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    • 7. 发明授权
    • Optical absorption based device
    • 基于光吸收的装置
    • US09465240B2
    • 2016-10-11
    • US14305817
    • 2014-06-16
    • INTEL CORPORATION
    • Juthika Basak
    • G02B6/12G02F1/025G02F1/015
    • G02F1/025G02F2001/0156G02F2202/105G02F2202/42
    • Embodiments of the present disclosure are directed toward techniques and configurations for an optical absorption based device using a semiconductor-dielectric-semiconductor structure. In one embodiment, the device may include an optical waveguide to transmit light inputted by a light source. The waveguide may include a first semiconductor layer, a second semiconductor layer disposed above the first semiconductor layer, a dielectric layer disposed between the first and second semiconductor layers, and an absorptive material layer disposed between the dielectric layer and the first or second semiconductor layer. The absorptive material layer may have a variable light absorption coefficient to allow intensity of light to be modulated through modulation of the absorption coefficient. The light may be substantially confined between the first and second semiconductor layers of the waveguide. Other embodiments may be described and/or claimed.
    • 本公开的实施例涉及使用半导体 - 电介质 - 半导体结构的基于光吸收的器件的技术和配置。 在一个实施例中,该装置可以包括用于透射由光源输入的光的光波导。 波导可以包括第一半导体层,设置在第一半导体层上方的第二半导体层,设置在第一和第二半导体层之间的介电层,以及设置在介电层和第一或第二半导体层之间的吸收材料层。 吸收材料层可以具有可变的光吸收系数,以通过调节吸收系数来调制光的强度。 光可以基本上限制在波导的第一和第二半导体层之间。 可以描述和/或要求保护其他实施例。