专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

US20240260481A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20240260481A1
公开(公告)日：2024-08-01
申请号：US18592553
申请日：2024-03-01
申请人： UNITED MICROELECTRONICS CORP.
发明人： Hui-Lin Wang , Chen-Yi Weng , Yi-Wei Tseng , Chin-Yang Hsieh , Jing-Yin Jhang , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , I-Ming Tseng , Tu-Ping Wang
IPC分类号： H10N50/80 , G11C5/06 , G11C11/16 , H01L29/82 , H10B61/00 , H10N50/01 , H10N50/10
CPC分类号： H10N50/80 , G11C5/06 , G11C11/16 , G11C11/161 , H01L29/82 , H10N50/01 , H10N50/10 , G11C2211/5615 , H10B61/00
摘要： A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

2. 发明公开

US20240074328A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20240074328A1
公开(公告)日：2024-02-29
申请号：US18502109
申请日：2023-11-06
申请人： United Microelectronics Corp.
发明人： Hui-Lin Wang , Chen-Yi Weng , Yi-Wei Tseng , Chin-Yang Hsieh , Jing-Yin Jhang , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , I-Ming Tseng , Yu-Ping Wang
IPC分类号： H10N50/80 , G11C5/06 , G11C11/16 , H01L29/82 , H10N50/01 , H10N50/10
CPC分类号： H10N50/80 , G11C5/06 , G11C11/16 , G11C11/161 , H01L29/82 , H10N50/01 , H10N50/10 , G11C2211/5615 , H10B61/00
摘要： A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

3. 发明授权

US11387408B2 Magnetoresistive random access memory and method of manufacturing the same 有权
公开(公告)号：US11387408B2
公开(公告)日：2022-07-12
申请号：US17131767
申请日：2020-12-23
申请人： UNITED MICROELECTRONICS CORP.
发明人： Hui-Lin Wang , Chen-Yi Weng , Chin-Yang Hsieh , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , Jing-Yin Jhang , I-Ming Tseng , Yu-Ping Wang , Chien-Ting Lin , Kun-Chen Ho , Yi-Syun Chou , Chang-Min Li , Yi-Wei Tseng , Yu-Tsung Lai , Jun Xie
IPC分类号： H01L29/82 , H01L43/02 , H01L43/12 , H01L27/22
摘要： A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

4. 发明申请

US20210296572A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20210296572A1
公开(公告)日：2021-09-23
申请号：US17341417
申请日：2021-06-08
申请人： UNITED MICROELECTRONICS CORP.
发明人： Hui-Lin Wang , Chen-Yi Weng , Yi-Wei Tseng , Chin-Yang Hsieh , Jing-Yin Jhang , Yi-Hui Lee , Ying-Cheng Liu , Yi-An Shih , I-Ming Tseng , Yu-Ping Wang
IPC分类号： H01L43/02 , H01L43/12
摘要： A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

5. 发明授权

US11087812B1 Magnetoresistive random-access memory 有权
公开(公告)号：US11087812B1
公开(公告)日：2021-08-10
申请号：US16931438
申请日：2020-07-16
申请人： UNITED MICROELECTRONICS CORP.
发明人： Yi-Hui Lee , I-Ming Tseng , Chiu-Jung Chiu , Chung-Liang Chu , Yu-Chun Chen , Ya-Sheng Feng , Yi-An Shih , Hsiu-Hao Hu , Yu-Ping Wang
IPC分类号： G11C16/08 , G11C11/16
摘要： A MRAM includes a plurality of memory cells, an operation unit, a voltage generator, and an input/output circuit. The operation unit includes multiple groups of memory cells among the plurality of memory cells. The voltage generator is configured to provide a plurality of control signals by voltage-dividing a voltage control signal and selectively output the plurality of control signals to the input/output circuit. The input/output circuit is configured to output a plurality of switching pulse signals to the multiple groups of memory cells according to the plurality of control signals, wherein each switching pulse signal differs in pulse width or level.

6. 发明授权

US10727397B1 Magnetoresistive random access memory cell 有权
公开(公告)号：US10727397B1
公开(公告)日：2020-07-28
申请号：US16261524
申请日：2019-01-29
申请人： UNITED MICROELECTRONICS CORP.
发明人： Hui-Lin Wang , Yi-Wei Tseng , Meng-Jun Wang , Chen-Yi Weng , Chin-Yang Hsieh , Jing-Yin Jhang , Yu-Ping Wang , Chien-Ting Lin , Ying-Cheng Liu , Yi-An Shih , Yi-Hui Lee , I-Ming Tseng
IPC分类号： H01L43/02 , H01L27/22 , H01L43/08 , H01L43/12 , H01L45/00 , H01L27/108 , H01L43/10
摘要： A magneto-resistive random access memory (MRAM) cell includes a substrate having a dielectric layer disposed thereon, a conductive via disposed in the dielectric layer, and a cylindrical stack disposed on the conductive via. The cylindrical stack includes a bottom electrode, a magnetic tunneling junction (MTJ) layer on the bottom electrode, and a top electrode on the MTJ layer. A spacer layer is disposed on a sidewall of the cylindrical stack. The top electrode protrudes from a top surface of the spacer layer.

