会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • METHOD OF PROGRAMMING CELL IN MEMORY AND MEMORY APPARATUS UTILIZING THE METHOD
    • 在存储器中编程单元的方法和利用该方法的存储器件
    • US20090116294A1
    • 2009-05-07
    • US12138707
    • 2008-06-13
    • Wen-Jer TsaiTa-Hui WangChih-Wei Lee
    • Wen-Jer TsaiTa-Hui WangChih-Wei Lee
    • G11C11/34
    • G11C16/10
    • A method of programming a first cell in a memory, wherein the first cell has a first S/D region and shares a second S/D region with a second cell that has a third S/D region opposite to the second S/D region. The channels of the first and the second cells are turned on, a first voltage is applied to the first S/D region, a second voltage is applied to the second S/D region and a third voltage is applied to the third S/D region. The second voltage is between the first voltage and the third voltage, and the first to third voltages make carriers flow from the third S/D region to the first S/ID region and cause hot carriers in the channel of the first cell to be injected into the charge storage layer of the first cell.
    • 一种对存储器中的第一单元进行编程的方法,其中所述第一单元具有第一S / D区域并与具有与所述第二S / D区域相反的第三S / D区域的第二单元共享第二S / D区域 。 第一单元和第二单元的通道导通,第一电压施加到第一S / D区,第二电压施加到第二S / D区,第三电压施加到第三S / D区 地区。 第二电压在第一电压和第三电压之间,第一至第三电压使载流子从第三S / D区流向第一S / ID区,并使第一电池的通道中的热载流子注入 进入第一电池的电荷存储层。
    • 2. 发明授权
    • Method of programming cell in memory and memory apparatus utilizing the method
    • 利用该方法在存储器和存储装置中编程单元的方法
    • US07916551B2
    • 2011-03-29
    • US12138707
    • 2008-06-13
    • Wen-Jer TsaiTa-Hui WangChih-Wei Lee
    • Wen-Jer TsaiTa-Hui WangChih-Wei Lee
    • G11C11/34
    • G11C16/10
    • A method of programming a first cell in a memory, wherein the first cell has a first S/D region and shares a second S/D region with a second cell that has a third S/D region opposite to the second S/D region. The channels of the first and the second cells are turned on, a first voltage is applied to the first S/D region, a second voltage is applied to the second S/D region and a third voltage is applied to the third S/D region. The second voltage is between the first voltage and the third voltage, and the first to third voltages make carriers flow from the third S/D region to the first S/D region and cause hot carriers in the channel of the first cell to be injected into the charge storage layer of the first cell.
    • 一种对存储器中的第一单元进行编程的方法,其中所述第一单元具有第一S / D区域并与具有与所述第二S / D区域相反的第三S / D区域的第二单元共享第二S / D区域 。 第一单元和第二单元的通道导通,第一电压施加到第一S / D区,第二电压施加到第二S / D区,第三电压施加到第三S / D区 地区。 第二电压在第一电压和第三电压之间,并且第一至第三电压使载流子从第三S / D区流向第一S / D区,并使第一电池的通道中的热载流子注入 进入第一电池的电荷存储层。
    • 6. 发明授权
    • Antenna structure
    • 天线结构
    • US08106841B2
    • 2012-01-31
    • US12407764
    • 2009-03-19
    • Yin-Yu ChenChen-Yu ChouChih-Wei Lee
    • Yin-Yu ChenChen-Yu ChouChih-Wei Lee
    • H01Q21/24
    • H01Q9/42H01Q1/38H01Q21/24H01Q21/28
    • An antenna structure consists of a substrate, a radiation element, a signal feeding element, and a grounding element. The radiation element includes a first radiator and a second radiator coupled to the first radiator, wherein the first radiator is identical to the second radiator. The signal feeding element is coupled to a joint of the first radiator and the second radiator, wherein the first radiator and the second radiator are symmetrically disposed in the left and right sides of the signal feeding element to permute an array. The grounding element includes a first grounding sub-element and a second grounding sub-element, wherein the first grounding sub-element is coupled between the first radiator and the substrate and the second grounding sub-element is coupled between the second radiator and the substrate. The first grounding sub-element is identical to the second grounding sub-element.
    • 天线结构由衬底,辐射元件,信号馈送元件和接地元件组成。 辐射元件包括第一散热器和耦合到第一散热器的第二辐射器,其中第一散热器与第二辐射器相同。 信号馈送元件耦合到第一散热器和第二散热器的接头,其中第一辐射器和第二辐射器对称地设置在信号馈送元件的左侧和右侧以置换阵列。 接地元件包括第一接地子元件和第二接地子元件,其中第一接地子元件耦合在第一辐射器和衬底之间,而第二接地子元件连接在第二辐射器和衬底之间 。 第一接地子元件与第二接地子元件相同。