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1. 发明授权

US09865330B2 Stable SRAM bitcell design utilizing independent gate FinFET 有权
公开(公告)号：US09865330B2
公开(公告)日：2018-01-09
申请号：US12939260
申请日：2010-11-04
申请人： Seong-Ook Jung , Mingu Kang , Hyunkook Park , Seung-Chul Song , Mohamed Abu-Rahma , Beom-Mo Han , Lixin Ge , Zhongze Wang
发明人： Seong-Ook Jung , Mingu Kang , Hyunkook Park , Seung-Chul Song , Mohamed Abu-Rahma , Beom-Mo Han , Lixin Ge , Zhongze Wang
IPC分类号： G11C11/412 , H01L27/11
CPC分类号： G11C11/4125 , H01L27/1104 , Y10T29/49117
摘要： Stable SRAM cells utilizing Independent Gate FinFET architectures provide improvements over conventional SRAM cells in device parameters such as Read Static Noise Margin (RSNM) and Write Noise Margin (WNM). Exemplary SRAM cells comprise a pair of storage nodes, a pair of bit lines, a pair of pull-up devices, a pair of pull-down devices and a pair of pass-gate devices. A first control signal and a second control signal are configured to adjust drive strengths of the pass-gate devices, and a third control signal is configured to adjust drive strengths of the pull-up devices, wherein the first control signal is routed orthogonal to a bit line direction, and the second and third control signals are routed in a direction same as the bit line direction. RSNM and WNM are improved by adjusting drive strengths of the pull-up and pass-gate devices during read and write operations.

2. 发明授权

US09495503B2 Method and apparatus to enable a selective push process during manufacturing to improve performance of a selected circuit of an integrated circuit 有权
标题翻译：在制造期间能够进行选择性推送过程以改善集成电路的选定电路的性能的方法和装置
公开(公告)号：US09495503B2
公开(公告)日：2016-11-15
申请号：US13372160
申请日：2012-02-13
申请人： Jeffrey Herbert Fischer , Manish Garg , Zhongze Wang
发明人： Jeffrey Herbert Fischer , Manish Garg , Zhongze Wang
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F2217/12 , Y02P90/265
摘要： Provided are methods and apparatus for enabling selective push processing during design and fabrication of an integrated circuit to improve performance of selected circuits of the integrated circuit. An exemplary method includes identifying a critical portion of an integrated circuit layout that defines a functional element having a critical operating frequency requirement and designing a subcircuit in the critical portion to enable performing a speed push process to increase performance of the subcircuit. The method can also include identifying at least one of a power supply node, a clock supply node, and an interface node at a boundary between the critical portion and a portion of the integrated circuit that is outside of the critical portion. The critical portion can be designed with a power domain that is independent of the portion of the integrated circuit that is outside of the critical portion.
摘要翻译：提供了用于在设计和制造集成电路期间进行选择性推送处理以改善集成电路的选定电路的性能的方法和装置。一种示例性方法包括识别集成电路布局的关键部分，该集成电路布局定义了具有关键工作频率要求的功能元件，并且在关键部分中设计子电路以使能执行速度推动过程以增加子电路的性能。该方法还可以包括在关键部分和在关键部分之外的集成电路的一部分之间的边界处识别供电节点，时钟供应节点和接口节点中的至少一个。关键部分可以被设计成具有独立于在关键部分之外的集成电路的部分的功率域。

3. 发明授权

US06984570B2 Wafer bonding method of forming silicon-on-insulator comprising integrated circuitry 失效
标题翻译：形成绝缘体上硅的晶片接合方法包括集成电路
公开(公告)号：US06984570B2
公开(公告)日：2006-01-10
申请号：US10735355
申请日：2003-12-12
申请人： Zhongze Wang
发明人： Zhongze Wang
IPC分类号： H01L21/30
CPC分类号： H01L29/66772 , H01L21/76256 , H01L29/78603
摘要： A wafer bonding method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing at least a portion of an outer surface of silicon of a device wafer. After the nitridizing, the device wafer is joined with a handle wafer. A method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing an interface of the silicon comprising layer of silicon-on-insulator circuitry with the insulator layer of the silicon-on-insulator circuitry. After the nitridizing, a field effect transistor gate is formed operably proximate the silicon comprising layer. Other methods are disclosed. Integrated circuitry is contemplated regardless of the method of fabrication.
摘要翻译：形成绝缘体上硅包括集成电路的晶片接合方法包括氮化器件晶片的硅的外表面的至少一部分。在氮化之后，器件晶片与处理晶片接合。一种形成绝缘体上硅的方法，包括集成电路包括将包含绝缘体上硅电路的硅层的界面氮化为绝缘体上硅电路的绝缘体层。在氮化之后，场效应晶体管栅极可靠地形成在包含硅的层上。公开了其他方法。无论制造方法如何，都可以考虑集成电路。