7. 发明申请

US20180068951A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20180068951A1
公开(公告)日：2018-03-08
申请号：US15285471
申请日：2016-10-04
申请人： UNITED MICROELECTRONICS CORP.
发明人： Ching-Wen Hung , Jia-Rong Wu , Yi-Hui Lee , Ying-Cheng Liu , Chih-Sen Huang
IPC分类号： H01L23/535 , H01L23/528 , H01L27/092 , H01L21/768 , H01L21/8238 , H01L29/66
CPC分类号： H01L23/535 , H01L21/76805 , H01L21/76829 , H01L21/76895 , H01L21/823871 , H01L23/485 , H01L23/528 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L27/092 , H01L29/66545
摘要： A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a first gate structure is formed on the substrate, a first spacer is formed around the first gate structure, and an interlayer dielectric (ILD) layer is formed around the first spacer. Next, a first etching process is performed to remove part of the ILD layer for forming a recess, a second etching process is performed to remove part of the first spacer for expanding the recess, and a contact plug is formed in the recess.

8. 发明申请

US20170103896A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170103896A1
公开(公告)日：2017-04-13
申请号：US15243986
申请日：2016-08-23
申请人： UNITED MICROELECTRONICS CORP.
发明人： Ching-Wen Hung , Jia-Rong Wu , Yi-Hui Lee , Ying-Cheng Liu , Chih-Sen Huang , Chun-Hsien Lin
IPC分类号： H01L21/28 , H01L21/285 , H01L29/49 , H01L29/78 , H01L29/06 , H01L29/66 , H01L21/768
CPC分类号： H01L21/28123 , H01L21/28088 , H01L21/28518 , H01L21/76805 , H01L21/76834 , H01L21/76837 , H01L21/76843 , H01L21/76855 , H01L21/76883 , H01L21/76895 , H01L21/76897 , H01L29/0653 , H01L29/4966 , H01L29/665 , H01L29/66545 , H01L29/66795 , H01L29/7851
摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of : providing a substrate; forming a first gate structure on the substrate; forming a first contact plug adjacent to the first gate structure; and performing a replacement metal gate (RMG) process to transform the first gate structure into metal gate.

9. 发明授权

US09613969B2 Semiconductor structure and method of forming the same 有权
公开(公告)号：US09613969B2
公开(公告)日：2017-04-04
申请号：US14793714
申请日：2015-07-07
申请人： UNITED MICROELECTRONICS CORP.
发明人： Ching-Wen Hung , Wei-Cyuan Lo , Ming-Jui Chen , Chia-Lin Lu , Jia-Rong Wu , Yi-Hui Lee , Ying-Cheng Liu , Yi-Kuan Wu , Chih-Sen Huang , Yi-Wei Chen , Tan-Ya Yin , Chia-Wei Huang , Shu-Ru Wang , Yung-Feng Cheng
IPC分类号： H01L27/11 , H01L29/76 , H01L21/768 , H01L29/78 , H01L23/535 , H01L21/8234 , H01L21/311
CPC分类号： H01L21/823871 , H01L21/31144 , H01L21/76802 , H01L21/76805 , H01L21/76877 , H01L21/76895 , H01L21/76897 , H01L21/823431 , H01L21/823475 , H01L21/823821 , H01L23/485 , H01L23/535 , H01L27/0922 , H01L27/1104 , H01L27/1108 , H01L29/7851 , H01L29/7853
摘要： The present invention provides a semiconductor structure, including a substrate, a plurality of fin structures, a plurality of gate structures, a dielectric layer and a plurality of contact plugs. The substrate has a memory region. The fin structures are disposed on the substrate in the memory region, each of which stretches along a first direction. The gate structures are disposed on the fin structures, each of which stretches along a second direction. The dielectric layer is disposed on the gate structures and the fin structures. The contact plugs are disposed in the dielectric layer and electrically connected to a source/drain region in the fin structure. From a top view, the contact plug has a trapezoid shape or a pentagon shape. The present invention further provides a method for forming the same.

10. 发明授权

US09564371B2 Method for forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US09564371B2
公开(公告)日：2017-02-07
申请号：US14514374
申请日：2014-10-14
申请人： UNITED MICROELECTRONICS CORP.
发明人： Ching-Wen Hung , Tsung-Hung Chang , Jia-Rong Wu , Ching-Ling Lin , Yi-Hui Lee , Chih-Sen Huang , Yi-Wei Chen
IPC分类号： H01L21/8234 , H01L21/768 , H01L21/311
CPC分类号： H01L21/823475 , H01L21/31144 , H01L21/76816 , H01L21/76897 , H01L21/823431
摘要： A manufacturing method for forming a semiconductor device includes: first, a substrate is provided, a fin structure is formed on the substrate, and a plurality of gate structures are formed on the fin structure, next, a hard mask layer and a first photoresist layer are formed on the fin structure, an first etching process is then performed on the first photoresist layer, afterwards, a plurality of patterned photoresist layers are formed on the remaining first photoresist layer and the remaining hard mask layer, where each patterned photoresist layer is disposed right above each gate structure, and the width of each patterned photoresist is larger than the width of each gate structure, and the patterned photoresist layer is used as a hard mask to perform an second etching process to form a plurality of second trenches.
摘要翻译：一种半导体器件的制造方法，其特征在于，首先，在基板上形成有基板，在所述散热片结构上形成有多个栅极结构，然后将硬掩模层和第一光致抗蚀剂层形成在鳍结构上，然后在第一光致抗蚀剂层上进行第一蚀刻工艺，然后在剩余的第一光致抗蚀剂层和剩余的硬掩模层上形成多个图案化的光致抗蚀剂层，其中每个图案化的光致抗蚀剂层被设置每个栅极结构的正上方，并且每个图案化的光致抗蚀剂的宽度大于每个栅极结构的宽度，并且图案化的光致抗蚀剂层用作硬掩模以执行第二蚀刻工艺以形成多个第二沟槽。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式