专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09385260B2 Apparatus and methods for forming thin film solar cell materials 有权
标题翻译：用于形成薄膜太阳能电池材料的装置和方法
公开(公告)号：US09385260B2
公开(公告)日：2016-07-05
申请号：US13938288
申请日：2013-07-10
申请人： TSMC Solar Ltd.
发明人： Kwang-Ming Lin , Chi-Wei Liu , Wen-Cheng Kuo
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/18 , C23C14/5866 , H01L31/0322 , Y02E10/50 , Y02E10/541 , Y02P70/521
摘要： A method for forming thin film solar cell materials introducing a first inert gas mixture that includes hydrogen selenide into a chamber at a first pressure value until the chamber reaches a second pressure value and at a first temperature value, wherein the second pressure value is a predefined percentage of the first pressure value. The temperature in the chamber is increased to a second temperature value for a selenization process so that the pressure in the chamber increases to a third pressure value. Residual gas that is generated during the selenization process can be removed from the chamber. A second inert gas mixture that includes hydrogen sulfide is added into the chamber until the chamber reaches a fourth pressure value. The temperature in the chamber is increased to a third temperature value for a sulfurization process. The chamber is cooled after the sulfurization process.
摘要翻译：一种形成薄膜太阳能电池材料的方法，其将包含硒化氢的第一惰性气体混合物以第一压力值引入室中，直到室达到第二压力值和第一温度值，其中第二压力值是预定的第一压力值的百分比。室中的温度增加到用于硒化过程的第二温度值，使得室中的压力增加到第三压力值。在硒化过程中产生的残余气体可以从室中除去。将包括硫化氢的第二惰性气体混合物加入到室中，直到室达到第四压力值。室内的温度增加到硫化过程的第三温度值。在硫化过程后冷却室。

2. 发明授权

US09214575B2 Solar cell contact and method of making the contact 有权
标题翻译：太阳能电池接触和接触方法
公开(公告)号：US09214575B2
公开(公告)日：2015-12-15
申请号：US14175105
申请日：2014-02-07
申请人： TSMC SOLAR LTD.
发明人： Wei Chun Hsu , Chen Yun Wang
IPC分类号： H01L31/02 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022433 , H01L31/0749 , H01L31/18 , H01L31/1884 , Y02E10/541
摘要： A solar panel comprises a back contact layer, an absorber layer over the back contact layer, a buffer layer over the absorber layer, and a front contact layer comprising a transparent conductive material over the buffer layer. The front contact layer has a plurality of outer edges and a seed layer comprising a seed layer material along the outer edges.
摘要翻译：太阳能电池板包括背接触层，背接触层上的吸收层，在吸收层上的缓冲层，以及在缓冲层上包含透明导电材料的前接触层。前接触层具有多个外边缘和沿着外边缘包含种子层材料的晶种层。

3. 发明申请

US20150280050A1 METHOD OF MAKING PHOTOVOLTAIC DEVICE THROUGH TAILORED HEAT TREATMENT 审中-公开
标题翻译：通过定制热处理制造光伏器件的方法
公开(公告)号：US20150280050A1
公开(公告)日：2015-10-01
申请号：US14227063
申请日：2014-03-27
申请人： Chen-Yun Wang
发明人： Chen-Yun Wang
IPC分类号： H01L31/18
CPC分类号： H01L31/1884 , H01L31/022483 , H01L31/03923 , H01L31/03925 , H01L31/0749 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： A method of fabricating a photovoltaic device includes a step of forming an absorber layer above a substrate of the photovoltaic device, a step of forming a buffer layer over the absorber layer, and a step of pre-heating the photovoltaic device at a first heating rate to a selected temperature. The first heating rate being higher than 5° C./minute. The method further includes a step of forming a front contact layer over the buffer layer at the selected temperature, after the step of pre-heating the photovoltaic device.
摘要翻译：制造光伏器件的方法包括在光电器件的衬底上形成吸收层的步骤，在吸收层上形成缓冲层的步骤，以及以第一加热速率预热光伏器件的步骤到选定的温度。第一次加热速度高于5℃/分。该方法还包括在预热光伏器件的步骤之后，在选定温度下在缓冲层上形成前接触层的步骤。

