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1. 发明申请

US20070026619A1 THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR, AND DISPLAY USING THIN-FILM TRANSISTORS 失效
标题翻译：薄膜晶体管，制造薄膜晶体管的方法和使用薄膜晶体管的显示
公开(公告)号：US20070026619A1
公开(公告)日：2007-02-01
申请号：US11428477
申请日：2006-07-03
申请人： Yoshiaki NAKAZAKI , Genshiro KAWACHI , Terunori WARABISAKO , Masakiyo MATSUMURA
发明人： Yoshiaki NAKAZAKI , Genshiro KAWACHI , Terunori WARABISAKO , Masakiyo MATSUMURA
IPC分类号： H01L21/336 , H01L21/00 , H01L21/84
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.
摘要翻译：本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

2. 发明申请

US20120032180A1 THIN-FILM TRANSISTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管器件及其制造方法
公开(公告)号：US20120032180A1
公开(公告)日：2012-02-09
申请号：US13274546
申请日：2011-10-17
申请人： Hisao NAGAI , Sadayoshi HOTTA , Genshiro KAWACHI
发明人： Hisao NAGAI , Sadayoshi HOTTA , Genshiro KAWACHI
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： H01L29/78636 , H01L29/41733 , H01L29/66757 , H01L29/78666 , H01L29/78675 , H01L29/78696
摘要： In the thin-film transistor device: the stacked thickness of either a source electrode or a drain electrode and a corresponding one of silicon layers is the same value or a value close to the same value as the stacked thickness of a first channel layer and a second channel layer; the stacked thickness of the first channel layer and the second channel layer is the same in a region between the source electrode and the drain electrode and above the source electrode and the drain electrode; the first channel layer and the second channel layer are sunken in the region between the source electrode and the drain electrode, following a shape between the source electrode and the drain electrode; and the gate electrode has one region overlapping with the source electrode and an other region overlapping with the drain electrode.
摘要翻译：在薄膜晶体管器件中：源电极或漏电极以及相应的一层硅层的层叠厚度与第一沟道层和第二沟道层的层叠厚度相同的值或接近于相同值的值第二通道层; 第一沟道层和第二沟道层的堆叠厚度在源极和漏极之间以及源电极和漏电极之间的区域中相同; 第一沟道层和第二沟道层在源极和漏极之间的区域中凹陷，源于源极和漏极之间的形状; 并且栅电极具有与源电极重叠的一个区域和与漏电极重叠的其他区域。

3. 发明申请

US20130105797A1 THIN-FILM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US20130105797A1
公开(公告)日：2013-05-02
申请号：US13440320
申请日：2012-04-05
申请人： Hiroshi HAYASHI , Takahiro KAWASHIMA , Genshiro KAWACHI
发明人： Hiroshi HAYASHI , Takahiro KAWASHIMA , Genshiro KAWACHI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66765
摘要： A method of manufacturing a thin-film semiconductor device according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a first insulating film on the gate electrode; forming a semiconductor thin film that is to be a channel layer, on the first insulating film; forming a second insulating film on the semiconductor thin film; irradiating the second insulating film with a beam so as to increase a transmittance of the second insulating film; and forming a source electrode and a drain electrode above the channel layer.
摘要翻译：根据本公开的制造薄膜半导体器件的方法包括：制备衬底; 在所述衬底上形成栅电极; 在栅电极上形成第一绝缘膜; 在所述第一绝缘膜上形成作为沟道层的半导体薄膜; 在所述半导体薄膜上形成第二绝缘膜; 用光束照射第二绝缘膜，以增加第二绝缘膜的透射率; 以及在沟道层上方形成源电极和漏电极。

4. 发明申请

US20120074422A1 THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD 有权
标题翻译：薄膜晶体管阵列器件，EL显示面板，EL显示器件，薄膜晶体管阵列器件制造方法，EL显示面板制造方法
公开(公告)号：US20120074422A1
公开(公告)日：2012-03-29
申请号：US13247254
申请日：2011-09-28
申请人： Arinobu KANEGAE , Genshiro KAWACHI
发明人： Arinobu KANEGAE , Genshiro KAWACHI
IPC分类号： H01L27/15 , H01L33/08 , H01L21/336
CPC分类号： H01L27/3248 , H01L27/124 , H01L27/3262 , H01L27/3279
摘要： A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the source wire and the relay electrode and not electrically connected between the source wire and the relay electrode. The conductive oxide film covers an end portion of the gate wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.
摘要翻译：薄膜晶体管阵列器件包括在第一和第二底栅极晶体管之上的钝化膜。栅极导线位于钝化膜的下面。源极线和继电器导线位于钝化膜的上方。源极线通过钝化膜中的第一孔电连接到第一晶体管的源电极。导电氧化膜位于钝化膜与源极线和继电器电极之间，并且不电连接在源极线和继电器电极之间。导电氧化物膜覆盖通过钝化膜中的第二孔露出的栅极线的端部。导电氧化膜位于继电器电极和第二晶体管的电流供给电极之间，经由钝化膜中的第三孔电连接继电器电极和电流供给电极。

