral edge portion of the surface of the placement table while heating the surface of placement table by the plasma of the processing gas via the dummy substrate in a state where the dummy substrate is placed on the surface of the placement table.

7. 发明授权

US09230824B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09230824B2
公开(公告)日：2016-01-05
申请号：US14574565
申请日：2014-12-18
申请人： TOKYO ELECTRON LIMITED
发明人： Wataru Takayama , Shoichiro Matsuyama , Susumu Nogami , Daisuke Tamura , Kyosuke Hayashi , Jun Kawanobe
IPC分类号： H01L21/308 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32091 , H01L21/31144 , H01L21/32137 , H01L27/11582
摘要： Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.
摘要翻译：提供一种制造半导体器件的方法。该方法包括提供一种待处理对象，其包括通过在等离子体处理装置的处理容器内交替层叠具有不同介电系数的第一膜和第二膜而形成的多层膜; 并且重复地执行包括：向所述处理容器供应包括O 2气体或N 2气体的第一气体和稀有气体，并且激发所述第一气体，将包括碳氟化合物气体或氟代烃气体的第二气体供应到所述处理容器中并激发第二气体，并且将包括HBr气体，含氟气体，氟碳化合物气体或氟代烃气体的第三气体供给到处理容器中并激发第三气体，从而通过掩模蚀刻多层膜。

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