专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120216572A1 METHOD AND APPARATUS FOR REMOVING PHOSPHORUS AND BORON FROM POLYSILICON BY CONTINUOUSLY SMELTING 审中-公开
标题翻译：通过连续熔炼从多晶硅中去除磷和硼的方法和装置
公开(公告)号：US20120216572A1
公开(公告)日：2012-08-30
申请号：US13510357
申请日：2010-11-17
申请人： Yi Tan , Wei Dong , Guobin Li , Dachuan Jiang
发明人： Yi Tan , Wei Dong , Guobin Li , Dachuan Jiang
IPC分类号： C01B33/037
CPC分类号： H01L31/182 , C01B33/02 , C01B33/037 , Y02E10/546 , Y02P70/521
摘要： The present invention relates to the polysilicon purification technology field with physical metallurgy technology, especially to a method for removing P and B impurities in the polysilicon using electron beam melting technology. In this method, two electron guns are used for irradiating electron beam to melt polysilicon, meanwhile, P and B are removed in a dual process. P will firstly be removed, and then B will be further removed through further melting for evaporation. At last the low-B and low-P polysilicon evaporated on the deposit board is collected. In the equipment used, the vacuum cover and vacuum circular cylinder constitutes the shell of the device; the inner part of vacuum circular cylinder is the vacuum chamber, which is formed by the left and right part and divided by the separation plate. This method effectively improves the purity of the polysilicon and achieves the requirements for solar grade silicon with perfect purification effect, stable technology, and high efficiency.
摘要翻译：本发明涉及具有物理冶金技术的多晶硅纯化技术领域，特别涉及使用电子束熔化技术去除多晶硅中的P和B杂质的方法。在这种方法中，使用两束电子枪照射电子束来熔化多晶硅，同时P和B在双重过程中被去除。将首先除去P，然后通过进一步的熔化将B进一步除去以进行蒸发。最后收集沉积物上蒸发的低B和低P多晶硅。在使用的设备中，真空盖和真空圆筒构成设备的外壳; 真空圆筒的内部是真空室，由左右部分形成，并被分隔板分隔。该方法有效提高了多晶硅的纯度，达到了完美净化效果，工艺稳定，效率高的太阳能级硅的要求。

IPRDB

热门服务

关于我们

友情链接

联系方式