5. 发明申请

US20120074421A1 THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD 有权
标题翻译：薄膜晶体管阵列器件，EL显示面板，EL显示器件，薄膜晶体管阵列器件制造方法，EL显示面板制造方法
公开(公告)号：US20120074421A1
公开(公告)日：2012-03-29
申请号：US13245256
申请日：2011-09-26
申请人： Arinobu KANEGAE , Genshiro KAWACHI
发明人： Arinobu KANEGAE , Genshiro KAWACHI
IPC分类号： H01L27/15 , H01L21/84 , H01L33/16
CPC分类号： H01L27/3248 , H01L27/124 , H01L27/3262 , H01L27/3279
摘要： A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the gate wire and the relay electrode and not electrically connected between the gate wire and the relay electrode. The conductive oxide film covers an end portion of the source wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.
摘要翻译：薄膜晶体管阵列器件包括在第一和第二底栅极晶体管之上的钝化膜。源极线在钝化膜下面。栅极线和继电器电极位于钝化膜的上方。栅极导线经由钝化膜中的第一孔与第一晶体管的栅电极电连接。导电氧化膜位于钝化膜与栅极线和继电器电极之间，并且不电连接在栅极线和继电器电极之间。导电氧化物膜覆盖通过钝化膜中的第二孔暴露的源极线的端部。导电氧化膜位于继电器电极和第二晶体管的电流供给电极之间，经由钝化膜中的第三孔电连接继电器电极和电流供给电极。

6. 发明申请

US20110278583A1 THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF 有权
标题翻译：用于显示装置的薄膜半导体器件及其制造方法
公开(公告)号：US20110278583A1
公开(公告)日：2011-11-17
申请号：US13115409
申请日：2011-05-25
申请人： Hiroshi HAYASHI , Takahiro KAWASHIMA , Genshiro KAWACHI
发明人： Hiroshi HAYASHI , Takahiro KAWASHIMA , Genshiro KAWACHI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/66765
摘要： A thin-film semiconductor device includes, in order, a substrate, a gate electrode, a gate insulating film, a first channel layer, and a second channel layer. The second channel layer includes a protrusion between first top surface end portions. The protrusion has first lateral surfaces that each extend between one of the first top surface end portions and a top surface of the protrusion. An insulation layer is on the top surface of the protrusion. The insulation layer has second lateral surfaces that each extend to one of second top surface end portions of the insulation layer. Two contact layers are each on one of the second top surface end portions of the insulation layer, adjacent one of the second lateral surfaces of the insulation layer, adjacent one of the first lateral surfaces of the protrusion, and on one of the first top surface end portions of the second channel layer. A source electrode is on one of the two contact layers, and a drain electrode is on the other of the two contact layers. The two contact layers and the upper portion of the protrusion of said second channel layer are of opposite conductivity types.
摘要翻译：薄膜半导体器件依次包括衬底，栅电极，栅极绝缘膜，第一沟道层和第二沟道层。第二通道层包括在第一顶表面端部之间的突起。突起具有第一侧表面，每个侧表面在第一顶表面端部之一和突起的顶表面之间延伸。绝缘层位于突起的顶表面上。绝缘层具有第二侧表面，每个侧表面延伸到绝缘层的第二顶表面端部中的一个。两个接触层分别位于绝缘层的第二顶表面端部中的一个上，邻近绝缘层的第二侧表面之一，邻近凸起的第一侧表面之一，并且在第一顶表面第二通道层的端部。源电极位于两个接触层之一上，漏电极位于两个接触层中的另一个上。所述第二通道层的两个接触层和突起的上部具有相反的导电类型。

7. 发明申请

US20080283843A1 DISPLAY DEVICE AND ELECTRONIC DEVICE USING THIN-FILM TRANSISTORS FORMED ON SEMICONDUCTOR THIN FILMS WHICH ARE CRYSTALLIZED ON INSULATING SUBSTRATES 失效
标题翻译：使用形成在绝缘基板上结晶的半导体薄膜上的薄膜晶体管的显示器件和电子器件
公开(公告)号：US20080283843A1
公开(公告)日：2008-11-20
申请号：US12122265
申请日：2008-05-16
申请人： Genshiro KAWACHI
发明人： Genshiro KAWACHI
IPC分类号： H01L33/00
CPC分类号： H01L27/12 , H01L27/1285 , H01L27/13 , H01L29/04 , H01L29/78696
摘要： A method of receiving video data, a control signal, etc. via a non-contact transmission path is adopted, and a receiving circuit for receiving and amplifying a signal is formed on the same insulating substrate as a display device. Thus, there are provided a thin-film transistor which is formed in a semiconductor thin film that is formed on the insulating substrate and crystallized in a predetermined direction, and an inductor for forming an inductive-coupling circuit, which is formed by using an electrically conductive thin film provided on the insulating substrate. The direction of movement of carriers flowing in the thin-film transistor is parallel to the direction of crystallization of the semiconductor thin film, and the inductor and the thin-film transistor are integrated so as to be electrically coupled directly or indirectly.
摘要翻译：采用通过非接触传输路径接收视频数据，控制信号等的方法，并且在与显示装置相同的绝缘基板上形成用于接收和放大信号的接收电路。因此，提供一种薄膜晶体管，其形成在形成在绝缘基板上并在预定方向上结晶的半导体薄膜中，以及形成电感耦合电路的电感器，该感应耦合电路通过使用电设置在绝缘基板上的导电薄膜。在薄膜晶体管中流动的载流子的移动方向平行于半导体薄膜的结晶方向，并且电感器和薄膜晶体管被集成为直接或间接地电耦合。

