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1. 发明授权

US11361949B2 Substrate placing table, plasma processing apparatus provided with same, and plasma processing method 有权
公开(公告)号：US11361949B2
公开(公告)日：2022-06-14
申请号：US16613975
申请日：2019-01-09
申请人： SPP TECHNOLOGIES CO., LTD.
发明人： Yasuyuki Hayashi
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67 , H01L21/687
摘要： Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein. A focus ring (64) disposed outside the upper disk part (61a) in a radial direction of the upper disk part (61a) and covering an upper surface of the lower disk part (61b), an upper annular cover (65) for thermal insulation enclosing the lower disk part (61b) and at least a part of the cooling jacket (62), and a lower annular cover (66) for thermal insulation clamping the cooling jacket (62) between itself and the upper annular cover (65) are made of ceramics.

2. 发明申请

US20220012868A1 MAINTENANCE SUPPORT SYSTEM, MAINTENANCE SUPPORT METHOD, PROGRAM, METHOD FOR GENERATING PROCESSED IMAGE, AND PROCESSED IMAGE 有权
公开(公告)号：US20220012868A1
公开(公告)日：2022-01-13
申请号：US17053829
申请日：2020-03-19
申请人： SPP TECHNOLOGIES CO., LTD.
发明人： Takashi HABE , Norihiro TSUJIOKA
IPC分类号： G06T7/00 , G02B27/01
摘要： A maintenance support system prevents leakage of confidential information by excluding a maintenance target while imposing few restrictions on imaging conditions. A maintenance support system 100 includes a wearable terminal 1 including an imaging device 12, a first identifying device 31 configured to identify a first three-dimensional area TA including a maintenance target T with reference to a predetermined reference point M, and a second identifying device 32 configured to identify a mask pixel area excluding an effective pixel area corresponding to the first three-dimensional area for a captured image acquired by the imaging device in a post-movement state in which the wearable terminal has moved. A processed-image generating device 33 is configured to generate a processed image in which the mask pixel area is made invisible and a communication device 34 is configured to transmit the processed image to a support terminal 2.

3. 发明申请

US20150170883A1 Plasma Etching Device 审中-公开
标题翻译：等离子体蚀刻装置
公开(公告)号：US20150170883A1
公开(公告)日：2015-06-18
申请号：US14418041
申请日：2013-09-25
申请人： SPP Technologies Co., LTD.
发明人： Takashi Yamamoto , Kazuya Ota , Masahiro Sasakura , Yasuyuki Hayashi
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/32623 , H01J37/321 , H01J37/3211 , H01J37/32357 , H01J37/32458 , H01J37/32568 , H01J37/32633 , H01J37/32724 , H01J2237/0656 , H01J2237/15 , H01J2237/334 , H01L21/3065 , H01L21/67069 , H05H1/46 , H05H2001/4667
摘要： The present invention relates to a substrate etching device capable of improving uniformity of in-plane density of generated plasma to uniformly etch an entire substrate surface. A plasma etching device 1 includes a chamber 2 having a plasma generation space 3 and a processing space 4 set therein, a coil 30 disposed outside an upper body portion 6, a platen 40 disposed in the processing space 4 for placing a substrate K thereon, an etching gas supply mechanism 25 supplying an etching gas into the plasma generation space 3, a coil power supply mechanism 35 supplying RF power to the coil 30, and a platen power supply mechanism 45 supplying RF power to the platen 40. Further, a tapered plasma density adjusting member 20 is fixed on an inner wall of the chamber 2 between the plasma generation space 3 and the platen 40 and, in an upper portion of the chamber 2, a cylindrical core member 10 having a tapered portion formed thereon having a diameter decreasing toward a lower end surface thereof is arranged to extend downward.
摘要翻译：本发明涉及能够提高产生的等离子体的面内密度的均匀性以均匀地蚀刻整个基板表面的基板蚀刻装置。等离子体蚀刻装置1包括具有等离子体产生空间3和设置在其中的处理空间4的室2，设置在上部主体部分6外侧的线圈30，设置在处理空间4中以将基板K放置在其上的压板40，向等离子体产生空间3供给蚀刻气体的蚀刻气体供给机构25，向线圈30供给RF电力的线圈供电机构35以及向压板40供给RF电力的台板供电机构45.此外，等离子体密度调节构件20固定在等离子体产生空间3和压板40之间的腔室2的内壁上，并且在腔室2的上部中具有形成在其上的锥形部分的圆柱形芯构件10，朝向其下端面向下方延伸设置为向下延伸。

