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1. 发明授权

US09903991B2 Wire grid polarizer and method of fabricating the same 有权
公开(公告)号：US09903991B2
公开(公告)日：2018-02-27
申请号：US14623708
申请日：2015-02-17
申请人： Samsung Display Co., Ltd.
发明人： Eun Ae Kwak , Min Hyuck Kang , Moon Gyu Lee
IPC分类号： G02B5/30 , C09K13/00 , C23F4/00 , H01L21/308 , G02F1/1335 , H01L21/3065 , B81C1/00 , G03F7/004 , H01L21/306
CPC分类号： G02B5/3058 , B81C1/00388 , B81C1/00404 , B81C2201/0149 , C09K13/00 , C23F4/00 , G02F2001/133548 , G03F7/0041 , H01L21/30604 , H01L21/3065 , H01L21/3081 , H01L21/3083 , H01L21/3086 , H01L21/3088
摘要： A method of fabricating a wire grid polarizer includes sequentially depositing a conductive wire pattern layer, and a plurality of guide patterns which forms one or more trenches therebetween on the conductive wire pattern layer, hydrophobically treating surfaces of the conductive wire pattern layer exposed in the trenches, and the guide patterns, coating the hydrophobically treated conductive wire pattern layer in the trenches with a neutral layer to partially fill the trenches, filling a remainder of the trenches with a block copolymer of two monomers with different etching rates, aligning the block copolymer filled in the trenches, selectively removing blocks of one monomer among the two monomers from the aligned block copolymer, and patterning the conductive wire pattern layer by using blocks of the other monomer among the two monomers remaining in the trenches and the guide patterns as a mask.

2. 发明授权

US09823563B2 Alcohol compound and method for producing same, method for producing lactone compound, (meth)acrylate ester and method for producing same, polymer and method for producing same, and resist composition and method for producing substrate using same 有权
公开(公告)号：US09823563B2
公开(公告)日：2017-11-21
申请号：US14125727
申请日：2012-06-14
申请人： Satoshi Sakuma , Masashi Serizawa , Atsushi Yasuda , Nobuhisa Yada , Shinichi Maeda
发明人： Satoshi Sakuma , Masashi Serizawa , Atsushi Yasuda , Nobuhisa Yada , Shinichi Maeda
IPC分类号： G03F7/004 , G03F7/20 , C07D493/08 , C07D493/18 , C07D307/93 , G03F7/38 , G03F7/039
CPC分类号： G03F7/004 , C07D307/93 , C07D493/08 , C07D493/18 , G03F7/0041 , G03F7/0392 , G03F7/0397 , G03F7/20 , G03F7/38
摘要： To provide an alcohol compound containing fewer impurities at a high yield by conducting the following steps: a hydroboration process in which a reaction mixture is obtained by reacting in a solvent a compound represented by formula (C) and a boron agent selected from a group of diborane and borane complexes; and an oxidation process in which the pH of the reaction mixture is set at 0.5 to 4, which is conducted after treating the reaction mixture with hydrogen peroxide. In the formula, A1 to A6 are each independently a hydrogen atom, methyl group or ethyl group, and X is an oxygen atom, sulfur atom, methylene group or ethylene group.

3. 发明申请

US20160078887A1 MAIN POLE LAYER WITH AT LEAST TWO SACRIFICIAL LAYERS AND A GAP LAYER 有权
标题翻译：主要的层与至少两个真正的层和一个GAP层
公开(公告)号：US20160078887A1
公开(公告)日：2016-03-17
申请号：US14949638
申请日：2015-11-23
申请人： Seagate Technology LLC
发明人： Wei Tian , Venkateswara Rao Inturi , Dong Lin , Huaqing Yin , Jiaoming Qiu
IPC分类号： G11B5/31
CPC分类号： G11B5/3176 , B81C1/00611 , B81C2201/0109 , C09K13/00 , C23F4/00 , G03F7/0041 , G11B5/1278 , G11B5/187 , G11B5/232 , G11B5/235 , G11B5/3109 , G11B5/3116 , G11B5/3143 , G11B5/3163
摘要： In accordance with one embodiment, a method may be implemented by depositing a non-magnetic gap layer of material above a main pole layer of magnetic material; depositing a sacrificial layer of material above the non-magnetic gap layer of material; etching a portion of the sacrificial layer of material while not entirely removing the sacrificial layer of material; and depositing additional sacrificial material to the etched sacrificial layer.
摘要翻译：根据一个实施例，可以通过在磁性材料的主极层之上沉积材料的非磁隙层来实现一种方法; 在材料的非磁隙层之上沉积材料牺牲层; 在不完全去除材料的牺牲层的同时蚀刻材料的牺牲层的一部分; 以及将另外的牺牲材料沉积到蚀刻的牺牲层。

