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1. 发明授权

US09123994B2 Antenna structure 有权
标题翻译：天线结构
公开(公告)号：US09123994B2
公开(公告)日：2015-09-01
申请号：US13482453
申请日：2012-05-29
申请人： Young-ju Lee , Byung-chul Kim , Jung-min Park
发明人： Young-ju Lee , Byung-chul Kim , Jung-min Park
IPC分类号： H01Q1/36 , H01Q1/22 , H01Q1/24 , H01Q1/38 , H01Q1/52 , H01Q9/04
CPC分类号： H01Q1/36 , H01Q1/2291 , H01Q1/243 , H01Q1/38 , H01Q1/52 , H01Q9/0414
摘要： An antenna structure includes: a substrate; a ground layer disposed on a first surface of the substrate; a patch antenna unit which is disposed on a second surface of the substrate opposite to the first surface of the substrate, and is configured to receive a signal to be radiated; and a three-dimensional (3D) antenna unit which comprises a shorting leg that is shorted with the patch antenna unit, and is configured to radiate the signal received by the patch antenna unit.
摘要翻译：天线结构包括：基板; 设置在所述基板的第一表面上的接地层; 贴片天线单元，设置在与基板的第一表面相对的基板的第二表面上，并且被配置为接收要辐射的信号; 以及三维（3D）天线单元，其包括与所述贴片天线单元短路的短路支路，并且被配置为辐射由所述贴片天线单元接收的信号。

2. 发明申请

US20080050874A1 Metal-insulator-metal capacitor and method of manufacturing the same 有权
标题翻译：金属绝缘体金属电容器及其制造方法
公开(公告)号：US20080050874A1
公开(公告)日：2008-02-28
申请号：US11508890
申请日：2006-08-24
申请人： Seok-jun Won , Jung-min Park
发明人： Seok-jun Won , Jung-min Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L23/5223 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal-insulator-metal capacitor includes a first electrode in a first wiring level, a second electrode above the first wiring level and extending into a first portion of the first electrode that surrounds the second electrode, and a dielectric film separating the first electrode from the second electrode.
摘要翻译：金属 - 绝缘体 - 金属电容器包括第一布线层的第一电极和位于第一布线层之上的第二电极，并延伸到围绕第二电极的第一电极的第一部分;以及电介质膜，第二电极。

3. 发明申请

US20060163640A1 Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method 有权
标题翻译：通过该方法制造金属 - 绝缘体 - 金属电容器和金属 - 绝缘体 - 金属电容器的方法
公开(公告)号：US20060163640A1
公开(公告)日：2006-07-27
申请号：US11339151
申请日：2006-01-25
申请人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
发明人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
IPC分类号： H01L29/94
CPC分类号： H01L28/60 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
摘要翻译：在制造根据该方法制造的金属 - 绝缘体 - 金属（MIM）电容器和金属 - 绝缘体 - 金属（MIM））电容器的方法中，所述方法包括：在半导体衬底上形成绝缘层图案，层图案具有分别限定要形成电容器单元的区域的多个开口; 在绝缘层图案和半导体衬底上形成下电极导电层; 形成填充所述下电极导电层上的开口的第一牺牲层; 在所述第一牺牲层上形成第二牺牲层; 平面化第二牺牲层; 暴露下电极导电层的上表面; 去除暴露的下电极导电层以形成彼此分离的多个下电极，每个相应于电容器单元; 并且在每个下电极上形成各自对应于电容器单元的电介质层和上电极，以提供构成相同电信号的一个电容器的多个MIM电容器单元。