4. 发明授权

US08852388B2 Plasma processor 有权
标题翻译：等离子处理器
公开(公告)号：US08852388B2
公开(公告)日：2014-10-07
申请号：US12593526
申请日：2008-02-26
申请人： Toshihiro Hayami
发明人： Toshihiro Hayami
IPC分类号： H01J37/32 , H01L21/3065 , C23C16/44
CPC分类号： H01J37/32935 , C23C16/4411 , H01J37/32082 , H01J37/32522 , H01J37/32623 , H01L21/3065 , H01L21/30655
摘要： The present invention relates to a plasma processor capable of regulating the temperature of the inner surface of the processing chamber efficiently and with excellent response, with a low-cost configuration. A plasma processor 1 includes a processing chamber 11, a processing gas supply device 20, an exhaust device 40, coils 23, a high-frequency power supply unit 24, a heater 26, a cooling device 30, and a control device 50. The cooling device 30 is configured with a cooling member 32 facing the processing chamber 11 at a distance therefrom, a cooling fluid supply section 31 for supplying cooling fluid into a cooling passage 32a of the cooling member 32 and circulates it, and annular seal members 35 and 36 provided between the cooling member 32 and the processing chamber 11. The exhaust device 40 reduces the pressure in a space S surrounded by the seal members 35 and 36, the cooling member 32, and the processing chamber 11. The control device 50 controls the exhaust device 40 to reduce the pressure in the space S when high-frequency power is not applied to the coils 23, and to set the pressure in the space S at atmospheric pressure when high-frequency power is applied to the coils 23.
摘要翻译：本发明涉及一种等离子体处理器，其能够以低成本的结构有效地且以良好的响应来调节处理室的内表面的温度。等离子体处理器1包括处理室11，处理气体供应装置20，排气装置40，线圈23，高频电源单元24，加热器26，冷却装置30和控制装置50。冷却装置30配置有与处理室11相距一定距离的冷却部件32，冷却流体供给部31，用于将冷却流体供给到冷却部件32的冷却通路32a并使其循环，并且环状密封部件35和 36设置在冷却构件32和处理室11之间。排气装置40减小由密封构件35和36，冷却构件32和处理室11包围的空间S中的压力。控制装置50控制排气装置40，当高频电力未施加到线圈23时，减小空间S中的压力，并且当向线圈23施加高频电力时将空间S中的压力设定为大气压。

5. 发明授权

US08771461B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08771461B2
公开(公告)日：2014-07-08
申请号：US12922520
申请日：2008-12-03
申请人： Toshihiro Hayami , Yasuyuki Hayashi
发明人： Toshihiro Hayami , Yasuyuki Hayashi
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32458 , H01J37/32623 , H01L21/6719 , H01L21/68742
摘要： The present invention relates to a plasma processing apparatus in which it is possible to efficiently perform maintenance of a processing chamber. A plasma processing apparatus has a processing chamber including a lower chamber and an upper chamber, a platen on which a silicon substrate is placed, a processing gas supply device, coils, high-frequency power supply unit for coil, an elevating board with a through hole provided to be vertically movable, an elevating mechanism for supporting and moving the elevating board, and a fixing mechanism for fixing the upper chamber. The fixing member is configured from a fixing board, first fixing bolts for connecting and fixing a top plate to the elevating board using the fixing board, second fixing bolts for fixing a flange portion of a holding member to an annular plate, and third fixing bolts for fixing the annular plate to a sidewall of the lower chamber.
摘要翻译：等离子体处理装置技术领域本发明涉及能够有效地进行处理室的维护的等离子体处理装置。一种等离子体处理装置具有包括下室和上室的处理室，放置有硅基板的压板，处理气体供给装置，线圈，线圈用高频电源单元，具有通孔的升降板提供为可垂直移动的孔，用于支撑和移动升降板的升降机构，以及用于固定上室的固定机构。固定构件由固定板构成，第一固定螺栓用于使用固定板将顶板连接并固定到升降板，用于将保持构件的凸缘部固定到环形板的第二固定螺栓和第三固定螺栓用于将环形板固定到下室的侧壁。