4. 发明申请

US20160077263A1 WIRE GRID POLARIZER AND METHOD OF FABRICATING THE SAME 有权
标题翻译：电网极化器及其制造方法
公开(公告)号：US20160077263A1
公开(公告)日：2016-03-17
申请号：US14623708
申请日：2015-02-17
申请人： Samsung Display Co., Ltd.
发明人： Eun Ae KWAK , Min Hyuck KANG , Moon Gyu LEE
IPC分类号： G02B5/30 , G02F1/1335
CPC分类号： G02B5/3058 , B81C1/00388 , B81C1/00404 , B81C2201/0149 , C09K13/00 , C23F4/00 , G02F2001/133548 , G03F7/0041 , H01L21/30604 , H01L21/3065 , H01L21/3081 , H01L21/3083 , H01L21/3086 , H01L21/3088
摘要： A method of fabricating a wire grid polarizer includes sequentially depositing a conductive wire pattern layer, and a plurality of guide patterns which forms one or more trenches therebetween on the conductive wire pattern layer, hydrophobically treating surfaces of the conductive wire pattern layer exposed in the trenches, and the guide patterns, coating the hydrophobically treated conductive wire pattern layer in the trenches with a neutral layer to partially fill the trenches, filling a remainder of the trenches with a block copolymer of two monomers with different etching rates, aligning the block copolymer filled in the trenches, selectively removing blocks of one monomer among the two monomers from the aligned block copolymer, and patterning the conductive wire pattern layer by using blocks of the other monomer among the two monomers remaining in the trenches and the guide patterns as a mask.
摘要翻译：制造线栅偏振器的方法包括依次沉积导线图案层和在导线图案层上形成一个或多个沟槽的多个引导图案，疏水处理暴露在沟槽中的导线图案层的表面和引导图案，用中性层在沟槽中涂覆疏水处理的导线图案层以部分地填充沟槽，用不同蚀刻速率的两种单体的嵌段共聚物填充剩余的沟槽，使嵌段共聚物填充在沟槽中，选择性地从对准的嵌段共聚物中除去两种单体中的一种单体的嵌段，并且通过使用留在沟槽中的两种单体中的其它单体的嵌段和导向图案作为掩模来对导电丝图案图案化。

5. 发明申请

US20150255298A1 Sequential Infiltration Synthesis for Advanced Lithography 有权
标题翻译：高级光刻的顺序渗透合成
公开(公告)号：US20150255298A1
公开(公告)日：2015-09-10
申请号：US14645162
申请日：2015-03-11
申请人： UChicago Argonne LLC
发明人： Seth B. Darling , Jeffrey W. Elam , Yu-Chih Tseng , Qing Peng
IPC分类号： H01L21/308 , H01L21/3065 , H01L21/027
CPC分类号： H01L21/3081 , B81C1/00428 , B81C2201/0149 , B82Y40/00 , G03F7/0041 , G03F7/405 , H01L21/0273 , H01L21/0274 , H01L21/0277 , H01L21/0279 , H01L21/3065 , H01L21/3086 , Y10T428/31522
摘要： A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
摘要翻译：通过连续渗透合成（SIS）由无机保护组分改性的等离子体蚀刻抗蚀剂材料和制备改性抗蚀剂材料的方法。改进的抗蚀剂材料的特征在于相对于未改性的抗蚀剂材料具有改进的抗等离子体蚀刻或相关工艺的耐受性，从而允许将图案化特征形成到基底材料中，该基材可以是高纵横比特征。 SIS工艺通过对渗透抗蚀剂材料的气相前体的多次交替曝光而在体抗蚀材料内形成保护组分。可以使用光刻，电子束光刻或嵌段共聚物自组装工艺来初始图案化等离子体蚀刻抗蚀剂材料。

