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1. 发明申请

US20180158687A1 HALOALKYNYL DICOBALT HEXACARBONYL PRECURSORS FOR CHEMICAL VAPOR DEPOSITION OF COBALT 审中-公开
公开(公告)号：US20180158687A1
公开(公告)日：2018-06-07
申请号：US15819620
申请日：2017-11-21
申请人： Entegris, Inc.
发明人： Sangbum Han , Seobong Chang , Jaeeon Park , Bryan Clark Hendrix , Thomas H. Baum
IPC分类号： H01L21/285 , C23C16/06
CPC分类号： H01L21/28556 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18
摘要： The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

2. 发明授权

US09932669B2 Metal nanodot formation method, metal nanodot formation apparatus and semiconductor device manufacturing method 有权
公开(公告)号：US09932669B2
公开(公告)日：2018-04-03
申请号：US15157599
申请日：2016-05-18
申请人： TOKYO ELECTRON LIMITED
发明人： Tadahiro Ishizaka
IPC分类号： H01L21/28 , C23C16/16 , H01L29/423 , H01L27/11524 , H01L27/11556
CPC分类号： C23C16/16 , C23C16/04 , C23C16/45523 , H01L21/28273 , H01L27/11524 , H01L27/11556 , H01L29/42332
摘要： A metal nanodot formation method includes: loading a target substrate inside a processing container of a processing apparatus; depositing a plurality of metal nanodots on a surface of the target substrate by a sequence of: supplying a CO gas from a CO gas container which stores the CO gas into a raw material container which stores a metal carbonyl compound; generating gas of the metal carbonyl compound; introducing the generated gas of the metal carbonyl compound as a mixture gas containing the CO gas into the processing container; and decomposing the metal carbonyl compound on the target substrate, and directly introducing the CO gas from the CO gas container into the processing container, in a state where the introduction of the mixture gas into the processing container is stopped, such that the CO gas is brought into contact with the metal nanodots on the surface of the target substrate.

3. 发明授权

US09540733B2 Film forming method, film forming apparatus and recording medium 有权
标题翻译：成膜方法，成膜装置和记录介质
公开(公告)号：US09540733B2
公开(公告)日：2017-01-10
申请号：US14697824
申请日：2015-04-28
申请人： TOKYO ELECTRON LIMITED
发明人： Tadahiro Ishizaka
IPC分类号： H01L21/768 , H01L21/285 , H01L21/02 , C23C16/06 , C23C16/46 , C23C16/455 , C23C16/52 , C23C16/44 , H01L23/532 , C23C16/16
CPC分类号： C23C16/46 , C23C16/06 , C23C16/16 , C23C16/4412 , C23C16/45525 , C23C16/52 , H01L21/02107 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A film forming method in which in a state in which a target substrate is loaded on a loading table body of a loading table installed in a processing container and an interior of the processing container is evacuated, a film forming material gas is supplied into the processing container while heating the target substrate with a heater installed in the loading table body, to be thermally decomposed or reacted on a surface of the target substrate to form a predetermined film on the target substrate, includes introducing a heat transfer gas containing an H2 gas or an He gas into the processing container to transfer heat of the loading table body to a radially outer side of the loading table body, before the film forming material gas is supplied.
摘要翻译：一种成膜方法，其中在将目标基底装载在安装在处理容器中的装载台的装载台体和处理容器的内部的状态下，将成膜材料气体供给到处理容器，同时用安装在装载台主体中的加热器加热目标基板，在目标基板的表面上热分解或反应以在目标基板上形成预定的膜，包括引入含有H 2气体的传热气体或在供给成膜材料气体之前，将He气体输送到加工容器中，以将装载台体的热量传递到装载台体的径向外侧。

4. 发明申请

US20160258053A1 Machine and Process for building 3-Dimensional Metal and Composite Structures by Using Carbonyl and Other Gases 审中-公开
标题翻译：使用羰基和其他气体建立三维金属和复合结构的机器和工艺
公开(公告)号：US20160258053A1
公开(公告)日：2016-09-08
申请号：US14636326
申请日：2015-03-03
申请人： Joseph Robert Pickens
发明人： Joseph Robert Pickens
IPC分类号： C23C16/16 , C23C16/455 , C23C16/50 , C23C16/46
CPC分类号： C23C16/16 , C23C16/01 , C23C16/04 , C23C16/045 , C23C16/30 , C23C16/4557 , F41A21/02
摘要： The current invention teaches a process to add transition metals to a substrate with careful, spacial control to build up regions selectively, and a machine to enable this process to be performed. The process is amenable to doping with other gases to provide dispersion strengthening and/or to form metal matrix composites. In addition, the process is capable of forming laminar or topologically layered materials. In the present invention, a heated nozzle with a variable orifice projects carbonyl gas or gases at the appropriate temperature to precise locations on a surface. The coordinates on the substrate over which the nozzle is located can be computer controlled. Furthermore, the orifice of the nozzle and the flow rate are controlled to widen or narrow the area of deposition. The substrate can be heated to a temperature where transition metal carbonyl deposition is optimal or near optimal, or heated below the optimal region such that the heated carbonyl gas from the nozzle leads to rapid deposition in the desired localized region. The structure can be built up into complex shapes as desired.
摘要翻译：本发明教导了一种通过谨慎的空间控制将过渡金属添加到基底中以有选择地建立区域的方法，以及使得能够执行该过程的机器。该方法适于掺杂其它气体以提供分散强化和/或形成金属基质复合材料。此外，该方法能够形成层状或拓扑分层的材料。在本发明中，具有可变孔口的加热喷嘴在合适的温度下将羰基气体或气体投射到表面上的精确位置。喷嘴所在的基板上的坐标可以由计算机控制。此外，控制喷嘴的孔口和流速以扩大或缩小沉积面积。衬底可以被加热到过渡金属羰基沉积是最佳或接近最佳状态或加热到最佳区域以下的温度，使得来自喷嘴的加热的羰基气体导致在期望的局部区域中的快速沉积。该结构可根据需要构建成复杂的形状。

