专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09470744B2 Analysis circuit for field effect transistors having a displaceable gate structure 有权
标题翻译：具有位移栅极结构的场效应晶体管的分析电路
公开(公告)号：US09470744B2
公开(公告)日：2016-10-18
申请号：US14116498
申请日：2012-03-12
申请人： Alexander Buhmann , Fabian Henrici
发明人： Alexander Buhmann , Fabian Henrici
IPC分类号： G01P15/12 , G01R31/26 , G01D3/032
CPC分类号： G01R31/2621 , G01D3/032 , G01P15/124
摘要： An analysis circuit for a field effect transistor having a displaceable gate structure, includes a measurement circuit coupled between a supply voltage connection of the analysis circuit and a drain connection of the field effect transistor and configured to output a measurement signal that is dependent on the current strength of a current flowing through the field effect transistor to a measurement connection.
摘要翻译：一种用于具有可移位栅极结构的场效应晶体管的分析电路，包括耦合在分析电路的电源电压连接和场效应晶体管的漏极连接之间的测量电路，并被配置为输出取决于电流的测量信号流经场效应晶体管的电流的强度达到测量连接。

2. 发明授权

US09453854B2 Vibration sensor 有权
标题翻译：振动传感器
公开(公告)号：US09453854B2
公开(公告)日：2016-09-27
申请号：US14192025
申请日：2014-02-27
申请人： KCF TECHNOLOGIES, INC.
发明人： David R. Kraige , Jacob J. Loverich , Stephen J. Wenner
IPC分类号： G01P15/097 , G01P15/09 , G01P15/12 , G01H1/00
CPC分类号： G01P15/097 , G01H1/003 , G01P15/09 , G01P15/124
摘要： A sensor may include a base, an accelerometer rigidly coupled with the base and centered over said base, a circuit arrangement electrically coupled with the accelerometer, and a battery rigidly held in contact with the circuit arrangement and centered over said accelerometer and said base. The base is configured to be secured to a host structure, and the circuit arrangement is configured to receive signals from the accelerometer.
摘要翻译：传感器可以包括基座，与基座刚性耦合并且在所述基座上居中的加速度计，与加速度计电耦合的电路装置，以及刚性地保持与电路装置接触并且在所述加速度计和所述基座上居中的电池。基座被配置为固定到主机结构，并且电路装置被配置为从加速度计接收信号。

3. 发明申请

US20110057236A1 Inertial sensor having a field effect transistor 审中-公开
标题翻译：具有场效应晶体管的惯性传感器
公开(公告)号：US20110057236A1
公开(公告)日：2011-03-10
申请号：US12804981
申请日：2010-08-02
申请人： Ando Feyh
发明人： Ando Feyh
IPC分类号： H01L29/84 , H01L21/64
CPC分类号： G01P15/124 , G01C19/56 , G01P15/0802
摘要： An inertial sensor, having a field effect transistor which includes a gate electrode (9), a source electrode (3a′,3a″,3a′″), a drain electrode (3b′,3b″,3b′″) and a channel area (4) situated between the source electrode (3a′,3a″,3a′″) and the drain electrode (3b′,3b″,3b′″) and whose gate electrode (9) is situated at a distance above the channel area (4). The gate electrode (9) is designed and situated to be stationary and the channel area (4) is designed and situated to be movable. Furthermore, the present invention also relates to a method for manufacturing a motion sensor of this type.
摘要翻译：一种具有场效应晶体管的惯性传感器，其包括栅电极（9），源电极（3a'，3a“，3a”“），漏电极（3b'，3b”，3b“”）位于源电极（3a'，3a“，3a”“之间的区域（4）和漏电极（3b'，3b”，3b“”）之间，其栅电极（9）位于通道区域（4）。栅电极（9）被设计和定位成静止的，并且通道区域（4）被设计和定位成可移动的。此外，本发明还涉及这种类型的运动传感器的制造方法。