6. 发明授权

US09046765B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film 有权
标题翻译：抗蚀剂图案形成方法，抗蚀剂图案形成辐射敏感性树脂组合物和抗蚀剂膜
公开(公告)号：US09046765B2
公开(公告)日：2015-06-02
申请号：US14037659
申请日：2013-09-26
申请人： JSR CORPORATION
发明人： Hiromitsu Nakashima , Toru Kimura , Yusuke Asano , Masafumi Hori , Reiko Kimura , Kazuki Kasahara , Hiromu Miyata , Masafumi Yoshida
IPC分类号： G03F7/004 , C08F12/20 , H01L21/027 , C08F220/22 , C08F220/24 , C08F220/28 , G03F7/20 , G03F7/039 , G03F7/11
CPC分类号： G03F7/0041 , C08F220/22 , C08F220/24 , C08F220/28 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , H01L21/027 , H01L21/0274
摘要： A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film.
摘要翻译：抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物在基板上提供具有30至40mN / m的表面自由能的抗蚀剂膜。通过经由掩模施加辐射来曝光抗蚀剂膜。显影出抗蚀剂膜。优选的是，抗蚀剂膜的曝光包括通过设置在抗蚀剂膜上的浸渍液体曝光抗蚀剂膜。

7. 发明申请

US20140110888A1 STABILIZATION OF VINYL ETHER MATERIALS 审中-公开
标题翻译：乙烯基材料的稳定性
公开(公告)号：US20140110888A1
公开(公告)日：2014-04-24
申请号：US14139999
申请日：2013-12-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Frances A. Houle , Hiroshi Ito
IPC分类号： G03F7/027 , G03F7/004 , B29C59/00 , G03F7/075
CPC分类号： G03F7/027 , B29C59/002 , C09D4/00 , G03F7/0041 , G03F7/0755 , C08F216/125
摘要： A stable viscosity coating composition, a method of forming the stable viscosity coating composition and a method for using the stable viscosity coating composition in a micro-molding imprint lithographic process, such as Step and Flash Imprint Lithography is disclosed. The stable viscosity coating composition may include at least one vinyl ether having at least one vinyl ether group (—OCR═CR2), and a stabilizer, wherein the stabilizer may be 9-anthracenemethanol, a substituted 9-anthracenemethanol, phenothiazine, or a substituted phenothiazine. The coating composition may include a radiation sensitive photoacid generator (PAG). The method of forming the coating composition comprises combining at least one vinyl ether having at least one vinyl ether group (—OCR═CR2), and at least one stabilizer.
摘要翻译：公开了稳定粘度涂料组合物，形成稳定粘度涂料组合物的方法和在微型成型压印光刻工艺中使用稳定粘度涂料组合物的方法，例如步骤和闪光印记平版印刷术。稳定粘度涂料组合物可以包括至少一种具有至少一个乙烯基醚基（-OCR = CR 2）的乙烯基醚和稳定剂，其中稳定剂可以是9-蒽二甲醇，取代的9-蒽甲醇，吩噻嗪或取代的吩噻嗪。涂料组合物可以包括辐射敏感光致酸产生剂（PAG）。形成涂料组合物的方法包括组合至少一种具有至少一个乙烯基醚基（-OCR = CR 2）的乙烯基醚和至少一种稳定剂。

