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1. 发明授权

US07943418B2 Removing undesirable nanotubes during nanotube device fabrication 失效
标题翻译：在纳米管器件制造过程中去除不需要的纳米管
公开(公告)号：US07943418B2
公开(公告)日：2011-05-17
申请号：US11467058
申请日：2006-08-24
申请人： Thomas W. Tombler, Jr.
发明人： Thomas W. Tombler, Jr.
IPC分类号： H01L51/40
CPC分类号： H01L51/057 , B82Y10/00 , B82Y40/00 , H01L51/0048
摘要： Fabricating single-walled carbon nanotube transistor devices includes removing undesirable types of nanotubes. These undesirable types of nanotubes may include nonsemiconducting nanotubes, multiwalled nanotubes, and others. The undesirable nanotubes may be removed electrically using voltage or current, or a combination of these. This approach to removing undesirable nanotubes is sometimes referred to as “burn-off.” The undesirable nanotubes may be removed chemically or using radiation. The undesirable nanotubes of an integrated circuit may be removed in sections or one transistor (or a group of transistors) at a time in order to reduce the electrical current used or prevent damage to the integrated circuit during burn-off.
摘要翻译：制造单壁碳纳米管晶体管器件包括去除不想要的类型的纳米管。这些不期望的类型的纳米管可以包括非半导体纳米管，多壁纳米管等。可以使用电压或电流或这些的组合来电除去不需要的纳米管。这种去除不需要的纳米管的方法有时被称为“燃烧”。不期望的纳米管可以化学去除或使用辐射。集成电路的不期望的纳米管可以在一段时间内去除部分或一个晶体管（或一组晶体管），以便减少所使用的电流或防止在烧坏期间对集成电路的损坏。

2. 发明申请

US20120138902A1 Edge-Contacted Vertical Carbon Nanotube Transistor 审中-公开
标题翻译：边缘垂直碳纳米管晶体管
公开(公告)号：US20120138902A1
公开(公告)日：2012-06-07
申请号：US13153277
申请日：2011-06-03
申请人： Brian Hunt , James Hartman , Michael J. Bronikowski , Eric Wong , Brian Y. Lim
发明人： Brian Hunt , James Hartman , Michael J. Bronikowski , Eric Wong , Brian Y. Lim
IPC分类号： H01L29/78 , H01L29/06
CPC分类号： H01L27/101 , B82Y10/00 , H01L29/0676 , H01L29/66439 , H01L29/775 , H01L51/0048 , H01L51/057
摘要： A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.
摘要翻译：用于基于碳纳米管的场效应晶体管的垂直器件几何形状具有在沟槽中形成的一个或多个碳纳米管。

3. 发明授权

US07776307B2 Concentric gate nanotube transistor devices 失效
标题翻译：同心栅纳米管晶体管器件
公开(公告)号：US07776307B2
公开(公告)日：2010-08-17
申请号：US11465912
申请日：2006-08-21
申请人： Thomas W. Tombler
发明人： Thomas W. Tombler
IPC分类号： H01L21/00
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0002 , H01L51/057 , Y10S438/96 , Y10S438/961
摘要： Single-walled carbon nanotube transistor devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A concentric gate surrounds at least a portion of a nanotube in a pore. A transistor of the invention may be especially suited for power transistor or power amplifier applications.
摘要翻译：单壁碳纳米管晶体管器件和制造这种器件的相关方法包括用于单壁碳纳米管的多孔结构。多孔结构可以是阳极化氧化铝或另一种材料。用于晶体管的源极和漏极的电极设置在单壁碳纳米管器件的相对端。同心门围绕孔中的纳米管的至少一部分。本发明的晶体管可以特别适用于功率晶体管或功率放大器应用。