4. 发明申请

US20100043546A1 SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：传感器及其制造方法
公开(公告)号：US20100043546A1
公开(公告)日：2010-02-25
申请号：US12516007
申请日：2007-11-29
申请人： Atsushi Kandori , Masao Majima , Kenichi Nagae , Yasuyoshi Takai
发明人： Atsushi Kandori , Masao Majima , Kenichi Nagae , Yasuyoshi Takai
IPC分类号： G01C19/56 , H01L21/30
CPC分类号： G01C19/5719 , G01P15/0802 , G01P15/124 , G01P15/125
摘要： Provided is a sensor including a movably supported movable element and an opposing member. The sensor detects a relative positional relationship between the movable element and the opposing member which are provided with a spacing therebetween The opposing member has an impurity-doped portion which is provided to one of an opposing portion which is opposed to the movable element and an adjoining portion which adjoins the opposing portion. At least a part of the impurity-doped portion is formed on an opposite surface opposite to a surface which is opposed to the movable element, from which opposite surface an electrical wiring is led out.
摘要翻译：提供一种传感器，包括可移动支撑的可移动元件和相对构件。传感器检测可移动元件和相对构件之间的间隔的相对位置关系。相对构件具有杂质掺杂部分，该杂质掺杂部分设置在与可移动元件相对的相对部分中的一个上，邻接相对部分的部分。杂质掺杂部分的至少一部分形成在与可移动元件相对的表面相对的相对表面上，从该导体的相对表面引出电线。

5. 发明申请

US20090127590A1 MICRO ELECTRO MECHANICAL DEVICE, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：微电子机械装置，其制造方法，半导体装置及其制造方法
公开(公告)号：US20090127590A1
公开(公告)日：2009-05-21
申请号：US12264595
申请日：2008-11-04
申请人： Hiroyuki SHIMADA
发明人： Hiroyuki SHIMADA
IPC分类号： H01L21/336 , H01L29/84
CPC分类号： B81B3/0086 , B81B2201/0235 , B81B2201/0264 , G01P15/124
摘要： A micro electro mechanical device includes: a semiconductor layer; a source/drain region formed on both sides of a channel region within the semiconductor layer; a gate insulating film formed on the semiconductor layer; a cavity formed on the gate insulating film; and a gate electrode formed on the cavity, the gate electrode being movable so as to contact with the gate insulating film. In the device, a pressure applied on the gate electrode is detected by a contact area of the gate electrode and the gate insulating film.
摘要翻译：微机电装置包括：半导体层; 源极/漏极区域，形成在半导体层内的沟道区域的两侧; 形成在所述半导体层上的栅极绝缘膜; 形成在栅极绝缘膜上的空腔; 以及形成在所述空腔上的栅电极，所述栅极电极可移动以与所述栅极绝缘膜接触。在该器件中，通过栅电极和栅极绝缘膜的接触区域来检测施加在栅电极上的压力。

6. 发明申请

US20030173611A1 Vertical transistor comprising a mobile gate and a method for the production thereof 失效
标题翻译：包括移动门的垂直晶体管及其制造方法
公开(公告)号：US20030173611A1
公开(公告)日：2003-09-18
申请号：US10311759
申请日：2003-02-12
发明人： Andreas Bertz , Steffen Heinz , Thomas Gessner
IPC分类号： H01L027/108
CPC分类号： H01L29/84 , G01L9/0098 , G01P15/0802 , G01P15/124
摘要： What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.
摘要翻译：提出的是由半导体晶片制造的垂直场效应晶体管，其包括由源极区，沟道区和漏极区组成的残余晶体管，以及通过至少一个柔性悬浮体设置的可移动栅极结构所述通道区域的前部并与其间隔开，其特征在于，所述可移动栅极结构由所述半导体晶片的材料构成。可移动结构的悬架优选地将其高度与其宽度的高比率呈现，使得可移动门优选地在晶片平面中移动。

7. 发明申请

US20030045040A1 Method for the production of a field-effect structure and field-effect structure 失效
标题翻译：生产场效应结构和场效应结构的方法
公开(公告)号：US20030045040A1
公开(公告)日：2003-03-06
申请号：US10016259
申请日：2001-10-26
发明人： Wilhelm Frey , Franz Laermer , Klaus Heyers
IPC分类号： H01L021/8238
CPC分类号： G01P15/0802 , G01P15/124 , H01L21/3065
摘要： In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.
摘要翻译：在制造场效应结构和场效应结构的方法中，可动栅极结构布置在漏极和源极之间的衬底中的栅极区域的上方。栅极区域被栅极氧化物覆盖。可移动栅极结构由硅锗制成，并且在制造方法的中间步骤中，栅极氧化物上的锗牺牲层上布置有可动栅结构。