4. 发明授权

US06977419B2 MOSFETs including a dielectric plug to suppress short-channel effects 有权
标题翻译： MOSFET包括电介质塞以抑制短沟道效应
公开(公告)号：US06977419B2
公开(公告)日：2005-12-20
申请号：US10931507
申请日：2004-09-01
申请人： Hongmei Wang , Zhongze Wang
发明人： Hongmei Wang , Zhongze Wang
IPC分类号： H01L21/336 , H01L29/06
CPC分类号： H01L29/66628 , H01L29/0649 , H01L29/0653 , H01L29/66636
摘要： The invention provides a technique to fabricate a dielectric plug in a MOSFET. The dielectric plug is fabricated by forming an oxide layer over exposed source and drain regions in the substrate including a gate electrode stack. The formed oxide layer in the source and drain regions are then substantially removed to expose the substrate in the source and drain regions and to leave a portion of the oxide layer under the gate electrode stack to form the dielectric plug and a channel region between the source and drain regions.
摘要翻译：本发明提供了一种制造MOSFET中的电介质塞的技术。通过在包括栅极电极堆叠的衬底中的暴露的源极和漏极区域上形成氧化物层来制造电介质插塞。然后基本上除去源极和漏极区域中形成的氧化物层以暴露源极和漏极区域中的衬底并且将氧化物层的一部分留在栅极电极堆叠下方以形成电介质插塞以及在源极之间的沟道区域和漏区。

5. 发明申请

US20050151198A1 Apparatus for increasing SRAM cell capacitance with metal fill 审中-公开
标题翻译：用于通过金属填充增加SRAM单元电容的装置
公开(公告)号：US20050151198A1
公开(公告)日：2005-07-14
申请号：US11057302
申请日：2005-02-11
申请人： Zhongze Wang , Chih-Chen Cho
发明人： Zhongze Wang , Chih-Chen Cho
IPC分类号： G11C11/412 , H01L21/768 , H01L21/8244 , H01L27/11 , H01L29/76
CPC分类号： G11C11/4125 , G11C11/412 , H01L21/76885 , H01L27/11 , H01L27/1104
摘要： A static random access memory cell with metal fill to form capacitors for increasing the capacitance of the memory cell. More specifically, a semiconductor device including a structure having an upper surface and a contact surface formed at the upper surface of the structure. A dielectric material is formed over the contact surface with a first conductive node and a second conductive node extending beyond the dielectric material. Dielectric spacers are formed around the first and second conductive nodes and conductive elements are formed between the dielectric spacers. The conductive elements and spacers form capacitors without implementing additional masking steps.
摘要翻译：具有金属填充的静态随机存取存储器单元以形成用于增加存储单元的电容的电容器。更具体地说，一种半导体器件，包括具有形成在该结构的上表面上的上表面和接触表面的结构。介电材料在接触表面上与第一导电节点和延伸超出电介质材料的第二导电节点形成。电介质隔板围绕第一和第二导电节点形成，并且导电元件形成在电介质间隔件之间。导电元件和间隔件形成电容器而不实施附加的掩蔽步骤。

6. 发明申请

US20050003598A1 Low dose super deep source/drain implant 有权
标题翻译：低剂量超深源/漏植入
公开(公告)号：US20050003598A1
公开(公告)日：2005-01-06
申请号：US10896711
申请日：2004-07-22
申请人： Zhongze Wang , Inna Patrick
发明人： Zhongze Wang , Inna Patrick
IPC分类号： H01L21/336 , H01L21/8234 , H01L31/0328
CPC分类号： H01L29/6653 , H01L29/6656 , H01L29/6659
摘要： A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
摘要翻译：公开了一种用于通过附加的低剂量超深源极/漏极注入来减少结电容的半导体器件及其制造方法。特别地，在间隔物形成之后进行超深度注入，以显着降低沟道区中的结电容。

7. 发明授权

US06808994B1 Transistor structures and processes for forming same 失效
标题翻译：晶体管结构及其形成工艺
公开(公告)号：US06808994B1
公开(公告)日：2004-10-26
申请号：US10463159
申请日：2003-06-17
申请人： Zhongze Wang
发明人： Zhongze Wang
IPC分类号： H01L21336
CPC分类号： H01L29/6659 , H01L29/0653 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7834 , H01L29/78612
摘要： Source drain on insulator (SDOI) transistors and methods of forming SDOI transistors are described. The SDOI transistors are formed to provide electrical isolation between the body and the channel of the transistor. The electrical isolation comprises either a depletion layer or a p-n junction formed below the SDOI transistor channel region that spans laterally between the SDOI insulators.
摘要翻译：描述了绝缘体源极漏极（SDOI）晶体管和形成SDOI晶体管的方法。形成SDOI晶体管，以在主体和晶体管的通道之间提供电隔离。电隔离包括在SDOI晶体管沟道区域之下形成的耗尽层或p-n结，跨越SDOI绝缘体之间的横向。

