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    • 2. 发明申请
    • Method and Apparatus for Imaging
    • 成像方法和装置
    • US20100149387A1
    • 2010-06-17
    • US12714191
    • 2010-02-26
    • Takashi Tsuda
    • Takashi Tsuda
    • H04N9/64
    • H04N9/045
    • According to one embodiment, a shading correction circuit, which corrects for the influence of ambient light quantity shading, for input image light from three CCD sensors of R, G and B, based on a distance from the center of a screen. A shading correction circuit does not make correction for a maximum correction area which is out of a circle with a distance a from the central part of a screen, and corrects for the influence of ambient light quantity shading for a minimum correction area with a distance b from the central part of a screen, after calculating a square L2 of an address distance of each pixel of a correction object obtained by using a vertical distance and a horizontal distance from an address of the central part of a screen.
    • 根据一个实施例,一种阴影校正电路,其校正来自R,G和B的三个CCD传感器的输入图像光的环境光量阴影的影响,基于距离屏幕中心的距离。 阴影校正电路不对距离屏幕中心距离a的圆圈以外的最大校正区域进行校正,并且将距离b的最小校正区域的环境光量阴影的影响校正 在从屏幕的中心部分的地址利用垂直距离和水平距离计算校正对象的每个像素的地址距离的平方L2之后,从屏幕的中心部分。
    • 8. 发明申请
    • Semiconductor laser device and method of fabricating the same
    • 半导体激光器件及其制造方法
    • US20040032895A1
    • 2004-02-19
    • US10641462
    • 2003-08-14
    • KABUSHIKI KAISHI TOSHIBA
    • Makoto OkadaKoichi Gen-Ei
    • H01S005/00
    • H01S5/4031H01S5/0287H01S5/4087
    • A monolithic two-wavelength semiconductor laser device includes a front end face film 19 on a resonator front end face 18, and a high-reflectivity end face film 22 as a multilayered film on a resonator rear end face 21. The front end face film 19 is formed using a low-refractive-index material, and the film thickness is so set that the reflectivity is 20%. The high-reflectivity end face film 22 is formed by alternately stacking thin films of low- and high-refractive-index materials, and the film thickness is so set that the reflectivity is 80%. The film thickness of each of these two end face films is calculated by an optical length dnull(1/4nullj)nullnullm by using a mean value nullmnull(null1nullnull2)/2 of the oscillation wavelengths of the two semiconductor laser diodes. This makes it possible to obtain an end face film having a desired reflectivity and capable of being formed at once, and to fabricate a two-wavelength semiconductor laser device having high reliability, meeting the required performance, and also having high productivity.
    • 单片双波长半导体激光装置包括谐振器前端面18上的前端面膜19和谐振器后端面21上作为多层膜的高反射率端面膜22.前端面膜19 使用低折射率材料形成,并且膜厚度被设定为反射率为20%。 高反射率端面膜22是通过交替层叠低折射率材料和高折射率材料的薄膜形成的,膜厚设定为反射率为80%。 通过使用两个半导体激光器的振荡波长的平均值lambdam =(λ1+λ2)/ 2,通过光学长度d =(1/4 + j)×lambdam来计算这两个端面膜中的每一个的膜厚度 二极管。 这使得可以获得具有期望的反射率并能够立即形成的端面膜,并且制造具有高可靠性,满足所需性能并且还具有高生产率的双波长半导体激光器件。
    • 9. 发明授权
    • Communication control apparatus for providing management and call
control of mobile stations in radio communication system
    • 用于在无线电通信系统中提供移动台的管理和呼叫控制的通信控制装置
    • US6108563A
    • 2000-08-22
    • US821474
    • 1997-03-21
    • Shinichi Shishino
    • Shinichi Shishino
    • H04W68/00H04Q7/30
    • H04W68/00
    • A communication setting pattern indicating whether or not the mobile stations located in the radio zone are permitted to communicate is set for each radio zone in a communication setting memory. In a case where a call request related to a mobile station located in the service area has been made, a CPU carries out the call process corresponding to the call request only when the communication pattern permits communication in the radio zone where the mobile station related to the call request is located. When the communication setting pattern stored in the communication setting memory has been changed, the CPU disconnects the call related to the mobile station in a case where a busy mobile station is located in the radio zone where the changed communication permit/inhibit information inhibits communication.
    • 针对通信设定存储器中的每个无线电区域设置指示位于无线电区域中的移动台是否被允许通信的通信设置模式。 在与位于服务区域的移动台有关的呼叫请求的情况下,CPU仅在通信模式允许移动站相关的无线电区域中进行通信时才执行与呼叫请求对应的呼叫处理 呼叫请求位于。 当存储在通信设置存储器中的通信设置模式已经改变时,在繁忙的移动台位于改变的通信允许/禁止信息禁止通信的无线电区域的情况下,CPU断开与移动台有关的呼叫。
    • 10. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US5136542A
    • 1992-08-04
    • US599637
    • 1990-10-18
    • Sumako AbeMakoto Segawa
    • Sumako AbeMakoto Segawa
    • G11C11/413G11C5/14G11C7/10G11C11/417H03K19/0175
    • G11C7/1051G11C5/14
    • A semiconductor memory device having an internal circuit which is powered from a first power source terminal and outputs an output drive signal corresponding to a stored data in a selected memory cell of a memory cell array; and output buffer unit which is powered from a second power source terminal and operates in such a manner that a gate is closed or opened in accordance with whether the output drive signal is low level or high level, and an output signal of low level or high level corresponding to closed gate or opened gate is outputted via an external output terminal to the external; and a level change suppressing circuit for suppressing a level change of the output drive signal as viewed from the output buffer, by connecting the output terminal of the internal circuit to one of the second power source terminal and the external output terminal, when the potential at the second power source terminal changes relatively with respect to the potential at the first power source terminal as the output signal at the external output terminal changes its level between low level and high level.
    • 一种半导体存储器件,其具有由第一电源端子供电的内部电路,并将对应于存储的数据的输出驱动信号输出到存储单元阵列的所选择的存储单元中; 以及输出缓冲器单元,其由第二电源端子供电,并且以根据输出驱动信号是低电平还是高电平关闭或打开门的方式操作,以及低电平或高电平的输出信号 对应于闭门或开门的电平经由外部输出端输出到外部; 以及电平变化抑制电路,用于通过将内部电路的输出端子连接到第二电源端子和外部输出端子之一来抑制从输出缓冲器观察的输出驱动信号的电平变化,当电位 当外部输出端子的输出信号在低电平和高电平之间变化时,第二电源端子相对于第一电源端子的电位相对变化。