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    • 1. 发明授权
    • Semiconductor storage device and method for manufacturing same
    • 半导体存储装置及其制造方法
    • US08563961B2
    • 2013-10-22
    • US13515435
    • 2010-12-13
    • Yoshitaka SasagoAkio ShimaSatoru HanzawaTakashi KobayashiMasaharu KinoshitaNorikastsu Takaura
    • Yoshitaka SasagoAkio ShimaSatoru HanzawaTakashi KobayashiMasaharu KinoshitaNorikastsu Takaura
    • H01L47/00
    • H01L45/1666H01L27/224H01L27/2409H01L27/2454H01L27/2481H01L45/04H01L45/06H01L45/12H01L45/1206H01L45/1233H01L45/144H01L45/1608H01L45/1641H01L45/1675H01L45/1683
    • Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line (2) which is provided above the substrate; a first laminated body, which is disposed above the first word line (2), and which has the N+1 (N≧1) number of first inter-gate insulating layers (11-15) and the N number of first semiconductor layers (21p-24p) alternately laminated in the height direction of the substrate; a first bit line (3), which extends in the direction that intersects the first word line (2), and which is disposed above the laminated body; a first gate insulating layer (9) which is provided on the side surface of the N+1 number of the first inter-gate insulating layers (11-15) and those of the N number of the first semiconductor layers (21p-24p); a first channel layer (8p) which is provided on the side surface of the first gate insulating layer (9); and a first variable resistance material layer (7) which is provided on the side surface of the first channel layer. The first variable material layer (7) is in a region where the first word line (2) and the first bit line (3) intersect each other. Furthermore, a polysilicon diode (PD) is used as a selection element.
    • 公开了一种半导体存储装置和用于制造半导体存储装置的方法,由此降低了使用可变电阻材料的存储器的位成本。 半导体存储装置具有:基板; 设置在基板上方的第一字线(2) 第一层叠体,其设置在第一字线(2)的上方,并且具有N + 1(N> = 1)个第一栅极间绝缘层(11-15)和N个第一半导体 层(21p-24p)在基板的高度方向交替层叠; 第一位线(3),其在与所述第一字线(2)相交的方向上延伸,并且位于所述层叠体的上方; 设置在N + 1个第一栅极绝缘层(11-15)的侧表面和N个第一半导体层(21p-24p)的侧表面上的第一栅极绝缘层(9) ; 设置在第一栅极绝缘层(9)的侧面上的第一沟道层(8p); 以及设置在第一沟道层的侧表面上的第一可变电阻材料层(7)。 第一可变材料层(7)在第一字线(2)和第一位线(3)彼此相交的区域中。 此外,使用多晶硅二极管(PD)作为选择元件。
    • 2. 发明申请
    • SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME
    • 半导体存储器件及其制造方法
    • US20120248399A1
    • 2012-10-04
    • US13515435
    • 2010-12-13
    • Yoshitaka SasagoAkio ShimaSatoru HanzawaTakashi KobayashiMasaharu KinoshitaNorikastsu Takaura
    • Yoshitaka SasagoAkio ShimaSatoru HanzawaTakashi KobayashiMasaharu KinoshitaNorikastsu Takaura
    • H01L27/24
    • H01L45/1666H01L27/224H01L27/2409H01L27/2454H01L27/2481H01L45/04H01L45/06H01L45/12H01L45/1206H01L45/1233H01L45/144H01L45/1608H01L45/1641H01L45/1675H01L45/1683
    • Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substrate; a first word line (2) which is provided above the substrate; a first laminated body, which is disposed above the first word line (2), and which has the N+1 (N≧1) number of first inter-gate insulating layers (11-15) and the N number of first semiconductor layers (21p-24p) alternately laminated in the height direction of the substrate; a first bit line (3), which extends in the direction that intersects the first word line (2), and which is disposed above the laminated body; a first gate insulating layer (9) which is provided on the side surface of the N+1 number of the first inter-gate insulating layers (11-15) and those of the N number of the first semiconductor layers (21p-24p); a first channel layer (8p) which is provided on the side surface of the first gate insulating layer (9); and a first variable resistance material layer (7) which is provided on the side surface of the first channel layer. The first variable material layer (7) is in a region where the first word line (2) and the first bit line (3) intersect each other. Furthermore, a polysilicon diode (PD) is used as a selection element.
    • 公开了一种半导体存储装置和用于制造半导体存储装置的方法,由此降低了使用可变电阻材料的存储器的位成本。 半导体存储装置具有:基板; 设置在基板上方的第一字线(2) 第一层叠体,其设置在第一字线(2)的上方,并且具有N + 1(N≥1)个第一栅极间绝缘层(11-15)和N个第一半导体层 (21p-24p)在基板的高度方向上交替层叠; 第一位线(3),其在与所述第一字线(2)相交的方向上延伸,并且位于所述层叠体的上方; 设置在N + 1个第一栅极绝缘层(11-15)的侧表面和N个第一半导体层(21p-24p)的侧表面上的第一栅极绝缘层(9) ; 设置在第一栅极绝缘层(9)的侧面上的第一沟道层(8p); 以及设置在第一沟道层的侧表面上的第一可变电阻材料层(7)。 第一可变材料层(7)在第一字线(2)和第一位线(3)彼此相交的区域中。 此外,使用多晶硅二极管(PD)作为选择元件。