6. 发明申请

US20120258604A1 Deposition Method 有权
标题翻译：沉积法
公开(公告)号：US20120258604A1
公开(公告)日：2012-10-11
申请号：US13517193
申请日：2010-11-25
申请人： Masayasu Hatashita , Akimitsu Oishi , Shoichi Murakami
发明人： Masayasu Hatashita , Akimitsu Oishi , Shoichi Murakami
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/45523 , H01L21/022 , H01L21/02274 , H01L27/14618 , H01L27/14665 , H01L27/14683 , H01L2224/13
摘要： A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.
摘要翻译：可以使用获得小膜厚比的沉积气体和获得大的膜厚比的沉积气体来形成具有预定膜厚比的氧化膜的沉积方法。当在衬底的表面上形成比在孔的底表面上具有更大膜厚的氧化膜时，使得形成在衬底的表面上的氧化膜与形成在底表面上的氧化膜的膜厚比的孔变成规定的比例，由包含四乙氧基硅烷和氧气的混合气体产生等离子体，形成氧化膜，然后由包含硅烷和一氧化二氮的气体混合物产生等离子体。

7. 发明授权

US11195697B2 Plasma control apparatus 有权
公开(公告)号：US11195697B2
公开(公告)日：2021-12-07
申请号：US15760298
申请日：2017-01-20
申请人： SPP Technologies Co., Ltd.
发明人： Toshihiro Hayami , Ryosuke Fujii
IPC分类号： H01J37/32 , H01L21/3065 , H05H1/46 , H01L21/67 , H03H7/38
摘要： A plasma control apparatus includes a power source unit, a resonance producing unit, and a voltmeter. The resonance producing unit includes an LC circuit formed by a coil L1 and a capacitor C1 connected to each other, and a sensor S2 configured to detect a phase difference between current flowing in and voltage applied to the LC circuit, and the capacitor C1 of the LC circuit has a capacitance larger than an expected capacitance of the plasma P. The power source unit 1 configured to control the magnitude of radio-frequency power to be supplied in such a manner as to bring the voltage measured with the voltmeter 5 close to a set voltage as a target, and controls the frequency of the radio-frequency power to be supplied in such a manner as to minimize the phase difference detected with the sensor S2.

