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1. 发明申请

US20110140075A1 LIGHT-EMITTING DEVICE INCLUDING QUANTUM DOTS 有权
标题翻译：发光装置，包括量子点
公开(公告)号：US20110140075A1
公开(公告)日：2011-06-16
申请号：US12896856
申请日：2010-10-02
申请人： Zhaoqun ZHOU , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
发明人： Zhaoqun ZHOU , Peter T. Kazlas , Mead Misic , Zoran Popovic , John Spencer Morris
IPC分类号： H01L33/04 , B82Y99/00
CPC分类号： H01L51/5012 , B82Y20/00 , H01L51/5048 , H01L51/5088 , H01L2251/552
摘要： A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.
摘要翻译：公开了包括包含量子点的发射材料的发光器件。在一个实施例中，该器件包括阴极，包含能够传输和注入包含无机材料的电子的材料的层，包含量子点的发射层，包含能够传输空穴的材料的层，包括空穴注入材料，和阳极。在某些实施例中，空穴注入材料可以是p型掺杂的空穴传输材料。在某些优选实施例中，量子点包括半导体纳米晶体。在本发明的另一方面，提供了一种发光器件，其中器件具有不大于1240 /λ的初始导通电压，其中λ表示由发射层发射的光的波长（nm）。公开了其它发光器件和方法。

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