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    • 1. 发明授权
    • Flash memory and layout method thereof
    • 闪存及其布局方法
    • US08885383B1
    • 2014-11-11
    • US14037844
    • 2013-09-26
    • Winbond Electronics Corp.
    • Jun-Lin YehTing-Kuo Yen
    • G11C5/06G11C5/02H01L23/52G11C16/26H01L21/768
    • H01L21/768G11C5/025G11C5/063G11C16/26G11C16/30
    • A flash memory is disclosed. A core array stores data. A peripheral circuit accesses the data stored in the core array to generate read data. A off-chip driver (OCD) processes the read data to generate output data. An interconnect structure is electrically connected to the core array, the peripheral circuit, and the OCD and includes three conductive layers. The conductive layers are electrically connected to each other. An uppermost conductive layer is formed over the interconnect structure, electrically connected to the interconnect structure, and includes a first power pad and first power tracks. The first power pad is electrically connected to a power pin via a first bonding wire to receive an operation voltage. The first power tracks are electrically connected between the first power pad and the interconnect structure to transmit the operation voltage to at least one of the core array, the peripheral circuit and the OCD.
    • 公开了闪存。 核心阵列存储数据。 外围电路访问存储在核心阵列中的数据以产生读取数据。 片外驱动器(OCD)处理读取的数据以产生输出数据。 互连结构电连接到芯阵列,外围电路和OCD,并且包括三个导电层。 导电层彼此电连接。 在互连结构上形成最上层的导电层,电连接到互连结构,并且包括第一电源焊盘和第一电力轨道。 第一功率垫通过第一接合线电连接到电源引脚以接收工作电压。 第一电源轨道电连接在第一电源焊盘和互连结构之间,以将操作电压传输到芯阵列,外围电路和OCD中的至少一个。