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1. 发明申请

US20210215560A1 RESONANT PRESSURE SENSOR 有权
公开(公告)号：US20210215560A1
公开(公告)日：2021-07-15
申请号：US17143517
申请日：2021-01-07
申请人： YOKOGAWA ELECTRIC CORPORATION
发明人： Shigeto Iwai , Atsushi Yumoto , Makoto Noro , Takashi Yoshida
IPC分类号： G01L9/00
摘要： An resonant pressure sensor, includes: a housing; a housing-fixed portion that is fixed to the housing; a substrate that includes a substrate-fixed portion that is fixed to the housing-fixed portion and a substrate-separated portion that is separated from the housing-fixed portion and extends from the substrate-fixed portion; a first resonator that is disposed in the substrate-separated portion and that detects a change of a resonance frequency based on a strain in the substrate caused by static pressure applied by the pressure-receiving fluid; and a processor. A pressure-receiving fluid is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate. The processor measures the static pressure based on the detected change of the resonance frequency.

2. 发明申请

US20200284930A1 BUILDING INTEGRITY ASSESSMENT SYSTEM 审中-公开
公开(公告)号：US20200284930A1
公开(公告)日：2020-09-10
申请号：US16806411
申请日：2020-03-02
申请人： Yokogawa Electric Corporation
发明人： Takenori Hida , Kouichi Sato , Takashi Yoshida , Yasushi Higashino , Tetsuya Shimosaka
IPC分类号： G01V1/00 , G08B21/10
摘要： A building integrity assessment system includes: an earthquake detector including: a building bottom sensor at a bottom of a building and that detects acceleration and an earthquake early-warning receiver that receives an earthquake early warning; a cloud computer; and sensors disposed at a plurality of positions in the building and that measures an influence of an earthquake on the building at each of the positions and wirelessly transmits measurement results to the cloud computer. The cloud computer estimates and evaluates the integrity of the building based on the measurement results. In response to the building bottom sensor detecting preliminary tremors or the earthquake early-warning receiver receiving the earthquake early warning, the plurality of sensors measures the influence of the earthquake on the building from a time before a major motion arrives at the building to a time after the arrival.

3. 发明授权

US09139419B2 Resonant transducer, manufacturing method therefor, and multi-layer structure for resonant transducer 有权
标题翻译：谐振换能器，其制造方法和谐振换能器的多层结构
公开(公告)号：US09139419B2
公开(公告)日：2015-09-22
申请号：US14336613
申请日：2014-07-21
申请人： YOKOGAWA ELECTRIC CORPORATION
发明人： Takashi Yoshida , Shuuji Okuda , Shigeto Iwai
IPC分类号： H01L29/84 , B81B3/00 , G01N29/12 , H01L41/09 , H03H3/007 , H03H9/24 , B81B7/02 , B81C1/00 , G01L1/14
CPC分类号： B81B3/0021 , B81B3/0002 , B81B7/02 , B81B2201/0271 , B81B2201/0285 , B81C1/00198 , B81C1/00293 , B81C2203/0145 , G01L1/14 , G01N29/12 , G01N2291/014 , G01N2291/02827 , H01L41/094 , H03H3/0072 , H03H9/2463
摘要： A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.
摘要翻译：谐振换能器包括硅单晶衬底，设置在硅单晶衬底上的硅单晶谐振器，由硅构成的外壳，围绕谐振器间隙，并与硅单晶衬底一起形成腔室，令人兴奋的模块，其被配置为激励所述谐振器;振动检测模块，被配置为检测所述谐振器的振动，设置在所述腔室上的第一层，所述第一层具有通孔，设置在所述第一层上的第二层，第一层和第二层，以及从第二层朝向谐振器延伸的突起，突起与谐振器在空间上分离，突起与第一层隔开第一间隙，第二层与第一层分离通过第二间隙，第一间隙与第二间隙连通。

4. 发明授权

US11243131B2 Resonant pressure sensor and manufacturing method therefor 有权
公开(公告)号：US11243131B2
公开(公告)日：2022-02-08
申请号：US14460684
申请日：2014-08-15
申请人： YOKOGAWA ELECTRIC CORPORATION
发明人： Takashi Yoshida , Yuusaku Yoshida , Atsushi Yumoto , Yoshitaka Suzuki
IPC分类号： G01L9/08 , G01L9/12 , G01L7/08 , G01L7/02 , G01L9/00
摘要： A resonant pressure sensor includes a first substrate including a diaphragm and at least one projection disposed on the diaphragm, and at least one resonator disposed in the first substrate, at least a part of the resonator being included in the projection, and the resonator being disposed between a top of the projection and an intermediate level of the first substrate.

5. 发明授权

US09952250B2 Resonant sensor 有权
公开(公告)号：US09952250B2
公开(公告)日：2018-04-24
申请号：US14829801
申请日：2015-08-19
申请人： YOKOGAWA ELECTRIC CORPORATION
发明人： Yusaku Yoshida , Takashi Yoshida , Atsushi Yumoto
IPC分类号： G01P15/097 , G01P15/08
CPC分类号： G01P15/097 , G01P2015/0828
摘要： A resonant sensor includes a mover that is movable in a first direction, a supporter that extends in a second direction perpendicular to the first direction, the supporter being connected to the mover and a fixer, the supporter supporting the mover which is movable in the first direction, and a resonator that is vibratable, at least a part of the resonator being embedded in the supporter.

