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1. 发明申请

US20180223662A1 CUTTING APPARATUS USING A CLEARING ARRANGEMENT 审中-公开
公开(公告)号：US20180223662A1
公开(公告)日：2018-08-09
申请号：US15516645
申请日：2015-10-02
申请人： SANDVIK INTELECTUAL PROPERTY AB
发明人： Bernhard EBNER , Erich BRANDL
IPC分类号： E21D9/10 , E21C29/22 , E21C25/18 , E21C35/06 , E21C25/06 , E21C35/08
CPC分类号： E21C35/06 , C01B33/035 , E21C25/06 , E21C25/18 , E21C27/24 , E21C29/22 , E21C35/08 , E21C35/20 , E21D9/1013 , E21D9/1026 , E21D9/1033 , E21D9/1093 , E21D9/11 , E21D9/12 , E21D9/126 , E21D20/003 , E21D23/08 , F15B11/16 , F16H57/023 , F16H2057/0235
摘要： A cutting unit for use with a cutting apparatus suitable for creating tunnels or subterranean roadways and the like, includes a cutting arm configured for pivotal movement around at least one pivot axis and a cutting head mounted to the cutting arm. The cutting head includes at least one rotatable cutting element for detaching material from a rock face, and a clearing arrangement mounted to the cutting arm. The clearing arrangement has a clearing blade for pushing detached rock material onto a loading table of the cutting apparatus, the clearing blade being guided by a first guiding mechanism to allow a free movement of the clearing blade in a first direction.

2. 发明授权

US09988719B2 Method of manufacturing an electrode for vapor deposition 有权
公开(公告)号：US09988719B2
公开(公告)日：2018-06-05
申请号：US14350428
申请日：2012-03-28
申请人： Jae Bum Kim
发明人： Jae Bum Kim
IPC分类号： H01R43/00 , C23C16/50 , C01B33/035 , B32B15/04 , H01L31/18
CPC分类号： C23C16/50 , B32B15/043 , C01B33/035 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T29/49208 , Y10T428/12493
摘要： An electrode for vapor deposition process may include: a body section mounted at a lower portion of the electrode and adapted to be electrically connected to an external electric source; and a head section integrally formed at an upper portion of the body section and coupled to a substrate, wherein the body section and the head section are formed through forging. According to the electrode, manufacturing cost is greatly lowered and electric conductivity and heat resistance are improved.

3. 发明申请

US20180050917A1 POLYSILICON FILAMENT BONDING DEVICE USING POLYSILICON FRAGMENTS 审中-公开
公开(公告)号：US20180050917A1
公开(公告)日：2018-02-22
申请号：US15322324
申请日：2015-06-26
申请人： OCI COMPANY LTD.
发明人： Byung-Chang KANG , Chang-Ryol KIM
IPC分类号： C01B33/035 , B23K20/06 , B23K20/26 , C30B33/06
CPC分类号： C01B33/035 , B23K20/06 , B23K20/26 , C30B33/06
摘要： The present invention relates to a polysilicon filament manufacturing device, and more specifically, to a polysilicon filament binding device for manufacturing a polysilicon filament having a desired length by connecting polysilicon fragments cut from damage, etc. The present invention provides a polysilicon filament binding device comprising: a body part having a barrel-shape; a guide part provided inside the body part, guiding incoming polysilicon fragments; and a main light source for heating the binding surfaces of the polysilicon fragments.

4. 发明授权

US09845247B2 Process for producing polycrystalline silicon 有权
公开(公告)号：US09845247B2
公开(公告)日：2017-12-19
申请号：US14907932
申请日：2014-07-10
申请人： Wacker Chemie AG
发明人： Goeran Klose , Heinz Kraus , Franz Salzeder
IPC分类号： C01B33/035
CPC分类号： C01B33/035
摘要： Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

5. 发明授权

US09738531B2 Process for producing polycrystalline silicon 有权
公开(公告)号：US09738531B2
公开(公告)日：2017-08-22
申请号：US15023567
申请日：2014-08-27
申请人： Wacker Chemie AG
发明人： Barbara Mueller , Walter Haeckl , Wolfgang Stoiber
IPC分类号： C01B33/035
CPC分类号： C01B33/035
摘要： Installation of a shield around a Siemens reactor prior to harvesting polysilicon rods produced therein allows the upper, bell jar-like shell to be removed for cleaning, while protecting the polysilicon rods from contamination and increasing safety of nearby personnel. The polysilicon rods are harvested while the shield is present.

