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1. 发明授权

US08198577B2 High dynamic range analog X-ray photon counting 有权
标题翻译：高动态范围模拟X射线光子计数
公开(公告)号：US08198577B2
公开(公告)日：2012-06-12
申请号：US12392637
申请日：2009-02-25
申请人： Bart Dierickx
发明人： Bart Dierickx
IPC分类号： G01J1/44 , H01J40/14 , H03F3/08
CPC分类号： G01T1/17 , G01T1/247
摘要： A pixel for the detection of electromagnetic radiation or impinging high energy particles, in particular for detecting X-ray photons, including a radiation receptor for converting the electromagnetic radiation or impinging high energy particles into a radiation signal, a converter for converting the radiation signal into a pulse train, and an analog accumulator for accumulating the pulses of a pulse train to an analog signal for readout. The analog accumulator is adapted such that the analog signal is non-linearly proportional to the pulse count. Such non-linear analog accumulator has the advantage of an large dynamic range.
摘要翻译：用于检测电磁辐射或冲击高能粒子的像素，特别是用于检测X射线光子，包括用于将电磁辐射转换或将高能粒子撞击到辐射信号中的辐射接收器，用于将辐射信号转换成脉冲串和模拟累加器，用于将脉冲串的脉冲累加到模拟信号用于读出。模拟累加器适于使得模拟信号与脉冲计数成非线性比例。这种非线性模拟累加器具有动态范围大的优点。

2. 发明授权

US10284824B2 Opto-electronic stacked sensor 有权
公开(公告)号：US10284824B2
公开(公告)日：2019-05-07
申请号：US15876399
申请日：2018-01-22
申请人： Caeleste CVBA
发明人： Gaozhan Cai , Bart Dierickx , Bert Luyssaert , Peng Gao
IPC分类号： H04N5/378 , H04N7/22 , G02B6/12 , H01L27/146 , H01L31/024 , H04N5/369
摘要： A stacked image sensor comprises an array of tiles, each comprising a sensor array layer tile comprising a plurality of sensing elements for receiving radiation, one or more electronics layer tiles comprising at least one read-out circuit, connected to at least one subgroup of sensing elements of the sensor array layer tile, a photonics layer tile comprising at least one waveguide and one or more modulators, each connected to the one or more electronics layer tiles. The modulators are adapted for modulating an optical signal travelling within the at least one waveguide. The electronics layer tile comprises at least one driver for driving an optical modulator in the photonics layer tile in accordance with the signals received in each sensing element of the sensor array layer tile. At least one of the layer tiles (sensor array layer, electronics layer and/or photonics layer tiles) is implemented in a single integrated circuit.

3. 发明授权

US09819882B2 Global shutter high dynamic range sensor 有权
公开(公告)号：US09819882B2
公开(公告)日：2017-11-14
申请号：US15173905
申请日：2016-06-06
申请人： Caeleste CVBA
发明人： Bart Dierickx , Jiaqi Zhu , Ajit Kumar Kalgi , Qiang Yao , Koen Liekens , Gaozhan Cai , Bert Luyssaert , Dirk Van Aken , Peng Gao
IPC分类号： H04N5/355 , H04N5/359 , H04N5/3745 , H01L27/146
CPC分类号： H04N5/3559 , H01L27/14609 , H01L27/14654 , H01L27/14656 , H04N5/3592 , H04N5/37452
摘要： The present invention provides a pixel circuit comprising a pinned photodiode, at least one first transfer gate for electrically connecting the pinned photodiode to at least one storage node and at least one further transfer gate. The at least one further gate can connect the at least one storage node with at least one floating diffusion node. At least one merging switch is included for allowing connection between the at least one floating diffusion node with one or more capacitor nodes, which can accept charge that exceeds the maximum storage capacity of the storage node.

4. 发明授权

US09780138B2 Three level transfer gate 有权
公开(公告)号：US09780138B2
公开(公告)日：2017-10-03
申请号：US14554327
申请日：2014-11-26
申请人： Caeleste CVBA
发明人： Benoit Dupont
IPC分类号： H01L27/14 , H04N5/355 , H04N5/3745 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14612 , H04N5/3559 , H04N5/37452
摘要： A method and device of driving a radiation sensor pixel is disclosed. The sensor pixel comprises a sensing element capable of charge generation as a response to impinging radiation, a floating diffusion node, a transfer gate between the sensing element and the floating diffusion node, and a charge storage device connected to the floating diffusion node via a switch. The method comprises biasing the transfer gate to three or more bias voltages OFF, ON and an intermediate bias between OFF and ON. During the period in which the transfer gate is biased to the intermediate bias, if the sensor reaches saturation, the overflown charges may be collected and part of them stored in the charge storage device, for further analysis and merging.

5. 发明授权

US11330207B1 High dynamic range in direct injection 有权
公开(公告)号：US11330207B1
公开(公告)日：2022-05-10
申请号：US17186277
申请日：2021-02-26
申请人： Caeleste CVBA
发明人： Bart Dierickx
IPC分类号： H04N5/355 , H04N5/359 , H04N5/378
摘要： A pixel structure and a method of reading charges generated by a radiation sensing element upon exposure thereof to radiation is presented. The pixel structure comprises at least two capacitors configured for integrating charge from a radiation sensing element, where an overflow transistor sets a predetermined threshold level by a static voltage on its control electrode. This allows charges generated in the radiation sensing element to be integrated in either the first capacitor for a level of charge generated by the radiation sensing element, while the level remains under a predetermined threshold level, or in the at least one further capacitor for a level of charge generated by the radiation sensing element when said level surpasses said predetermined threshold level. At least one merge switch is used for merging the charges of the first capacitor with the charges of the at least one further capacitor.

