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1. 发明授权

US11993854B2 Chamber wall polymer protection system and method 有权
公开(公告)号：US11993854B2
公开(公告)日：2024-05-28
申请号：US17679537
申请日：2022-02-24
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Po-Hsun Tseng , Yan-Hong Liu
IPC分类号： C23F1/08 , B01J19/00 , B01J19/10 , H01L21/3065
CPC分类号： C23F1/08 , B01J19/0053 , B01J19/10 , H01L21/3065
摘要： In an etch process chamber, oscillators are positioned a predetermined distance away from an outer wall and coupled to a microwave generator. An inner wall of the process chamber on which particulates such as polymers adhere from the etch process is vibrated via operations of the oscillators. A gas flows into the cavity defined by the inner wall to collect the displaced particulates, which is then pumped out of the cavity to clean the process chamber. A controller identifies the polymer recipe used during the etch process and selects an oscillation program from memory. A microwave generator, controlled by the controller, is directed to generate microwaves at preselected frequencies determined from the program. The microwave frequencies are communicated to the oscillators, which then vibrate the inner wall at such received frequencies.

2. 发明公开

US20240124984A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE GRIPPING DEVICE 审中-公开
公开(公告)号：US20240124984A1
公开(公告)日：2024-04-18
申请号：US18483608
申请日：2023-10-10
申请人： Tokyo Electron Limited
发明人： Yusuke HASHIMOTO , Daisuke GOTO , Nobuhiro OGATA , Jiro HIGASHIJIMA , Tomoaki OBARU , Kanta MORI
IPC分类号： C23F1/08
CPC分类号： C23F1/08 , H01L21/67023
摘要： A substrate processing apparatus that supplies a processing liquid to a front surface of a substrate which is rotating, includes: a substrate holder configured to hold the substrate, wherein the substrate holder includes: a gripper configured to come into contact with a periphery of the substrate to grip the substrate; and a base to which the gripper is attached.

3. 发明授权

US11905603B2 Substrate processing method and substrate processing apparatus 有权
公开(公告)号：US11905603B2
公开(公告)日：2024-02-20
申请号：US17553971
申请日：2021-12-17
申请人： Tokyo Electron Limited
发明人： Takashi Nakazawa , Isamu Miyamoto , Keigo Satake , Kenji Nakamizo
IPC分类号： C23F1/26 , C23F1/08
CPC分类号： C23F1/26 , C23F1/08
摘要： A substrate processing apparatus includes: a mixer configured to mix sulfuric acid as a first component and a second component different from the first component to prepare an etchant; a nozzle configured to eject the etchant to a substrate; a first component supplier including a first flow path that supplies the first component to the mixer, a first instantaneous flowmeter and a first flow rate controller provided in the first flow path; a second component supplier including a second flow path different from the first flow path and configured to supply the second component to the mixer, a second instantaneous flowmeter and a second flow rate controller provided in the second flow path; and a controller configured to control the first and second flow rate controllers using average flow rates of the first component and the second component during the ejection of the etchant to the substrate.

4. 发明公开

US20230278068A1 AUTOMOTIVE PART IDENTIFICATION MARKING SYSTEM 审中-公开
公开(公告)号：US20230278068A1
公开(公告)日：2023-09-07
申请号：US18178924
申请日：2023-03-06
申请人： CatMarks Manufacturing, LLC
发明人： Milton Rodriguez , Jason Rodriguez
IPC分类号： B05C17/06 , C23F1/08 , C23F1/16
CPC分类号： B05C17/06 , C23F1/08 , C23F1/16 , B60R13/10
摘要： A method and system for creating readily identifiable discrete markings on an application surface of an object. The system comprises a stencil having a cutout openings forming a discrete identifier, and a marking reagent comprising an organic solvent, isopropyl alcohol, and a metal marking component. After applying the stencil to an application surface, the marking reagent is applied to the application surface via the cutout openings. The marking reagent may then etch the discrete identifier as well portions on an interior portion of the application surface. In some applications, the system may be applied to a surface having dirt and grease. In addition, marking reagent may embed a cured portion of the marking reagent within the well portions

5. 发明公开

US20230203669A1 SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD 审中-公开
公开(公告)号：US20230203669A1
公开(公告)日：2023-06-29
申请号：US18145138
申请日：2022-12-22
申请人： SEMES CO., LTD.
发明人： Shin Hwa KANG , Seung Un OH , Young Ho PARK , Sang Hyeon RYU , Kwang Sup KIM
IPC分类号： C23F1/08 , H01L21/68
CPC分类号： C23F1/08 , H01L21/681
摘要： Disclosed is a method for treating a substrate, on which a plurality of reference marks and a pattern are formed. The method includes a process preparing operation, a location information acquiring operation of acquiring information on an actual location of the pattern, and a process executing operation of supplying a treatment liquid to the substrate, and heating the substrate by irradiating laser light to the pattern on the substrate, to which the treatment liquid is applied, the location information acquiring operation includes acquiring information on actual locations of, among the plurality of reference marks, at least three reference marks, and acquiring information of the actual location of the pattern through the information of the actual locations of the reference marks.