4. 发明申请

US20110217827A1 Removing Undesirable Nanotubes During Nanotube Device Fabrication 审中-公开
标题翻译：在纳米管装置制造过程中除去不希望的纳米管
公开(公告)号：US20110217827A1
公开(公告)日：2011-09-08
申请号：US13109774
申请日：2011-05-17
申请人： Thomas W. Tombler, JR.
发明人： Thomas W. Tombler, JR.
IPC分类号： H01L21/326 , B82Y40/00
CPC分类号： H01L51/057 , B82Y10/00 , B82Y40/00 , H01L51/0048
摘要： Fabricating single-walled carbon nanotube transistor devices includes removing undesirable types of nanotubes. These undesirable types of nanotubes may include nonsemiconducting nanotubes, multiwalled nanotubes, and others. The undesirable nanotubes may be removed electrically using voltage or current, or a combination of these. This approach to removing undesirable nanotubes is sometimes referred to as “burn-off.” The undesirable nanotubes may be removed chemically or using radiation. The undesirable nanotubes of an integrated circuit may be removed in sections or one transistor (or a group of transistors) at a time in order to reduce the electrical current used or prevent damage to the integrated circuit during burn-off.
摘要翻译：制造单壁碳纳米管晶体管器件包括去除不想要的类型的纳米管。这些不期望的类型的纳米管可以包括非半导体纳米管，多壁纳米管等。可以使用电压或电流或这些的组合来电除去不需要的纳米管。这种去除不需要的纳米管的方法有时被称为“燃烧”。不期望的纳米管可以化学去除或使用辐射。集成电路的不期望的纳米管可以在一段时间内去除部分或一个晶体管（或一组晶体管），以便减少所使用的电流或防止在烧坏期间对集成电路的损坏。

5. 发明授权

US07960713B2 Edge-contacted vertical carbon nanotube transistor 失效
标题翻译：边缘垂直碳纳米管晶体管
公开(公告)号：US07960713B2
公开(公告)日：2011-06-14
申请号：US12346513
申请日：2008-12-30
申请人： Brian Hunt , James Hartman , Michael J. Bronikowski , Eric Wong , Brian Y. Lim
发明人： Brian Hunt , James Hartman , Michael J. Bronikowski , Eric Wong , Brian Y. Lim
IPC分类号： H01L29/78
CPC分类号： H01L27/101 , B82Y10/00 , H01L29/0676 , H01L29/66439 , H01L29/775 , H01L51/0048 , H01L51/057
摘要： A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.
摘要翻译：用于基于碳纳米管的场效应晶体管的垂直器件几何形状具有在沟槽中形成的一个或多个碳纳米管。

6. 发明授权

US07736943B2 Carbon nanotube transistor fabrication 失效
标题翻译：碳纳米管晶体管制造
公开(公告)号：US07736943B2
公开(公告)日：2010-06-15
申请号：US11870872
申请日：2007-10-11
申请人： Thomas W. Tombler, Jr. , Brian Y. Lim
发明人： Thomas W. Tombler, Jr. , Brian Y. Lim
IPC分类号： H01L21/44
CPC分类号： H01L51/0048 , B82Y10/00 , H01L27/283 , H01L51/057 , Y10S257/90 , Y10S977/843 , Y10S977/938 , Y10S977/962
摘要： During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure.
摘要翻译：在制造单壁碳纳米管晶体管器件期间，使用具有多个平行孔的多孔模板来保持单壁碳纳米管。多孔模板或多孔结构可以是阳极氧化的氧化铝或另一种材料。可以在多孔结构的一端或两端设置栅极区域。栅电极可以形成并延伸到多孔结构中。

7. 发明授权

US08168495B1 Carbon nanotube high frequency transistor technology 失效
标题翻译：碳纳米管高频晶体管技术
公开(公告)号：US08168495B1
公开(公告)日：2012-05-01
申请号：US11966693
申请日：2007-12-28
申请人： Brian Y. Lim , Jon W. Lai
发明人： Brian Y. Lim , Jon W. Lai
IPC分类号： H01L29/72
CPC分类号： H01L51/057 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C25D1/006 , C25D1/02 , C25D9/04 , H01L29/0676 , H01L51/0003 , H01L51/0006 , H01L51/0048 , Y10S977/742 , Y10S977/767 , Y10S977/938
摘要： A technique of the invention reduces significantly the distance between the gate and single-walled carbon nanotubes to improve performance and efficiency of a carbon nanotube transistor device. Without using a porous template structure, single-walled carbon nanotubes are grown perpendicularly to a substrate between a base metal layer and a middle mesh layer. The nanotubes are insulated with a thin insulator and then gate regions are formed.
摘要翻译：本发明的技术显着降低了栅极和单壁碳纳米管之间的距离，以提高碳纳米管晶体管器件的性能和效率。在不使用多孔模板结构的情况下，单壁碳纳米管与基底金属层和中间网格层之间的基板垂直生长。纳米管与绝缘体绝缘，然后形成栅极区。