8. 发明申请

US20080006826A1 THIN-FILM SEMICONDUCTOR DEVICE, LATERAL BIPOLAR THIN-FILM TRANSISTOR, HYBRID THIN-FILM TRANSISTOR, MOS THIN-FILM TRANSISTOR, AND METHOD OF FABRICATING THIN-FILM TRANSISTOR 有权
标题翻译：薄膜半导体器件，横向双极薄膜晶体管，混合薄膜晶体管，MOS薄膜晶体管，以及制造薄膜晶体管的方法
公开(公告)号：US20080006826A1
公开(公告)日：2008-01-10
申请号：US11760926
申请日：2007-06-11
申请人： Genshiro KAWACHI
发明人： Genshiro KAWACHI
IPC分类号： H01L29/00 , H01L29/76
CPC分类号： H01L27/1285 , H01L27/1214 , H01L27/1274 , H01L29/04 , H01L29/0657 , H01L29/7317 , H01L29/78696
摘要： In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.
摘要翻译：在形成在形成于绝缘基板上的半导体薄膜中的发射极，基极和集电极的横向双极晶体管中，半导体薄膜是在规定方向结晶化的半导体薄膜。此外，在形成在绝缘基板上形成的半导体薄膜中的MOS双极型混合型晶体管中，半导体薄膜是在预定方向结晶化的半导体薄膜。

9. 发明申请

US20110230016A1 THIN-FILM SEMICONDUCTOR DEVICE, LATERAL BIPOLAR THIN-FILM TRANSISTOR, HYBRID THIN-FILM TRANSISTOR, MOS THIN-FILM TRANSISTOR, AND METHOD OF FABRICATING THIN-FILM TRANSISTOR 失效
标题翻译：薄膜半导体器件，横向双极薄膜晶体管，混合薄膜晶体管，MOS薄膜晶体管，以及制造薄膜晶体管的方法
公开(公告)号：US20110230016A1
公开(公告)日：2011-09-22
申请号：US13149175
申请日：2011-05-31
申请人： Genshiro KAWACHI
发明人： Genshiro KAWACHI
IPC分类号： H01L21/331
CPC分类号： H01L27/1285 , H01L27/1214 , H01L27/1274 , H01L29/04 , H01L29/0657 , H01L29/7317 , H01L29/78696
摘要： In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.
摘要翻译：在形成在形成于绝缘基板上的半导体薄膜中的发射极，基极和集电极的横向双极晶体管中，半导体薄膜是在规定方向结晶化的半导体薄膜。此外，在形成在绝缘基板上形成的半导体薄膜中的MOS双极型混合型晶体管中，半导体薄膜是在预定方向结晶化的半导体薄膜。

10. 发明申请

US20090044161A1 THIN-FILM TRANSISTOR CIRCUIT, DESIGN METHOD FOR THIN-FILM TRANSISTOR, DESIGN PROGRAM FOR THIN-FILM TRANSISTOR CIRCUIT, DESIGN PROGRAM RECORDING MEDIUM, DESIGN LIBRARY DATABASE, AND DISPLAY DEVICE 失效
标题翻译：薄膜晶体管电路，薄膜晶体管的设计方法，薄膜晶体管电路的设计程序，设计程序记录介质，设计库数据库和显示设备
公开(公告)号：US20090044161A1
公开(公告)日：2009-02-12
申请号：US12246831
申请日：2008-10-07
申请人： Genshiro KAWACHI
发明人： Genshiro KAWACHI
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G06F17/5077 , G06F2212/1028 , G06F2212/2022 , Y02D10/13
摘要： A thin-film transistor circuit includes a crystallized semiconductor thin film two-dimensionally partitioned into crystal-grain-defining areas each of which accommodates a crystal grain larger than a predetermined size, thin-film transistors each of which has a channel region placed at the center position of a corresponding one of the crystal-grain-defining areas, and wirings which interconnect the thin-film transistors.
摘要翻译：薄膜晶体管电路包括二维分割成晶粒限定区域的结晶半导体薄膜，每个晶粒限定区域容纳大于预定尺寸的晶粒，薄膜晶体管中的每一个具有放置在晶粒定义区域中的相应一个的中心位置以及互连薄膜晶体管的布线。

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