8. 发明授权

US06767778B2 Low dose super deep source/drain implant 有权
标题翻译：低剂量超深源/漏植入
公开(公告)号：US06767778B2
公开(公告)日：2004-07-27
申请号：US10230809
申请日：2002-08-29
申请人： Zhongze Wang , Inna V. Patrick
发明人： Zhongze Wang , Inna V. Patrick
IPC分类号： H01L218234
CPC分类号： H01L29/6653 , H01L29/6656 , H01L29/6659
摘要： A semiconductor device for reducing junction capacitance by an additional low dose super deep source/drain implant and a method for its fabrication are disclosed. In particular, the super deep implant is performed after spacer formation to significantly reduce junction capacitance in the channel region.
摘要翻译：公开了一种用于通过附加的低剂量超深源极/漏极注入来减少结电容的半导体器件及其制造方法。特别地，在间隔物形成之后进行超深度注入，以显着降低沟道区中的结电容。

9. 发明授权

US06673715B2 Methods of forming conductive contacts 有权
公开(公告)号：US06673715B2
公开(公告)日：2004-01-06
申请号：US10002335
申请日：2001-10-24
申请人： Jigish D. Trivedi , Zhongze Wang , Chi-Chen Cho
发明人： Jigish D. Trivedi , Zhongze Wang , Chi-Chen Cho
IPC分类号： H01L2144
CPC分类号： H01L21/76888 , H01L21/76897
摘要： Methods of forming conductive contacts are described. According to one implementation, the method includes forming a transistor gate structure over a substrate. The gate structure includes a conductive silicide covered by insulative material. A dielectric layer is formed over the substrate and the gate structure. A contact opening is etched into the dielectric layer adjacent the gate structure. After the etching, the substrate is exposed to oxidizing conditions effective to oxidize any conductive silicide within the contact opening which was exposed during the contact opening etch. After the oxidizing, conductive material is formed within the contact opening. According to another embodiment, after the etching, it is determined whether conductive silicide of the gate structure was exposed during the etching. The substrate is then exposed to oxidizing conditions only if conductive silicide of the gate structure was exposed during the etching.

10. 发明授权

US06599789B1 Method of forming a field effect transistor 失效
标题翻译：形成场效应晶体管的方法
公开(公告)号：US06599789B1
公开(公告)日：2003-07-29
申请号：US09713844
申请日：2000-11-15
申请人： Todd R. Abbott , Zhongze Wang , Jigish D. Trivedi , Chih-Chen Cho
发明人： Todd R. Abbott , Zhongze Wang , Jigish D. Trivedi , Chih-Chen Cho
IPC分类号： H01L2184
CPC分类号： H01L29/66651 , H01L21/26533 , H01L29/0653 , H01L29/41766 , H01L29/66636
摘要： A method of forming a field effect transistor includes forming a channel region within bulk semiconductive material of a semiconductor substrate. Source/drain regions are formed on opposing sides of the channel region. An insulative dielectric region is formed within the bulk semiconductive material proximately beneath at least one of the source/drain regions. A method of forming a field effect transistor includes providing a semiconductor-on-insulator substrate, said substrate comprising a layer of semiconductive material formed over a layer of insulative material. All of a portion of the semiconductive material layer and all of the insulative material layer directly beneath the portion are removed thereby creating a void in the semiconductive material layer and the insulative material layer. Semiconductive channel material is formed within the void. Opposing source/drain regions are provided laterally proximate the channel material. A gate is formed over the channel material. Integrated circuitry includes a bulk semiconductor substrate. A field effect transistor thereon includes a gate, a channel region in the bulk semiconductor substrate, and source/drain regions within the substrate on opposing sides of the channel region. A field isolation region is formed in the bulk semiconductor substrate and laterally adjoins with one of the source/drain regions. The field isolation region includes a portion which extends beneath at least some of the one source/drain region. Other aspects are contemplated.
摘要翻译：形成场效应晶体管的方法包括在半导体衬底的本体半导体材料内形成沟道区。源极/漏极区域形成在沟道区域的相对侧上。绝缘电介质区域在本体半导体材料内形成在源极/漏极区域中的至少一个附近。形成场效应晶体管的方法包括提供绝缘体上半导体衬底，所述衬底包括在绝缘材料层上形成的半导体材料层。半导体材料层的一部分和直接在该部分正下方的所有绝缘材料层被除去，从而在半导体材料层和绝缘材料层中产生空隙。半导体通道材料形成在空隙内。相邻的源极/漏极区域横向靠近通道材料提供。在通道材料上形成一个栅极。集成电路包括体半导体衬底。其中的场效应晶体管包括栅极，体半导体衬底中的沟道区，以及在沟道区的相对侧上的衬底内的源极/漏极区。在体半导体衬底中形成场隔离区域，并且与源极/漏极区域之一横向邻接。场隔离区域包括在一个源极/漏极区域中的至少一些的下方延伸的部分。考虑其他方面。

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