4. 发明授权

US07807584B2 Method of forming metallic oxide films using atomic layer deposition 有权
标题翻译：使用原子层沉积形成金属氧化物膜的方法
公开(公告)号：US07807584B2
公开(公告)日：2010-10-05
申请号：US11812882
申请日：2007-06-22
申请人： Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
发明人： Ju-youn Kim , Seok-jun Won , Weon-hong Kim , Min-woo Song , Jung-min Park
IPC分类号： H01L21/461
CPC分类号： H01L21/3162 , C23C16/45531 , C23C16/4554 , C23C16/515 , C23C16/52 , H01L21/02178 , H01L21/02181 , H01L21/02205 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： Example embodiments are directed to methods of forming a metallic oxide film using Atomic Layer Deposition while controlling the power reflected by a reactor. The method may include feeding metallic source gases, for example, first and second metallic source gases, and/or a reactant gas including oxygen into the reactor individually. One of the metallic source gases may include an amino-group or an alkoxy-group and another metallic source gas may include neither an amino-group nor an alkoxy-group. A plasma may be produced in the reactor from the reactant gas.
摘要翻译：示例性实施例涉及在控制反应堆反射的功率的同时使用原子层沉积形成金属氧化物膜的方法。该方法可以包括将金属源气体，例如第一和第二金属源气体和/或包含氧气的反应物气体单独地供入反应器。金属源气体之一可以包括氨基或烷氧基，而另一种金属源气体既不包括氨基也不包括烷氧基。可以在反应器中从反应气体中产生等离子体。

5. 发明申请

US20060158829A1 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 有权
公开(公告)号：US20060158829A1
公开(公告)日：2006-07-20
申请号：US11335411
申请日：2006-01-19
申请人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
发明人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
IPC分类号： H01G4/20
CPC分类号： H01G4/10 , H01G4/20
摘要： Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.

6. 发明授权

US07732296B2 Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method 有权
标题翻译：通过该方法制造金属 - 绝缘体 - 金属电容器和金属 - 绝缘体 - 金属电容器的方法
公开(公告)号：US07732296B2
公开(公告)日：2010-06-08
申请号：US11339151
申请日：2006-01-25
申请人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
发明人： Jung-min Park , Seok-jun Won , Min-woo Song , Yong-kuk Jeong , Dae-jin Kwon , Weon-hong Kim
IPC分类号： H01L21/20
CPC分类号： H01L28/60 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern having a plurality of openings that respectively define areas where capacitor cells are to be formed; forming a lower electrode conductive layer on the insulating-layer pattern and on the semiconductor substrate; forming a first sacrificial layer that fills the openings on the lower electrode conductive layer; forming a second sacrificial layer on of the first sacrificial layer; planarizing the second sacrificial layer; exposing an upper surface of the lower electrode conductive layer; removing the exposed lower electrode conductive layer to form a plurality of lower electrodes that are separated from each other, each corresponding to a capacitor cell; and forming dielectric layers and upper electrodes, that are separated from each other, each corresponding to a capacitor cell, on each of the lower electrodes to provide a plurality of MIM capacitor cells constituting one capacitor to which the same electric signal is applied.
摘要翻译：在制造根据该方法制造的金属 - 绝缘体 - 金属（MIM）电容器和金属 - 绝缘体 - 金属（MIM））电容器的方法中，所述方法包括：在半导体衬底上形成绝缘层图案，层图案具有分别限定要形成电容器单元的区域的多个开口; 在绝缘层图案和半导体衬底上形成下电极导电层; 形成填充所述下电极导电层上的开口的第一牺牲层; 在所述第一牺牲层上形成第二牺牲层; 平面化第二牺牲层; 暴露下电极导电层的上表面; 去除暴露的下电极导电层以形成彼此分离的多个下电极，每个相应于电容器单元; 并且在每个下电极上形成各自对应于电容器单元的电介质层和上电极，以提供构成相同电信号的一个电容器的多个MIM电容器单元。

7. 发明授权

US07633112B2 Metal-insulator-metal capacitor and method of manufacturing the same 有权
标题翻译：金属绝缘体金属电容器及其制造方法
公开(公告)号：US07633112B2
公开(公告)日：2009-12-15
申请号：US11508890
申请日：2006-08-24
申请人： Seok-jun Won , Jung-min Park
发明人： Seok-jun Won , Jung-min Park
IPC分类号： H01L29/76
CPC分类号： H01L28/40 , H01L23/5223 , H01L23/53223 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal-insulator-metal capacitor includes a first electrode in a first wiring level, a second electrode above the first wiring level and extending into a first portion of the first electrode that surrounds the second electrode, and a dielectric film separating the first electrode from the second electrode.
摘要翻译：金属 - 绝缘体 - 金属电容器包括第一布线层的第一电极和位于第一布线层之上的第二电极，并延伸到围绕第二电极的第一电极的第一部分;以及电介质膜，第二电极。