8. 发明申请

US20110136304A1 Techniques to Enhance Selectivity of Electrical Breakdown of Carbon Nanotubes 审中-公开
标题翻译：提高碳纳米管电击穿选择性的技术
公开(公告)号：US20110136304A1
公开(公告)日：2011-06-09
申请号：US12814254
申请日：2010-06-11
申请人： Eric W. Wong , Brian D. Hunt , Rajay Kumar , Chao Li
发明人： Eric W. Wong , Brian D. Hunt , Rajay Kumar , Chao Li
IPC分类号： H01L21/338 , B82Y40/00
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0545 , H01L51/0558 , H01L51/105
摘要： Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than desired. By altering the width and spacing of the slotting, nanotubes have a certain length or greater can be removed. Once the lengths of nanotubes are confined to a certain or expected range, the electrical breakdown approach of removing nanotubes is more effective. In a second technique, a Schottky barrier is created at one electrode (e.g., drain or source). This Schottky barrier helps prevent the inadvertent removal the desirable nanotubes when using the electrical breakdown approach. The first and second techniques can be used individually or in combination with each other.
摘要翻译：技术用于制造碳纳米管器件。这些技术改进了不需要的纳米管的选择性去除，例如金属碳纳米管，同时留下了期望的纳米管，如半导体碳纳米管。在第一种技术中，狭缝图案化用于切割或断裂碳纳米管具有比期望更长的长度。通过改变开槽的宽度和间距，可以去除纳米管的一定长度或更大。一旦纳米管的长度被限制在一定或预期的范围内，去除纳米管的电击穿方法更有效。在第二种技术中，在一个电极（例如漏极或源极）处产生肖特基势垒。这种肖特基势垒有助于防止在使用电击穿方法时无意中去除所需的纳米管。第一和第二技术可以单独使用或者彼此组合使用。

9. 发明授权

US07926440B1 Nanostructure synthesis apparatus and method 失效
标题翻译：纳米结构合成装置及方法
公开(公告)号：US07926440B1
公开(公告)日：2011-04-19
申请号：US11288951
申请日：2005-11-28
申请人： Thomas W. Tombler, Jr. , Jon W. Lai , Brian Y. Lim , Borys Kolasa
发明人： Thomas W. Tombler, Jr. , Jon W. Lai , Brian Y. Lim , Borys Kolasa
IPC分类号： B05C13/00 , D01F9/133 , D01F9/127
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15 , C23C16/4557 , C23C16/46 , C23C16/52
摘要： Apparatus and method for synthesizing nanostructures in a controlled process. An embodiment of the apparatus comprises a stage or substrate holder that is heated, e.g., resistively, and is the primary source of heating for the substrate for nanostructure synthesis. The substrate and substrate heater are enclosed in a chamber, e.g., a metal chamber, which is ordinarily at a lower temperature than are the substrate and substrate heater during synthesis. Some embodiments of the invention are particularly useful for chemical vapor deposition (CVD), low pressure CVD (LPCVD), metal organic CVD (MOCVD), and general vapor deposition techniques. Some embodiments of the present invention allow for in situ characterization and treatment of the substrate and nanostructures.
摘要翻译：在控制过程中合成纳米结构的装置和方法。该装置的一个实施例包括阶段或衬底保持器，其被加热，例如电阻地，并且是衬底用于纳米结构合成的主要加热源。衬底和衬底加热器封闭在例如金属室的室中，其通常在合成期间通常处于比衬底和衬底加热器更低的温度。本发明的一些实施例对于化学气相沉积（CVD），低压CVD（LPCVD），金属有机CVD（MOCVD）和一般气相沉积技术是特别有用的。本发明的一些实施方案允许原位表征和处理底物和纳米结构。

10. 发明申请

US20100270536A1 Concentric Gate Nanotube Transistor Devices 审中-公开
标题翻译：同心门纳米管晶体管器件
公开(公告)号：US20100270536A1
公开(公告)日：2010-10-28
申请号：US12830852
申请日：2010-07-06
申请人： Thomas W. Tombler, JR.
发明人： Thomas W. Tombler, JR.
IPC分类号： H01L29/775
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0002 , H01L51/057 , Y10S438/96 , Y10S438/961
摘要： Single-walled carbon nanotube transistor devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A concentric gate surrounds at least a portion of a nanotube in a pore. A transistor of the invention may be especially suited for power transistor or power amplifier applications.
摘要翻译：单壁碳纳米管晶体管器件和制造这种器件的相关方法包括用于单壁碳纳米管的多孔结构。多孔结构可以是阳极化氧化铝或另一种材料。用于晶体管的源极和漏极的电极设置在单壁碳纳米管器件的相对端。同心门围绕孔中的纳米管的至少一部分。本发明的晶体管可以特别适用于功率晶体管或功率放大器应用。

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