6. 发明申请

US20170073235A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD, POLYCRYSTALLINE SILICON ROD, AND POLYCRYSTALLINE SILICON MASS 审中-公开
标题翻译：生产多晶硅，多晶硅和多晶硅质量的方法
公开(公告)号：US20170073235A1
公开(公告)日：2017-03-16
申请号：US15309218
申请日：2015-05-27
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shuichi MIYAO , Junichi OKADA , Shigeyoshi NETSU
IPC分类号： C01B33/035
CPC分类号： C01B33/035 , C30B29/06
摘要： A polycrystalline silicon rod is synthesized by the Siemens method (S101). After the polycrystalline silicon rod is covered from above with a plastic bag whose inner surface has been washed, and housed in the plastic bag in a reactor (S103), the polycrystalline silicon rod is removed out of the reactor (S104), and heat-sealed and stored in an enclosed state (S105). According to the present invention, steps conventionally considered as essential, such as washing, etching, and water washing, are not always necessary, and therefore the concentrations of fluorine ions, nitrate ions, and nitrogen dioxide ions remaining on the surface can each be less than 0.2 ppbw. In addition, by covering with the plastic bag, the metal contamination levels decrease significantly. Moreover, when the handling according to the present invention is performed, surface contamination hardly proceeds even if the polycrystalline silicon rod is stored for a long period.
摘要翻译：通过西门子方法合成多晶硅棒（S101）。在多晶硅棒被内表面洗涤后的塑料袋上覆盖多晶硅棒（S103）后，多晶硅棒从反应器中取出（S104），密封并以封闭状态存储（S105）。根据本发明，通常认为是洗涤，蚀刻和水洗等必不可少的步骤并不总是必需的，因此残留在表面上的氟离子，硝酸根离子和二氧化氮离子的浓度各自可以更少超过0.2 ppbw。另外，通过覆盖塑料袋，金属污染水平显着下降。此外，当执行根据本发明的处理时，即使多晶硅棒长期储存，表面污染几乎不进行。

7. 发明申请

US20170057830A1 PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 审中-公开
标题翻译：生产多晶硅的工艺
公开(公告)号：US20170057830A1
公开(公告)日：2017-03-02
申请号：US15123160
申请日：2015-02-27
申请人： Wacker Chemie AG
发明人： Matthias VIETZ
IPC分类号： C01B33/021 , B65B63/00 , B65D5/56 , B65B1/04
CPC分类号： C01B33/021 , B65B1/00 , B65B1/04 , B65B63/00 , B65D5/563 , C01B33/035
摘要： Polycrystalline silicon chunks are packed for further processing and/or for shipment with minimal contamination by introducing the chunks into a cardboard container lined with a non-contaminating plastic. The process is economical, avoids the problems associated with packaging in plastic bags, and provides far less contamination and spillage during transport.
摘要翻译：多晶硅块被包装用于进一步加工和/或以最小的污染进行装运，将块引入到具有非污染塑料的纸板容器中。该过程是经济的，避免了与塑料袋包装相关的问题，并且在运输过程中提供了更少的污染和溢出。