6. 发明申请

US20180108545A1 WET ETCHING DEVICE AND EXPLOSION PREVENTION METHOD THEREOF 审中-公开
公开(公告)号：US20180108545A1
公开(公告)日：2018-04-19
申请号：US15117450
申请日：2016-06-20
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Jia Li
IPC分类号： H01L21/67 , G02F1/13 , C23F1/00
CPC分类号： H01L21/67023 , C23F1/00 , C23F1/08 , C23F1/18 , G02F1/1303 , G02F1/136286 , G02F2001/13606 , H01L21/67051 , H01L21/6708 , H01L21/67109 , H01L21/67248 , H01L27/124
摘要： The present invention provides a wet etching device and an explosion prevention method thereof. The heater (22) is utilized to monitor the temperature in the liquid storage tank (2). When the temperature in the liquid storage tank (2) reaches the preset upper temperature limit, the control device (23) automatically deactivates the heater (22), and activates the chamber cleaning device (11) to spray the cleaning water. After washing the reaction chamber (1), the cleaning water flows back in the liquid storage tank (2) and neutralizes the etching solution in the liquid storage tank (2) to lower the temperature in the liquid storage tank (2). It can effectively monitor and reduce the temperature in the liquid storage tank (2) to prevent that the liquid storage tank (2) is overheated and explodes, to ensure the production safety and raise the production utilization rate.

7. 发明申请

US20170350018A1 Inductively Coupled Plasma Source with Multiple Dielectric Windows and Window Supporting Structure 审中-公开
公开(公告)号：US20170350018A1
公开(公告)日：2017-12-07
申请号：US15685787
申请日：2017-08-24
申请人： Applied Materials, Inc.
发明人： Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , James D. Carducci , Douglas A. Buchberger , Ankur Agarwal , Jason A. Kenney , Leonid Dorf , Ajit Balakrishna , Richard Fovell
IPC分类号： C23F1/08 , C23C14/28 , B01J12/00 , H05H1/46 , H01J37/32
CPC分类号： C23F1/08 , B01J12/002 , C23C14/28 , H01J37/321 , H01J37/3211 , H01J37/32733 , H01J37/32834 , H05H1/46
摘要： A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

8. 发明申请

US20170338106A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20170338106A1
公开(公告)日：2017-11-23
申请号：US15668347
申请日：2017-08-03
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Tatsushi UEDA , Tadashi TERASAKI , Unryu OGAWA , Akito HIRANO
IPC分类号： H01L21/02 , C23F1/00 , C23F1/08 , H01L21/28 , C23C16/50
CPC分类号： H01L21/02236 , C23C16/50 , C23F1/00 , C23F1/08 , H01L21/0223 , H01L21/02233 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273
摘要： A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.

9. 发明授权

US09657397B2 Apparatus for treating surfaces of wafer-shaped articles 有权
公开(公告)号：US09657397B2
公开(公告)日：2017-05-23
申请号：US14144846
申请日：2013-12-31
申请人： LAM RESEARCH AG
发明人： Andreas Gleissner
IPC分类号： C23F1/08 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： C23F1/08 , H01J37/32467 , H01J37/32495 , H01J37/32715 , H01L21/67126 , H01L21/6719 , H01L21/68792
摘要： An apparatus for processing wafer-shaped articles comprises a closed process chamber providing a gas-tight enclosure. A rotary chuck is located within the closed process chamber, the rotary chuck being adapted to hold a wafer shaped article thereon. A lid is secured to an upper part of the closed process chamber, the lid comprising an upper plate formed from a composite fiber-reinforced material and a lower plate that faces into the process chamber and is formed from a chemically-resistant plastic.

10. 发明授权

US09562291B2 Metal etch system 有权
标题翻译：金属蚀刻系统
公开(公告)号：US09562291B2
公开(公告)日：2017-02-07
申请号：US14508648
申请日：2014-10-07
申请人： MEI, LLC
发明人： Scott Tice , Jeffrey M. Wagner
IPC分类号： C23F1/00 , C23F1/08 , C23F1/14 , H01L21/3213 , H01L21/67
CPC分类号： H01L21/67086 , C23F1/08 , C23F1/14 , H01L21/32134 , H01L21/67051 , H01L21/68764 , H01L21/68771
摘要： Embodiments of systems and methods of etching material from the surface of a wafer are provided. In one representative embodiment, an apparatus comprises a fluid reservoir configured to receive a fluid including an etchant and one or more wafers in a cassette. The apparatus can further comprise a roller member in the fluid reservoir to frictionally engage the one or more wafers and to displace the one or more wafers with respect to a bottom portion of the cassette when the cassette is in the fluid reservoir. The apparatus can further comprise a motor outside the fluid reservoir and magnetically coupled to the roller member such that activation of the motor causes corresponding rotation of the roller member, and thereby rotation of the one or more wafers when the roller member is in frictional engagement with the one or more wafers.
摘要翻译：提供了从晶片表面蚀刻材料的系统和方法的实施例。在一个代表性的实施例中，一种装置包括流体储存器，其被配置为接收包括蚀刻剂的流体和盒中的一个或多个晶片。该装置还可以包括流体储存器中的辊构件，以摩擦地接合一个或多个晶片，并且当盒子在流体储存器中时相对于盒的底部部分移位一个或多个晶片。该装置还可以包括在流体储存器外部并且磁耦合到辊构件的马达，使得马达的启动导致滚子构件的相应旋转，并且因此当滚动构件与滚子构件摩擦接合时，一个或多个晶片的旋转一个或多个晶片。

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