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    • 10. 发明授权
    • Molding, production method therefor, part for electronic devices and electronic device
    • 成型及其制造方法,电子设备和电子设备部件
    • US09556513B2
    • 2017-01-31
    • US13818050
    • 2011-07-27
    • Wataru IwayaTakeshi Kondo
    • Wataru IwayaTakeshi Kondo
    • C23C14/48B29C59/14B05D7/04B05D1/00C08J7/04C08J7/12
    • C23C14/48B05D1/62B05D7/04B05D2252/02B29C59/14B29C2059/147C08J7/045C08J7/047C08J7/123C08J2367/02C08J2433/12C08J2483/16Y10T428/31667
    • The invention is a formed article including a gas barrier layer, the gas barrier layer including a surface layer part that is formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, the surface layer part having a carbon atom content rate of more than 0 and not more than 70%, an oxygen atom content rate of 10 to 70%, a nitrogen atom content rate of 0 to 35%, and a silicon atom content rate of 20 to 55%, based on a total content rate of carbon atoms, oxygen atoms, nitrogen atoms, and silicon atoms; a method for producing the formed article; an electronic device member including the formed article; and an electronic device comprising the electronic device member. The formed article of the invention exhibits an excellent gas barrier capability, excellent transparency, and excellent bending resistance. The method for producing a formed article of the invention can efficiently, safely, and conveniently produce the formed article of the invention. The electronic device member of the invention may suitably be used for electronic devices such as displays and solar cells.
    • 本发明是一种包含气体阻隔层的成形制品,所述阻气层包括由至少包含碳原子,氧原子和硅原子的材料形成的表面层部分,所述表面层部分具有 碳原子含有率大于0且不超过70%,氧原子含量率为10〜70%,氮原子含量率为0〜35%,硅原子含有率为20〜55%,基于 碳原子,氧原子,氮原子和硅原子的总含量比; 一种生产成形品的方法; 包括所述成形制品的电子装置构件; 以及包括电子设备构件的电子设备。 本发明的成型体具有优异的阻气性,优异的透明性和优异的耐弯曲性。 本发明的成型体的制造方法能够有效,安全,方便地制造本发明的成型体。 本发明的电子设备构件可以适用于诸如显示器和太阳能电池的电子设备。