8. 发明授权

US09573817B2 Method and apparatus of manufacturing silicon seed rods 有权
标题翻译：硅种棒的制造方法和装置
公开(公告)号：US09573817B2
公开(公告)日：2017-02-21
申请号：US14471903
申请日：2014-08-28
申请人： Creative Innovations, Inc.
发明人： Vitaliy A. Vaisberg
IPC分类号： B28B1/54 , C01B33/021 , C01B33/035
CPC分类号： C01B33/021 , C01B33/035
摘要： A method and apparatus for manufacturing high-purity long silicon seed rods with controlled resistivity for Siemens and similar processes with using a film of silicon dioxide, wherein a film of silicon dioxide is formed on the seed rod in the course of a reaction between a silicon melt and oxygen. The rod is formed with a quartz die and cooled by direct immersion into a cooling fluid, such as de-ionized water and/or by cooling fluid vapor in the gas cooling zone.
摘要翻译：一种制造用于西门子和类似工艺的具有受控电阻率的高纯度长硅种子棒的方法和装置，其中使用二氧化硅膜，其中在硅的反应过程中在晶棒上形成二氧化硅膜，熔融和氧气。杆用石英模具形成，并通过直接浸入诸如去离子水的冷却流体和/或通过冷却气体冷却区域中的流体蒸气来冷却。

9. 发明申请

US20160329456A1 HIGH THROUGHPUT CHEMICAL VAPOR DEPOSITION ELECTRODE 审中-公开
标题翻译：高通量化学蒸气沉积电极
公开(公告)号：US20160329456A1
公开(公告)日：2016-11-10
申请号：US15144469
申请日：2016-05-02
申请人： Moon Chun
发明人： Moon Chun
IPC分类号： H01L31/18 , C23C16/24 , C30B29/66 , C30B13/16 , C30B29/06
CPC分类号： H01L31/1804 , C01B33/035 , C23C16/01 , C23C16/24 , C30B13/00 , C30B29/06 , C30B35/007
摘要： Processes and systems to fabricate high throughput, low cost tubular polysilicon feed rods, which can be used as direct feedstock to grow a crystalline silicon material, are disclosed. In an example, a chemical vapor deposition (CVD) process includes depositing polysilicon on a tubular electrode to form a tubular polysilicon feed rod. The tubular polysilicon feed rod may be melted in a float zone process to grow the single-crystalline silicon material.
摘要翻译：公开了用于制造可用作生长晶体硅材料的直接原料的高通量，低成本的管状多晶硅进料棒的方法和系统。在一个示例中，化学气相沉积（CVD）工艺包括在管状电极上沉积多晶硅以形成管状多晶硅进料棒。管状多晶硅进料棒可以在漂浮区过程中熔化以生长单晶硅材料。

10. 发明申请

US20160280556A1 APPARATUS FOR MANUFACTURING POLYSILICON 审中-公开
标题翻译：制造多晶硅的装置
公开(公告)号：US20160280556A1
公开(公告)日：2016-09-29
申请号：US15038146
申请日：2014-11-19
申请人： HANWHA CHEMICAL CORPORATION
发明人： Kyu Hak PARK , Sung Eun PARK , Jea Sung PARK , Hee Dong LEE
IPC分类号： C01B33/035
CPC分类号： C01B33/035 , B01J19/087 , B01J2219/0809 , B01J2219/0815 , B01J2219/0828 , B01J2219/0837
摘要： An apparatus for manufacturing polysilicon using a chemical vapor deposition (CVD) reactor is provided. The apparatus for manufacturing polysilicon includes: a reaction chamber including a substrate and a reactor cover; at least a pair of electrodes installed through the substrate by an insulating member and connected with a power supply; at least a pair of filaments which are coupled with the pair of electrodes by an electrode chuck and of which upper ends are connected to each other; and a cover assembly including an electrode cover surrounding an upper surface and a side of each of the pair of electrodes on the substrate and a cover shield covering the upper surface of the electrode cover.
摘要翻译：提供了一种使用化学气相沉积（CVD）反应器制造多晶硅的设备。多晶硅制造装置包括：反应室，包括基板和反应器盖; 至少一对电极，其通过绝缘构件安装在基板上并与电源连接; 至少一对灯丝，其通过电极卡盘与所述一对电极耦合，并且其上端彼此连接; 以及盖组件，其包括围绕所述基板上的所述一对电极的每一个的上表面和侧面的电极盖和覆盖所述电极盖的上表面的盖屏蔽。

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