6. 发明授权

US09699398B2 Pixel with increased charge storage 有权
公开(公告)号：US09699398B2
公开(公告)日：2017-07-04
申请号：US14688020
申请日：2015-04-16
申请人： Caeleste CVBA
发明人： Bart Dierickx , Gaozhan Cai
IPC分类号： H01L27/16 , H04N5/378 , H01L27/146 , H04N5/355 , H04N5/3745
CPC分类号： H04N5/378 , H01L27/14605 , H01L27/1461 , H01L27/14614 , H01L27/14616 , H01L27/14643 , H04N5/3559 , H04N5/37452
摘要： A pixel circuit comprising a photodiode, a floating diffusion, a transfer gate for electrically connecting the photodiode to the floating diffusion, and a charge storage device, wherein the charge storage device comprises an electrode which is at least partly overlaying the photodiode, and which is configured and adapted to be driven so as to influence the total capacitance of the pixel.

7. 发明授权

US11463634B2 Charge domain binning in a MOS pixel 有权
公开(公告)号：US11463634B2
公开(公告)日：2022-10-04
申请号：US16842123
申请日：2020-04-07
申请人： Caeleste CVBA
发明人： Bart Dierickx
IPC分类号： H04N5/347 , H04N5/374 , H04N5/343 , H01L27/146
摘要： An array of pixels for charge domain binning in a CMOS image sensor, to increase the readout sensitivity of such a sensor. The array of pixels comprises at least two pixels in a common substrate. At least one of said pixels is configured or configurable to function as a pixel of a first type with a first, higher, charge collecting capability, for collecting charges generated by radiation impinging on the substrate. At least another one of said pixels is configurable to function as pixel of a second type, with a second, reduced, charge collecting capability, and as a pixel of the first type.

8. 发明申请

US20210314504A1 Charge Domain Binning in a MOS Pixel 有权
公开(公告)号：US20210314504A1
公开(公告)日：2021-10-07
申请号：US16842123
申请日：2020-04-07
申请人： Caeleste CVBA
发明人： Bart DIERICKX
IPC分类号： H04N5/347 , H04N5/374
摘要： An array of pixels for charge domain binning in a CMOS image sensor, to increase the readout sensitivity of such a sensor. The array of pixels comprises at least two pixels in a common substrate. At least one of said pixels is configured or configurable to function as a pixel of a first type with a first, higher, charge collecting capability, for collecting charges generated by radiation impinging on the substrate. At least another one of said pixels is configurable to function as pixel of a second type, with a second, reduced, charge collecting capability, and as a pixel of the first type.

9. 发明授权

US08969780B2 CMOS circuit for sensor with reduced read noise 有权
标题翻译：传感器的CMOS电路具有降低的读取噪声
公开(公告)号：US08969780B2
公开(公告)日：2015-03-03
申请号：US13524542
申请日：2012-06-15
申请人： Benoit Dupont
发明人： Benoit Dupont
IPC分类号： H01L27/00
CPC分类号： H04N5/37457 , H01L27/14641 , H04N5/3743
摘要： A CMOS image sensor having one or more pixels, e.g. in an array, whereby each of the pixels having two or more sub-pixel elements for generating charge according to incident light intensity as well as a common charge sensitive device such as an amplifier coupled to two or more sub-pixel elements of a respective pixel. Charges generated by the two or more sub-pixel elements are added and integrated over respective integration time periods, to provide a signal representing the integrated charges. The circuit can be configured so that the two or more sub-pixel elements have different integration time periods. By combining charges at the charge sensitive device rather than combining outputs of multiple such devices, the amount of read noise can be reduced.
摘要翻译：具有一个或多个像素的CMOS图像传感器。其中每个像素具有用于根据入射光强度产生电荷的两个或更多个子像素元件，以及公共电荷敏感器件，例如耦合到相应像素的两个或更多个子像素元件的放大器。由两个或多个子像素元件产生的电荷在相应的积分时间周期上相加并积分，以提供表示积分电荷的信号。电路可以被配置为使得两个或更多个子像素元件具有不同的积分时间段。通过在电荷敏感器件上组合电荷而不是组合多个这样的器件的输出，可以减少读取噪声的量。

10. 发明授权

US07564022B1 Method and device for time-gating the sensitivity of an imager structure 有权
标题翻译：用于时间选择成像器结构灵敏度的方法和装置
公开(公告)号：US07564022B1
公开(公告)日：2009-07-21
申请号：US12073094
申请日：2008-02-29
申请人： Bart Dierickx
发明人： Bart Dierickx
IPC分类号： H03F3/08 , H01L31/00 , H04N5/335
CPC分类号： H04N5/217 , H01L27/14643 , H03F3/08 , H04N5/3456
摘要： A method for time-gating the sensitivity of an imager structure having a plurality of photodiodes comprises applying an electric field over the photodiodes, the electric field having an amplitude and a polarity so as to reverse bias or slightly forward bias the photodiodes at a bias voltage below 0.5 Volts, and varying the photodiodes between high and low charge collection efficiency or sensitivity by changing the amplitude of the electric field over the photodiodes. A corresponding imager structure is also provided.
摘要翻译：用于对具有多个光电二极管的成像器结构的灵敏度进行时间选择的方法包括在光电二极管上施加电场，电场具有振幅和极性，以便以偏置电压反向偏置或稍微向前偏置光电二极管低于0.5伏，并且通过改变光电二极管上电场的振幅来改变高电荷收集效率或低灵敏度之间的光电二极管。还提供了相应的成像器结构。

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