5. 发明申请

US20160240433A1 RUTHENIUM FILM FORMING METHOD, FILM FORMING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：薄膜成膜方法，薄膜成型装置和半导体器件制造方法
公开(公告)号：US20160240433A1
公开(公告)日：2016-08-18
申请号：US15043675
申请日：2016-02-15
申请人： Tokyo Electron Limited
发明人： Tadahiro Ishizaka
IPC分类号： H01L21/768 , C23C16/455 , H01L21/285
CPC分类号： H01L21/28556 , C23C16/16 , C23C16/4481 , C23C16/45523 , C23C16/45561 , H01L21/76843 , H01L23/53238
摘要： A ruthenium film forming method includes a deposition process of introducing a mixed gas of a ruthenium carbonyl gas and a CO gas into a processing vessel 1 by supplying the CO gas as a carrier gas from a CO gas container 43 configured to contain the CO gas into a film forming source container 41 configured to contain ruthenium carbonyl in a solid state as a film forming source material, and forming ruthenium film by decomposing the ruthenium carbonyl on a wafer W; and a CO gas introduction process of bringing the CO gas into contact with a surface of the wafer W by introducing the CO gas directly into the processing vessel 1 from the CO gas container 43 after stopping the introducing of the mixed gas into the processing vessel 1. The deposition process and the CO gas introduction process are repeated multiple times.
摘要翻译：钌膜形成方法包括通过从构成为含有CO气体的CO气体容器43供给作为载气的CO气体而将羰基羰基钌和CO气体的混合气体导入处理容器1的沉积工序成膜源容器41，其被配置为含有固态的羰基钌作为成膜源材料，并通过在晶片W上分解羰基钌来形成钌膜; 以及通过在停止将混合气体引入到处理容器1中之后，将CO气体从CO气体容器43直接引入处理容器1中而使CO气体与晶片W的表面接触的CO气体导入工序沉积过程和CO气体引入过程重复多次。

6. 发明授权

US09275898B1 Method to improve selectivity cobalt cap process 有权
标题翻译：提高选择性钴帽工艺的方法
公开(公告)号：US09275898B1
公开(公告)日：2016-03-01
申请号：US14637442
申请日：2015-03-04
申请人： GLOBALFOUNDRIES Inc.
发明人： Jiehui Shu , Zhiguo Sun , Yang Bum Lee , Huang Liu
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/53228 , C23C16/04 , C23C16/16 , C23C16/45523 , H01L21/28562 , H01L21/76826 , H01L21/76849 , H01L21/76862 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a Co cap on a Cu interconnect in or through an ULK ILD with improved selectivity while protecting an ULK ILD surface are provided. Embodiments include providing a Cu filled via in an ULK ILD; depositing a Co precursor and H2 over the Cu-filled via and the ULK ILD, the Co precursor and H2 forming a Co cap over the Cu-filled via; depositing an UV cured methyl over the Co cap and the ULK ILD; performing an NH3 plasma treatment after depositing the UV cured methyl; and repeating the steps of depositing a Co precursor through performing an NH3 plasma treatment to remove impurities from the Co cap.
摘要翻译：提供了在保护ULK ILD表面的情况下，通过ULK ILD或通过ULK ILD在Cu互连上形成Co帽的方法，其具有改进的选择性。实施例包括在ULK ILD中提供Cu填充的通孔; 在Cu填充的通孔和ULK ILD上沉积Co前体和H 2，Co前体和H 2在Cu填充的通孔上形成Co盖; 在Co盖和ULK ILD上沉积UV固化的甲基; 沉积UV固化甲基后进行NH3等离子体处理; 并且重复以下步骤：通过进行NH 3等离子体处理来沉积Co前体以从Co盖去除杂质。

7. 发明授权

US09209074B2 Cobalt deposition on barrier surfaces 有权
公开(公告)号：US09209074B2
公开(公告)日：2015-12-08
申请号：US14717375
申请日：2015-05-20
申请人： Applied Materials, Inc.
发明人： Jiang Lu , Hyoung-Chan Ha , Paul F. Ma , Seshadri Ganguli , Joseph F. Aubuchon , Sang-ho Yu , Murali K. Narasimhan
IPC分类号： B05D5/12 , H01L21/768 , H01L21/285
CPC分类号： H01L21/76871 , C23C16/16 , C23C16/18 , C23C16/42 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