8. 发明申请

US20140023968A1 RESIST PATTERN-FORMING METHOD, RESIST PATTERN-FORMING RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM 有权
标题翻译：电阻图案形成方法，电阻形成辐射敏感性树脂组合物和耐蚀膜
公开(公告)号：US20140023968A1
公开(公告)日：2014-01-23
申请号：US14037659
申请日：2013-09-26
申请人： JSR CORPORATION
发明人： Hiromitsu NAKASHIMA , Toru KIMURA , Yusuke ASANO , Masafumi HORI , Reiko KIMURA , Kazuki KASAHARA , Hiromu MIYATA , Masafumi YOSHIDA
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0041 , C08F220/22 , C08F220/24 , C08F220/28 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , H01L21/027 , H01L21/0274
摘要： A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film
摘要翻译：抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物在基板上提供具有30至40mN / m的表面自由能的抗蚀剂膜。通过经由掩模施加辐射来曝光抗蚀剂膜。显影出抗蚀剂膜。优选的是，抗蚀剂膜的曝光包括通过设置在抗蚀剂膜上的浸渍液体曝光抗蚀剂膜

9. 发明申请

US20120241411A1 SEQUENTIAL INFILTRATION SYNTHESIS FOR ADVANCED LITHOGRAPHY 有权
标题翻译：用于高级光刻的顺序浸润合成
公开(公告)号：US20120241411A1
公开(公告)日：2012-09-27
申请号：US13427619
申请日：2012-03-22
申请人： Seth B. Darling , Jeffrey W. Elam , Yu-Chih Tseng , Qing Peng
发明人： Seth B. Darling , Jeffrey W. Elam , Yu-Chih Tseng , Qing Peng
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01L21/3081 , B81C1/00428 , B81C2201/0149 , B82Y40/00 , G03F7/0041 , G03F7/405 , H01L21/0273 , H01L21/0274 , H01L21/0277 , H01L21/0279 , H01L21/3065 , H01L21/3086 , Y10T428/31522
摘要： A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
摘要翻译：通过连续渗透合成（SIS）由无机保护组分改性的等离子体蚀刻抗蚀剂材料和制备改性抗蚀剂材料的方法。改进的抗蚀剂材料的特征在于相对于未改性的抗蚀剂材料具有改进的抗等离子体蚀刻或相关工艺的耐受性，从而允许将图案化特征形成到基底材料中，该基材可以是高纵横比特征。 SIS工艺通过对渗透抗蚀剂材料的气相前体的多次交替曝光而在体抗蚀材料内形成保护组分。可以使用光刻，电子束光刻或嵌段共聚物自组装工艺来初始图案化等离子体蚀刻抗蚀剂材料。

10. 发明申请

US20030190536A1 Maskless photolithography for etching and deposition 有权
公开(公告)号：US20030190536A1
公开(公告)日：2003-10-09
申请号：US10179565
申请日：2002-06-25
发明人： David P. Fries
IPC分类号： G03F009/00 , G05B019/18 , C25D005/00 , C25D021/12 , C25F003/00 , C25F007/00 , H01L021/00 , H05K003/07 , G03F007/16 , G03F007/207 , G03F007/40 , G03B013/24 , G03B013/26
CPC分类号： G03F7/0041 , G03F7/2002 , G03F7/2043 , G03F7/2051 , G03F7/70291 , G03F7/70341 , Y10T428/31678
摘要： The present invention relates to maskless photolithography using a patterned light generator for creating 2-D and 3-D patterns on objects using etching and deposition techniques. In an embodiment, the patterned light generator uses a micromirror array to direct pattern light on a target object. In an alternate embodiment, the patterned light generator uses a plasma display device to generate and direct patterned light onto a target object. Specifically, the invention provides a maskless photolithography system and method for photo stimulated etching of objects in a liquid solution, patterning glass, and photoselective metal deposition. For photo stimulated etching of objects in a liquid solution, the invention provides a system and method for immersing a substrate in an etchant solution, exposing the immersed substrate to patterned light, and etching the substrate according to the pattern of incident light. For patterning photoreactive glass, the invention provides a system and method for exposing photosensitive or photochromic glass, and washing the target glass with rinse and acid etchant solutions. For photoselective metal deposition, the invention provides a system and method for coating and rinsing a substrate prior to exposure exposing the substrate to a patterned light generator to activate areas corresponding to the incident light pattern, and plating the substrate in the area activated by the light after exposure. By providing a maskless pattern generator, the invention advantageously eliminates the problems associated with using masks for photo stimulated etching, patterning glass, and photoselective metal deposition.

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