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1. 发明申请

US20190257958A1 DENSE HIGH-SPEED SCINTILLATOR MATERIAL OF LOW AFTERGLOW 审中-公开
公开(公告)号：US20190257958A1
公开(公告)日：2019-08-22
申请号：US16400195
申请日：2019-05-01
申请人： SAINT-GOBAIN CRISTAUX ET DETECTEURS
发明人： Bernard FERRAND , Bruno VIANA , Ludivine PIDOL , Pieter DORENBOS
IPC分类号： G01T1/202 , G21K4/00 , C09K11/74 , C09K11/77
摘要： The invention relates to an inorganic scintillator material of formula Lu(2-y)Yy-z-x)CexMzSi(1-v)M′vO5, in which: M represents a divalent alkaline earth metal and M′ represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1. In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.

2. 发明授权

US09599727B2 Fabrication of a scintillator material of elpasolite type 有权
公开(公告)号：US09599727B2
公开(公告)日：2017-03-21
申请号：US14879650
申请日：2015-10-09
申请人： Saint-Gobain Cristaux Et Detecteurs
发明人： Vladimir Ouspenski , Samuel Blahuta , Raphael Huchet , Julien Lejay
IPC分类号： H05B33/00 , G01T1/202 , C30B11/00 , C30B15/00 , C30B29/12 , C09K11/77 , C30B11/02 , C30B11/04 , C30B15/04
CPC分类号： G01T1/2023 , C09K11/7766 , C09K11/7773 , C30B11/00 , C30B11/02 , C30B11/04 , C30B15/00 , C30B15/04 , C30B29/12
摘要： A process for fabricating a crystalline scintillator material with an elpasolite structure that has a theoretical composition of A2BC(1-y)MyX(6-y) can include conducting crystallization by cooling from a melt bath including r moles of A and s moles of B. A is chosen from Cs, Rb, K, and Na. B is chosen from Li, K, and Na. C is chosen from athe rare earth elements, Al, and Ga. M is chosen from the alkaline earth elements. X is chosen from F, Cl, Br, and I, and y represents the atomic fraction of substitution of C by M and is in the range extending from 0 to 0.05. The melt bath can be in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. The crystals formed therefrom can have improved scintillation properties.

3. 发明授权

US08519339B2 Rare-earth halide scintillator coated with a light absorber or light reflector 有权
标题翻译：涂有光吸收剂或光反射体的稀土卤化物闪烁体
公开(公告)号：US08519339B2
公开(公告)日：2013-08-27
申请号：US12833905
申请日：2010-07-09
申请人： Jeremy Flamanc , Peter R. Menge
发明人： Jeremy Flamanc , Peter R. Menge
IPC分类号： G01T1/20
CPC分类号： C09K11/7704 , C08K3/013 , C09D7/61 , C09K11/02 , G01T1/2002 , Y10T428/263 , Y10T428/264 , Y10T428/265 , Y10T428/269 , Y10T428/31529 , Y10T428/31663
摘要： A scintillator material comprises a rare-earth halide coated with a layer comprising a resin and a pigment. In an embodiment, the scintillator material is used in an ionizing-radiation detector, and in particular embodiment, a gamma camera. The layer can adhere well and act as an absorbent or reflector depending on the color of the pigment.
摘要翻译：闪烁体材料包括涂覆有包含树脂和颜料的层的稀土卤化物。在一个实施例中，闪烁体材料用于电离辐射检测器，特别是伽马照相机中。该层可以很好地粘附并且作为吸收剂或反射体，这取决于颜料的颜色。

4. 发明授权

US08222153B2 Textured single crystal 有权
标题翻译：纹理单晶
公开(公告)号：US08222153B2
公开(公告)日：2012-07-17
申请号：US13149652
申请日：2011-05-31
申请人： Fabien Lienhart , Guillaume Lecamp , François-Julien Vermersch
发明人： Fabien Lienhart , Guillaume Lecamp , François-Julien Vermersch
IPC分类号： H01L21/302
CPC分类号： C30B33/08 , C30B25/186 , C30B29/20 , C30B29/403
摘要： A method for fabricating a textured single crystal including depositing pads made of metal on a surface of a single crystal. A protective layer is deposited on the pads and on the single crystal between the pads; and etching the surface with a first compound that etches the metal more rapidly than the protective layer is carried out. Processing continues with etching the surface with a second compound that etches the single crystal more rapidly than the protective layer; and etching the surface with a third compound that etches the protective layer more rapidly than the single crystal. The textured substrate may be used for the epitaxial growth of GaN, AlN or III-N compounds (i.e. a nitride of a metal the positive ion of which carries a +3 positive charge) in the context of the fabrication of LEDs, electronic components or solar cells.
摘要翻译：一种用于制造包含在单晶表面上由金属制成的沉积垫的纹理单晶的方法。保护层沉积在焊盘和衬垫之间的单晶上; 并且利用蚀刻金属比保护层更快的第一化合物来蚀刻表面。处理继续蚀刻具有比保护层更快速地蚀刻单晶的第二化合物的表面; 并用比单晶蚀刻保护层更快的第三种化合物蚀刻表面。纹理化衬底可以用于在制造LED，电子元件或其中的GaN，AlN或III-N化合物（即其正离子携带+3正电荷的金属的氮化物）的外延生长太阳能电池。