8. 发明申请

US20150344510A1 PRODUCTION METHOD FOR DODECACARBONYL TRIRUTHENIUM 有权
标题翻译：十二烷基二苯醚的生产方法
公开(公告)号：US20150344510A1
公开(公告)日：2015-12-03
申请号：US14655076
申请日：2014-01-20
申请人： TANAKA KIKINZOKU KOGYO K.K.
发明人： Masayuki SAITO , Hirofumi NAKAGAWA , Toshiyuki SHIGETOMI , Kenji GOTO
IPC分类号： C07F15/00
CPC分类号： C07F15/0046 , C01G55/008 , C23C16/16 , C23C16/45553
摘要： The present invention is a method for producing dodecacarbonyl triruthenium (DCR) including a process of carbonylating ruthenium chloride with carbon monoxide, in which an amine is added to a reaction system at 0.8 molar equivalent or more with respect to chlorine of the ruthenium chloride and the carbonylation is conducted at a reaction temperature of 50 to 100° C. and a reaction pressure of 0.2 to 0.9 MPa. According to the present invention, it is possible to produce dodecacarbonyl triruthenium having less residual impurity metals without applying a reaction condition of a high pressure.
摘要翻译：本发明是一种生产十二羰基三钌（DCR）的方法，其包括使用一氧化碳羰基化氯化钌的方法，其中胺相对于氯化钌的氯为0.8摩尔当量以上而添加到反应体系中，在50〜100℃的反应温度和0.2〜0.9MPa的反应压力下进行羰基化。根据本发明，可以在不施加高压反应条件的情况下制造具有较少残留杂质金属的十二羰基三钌。

9. 发明申请

US20140287163A1 METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM 审中-公开
标题翻译：形成铜线的方法和形成铜膜的方法和系统
公开(公告)号：US20140287163A1
公开(公告)日：2014-09-25
申请号：US14297726
申请日：2014-06-06
申请人： TOKYO ELECTRON LIMITED
发明人： Tadahiro ISHIZAKA , Atsushi GOMI , Takara FUKUSHIMA , Osamu YOKOYAMA , Takashi SAKUMA , Chiaki YASUMURO , Hiroyuki TOSHIMA , Tatsuo HATANO , Yasushi MIZUSAWA , Masamichi HARA , Kenzi SUZUKI
IPC分类号： H01L21/02
CPC分类号： H01L21/02104 , C23C14/025 , C23C14/046 , C23C14/345 , C23C14/541 , C23C14/5806 , C23C16/16 , H01J37/32899 , H01J37/34
摘要： A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.
摘要翻译：提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得发生铜进入沟槽或孔的迁移。

10. 发明申请

US20140079958A1 Metallurgically Bonded Stainless Steel 有权
标题翻译：冶金不锈钢
公开(公告)号：US20140079958A1
公开(公告)日：2014-03-20
申请号：US14052712
申请日：2013-10-12
申请人： Arcanum Alloy Design Inc.
发明人： Daniel E. Bullard , Joseph E. McDermott
IPC分类号： B32B15/01
CPC分类号： B05D7/14 , B05D3/0254 , B23K35/004 , B23K35/308 , B23K35/3086 , B23K35/365 , B23K35/404 , B32B15/01 , B32B15/011 , C22C38/18 , C22C38/40 , C23C16/16 , Y10T428/12431 , Y10T428/12458 , Y10T428/12965 , Y10T428/12979
摘要： A steel wire having a stainless steel exterior; the steel wire includes a core region that comprises at least 55 wt. % iron which is metallurgically bonded to a stainless steel coating that consists of a stainless steel region and a bonding region. The stainless steel region can have a thickness of about 1 μm to about 250 μm, and a stainless steel composition that is approximately consistent across the thickness of the stainless steel region. The stainless steel composition includes an admixture of iron and about 10 wt. % to about 30 wt. % chromium. The bonding region is positioned between the stainless steel region and the core region, has a thickness that is greater than 1 μm and less than the thickness of the stainless steel region, and has a bonding composition. The bonding composition includes an admixture of iron and chromium, with a chromium concentration proximal to the stainless steel region that is approximately equal to the chromium concentration of the stainless steel region and has a chromium concentration proximal to the core region that has less than about 5 wt. % chromium.
摘要翻译：钢丝不锈钢外壳; 所述钢丝包括芯区域，所述核心区域包含至少55wt。％铁，其冶金结合到由不锈钢区域和结合区域组成的不锈钢涂层。不锈钢区域可以具有约1μm至约250μm的厚度，以及在不锈钢区域的厚度上大致一致的不锈钢组合物。不锈钢组合物包括铁和约10wt。％至约30wt。％铬。接合区域位于不锈钢区域和芯部区域之间，其厚度大于1μm且小于不锈钢区域的厚度，并且具有接合组成。粘合组合物包括铁和铬的混合物，铬浓度接近不锈钢区域，其大致等于不锈钢区域的铬浓度，并且具有接近核心区域的铬浓度小于约5 重量％铬。

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