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1. 发明授权

US08624254B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08624254B2
公开(公告)日：2014-01-07
申请号：US13226775
申请日：2011-09-07
申请人： Yuji Egi , Tetsuhiro Tanaka , Toshiyuki Isa , Hidekazu Miyairi , Koji Dairiki , Yoichi Kurosawa , Kunihiko Suzuki
发明人： Yuji Egi , Tetsuhiro Tanaka , Toshiyuki Isa , Hidekazu Miyairi , Koji Dairiki , Yoichi Kurosawa , Kunihiko Suzuki
IPC分类号： H01L29/04 , H01L29/786
CPC分类号： H01L29/78618 , H01L29/78648 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.
摘要翻译：提供了其中抑制电特性变化的高度可靠的晶体管。以高生产率制造其中抑制电特性变化的高度可靠的晶体管。提供了具有随时间图像劣化的显示装置。一种倒置交错薄膜晶体管，其包括在栅极绝缘膜和用作源极和漏极区域的杂质半导体膜之间，包括微晶半导体区域和一对非晶半导体区域的半导体层叠体。在微晶半导体区域中，栅绝缘膜侧的氮浓度低，与非晶半导体接触的区域的氮浓度高。此外，与非晶半导体的界面具有不均匀性。

2. 发明授权

US08138032B2 Method for manufacturing thin film transistor having microcrystalline semiconductor film 有权
标题翻译：具有微晶半导体膜的薄膜晶体管的制造方法
公开(公告)号：US08138032B2
公开(公告)日：2012-03-20
申请号：US12423111
申请日：2009-04-14
申请人： Hidekazu Miyairi , Koji Dairiki , Yuji Egi , Yasuhiro Jinbo , Toshiyuki Isa
发明人： Hidekazu Miyairi , Koji Dairiki , Yuji Egi , Yasuhiro Jinbo , Toshiyuki Isa
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78621 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.
摘要翻译：薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅绝缘层; 半导体层，其包括与所述栅极绝缘层接触的非晶结构中的多个结晶区域，并形成沟道形成区域; 包含赋予一种导电类型的杂质元素的半导体层，其形成源区和漏区; 以及包括在半导体层和半导体层之间的非晶半导体的缓冲层，其包括赋予一种导电类型的杂质元素。晶体区域具有从远离栅极绝缘层和半导体层之间的界面的位置沿着沉积半导体层的方向大致径向生长的倒锥形或倒棱锥晶体颗粒。

3. 发明授权

US08119468B2 Thin film transistor and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08119468B2
公开(公告)日：2012-02-21
申请号：US12423123
申请日：2009-04-14
申请人： Hidekazu Miyairi , Koji Dairiki , Yuji Egi , Yasuhiro Jinbo , Toshiyuki Isa
发明人： Hidekazu Miyairi , Koji Dairiki , Yuji Egi , Yasuhiro Jinbo , Toshiyuki Isa
IPC分类号： H01L21/00 , H01L29/786
CPC分类号： H01L27/1288 , C23C16/0272 , C23C16/24 , C23C16/4404 , H01L27/1214 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78621 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer.
摘要翻译：公开了一种薄膜晶体管，其在具有绝缘表面的衬底上方包括覆盖栅电极的栅绝缘层; 用作沟道形成区域的半导体层; 以及包含赋予一种导电型的杂质元素的半导体层。半导体层以多个结晶粒子分散在非晶硅中的状态存在，并且结晶粒子具有倒锥形或倒棱锥形状。晶体颗粒沿半导体层沉积的方向大致径向生长。倒锥形或倒锥形晶体颗粒的顶点位于与栅极绝缘层和半导体层之间的界面之外。

4. 发明授权

US08916425B2 Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：微晶半导体膜的形成方法及半导体装置的制造方法
公开(公告)号：US08916425B2
公开(公告)日：2014-12-23
申请号：US13184589
申请日：2011-07-18
申请人： Ryota Tajima , Tetsuhiro Tanaka , Takashi Ohtsuki , Ryo Tokumaru , Yuji Egi , Erika Kato , Miyako Morikubo
发明人： Ryota Tajima , Tetsuhiro Tanaka , Takashi Ohtsuki , Ryo Tokumaru , Yuji Egi , Erika Kato , Miyako Morikubo
IPC分类号： H01L21/00 , C30B29/08 , H01L29/786 , H01L29/04 , C30B29/06 , C30B25/18 , C30B25/10
CPC分类号： H01L29/78696 , C30B25/105 , C30B25/183 , C30B29/06 , C30B29/08 , H01L29/04 , H01L29/78618 , H01L29/78648
摘要： A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.
摘要翻译：在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种，并且在第二条件下在晶种上形成微晶半导体膜，所述第二条件允许晶种中的混晶相生长至填充混合晶粒之间的空间。在第一条件下，氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下，处理室中的压力大于1333Pa，13332Pa以下。在第二条件下，氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下，处理室内的压力为1333Pa以上且13332Pa以下。