6. 发明授权

US09893656B2 Resonant transducer and manufacturing method of resonant transducer 有权
公开(公告)号：US09893656B2
公开(公告)日：2018-02-13
申请号：US14153325
申请日：2014-01-13
申请人： YOKOGAWA ELECTRIC CORPORATION
发明人： Takashi Yoshida , Shigeto Iwai , Yoshitaka Sasaki
IPC分类号： H02N11/00 , H03H3/007 , H03H9/24
CPC分类号： H02N11/00 , H03H3/0072 , H03H9/2463 , Y10T29/49007
摘要： A resonant transducer includes a resonator, a resonator electrodes connected to an end part of the resonator, at least one fixed electrode arranged in the vicinity of the resonator, and a buried part formed between the fixed electrode and the resonator electrode. The resonator, the resonator electrodes and the fixed electrode are formed by the same active layer on a substrate.

7. 发明授权

US09891119B2 Sensor, strain sensor, and pressure sensor 有权
公开(公告)号：US09891119B2
公开(公告)日：2018-02-13
申请号：US14842273
申请日：2015-09-01
申请人： YOKOGAWA ELECTRIC CORPORATION
发明人： Takeru Samejima , Nobuyuki Hamamatsu , Takashi Yoshida
IPC分类号： G01B7/16 , G01L1/18 , G01L19/04 , G01L1/26 , G01D11/30 , G01L19/00
CPC分类号： G01L1/18 , G01D11/30 , G01L1/26 , G01L19/0092 , G01L19/04
摘要： A sensor includes a first structure that is attachable to a measurement specimen, a second structure that is made of material which is smaller in thermal expansion coefficient than the first structure, a bottom surface of the second structure being connected to the first structure, and a detector that is connected to an upper surface of the second structure, the detector being configured to detect a deformation of the second structure.

8. 发明授权

US11428594B2 Resonant pressure sensor with improved linearity 有权
公开(公告)号：US11428594B2
公开(公告)日：2022-08-30
申请号：US17143517
申请日：2021-01-07
申请人： YOKOGAWA ELECTRIC CORPORATION
发明人： Shigeto Iwai , Atsushi Yumoto , Makoto Noro , Takashi Yoshida
IPC分类号： G01L9/00
摘要： A resonant pressure sensor has high linearity and includes: a housing; and a pressure sensing unit that detects a static pressure based on a change value of a resonance frequency and includes: a housing-fixed portion; a substrate that includes a substrate-fixed portion and a substrate-separated portion; the pressure-receiving fluid that is interposed in a gap between the housing-fixed portion and the substrate and envelops the substrate; and a first resonator that is disposed in the substrate-separated portion and detects the change value of the resonance frequency based on a strain in the substrate caused by the static pressure applied by the pressure-receiving fluid, wherein the first resonator is made of a semiconductor material including an impurity, a concentration of the impurity is 1×1020 (cm−3) or higher, and an atomic radius of the impurity is smaller than an atomic radius of the semiconductor material.

9. 发明授权

US11211916B2 Resonant transducer 有权
公开(公告)号：US11211916B2
公开(公告)日：2021-12-28
申请号：US15814481
申请日：2017-11-16
申请人： Yokogawa Electric Corporation
发明人： Takashi Yoshida , Yusaku Yoshida , Makoto Noro , Atsushi Yumoto , Shuhei Yoshita
IPC分类号： H03H9/24 , H03H9/02
摘要： A resonant transducer includes a resonant beam which is formed on a semiconductor substrate, a support beam of which one end is connected to a part of the resonant beam at a predetermined angle, a first electrode which is connected to the resonant beam via the support beam, a second electrode which is disposed adjacent to a center of one side surface of the resonant beam, and a conductor which is disposed between the support beam and the second electrode, the conductor being connected to the first electrode.

10. 发明授权

US09084067B2 Method of manufacturing resonant transducer 有权
标题翻译：制造谐振换能器的方法
公开(公告)号：US09084067B2
公开(公告)日：2015-07-14
申请号：US13689199
申请日：2012-11-29
申请人： Yokogawa Electric Corporation
发明人： Ryuichiro Noda , Takashi Yoshida
IPC分类号： H01L41/22 , H04R31/00 , B81C1/00 , H03H3/007
CPC分类号： H04R31/00 , B81B2201/0271 , B81C1/0015 , B81C1/00666 , B81C2201/0164 , B81C2201/0173 , H03H3/0072 , Y10T29/49005
摘要： A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps.
摘要翻译：一种制造具有振动束的谐振换能器的方法包括：（a）提供SOI衬底，包括：第一硅层; 第一硅层上的氧化硅层; 和在氧化硅层上的第二硅层; （b）通过使用氧化硅层作为蚀刻停止层蚀刻第二硅层，形成通过第二硅层的第一间隙和第二间隙; （c）在第二硅层上形成杂质扩散源层; （d）在第二硅层的表面部分形成杂质扩散层; （e）通过蚀刻去除杂质扩散源层; 以及（f）通过蚀刻去除所述氧化硅层的至少一部分，使得在所述第一硅层和由所述第一和第二间隙包围的所述第二硅层的区域之间形成气隙。

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