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1. 发明申请

US20090002054A1 GATE DRIVE APPARATUS 有权
标题翻译：门驱动装置
公开(公告)号：US20090002054A1
公开(公告)日：2009-01-01
申请号：US12144871
申请日：2008-06-24
申请人： Yoshikazu TSUNODA , Tatsuya Okuda , Masaru Fuku
发明人： Yoshikazu TSUNODA , Tatsuya Okuda , Masaru Fuku
IPC分类号： H03K17/04
CPC分类号： H03K17/168 , H03K17/0406 , H03K17/063 , H03K17/08128
摘要： A gate drive apparatus including a constant-current-pulse gate drive circuit which creates a gate signal for a switching device as a constant-current output, a constant-voltage-pulse gate drive circuit which creates the gate signal as a constant-voltage output, and a decision/switch circuit which switches the operation of the constant-current-pulse gate drive circuit and the operation of the constant-voltage-pulse gate drive circuit. The variance of switching speeds attributed to the variances of threshold voltages and mirror voltages in a plurality of switching devices which are driven by the gate drive apparatus can be suppressed, and the variance of losses can be minimized.
摘要翻译：一种栅极驱动装置，包括：恒定电流脉冲栅极驱动电路，其将作为恒流输出的开关装置的栅极信号产生;恒压脉冲栅极驱动电路，其将栅极信号作为恒定电压输出以及切换恒流脉冲栅极驱动电路的动作和恒压脉冲栅极驱动电路的动作的决定/切换电路。可以抑制归因于由栅极驱动装置驱动的多个开关装置中的阈值电压和镜像电压的方差的开关速度的变化，并且可以使损失的方差最小化。

2. 发明申请

US20130234291A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130234291A1
公开(公告)日：2013-09-12
申请号：US13733723
申请日：2013-01-03
申请人： Noboru MIYAMOTO , Yoshikazu TSUNODA
发明人： Noboru MIYAMOTO , Yoshikazu TSUNODA
IPC分类号： H01L29/92
CPC分类号： H01L29/92 , H01G4/232 , H01G4/30 , H01G4/33 , H01G4/40 , H01L23/49562 , H01L23/49589 , H01L23/642 , H01L24/32 , H01L25/16 , H01L28/82 , H01L28/86 , H01L28/90 , H01L2924/13055 , H01L2924/00
摘要： A semiconductor device includes a first electrode electrically connected to an upper surface of a semiconductor element, a first internal electrode electrically connected to a lower surface of the semiconductor element and having a plurality of first comb finger portions and a first connection portion connecting the plurality of first comb finger portions together, a second electrode electrically connected to the first internal electrode, a second internal electrode electrically connected to a lower surface of the first electrode and having a plurality of second comb finger portions and a second connection portion connecting the plurality of second comb finger portions together, the plurality of second comb finger portions being interdigitated with but not in contact with the plurality of first comb finger portions, and a lower dielectric filling the space between the plurality of first comb finger portions and the plurality of second comb finger portions.
摘要翻译：半导体器件包括电连接到半导体元件的上表面的第一电极，与半导体元件的下表面电连接并具有多个第一梳状指部的第一内部电极和连接多个电连接到第一内部电极的第二电极，与第一电极的下表面电连接并具有多个第二梳形指状部分的第二内部电极和连接多个第二梳状部分的第二连接部分，梳状指部分在一起，多个第二梳状指部分与多个第一梳状指部分相互交错但不接触;以及下部电介质，其填充多个第一梳状指部分与多个第二梳状指状部分之间的空间部分。

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