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    • 2. 发明申请
    • INTEGRATED JUNCTION INSULATION FOR PHOTOVOLTAIC MODULE
    • 光电模块的集成连接绝缘
    • US20140182651A1
    • 2014-07-03
    • US13797284
    • 2013-03-12
    • Michael RogersonJing Tian
    • Michael RogersonJing Tian
    • H01L31/048
    • H02S40/34H01L31/0201H01L31/02013H01L31/048Y02E10/50
    • The disclosure relates to apparatus and methods of photovoltaic or solar module design and fabrication. A photovoltaic module includes one or more photovoltaic (PV) cells arranged in an array and sandwiched between a support and a top layer, one or more junction insulation structures laminated and integrated within the PC module between the support and the top layer. The one or more junction insulation structures are configured to protect at least one electrical connections formed between an output wire and a busbar electrically connected to at least one of the one or more PC cells. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
    • 本公开涉及光伏或太阳能模块设计和制造的装置和方法。 光伏模块包括以阵列布置并夹在支撑件和顶层之间的一个或多个光伏(PV)单元,一个或多个结合绝缘结构,其在PC模块之间层压并集成在支撑件和顶层之间。 一个或多个接合绝缘结构被配置为保护形成在电连接到一个或多个PC单元中的至少一个PC单元的输出线和母线之间的至少一个电连接。 要强调的是,该摘要被提供以符合要求抽象的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。
    • 5. 发明授权
    • Bandgap grading in thin-film devices via solid group IIIA particles
    • 通过固体IIIA颗粒在薄膜器件中带隙分级
    • US08372685B2
    • 2013-02-12
    • US11762060
    • 2007-06-12
    • Matthew R. RobinsonChris EberspacherJeroen K. J. Van Duren
    • Matthew R. RobinsonChris EberspacherJeroen K. J. Van Duren
    • H01L22/00
    • H01L31/0322Y02E10/541
    • Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first.
    • 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在一个实施例中,提供了使用这种颗粒在薄膜装置中进行带隙分级的方法。 该方法可以包括提供一种带隙分级材料,其包括合金,其具有:a)IIIA材料和b)基于IA的材料,其中该合金具有比元素中IIIA材料的熔融温度更高的熔融温度 形成。 可以将前体材料沉积在基底上以形成前体层。 包含IB,IIIA和/或VIA基颗粒的前体材料。 合金的带隙分级材料可以在沉积前体材料之后沉积。 在前体层开始烧结之后,分级材料中的合金可能会发生反应,从而在化合物膜的形成于部分首先烧结的部分之上维持更高浓度的IIIA材料。
    • 8. 发明授权
    • Thin-film devices formed from solid particles
    • 由固体颗粒形成的薄膜器件
    • US08071419B2
    • 2011-12-06
    • US12304683
    • 2007-06-12
    • Matthew R. RobinsonChris EberspacherJeroen K. J. Van Duren
    • Matthew R. RobinsonChris EberspacherJeroen K. J. Van Duren
    • H01L21/00
    • H01L31/0322Y02E10/541
    • Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
    • 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中,描述了一种方法,其包括提供包含a)基于IIIA族的材料和b)至少一种其它材料的合金的第一材料。 可以以足够的量包含材料,使得在室温和高于室温的沉积或预沉积温度之间的温度范围内,第一材料中不存在液相,其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料,其包括:a)第一材料的颗粒,和b)含有至少一种元素的颗粒,所述元素包括:IB,IIIA族,VIA族元素,含有任何上述元素的合金,或其组合。 上述温度范围可以在约20℃至约200℃之间。应当理解,该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。
    • 9. 发明授权
    • Solution-based fabrication of photovoltaic cell
    • 光伏电池基于解决方案的制造
    • US08038909B2
    • 2011-10-18
    • US11933338
    • 2007-10-31
    • Dong YuJacqueline FidanzaBrian M. Sager
    • Dong YuJacqueline FidanzaBrian M. Sager
    • H01B1/10H01B1/12H01B1/14H01B1/20H01L31/20
    • H01L31/06B82Y5/00B82Y10/00B82Y30/00C23C18/1204C23C18/1266C23C18/1295H01L31/0322H01L31/0749H01L31/18Y02E10/541Y02P70/521
    • An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
    • 公开了一种用于形成CIGS光伏电池有源层的墨水以及用于制造墨水的方法,制备活性层的方法和由活性层制成的太阳能电池。 油墨含有IB,IIIA和(任选地)VIA组分的纳米颗粒的混合物。 颗粒的直径在约1nm至约500nm之间的所需粒度范围,其中大部分颗粒的质量包括尺寸不超过平均粒度的约40%或以下的颗粒,或 如果平均粒度小于约5纳米,高于或低于平均粒度的不超过约2纳米。 使用这种墨水避免了在构建光伏电池期间将材料暴露于H 2 Se气体的需要,并且允许在膜退火期间更均匀的熔融,更均匀的纳米颗粒的混合,并且允许形成更高质量的吸收膜。