8. 发明申请

US20020005530A1 Field effect transistor, especially for use as a sensor element or acceleration sensor, and method for its manufacture 失效
标题翻译：场效应晶体管，特别是用作传感器元件或加速度传感器，及其制造方法
公开(公告)号：US20020005530A1
公开(公告)日：2002-01-17
申请号：US09838062
申请日：2001-04-19
发明人： Klaus Heyers , Bernhard Elsner
IPC分类号： H01L027/148
CPC分类号： H01L29/84 , G01P15/0802 , G01P15/124 , G01P2015/0814
摘要： A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.
摘要翻译：描述适合用作传感器元件或加速度传感器的场效应晶体管。为此，平面衬底内的场效应晶体管具有通过沟道区彼此分离的漏极区和源极区。此外，提供栅极电极，其布置成在沟道区域上基板上基本上自支撑。栅电极被柔性地支撑，使得作用在其上的具有与衬底的表面平行的部件的外力导致栅极平行于衬底的表面的偏转。还描述了一种方法，其中在第一方法步骤中，在CMOS工艺中制造或制造具有漏极区域，源极区域和沟道区域的集成电路，此后，在第二方法步骤中，使用电镀添加剂技术在集成电路上产生基本上自支撑的栅电极。

9. 发明授权

US06220096B1 Differential wideband vibration 失效
标题翻译：差分宽带振动传感器
公开(公告)号：US06220096B1
公开(公告)日：2001-04-24
申请号：US09253490
申请日：1999-02-19
申请人： Adolfo O. Gutierrez , Daniel M. Edmans , Christopher Cormeau
发明人： Adolfo O. Gutierrez , Daniel M. Edmans , Christopher Cormeau
IPC分类号： G01P1513
CPC分类号： G01P15/124 , G01P15/131
摘要： This invention relates to an apparatus for making highly sensitive differential measurements of acceleration. The vibration sensor includes the use of moveable gate field effect transistors to sense the motion of a cantilever beam relative to the motion sensed by a reference structure, it also includes an actuator element formed by a pair of electrodes actuating electrostatically on the beam. A feedback control loop is also included for force balance operation resulting in a very wide dynamic range for the sensor.
摘要翻译：本发明涉及一种用于进行加速度的高灵敏度差分测量的装置。振动传感器包括使用可移动门场效应晶体管来感测悬臂梁相对于由参考结构检测到的运动的运动，它还包括由在电子束上静电地驱动的一对电极形成的致动器元件。还包括反馈控制回路用于力平衡操作，从而为传感器提供非常宽的动态范围。

10. 发明授权

US5812427A Physical quantity detecting apparatus 失效
标题翻译：物理量检测装置
公开(公告)号：US5812427A
公开(公告)日：1998-09-22
申请号：US634254
申请日：1996-04-18
申请人： Shigeru Nonoyama , Takamoto Watanabe
发明人： Shigeru Nonoyama , Takamoto Watanabe
IPC分类号： G01D5/24 , G01P15/125 , G01P15/13
CPC分类号： G01P15/124 , G01P15/125 , G01P15/131 , G01P2015/0814
摘要： A physical amount detecting apparatus, preferably, an acceleration sensor, includes a sensor element, an A/D converter, a control unit and an activation unit. The sensor element is activated by a supply voltage and outputs an electric signal in accordance with a predetermined physical amount. The A/D converter digitizes an analog electric signal and outputs digital data. The control unit calculates a control amount in order to control the sensor element, as the electric signal is set to a predetermined output, based on the digital data, and generates a control signal in accordance with the control amount. The activation unit activates the sensor element in accordance with the control signal. As a result, the control unit outputs a detecting signal indicating a physical amount in accordance with the control amount or the control signal.
摘要翻译：优选地，加速度传感器的物理量检测装置包括传感器元件，A / D转换器，控制单元和激活单元。传感器元件由电源电压激活，并根据预定的物理量输出电信号。 A / D转换器对模拟电信号进行数字化并输出数字数据。控制单元基于数字数据，计算控制量，以便根据数字数据将电信号设置为预定的输出来控制传感器元件，并根据控制量生成控制信号。激活单元根据控制信号启动传感器元件。结果，控制单元根据控制量或控制信号输出指示物理量的检测信号。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式