5. 发明授权

US09310641B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09310641B2
公开(公告)日：2016-04-12
申请号：US12891222
申请日：2010-09-27
申请人： Yuji Egi , Tetsuji Ishitani , Takeshi Nishi
发明人： Yuji Egi , Tetsuji Ishitani , Takeshi Nishi
IPC分类号： G02F1/1335
CPC分类号： G02F1/133528 , G02F2001/133531 , G02F2001/13356
摘要： A display device with a higher contrast ratio is provided. The display device is provided with stacked polarizing plates arranged displaced from a parallel nicol state. Moreover, in the display device, at least one of a pair of stacked polarizing plates is displaced from a parallel state. The pair of stacked polarizing plates is arranged in a cross nicol state. A retardation plate may be provided between the polarizing plate and the substrate. As a result, the contrast ratio can be increased.
摘要翻译：提供了具有较高对比度的显示装置。显示装置设置有从平行尼科尔状态排列的堆叠的偏振片。此外，在显示装置中，一对叠层偏振片中的至少一个从平行状态移位。一对堆叠的偏振片以交叉尼科尔状态布置。可以在偏振板和基板之间设置相位差板。结果，可以提高对比度。

6. 发明授权

US08610846B2 Display device with stacked polarizers 有权
公开(公告)号：US08610846B2
公开(公告)日：2013-12-17
申请号：US13559755
申请日：2012-07-27
申请人： Tetsuji Ishitani , Takeshi Nishi , Yuji Egi
发明人： Tetsuji Ishitani , Takeshi Nishi , Yuji Egi
IPC分类号： G02F1/1335
CPC分类号： G02F1/133528 , G02F2001/133531 , H01L51/5281 , H01L2251/5323
摘要： An object of the present invention is to provide a display device having a high contrast ratio by a simple and easy method. Another object of the present invention is to manufacture such a display device having a high contrast ratio at low cost. The present invention relates to a display device including a first substrate; a second substrate; a layer including a display element, wherein the layer including the display element is interposed between the first substrate and the second substrate; and stacked polarizers on the outer side of the first substrate or the second substrate. The stacked polarizers are arranged to be in a parallel Nicols state and the wavelength distributions of the extinction coefficients of the stacked polarizers are different from each other.

7. 发明授权

US08467023B2 Anti-reflection film and display device 有权
标题翻译：防反射膜和显示装置
公开(公告)号：US08467023B2
公开(公告)日：2013-06-18
申请号：US13323892
申请日：2011-12-13
申请人： Jiro Nishida , Yuji Egi , Takeshi Nishi , Shunpei Yamazaki
发明人： Jiro Nishida , Yuji Egi , Takeshi Nishi , Shunpei Yamazaki
IPC分类号： G02F1/1335
CPC分类号： G02B1/118 , G02B1/14 , G02F1/133502 , G02F2201/38
摘要： An anti-reflection film that can provide high visibility and has an anti-reflection function by which reflection of incident light from external can be further reduced, and a display device having such an anti-reflection film. A plurality of contiguous pyramidal projections is arranged in a geometric pattern, so that reflection of incident light is prevented. In addition, a protective layer formed of a material having a lower refractive index than the pyramidal projections is provided so as to fill a space between the plurality of pyramidal projections. The plurality of pyramidal projections has a hexagonal shape and can be densely arranged with no space therebetween. Further, since six sides of each pyramidal projection are provided at a different angle from the base, light can be effectively scattered in many directions.
摘要翻译：可以提供高可见度并具有抗反射功能的防反射膜，通过该反射功能可以进一步减少来自外部的入射光的反射，以及具有这种防反射膜的显示装置。多个相邻的金字塔形突起以几何图案布置，从而防止入射光的反射。此外，提供由折射率低于金字塔形突起的材料形成的保护层，以填充多个锥体状突起之间的空间。多个金字塔状突起具有六边形形状，并且可以密集地布置，其间没有间隙。此外，由于每个金字塔形突起的六个侧面以与基部不同的角度设置，所以可以在许多方向上有效地散射光。