4. 发明申请

US20150239001A1 METHOD AND SYSTEM OF CHEMICAL BATH DEPOSITION 有权
标题翻译：化学气相沉积的方法与系统
公开(公告)号：US20150239001A1
公开(公告)日：2015-08-27
申请号：US14186002
申请日：2014-02-21
申请人： TSMC Solar Ltd.
发明人： Pei-Chen TSAI
IPC分类号： B05C11/10 , B05C3/00 , H01L31/18 , B05C3/02
CPC分类号： B05C11/1002 , B05C3/005 , B05C3/02 , H01L31/1828 , Y02E10/50 , Y02E10/543 , Y02P70/521
摘要： An apparatus for chemical bath deposition includes a housing defining a chemical tank, a circulation pipe, and at least one flow adjustment device disposed inside the chemical tank. The chemical tank has an opening on a top surface and is configured to accept and hold at least one substrate inside the chemical tank. The circulation pipe has at least one portion inside the chemical tank, and is configured to supply at least one chemical to the chemical tank. The at least one flowing adjustment device includes any one of a turbine, a diffuser and a bubbler, or a combination thereof.
摘要翻译：一种用于化学浴沉积的设备包括限定化学罐，循环管和设置在化学罐内部的至少一个流量调节装置的壳体。化学罐在顶表面上具有开口，并且构造成在化学罐内容纳和保持至少一个基底。所述循环管具有至少一部分在所述化学罐内部，并且构造成向所述化学罐供应至少一种化学品。至少一个流动调节装置包括涡轮机，扩散器和起泡器中的任何一个或其组合。

5. 发明申请

US20150236183A1 SOLAR CELL AND METHOD OF FABRICATING SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20150236183A1
公开(公告)日：2015-08-20
申请号：US14183557
申请日：2014-02-19
申请人： TSMC Solar Ltd.
发明人： Shih-Wei CHEN
IPC分类号： H01L31/052 , H01L31/18
CPC分类号： H01L31/052 , H01L31/0463 , H01L31/0465 , H01L31/073 , H01L31/0749 , Y02E10/541 , Y02E10/543
摘要： A solar cell device and a method of fabricating the device is described. The solar cell is fabricated by providing a substrate, depositing a back contact over the substrate, depositing an absorber over the back contact, depositing a front contact over the absorber, and embedding a highly thermally conductive material within the solar cell. The highly thermally conductive material can be embedded as a highly thermally conductive layer between the substrate and the back contact, a highly thermally conductive fill within a P3 scribe line, or both.
摘要翻译：对太阳能电池装置及其制造方法进行说明。太阳能电池通过提供衬底，在衬底上沉积背接触，在背接触上沉积吸收体，在吸收体上沉积前接触，并在太阳能电池内嵌入高导热材料来制造太阳能电池。高导热性材料可以作为高度导热的层被嵌入在衬底和背面接触之间，P3划线内的高导热性填料，或两者都是。

6. 发明申请

US20150114445A1 TRANSPARENT COVER FOR SOLAR CELLS AND MODULES 审中-公开
标题翻译：太阳能电池和模块的透明罩
公开(公告)号：US20150114445A1
公开(公告)日：2015-04-30
申请号：US14062921
申请日：2013-10-25
申请人： TSMC Solar Ltd.
发明人： Jyh-Lih WU , Wen-Tsai YEN , Wei-Lun XU
IPC分类号： H01L31/048 , H01L31/18
CPC分类号： H01L31/048 , G02B5/008 , H01L31/02168 , H01L31/0232 , H01L31/055 , H01L31/18 , Y02E10/52
摘要： A solar cell device and a method of fabricating the same are described. The method of fabricating a solar cell includes forming a photovoltaic substructure including a substrate, back contact, absorber and buffer, forming a transparent cover separate from the photovoltaic substructure including a transparent layer and a plasmonic nanostructured layer in contact with the transparent layer, and adhering the transparent cover on top of the photovoltaic substructure. The plasmonic nanostructured layer can include metal nanoparticles.
摘要翻译：对太阳能电池装置及其制造方法进行说明。制造太阳能电池的方法包括形成包括基板，背接触件，吸收器和缓冲器的光伏子结构，形成与包括与透明层接触的透明层和等离子体纳米结构层的光伏子结构分离的透明盖，并且粘附光伏子结构顶部的透明盖。等离子体激元纳米结构层可以包括金属纳米粒子。

