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1. 发明授权

US08164131B2 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08164131B2
公开(公告)日：2012-04-24
申请号：US11633292
申请日：2006-12-04
申请人： Toshio Kobayashi , Saori Hara
发明人： Toshio Kobayashi , Saori Hara
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/792 , H01L29/66833 , H01L29/7923
摘要： A nonvolatile semiconductor memory device includes: a first semiconductor region having first conductivity; a channel formation region in which a channel inversion layer having second conductivity is formed; a second semiconductor region having the second conductivity; a third semiconductor region having the second conductivity; a laminated insulating film formed on the channel formation region; and a control electrode formed on the laminated insulating film. The laminated insulating film includes a first insulating film, a charge storage film, and a second insulating film in order from the channel formation region side. The control electrode extends to above one of the second semiconductor region and the third semiconductor region. The charge storage film present between an extended portion of the control electrode and the second semiconductor region or the third semiconductor region is removed and a portion where the charge storage film is removed is filled with a third insulating film.
摘要翻译：非易失性半导体存储器件包括：具有第一导电性的第一半导体区域; 形成具有第二导电性的沟道反转层的沟道形成区域; 具有第二导电性的第二半导体区域; 具有第二导电性的第三半导体区域; 形成在沟道形成区上的叠层绝缘膜; 以及形成在层叠绝缘膜上的控制电极。叠层绝缘膜从沟道形成区域侧开始依次包括第一绝缘膜，电荷存储膜和第二绝缘膜。控制电极延伸到第二半导体区域和第三半导体区域中的一个之上。除去存在于控制电极的延伸部分与第二半导体区域或第三半导体区域之间的电荷存储膜，并且用第三绝缘膜填充电荷存储膜被除去的部分。

2. 发明申请

US20070145448A1 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20070145448A1
公开(公告)日：2007-06-28
申请号：US11633292
申请日：2006-12-04
申请人： Toshio Kobayashi , Saori Hara
发明人： Toshio Kobayashi , Saori Hara
IPC分类号： H01L29/94
CPC分类号： H01L29/792 , H01L29/66833 , H01L29/7923
摘要： A nonvolatile semiconductor memory device includes: a first semiconductor region having first conductivity; a channel formation region in which a channel inversion layer having second conductivity is formed; a second semiconductor region having the second conductivity; a third semiconductor region having the second conductivity; a laminated insulating film formed on the channel formation region; and a control electrode formed on the laminated insulating film. The laminated insulating film includes a first insulating film, a charge storage film, and a second insulating film in order from the channel formation region side. The control electrode extends to above one of the second semiconductor region and the third semiconductor region. The charge storage film present between an extended portion of the control electrode and the second semiconductor region or the third semiconductor region is removed and a portion where the charge storage film is removed is filled with a third insulating film.
摘要翻译：非易失性半导体存储器件包括：具有第一导电性的第一半导体区域; 形成具有第二导电性的沟道反转层的沟道形成区域; 具有第二导电性的第二半导体区域; 具有第二导电性的第三半导体区域; 形成在沟道形成区上的叠层绝缘膜; 以及形成在层叠绝缘膜上的控制电极。叠层绝缘膜从沟道形成区域侧开始依次包括第一绝缘膜，电荷存储膜和第二绝缘膜。控制电极延伸到第二半导体区域和第三半导体区域中的一个之上。除去存在于控制电极的延伸部分与第二半导体区域或第三半导体区域之间的电荷存储膜，并且用第三绝缘膜填充电荷存储膜被除去的部分。

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