5. 发明授权

US07767975B2 Ionizing radiation detector 有权
标题翻译：电离辐射探测器
公开(公告)号：US07767975B2
公开(公告)日：2010-08-03
申请号：US12037695
申请日：2008-02-26
申请人： Jérémy Flamanc , Guillaume Gautier
发明人： Jérémy Flamanc , Guillaume Gautier
IPC分类号： G01T1/20
CPC分类号： G01T1/2018 , G01T1/202
摘要： An ionizing radiation detector comprising a housing includes a scintillator material, an avalanche photodiode in contact with the scintillator material via optical coupling, and a preamplifier.
摘要翻译：包括壳体的电离辐射检测器包括闪烁体材料，通过光耦合器与闪烁体材料接触的雪崩光电二极管和前置放大器。

6. 发明申请

US20090140153A1 Ionizing Radiation Detector 有权
标题翻译：电离辐射检测器
公开(公告)号：US20090140153A1
公开(公告)日：2009-06-04
申请号：US12037695
申请日：2008-02-26
申请人： Jeremy Flamanc , Guillaume Gautier
发明人： Jeremy Flamanc , Guillaume Gautier
IPC分类号： G01T1/20 , G01T1/00
CPC分类号： G01T1/2018 , G01T1/202
摘要： The invention concerns an ionizing radiation detector comprising a housing containing: a scintillator material, an avalanche photodiode in contact with the scintillator material via optical coupling, a preamplifier. This detector is compact, portable, and very robust. It detects X-rays or gamma rays with excellent resolution, which can be less than 3% at 662 keV.
摘要翻译：本发明涉及电离辐射检测器，其包括壳体，其包含：闪烁体材料，通过光耦合与闪烁体材料接触的雪崩光电二极管，前置放大器。该检测器结构紧凑，便于携带，非常坚固。它可以检测出高分辨率的X射线或γ射线，在662keV下可以小于3％。

7. 发明授权

US10890670B2 Dense high-speed scintillator material of low afterglow 有权
公开(公告)号：US10890670B2
公开(公告)日：2021-01-12
申请号：US16400195
申请日：2019-05-01
申请人： SAINT-GOBAIN CRISTAUX ET DETECTEURS
发明人： Bernard Ferrand , Bruno Viana , Ludivine Pidol , Pieter Dorenbos
IPC分类号： C09K11/77 , G01T1/202 , C09K11/74 , G21K4/00 , A61B6/00
摘要： The invention relates to an inorganic scintillator material of formula Lu(2−y)Y(y−z−x)CexMzSi(1−v)M′vO5, in which: M represents a divalent alkaline earth metal and M′ represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1. In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.

8. 发明授权

US09880294B2 Rare-earth halide crystal scintillator with polished sensitive face 有权
公开(公告)号：US09880294B2
公开(公告)日：2018-01-30
申请号：US14958748
申请日：2015-12-03
申请人： Saint-Gobain Cristaux Et Detecteurs
发明人： Guillaume Gautier , Dominique Richaud , Patrick Champeaux
IPC分类号： G01T1/20 , G01T1/202
CPC分类号： G01T1/202
摘要： A single-crystal scintillator material can include at least 50 wt % of rare-earth halide and comprising a polished first face. This material is integrated into an ionizing-radiation detector comprising a photoreceiver, the photoreceiver being optically coupled to the material via a face other than the polished first face. The material provides a good energy resolution and a high light intensity. The polishing may be carried out whatever the crystal orientation of the crystal. Loss of material due to this orientation is therefore prevented.

9. 发明授权

US09130120B2 Group III-V substrate material with thin buffer layer and methods of making 有权
标题翻译：具有薄缓冲层的III-V族基体材料和制备方法
公开(公告)号：US09130120B2
公开(公告)日：2015-09-08
申请号：US14142266
申请日：2013-12-27
申请人： Saint-Gobain Cristaux Et Detecteurs
发明人： Jean-Pierre Faurie , Bernard Beaumont
IPC分类号： H01L33/32 , H01S5/30 , H01L21/02 , H01L33/12 , C30B25/18 , C30B29/40 , H01L33/00
CPC分类号： H01L33/32 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01L33/12 , H01S5/3013 , Y10T428/26
摘要： A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm2 at a wavelength within a range of between about 400 nm to about 550 nm.
摘要翻译：衬底包括具有上表面和厚度不大于约1.3μm并且覆盖在衬底的上表面上的缓冲层的III-V族材料。形成在基板上的多个光电子器件在约400nm至约550nm范围内的波长下具有不大于约0.0641nm / cm 2的标准化发光波长标准偏差。

10. 发明申请

US20140185639A1 GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING 有权
标题翻译：具有较薄缓冲层的III-V族基体材料及其制备方法
公开(公告)号：US20140185639A1
公开(公告)日：2014-07-03
申请号：US14142266
申请日：2013-12-27
申请人： Saint-Gobain Cristaux Et Detecteurs
发明人： Jean-Pierre Faurie , Bernard Beaumont
IPC分类号： H01L33/32 , H01S5/30
CPC分类号： H01L33/32 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01L33/12 , H01S5/3013 , Y10T428/26
摘要： A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm2 at a wavelength within a range of between about 400 nm to about 550 nm.
摘要翻译：衬底包括具有上表面和厚度不大于约1.3μm并且覆盖在衬底的上表面上的缓冲层的III-V族材料。形成在基板上的多个光电子器件在约400nm至约550nm范围内的波长下具有不大于约0.0641nm / cm 2的标准化发光波长标准偏差。

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