7. 发明申请

US20150059850A1 PHOTOVOLTAIC DEVICE WITH BACK REFLECTOR 审中-公开
标题翻译：具有背反射器的光电装置
公开(公告)号：US20150059850A1
公开(公告)日：2015-03-05
申请号：US14013099
申请日：2013-08-29
申请人： TSMC SOLAR LTD.
发明人： Jyh-Lih WU , Li XU , Wen-Tsai YEN , Chung-Hsien WU
IPC分类号： H01L31/052 , H01L31/18
CPC分类号： H01L31/0445 , H01L31/056 , H01L31/0749 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： A device and method of improving efficiency of a thin film solar cell by providing a back reflector between a back electrode layer and an absorber layer. Back reflector reflects sunlight photons back into the absorber layer to generate additional electrical energy. The device is a photovoltaic device comprising a substrate, a back electrode layer, a back reflector, an absorber layer, a buffer layer, and a front contact layer. The back reflector is formed as a plurality of parallel lines.
摘要翻译：一种通过在背电极层和吸收体层之间设置背反射器来提高薄膜太阳能电池的效率的装置和方法。后反射器将阳光光子反射回吸收层，以产生额外的电能。该器件是包括衬底，背面电极层，后反射器，吸收层，缓冲层和前接触层的光电器件。后反射镜形成为多条平行线。

8. 发明申请

US20140193939A1 METHOD AND SYSTEM FOR FORMING ABSORBER LAYER ON METAL COATED GLASS FOR PHOTOVOLTAIC DEVICES 有权
标题翻译：用于光伏器件的金属涂层玻璃上形成吸收层的方法和系统
公开(公告)号：US20140193939A1
公开(公告)日：2014-07-10
申请号：US13733989
申请日：2013-01-04
申请人： TSMC SOLAR LTD.
发明人： Edward TENG , Ying-Chen CHAO , Chih-Jen YANG
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , C23C14/18 , C23C14/34 , C23C14/5806 , F27B5/14 , F27D5/0037 , F27D2003/0087 , H01L21/67109 , H01L21/68764 , H01L21/68771 , H01L31/0322 , H01L31/18 , Y02E10/541
摘要： An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.
摘要翻译：一种用于形成太阳能电池的装置包括限定真空室的壳体，可旋转基板支撑件，至少一个内部加热器和至少一个外部加热器。衬底支撑件在配置成保持衬底的真空室内。所述至少一个内部加热器位于所述真空室的中心和所述基板支撑件之间，并且被配置为加热所述基板支撑件上的基板的后表面。所述至少一个外部加热器位于所述真空室的外表面和所述基板支撑件之间，并且被配置为加热所述基板支撑件上的基板的前表面。

9. 发明申请

US20140144769A1 SPUTTERING APPARATUS AND METHOD 有权
标题翻译：溅射装置和方法
公开(公告)号：US20140144769A1
公开(公告)日：2014-05-29
申请号：US13689172
申请日：2012-11-29
申请人： TSMC SOLAR LTD.
发明人： Wen-Tsai YEN , Chung-Hsien WU , Shih-Wei CHEN , Ying-Hsin WU , Jui-Fu HSUEH , Kuan-Chu CHEN
IPC分类号： C23C14/34
CPC分类号： C23C14/086 , C23C14/3407 , C23C14/3492 , C23C14/56 , H01J37/32651
摘要： A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.
摘要翻译：溅射装置包括被配置为容纳至少一个溅射靶和待涂覆的至少一个基底的室。腔室具有至少一个限定可调节孔径的可调节屏蔽构件。该构件位于至少一个溅射靶和至少一个衬底之间。孔径可以在由面积和形状组成的组中的至少一个中调节。

10. 发明申请

US20130269778A1 CIGS SOLAR CELL STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译： CIGS太阳能电池结构及其制造方法
公开(公告)号：US20130269778A1
公开(公告)日：2013-10-17
申请号：US13445997
申请日：2012-04-13
申请人： Hsuan-Sheng YANG , Wen-Chin LEE , Li-Huan ZHU
发明人： Hsuan-Sheng YANG , Wen-Chin LEE , Li-Huan ZHU
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L31/0322 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method for manufacturing a CIGS thin film photovoltaic device includes forming a back contact layer on a substrate, forming an Se-rich layer on the back contact layer, forming a precursor layer on the Se-rich layer by depositing copper, gallium and indium resulting in a first interim structure, annealing or selenizing the first interim structure, thereby forming Cu/Se, Ga/Se or CIGS compounds along the interface between the back contact layer and the precursor layer and resulting in a second interim structure, and selenizing the second interim structure, thereby converting the precursor layer into a CIGS absorber layer on the back contact layer.
摘要翻译：一种制造CIGS薄膜光伏器件的方法包括在衬底上形成背接触层，在背接触层上形成富硒层，通过沉积铜，镓和铟在富硒层上形成前体层，从而形成在第一中间结构中，对第一中间结构进行退火或硒化，从而沿着背接触层和前体层之间的界面形成Cu / Se，Ga / Se或CIGS化合物，并产生第二中间结构，并将第二中间结构从而将前体层转化为背接触层上的CIGS吸收层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式