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1. 发明申请

US20100193810A1 Optical Device and the Forming Method Thereof 有权
标题翻译：光学器件及其形成方法
公开(公告)号：US20100193810A1
公开(公告)日：2010-08-05
申请号：US12408795
申请日：2009-03-23
申请人： Tzong-Liang TSAI , Lin-Chieh Kao , Shu-Ying Yang
发明人： Tzong-Liang TSAI , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a plurality of multi-layer film structures disposed on the substrate, and the multi-layer film structure consisted of at least two insulated layer with different reflection index formed alternately; a first semiconductor conductive layer disposed on the substrate to cover the multi-layer film structure; an active layer disposed on the first semiconductor conductive layer; a second semiconductor conductive layer disposed on the active layer; a transparent conductive layer disposed on the second semiconductor conductive layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting effective.
摘要翻译：提供一种光学装置，其包括第一电极; 设置在所述第一电极上的基板; 设置在基板上的多个多层膜结构，并且所述多层膜结构由交替形成的具有不同反射指数的至少两个绝缘层组成; 设置在所述基板上以覆盖所述多层膜结构的第一半导体导电层; 设置在所述第一半导体导电层上的有源层; 设置在所述有源层上的第二半导体导电层; 设置在所述第二半导体导电层上的透明导电层; 以及设置在透明导电层上的第二电极，由此，多层结构可以增加光学器件内的光反射效果或抗反射效果，以提高发光效率。

2. 发明申请

US20090057694A1 LIGHT OPTOELECTRONIC DEVICE AND FORMING METHOD THEREOF 有权
标题翻译：光电光学装置及其形成方法
公开(公告)号：US20090057694A1
公开(公告)日：2009-03-05
申请号：US12061623
申请日：2008-04-02
申请人： Tzong-Liang TSAI
发明人： Tzong-Liang TSAI
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/04 , H01L33/10 , H01L33/105 , H01L33/32
摘要： The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes a first nitrogen-containing compound layer, an II/V group compound layer is provided on the first nitrogen-containing compound layer, a second nitrogen-containing compound layer is provided on the II/V group compound layer, and a third nitrogen-containing compound layer is provided on the second nitrogen-containing compound layer, an epi-stacked stricture with a multi-layer structure is formed on the buffer layer, which includes a first semiconductor conductive layer is formed on the buffer layer, an active layer is formed on the first semiconductor conductive layer, a multi-layer structure is formed between the first semiconductor conductive layer and the active layer, and a second semiconductor conductive layer is formed on the active layer.
摘要翻译：本发明提供具有外延叠层结构的光电器件，其包括衬底，形成在衬底上的缓冲层，其中缓冲层包括第一含氮化合物层，II / V族化合物层设置在第一含氮化合物层上，在II / V族化合物层上设置第二含氮化合物层，在第二含氮化合物层上设置第三含氮化合物层，在缓冲层上形成具有多层结构的叠层结构，其包括在缓冲层上形成第一半导体导电层，在第一半导体导电层上形成有源层，在第一半导体层之间形成多层结构，第一半导体导电层和有源层，以及在有源层上形成第二半导体导电层。

3. 发明申请

US20100279443A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20100279443A1
公开(公告)日：2010-11-04
申请号：US12833648
申请日：2010-07-09
申请人： Tzong-Liang TSAI , Way-Jze WEN , Chang-Han CHIANG , Chih-Sung CHANG
发明人： Tzong-Liang TSAI , Way-Jze WEN , Chang-Han CHIANG , Chih-Sung CHANG
IPC分类号： H01L33/02
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

4. 发明申请

US20100237357A1 Light Emitting Device Having Pillar Structure with Roughness Surface and the Forming Method Thereof 有权
标题翻译：具有粗糙表面的支柱结构的发光装置及其形成方法
公开(公告)号：US20100237357A1
公开(公告)日：2010-09-23
申请号：US12414753
申请日：2009-03-31
申请人： Tzong-Liang TSAI , Lin-Chieh KAO
发明人： Tzong-Liang TSAI , Lin-Chieh KAO
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/42
摘要： A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.
摘要翻译：提供了一种发光器件，其包括衬底，在衬底上具有第一区域和第二区域的第一半导体层; 交流有源层形成在第一半导体层的第一区域上; 在有源表面层上形成第二半导体层，第二半导体层的部分表面是粗糙表面; 具有中空结构的多个柱结构，并且柱结构的外表面和内表面都是粗糙的表面; 形成透明导电层以覆盖多个支柱结构; 在透明导电层上形成第一电极; 并且第二电极形成在第一半导体层的第二区域上。

5. 发明申请

US20090212312A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20090212312A1
公开(公告)日：2009-08-27
申请号：US12269499
申请日：2008-11-12
申请人： Tzong-Liang TSAI , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong-Liang TSAI , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。

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