8. 发明授权

US07508649B2 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 有权
标题翻译：微电子器件的多层电介质膜及其制造方法
公开(公告)号：US07508649B2
公开(公告)日：2009-03-24
申请号：US11335411
申请日：2006-01-19
申请人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
发明人： Dae-jin Kwon , Seok-jun Won , Weon-hong Kim , Yong-kuk Jeong , Min-woo Song , Jung-min Park
IPC分类号： H01G4/06 , H01G4/20
CPC分类号： H01G4/10 , H01G4/20
摘要： Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.
摘要翻译：提供了能够提高微电子器件的性能特性的多层电介质膜及其制造方法。所述多层电介质膜包括由单一成分氧化物构成的单一成分氧化物层，以及复合成分氧化物层，所述复合成分由包含沿所述单一成分氧化物层的任一侧形成的两种以上不同成分的复合成分氧化物构成，。

9. 发明申请

US20080081409A1 Method of Manufacturing Memory Device 审中-公开
标题翻译：制造存储器件的方法
公开(公告)号：US20080081409A1
公开(公告)日：2008-04-03
申请号：US11858674
申请日：2007-09-20
申请人： Min-woo Song , Seok-jun Won , Weon-hong Kim , Ju-youn Kim , Jung-min Park
发明人： Min-woo Song , Seok-jun Won , Weon-hong Kim , Ju-youn Kim , Jung-min Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852
摘要： A method of manufacturing a memory device that improves electrical characteristics of an MIM capacitor using a zirconium oxide film (ZrO2) as a dielectric film includes: forming a lower metal electrode on a semiconductor substrate; forming a two or more-layered dielectric film including zirconium oxide films on the lower metal electrode; forming an upper metal electrode on the dielectric film; forming an MIM capacitor by patterning the upper metal electrode, the dielectric film, and the lower metal electrode; forming an interlayer insulating film covering the MIM capacitor; forming contacts in the insulating film; and performing heat treatment at a temperature range of 425 to 500° C.
摘要翻译：制造使用氧化锆膜（ZrO 2/2）作为电介质膜的MIM电容器的电气特性的存储器件的制造方法包括：在半导体衬底上形成下部金属电极; 在下金属电极上形成包含氧化锆膜的两层或多层电介质膜; 在所述电介质膜上形成上金属电极; 通过图案化上金属电极，电介质膜和下金属电极形成MIM电容器; 形成覆盖所述MIM电容器的层间绝缘膜; 在绝缘膜中形成接触; 并在425〜500℃的温度范围进行热处理。

10. 发明申请

US20080075881A1 Method of Forming A Metallic Oxide Film Using Atomic Layer Deposition 审中-公开
标题翻译：使用原子层沉积形成金属氧化物膜的方法
公开(公告)号：US20080075881A1
公开(公告)日：2008-03-27
申请号：US11828897
申请日：2007-07-26
申请人： Seok-jun Won , Ju-youn Kim , Jung-min Park
发明人： Seok-jun Won , Ju-youn Kim , Jung-min Park
IPC分类号： C23C16/513 , C23C16/56
CPC分类号： C23C16/4405 , C23C16/40 , C23C16/515
摘要： A method of forming a metallic oxide film using atomic layer deposition includes loading a substrate into a reactor, supplying a metallic source gas into the reactor and absorbing the metallic source gas onto the substrate, purging the remaining metallic source gas that does not react, with the substrate, and directly producing plasma of an N-group-containing oxide reactant gas in the reactor.
摘要翻译：使用原子层沉积法形成金属氧化物膜的方法包括将基板装载到反应器中，将金属源气体供应到反应器中并将金属源气体吸收到基板上，将剩余的不起反应的金属源气体与并且在反应器中直接生成含有N基团的氧化物反应物气体的等离子体。

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