8. 发明申请

US20160153091A1 Heating Device and Plasma Processing Apparatus Provided Therewith 审中-公开
标题翻译：加热装置及等离子体处理装置
公开(公告)号：US20160153091A1
公开(公告)日：2016-06-02
申请号：US14900535
申请日：2014-03-31
申请人： SPP TECHNOLOGIES CO., LTD.
发明人： Toshihiro Hayami , Ryosuke Fujii
IPC分类号： C23C16/56
CPC分类号： C23C16/56 , H01L21/67103 , H01L21/68742 , H05B3/68
摘要： A heating device capable of efficiently heating an object to be heated with a small heating element and a plasma processing apparatus provided with the heating device are provided. A plasma processing apparatus 1 includes a processing chamber 2 having a plasma generating space 3a defined in an upper portion thereof and a processing space 4a defined in a lower portion thereof, a platen 9 disposed in the processing space 4a for placing a substrate K thereon, a processing gas supply unit 7 supplying a processing gas into the plasma generating space 3a, a plasma generating unit 5 generating plasma from the processing gas supplied into the plasma generating space 3a by RF power, a plasma-generation RF power supply 6 supplying RF power to the plasma generating unit 5, and a heating device 13. The heating device 13 is composed of a heating element 14 including a conductor having a product ρ·μ [Ω·H] of its electrical resistivity ρ [Ω·m] and its magnetic permeability μ [H/m] equal to or greater than 8.0×10−13, and a heating RF power supply 16 supplying RF power to the heating element 14.
摘要翻译：提供了一种能够用小型加热元件有效地加热待加热物体的加热装置和设置有加热装置的等离子体处理装置。等离子体处理装置1包括具有限定在其上部的等离子体产生空间3a和限定在其下部的处理空间4a的处理室2，设置在处理空间4a中的用于将基板K放置在其上的压板9，将处理气体供给到等离子体产生空间3a中的处理气体供给单元7，通过RF功率从供给到等离子体生成空间3a的处理气体产生等离子体的等离子体生成单元5，提供RF功率的等离子体生成用RF电源6 等离子体发生单元5和加热装置13.加热装置13由包括导电体的加热元件14组成，该导体具有其电阻率＆rgr;μ[＆OHgr·H] [＆OHgr;·m]，其磁导率μ[H / m]等于或大于8.0×10-13，以及向加热元件14提供RF功率的加热RF电源16。

9. 发明申请

US20160118225A1 Plasma Processing Apparatus and Opening and Closing Mechanism used therein 审中-公开
标题翻译：等离子体处理装置及其中使用的开闭机构
公开(公告)号：US20160118225A1
公开(公告)日：2016-04-28
申请号：US14894922
申请日：2014-03-31
申请人： SPP TECHNOLOGIES CO., LTD.
发明人： Toshihiro Hayami
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32834
摘要： A plasma etching apparatus 1 includes a processing chamber 2 having a plasma generating portion 3, a processing portion 4, an exhaust portion 5, and a manifold portion 6 defined inside, and an exhaust mechanism 30 for exhausting gas in the processing chamber 2, the exhaust mechanism 30 is composed of a vacuum pump 31 having an intake port connected to an opening 8, a valve body 32 inserted through an opening 9, and a moving mechanism 34 for moving the valve body 32 in upward and downward directions, and the intake port of the vacuum pump 31 is connected to the opening 8 which is formed in a third chamber 2c forming a part of the processing chamber 2.
摘要翻译：等离子体蚀刻装置1包括具有等离子体产生部分3，处理部分4，排气部分5和限定在其内部的歧管部分6的处理室2和用于排出处理室2中的气体的排气机构30，排气机构30由具有连接到开口8的进气口的真空泵31，通过开口9插入的阀体32和用于使阀体32沿上下方向移动的移动机构34和进气口真空泵31的端口连接到形成在形成处理室2的一部分的第三室2c中的开口8。

10. 发明申请

US20140220711A1 APPARATUS, METHOD AND PROGRAM FOR MANUFACTURING NITRIDE FILM 有权
标题翻译：装置，方法和程序制造氮化物膜
公开(公告)号：US20140220711A1
公开(公告)日：2014-08-07
申请号：US14238289
申请日：2012-05-22
申请人： Shoichi Murakami , Masayasu Hatashita
发明人： Shoichi Murakami , Masayasu Hatashita
IPC分类号： H01L21/02 , H01L21/66
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/509 , H01L21/0214 , H01L21/02274 , H01L22/12
摘要： A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
摘要翻译：氮化膜制造装置通过等离子体CVD技术在设置在室中的基板上形成氮化膜。具体而言，氮化膜制造装置包括：控制器，用于计算用于施加具有较高频率的第一高频电力的第一周期和用于施加具有相对较低频率的第二高频功率的第二周期，以获得期望的压缩应力或氮化物膜的拉伸应力，基于氮化物膜的折射率的分布和/或氮化物膜的沉积速率的分布，该分布落在预定数值范围内并且使用第一高频功率获得和/或独立地施加的用于形成氮化物膜的第二高频电力。

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