8. 发明申请

US20110051034A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20110051034A1
公开(公告)日：2011-03-03
申请号：US12942061
申请日：2010-11-09
申请人： Yuji Egi , Tetsuji Ishitani , Takeshi Nishi
发明人： Yuji Egi , Tetsuji Ishitani , Takeshi Nishi
IPC分类号： G02F1/1335
CPC分类号： G02F1/133533 , G02F1/13363 , G02F2001/133531 , G02F2203/04 , G02F2203/64
摘要： To provide a display device having a high contrast ratio by a simple and easy method and to manufacture a high-performance display device at low cost, in a display device having a display element between a pair of light-transmitting substrates, layers each including a polarizer having different wavelength distribution of extinction coefficient from each other with respect to the absorption axes are stacked and provided on an outer side of the light-transmitting substrates. Further, a retardation plate may be provided between the stacked polarizers.
摘要翻译：为了通过简单且容易的方法提供具有高对比度的显示装置并且以低成本制造高性能显示装置，在具有一对透光基板之间的显示元件的显示装置中，在透光性基板的外侧层叠具有彼此相对于吸收轴的消光系数波长分布不同的偏振片。此外，可以在堆叠的偏振器之间设置延迟板。

9. 发明申请

US20100096637A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20100096637A1
公开(公告)日：2010-04-22
申请号：US12423829
申请日：2009-04-15
申请人： Shunpei Yamazaki , Yuji Egi , Shinya Sasagawa , Motomu Kurata
发明人： Shunpei Yamazaki , Yuji Egi , Shinya Sasagawa , Motomu Kurata
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/41733 , H01L29/78696
摘要： Off current of a thin film transistor is reduced, and on current of the thin film transistor is increased, and variation in electric characteristics is reduced. As a structure of semiconductor layers which form a channel formation region of a thin film transistor, a first semiconductor layer including a plurality of crystalline regions is provided on a gate insulating layer side; a second semiconductor layer having an amorphous structure is provided on a source region and drain region side; an insulating layer with a thickness small enough to allow carrier travel is provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is in contact with the gate insulating layer. The second semiconductor layer is provided on an opposite side to a face of the first semiconductor layer which is in contact with the gate insulating layer.
摘要翻译：薄膜晶体管的截止电流减小，薄膜晶体管的导通电流增大，电特性的变化也降低。作为形成薄膜晶体管的沟道形成区域的半导体层的结构，在栅极绝缘层侧设置包括多个结晶区域的第一半导体层，在源区和漏区侧设置具有非晶结构的第二半导体层; 在第一半导体层和第二半导体层之间设置具有足够小以允许载流子行进的厚度的绝缘层。第一半导体层与栅极绝缘层接触。第二半导体层设置在与栅极绝缘层接触的与第一半导体层的面相反的一侧。

10. 发明授权

US07687988B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07687988B2
公开(公告)日：2010-03-30
申请号：US11553747
申请日：2006-10-27
申请人： Tetsuji Ishitani , Yuji Egi , Takeshi Nishi , Koji Moriya
发明人： Tetsuji Ishitani , Yuji Egi , Takeshi Nishi , Koji Moriya
IPC分类号： H01J1/62
CPC分类号： G02F1/133528 , G02B5/3033 , G02B6/0051 , G02B6/0055 , G02B6/0056 , G02F1/1393
摘要： The invention provides a display device of which a contrast ratio is enhanced. By providing stacked polarizing plates so as to be in a cross nicol state, a contrast ratio of a display device can be enhanced. The stacked polarizing plates are stacked outside a light-transmissive insulating substrate in a parallel nicol state. When the number of polarizing plates is four or five in total, a contrast ratio becomes the highest.
摘要翻译：本发明提供一种增强对比度的显示装置。通过提供堆叠的偏振片以使其处于交叉尼科尔状态，可以提高显示装置的对比度。层叠的偏振片堆叠在平行尼科尔状态的透光性绝缘基板的外侧。当偏振板的数量总共为4或5个时，对比度变得最高。

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