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1. 发明申请

US20190138040A1 REFERENCE GENERATION CIRCUIT 审中-公开
公开(公告)号：US20190138040A1
公开(公告)日：2019-05-09
申请号：US16171245
申请日：2018-10-25
申请人： Microsemi Semiconductor (U.S.) Inc.
发明人： Daren ALLEE
IPC分类号： G05F1/567 , G05F1/575 , H03K17/687
CPC分类号： G05F1/567 , G05F1/575 , G05F3/242 , G05F3/30 , H03K17/687
摘要： A reference circuit constituted of: a voltage/current bias circuitry; a first transistor coupled between a common voltage and an first bias circuitry output; a second transistor coupled between the common voltage and a second bias circuitry output; a third transistor coupled between the common voltage and an output providing a temperature and supply invariant current; a resistor coupled between the second transistor and the second output of the bias circuitry; and an output providing a temperature and supply invariant voltage coupled between the resistor and the second transistor, the voltage output terminal further coupled to a gate of the third transistor, wherein the bias circuitry is arranged, in cooperation with the first transistor, to generate a first current at the first output thereof, and, in cooperation with the second transistor, to generate a second current at the second output thereof, the current magnitudes exhibiting a ratio of a predetermined value.

2. 发明授权

US09973088B2 Voltage regulator circuits for wireless devices 有权
公开(公告)号：US09973088B2
公开(公告)日：2018-05-15
申请号：US15415121
申请日：2017-01-25
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Florinel G. Balteanu , Jakub F. Pingot , Peter Harris Robert Popplewell
IPC分类号： H04B1/38 , H02M3/158 , H03F3/20 , H03F3/189 , H04B1/40
CPC分类号： H02M3/158 , G05F1/56 , G05F3/242 , G05F3/262 , H01L21/823475 , H01L23/528 , H01L27/0629 , H03F3/189 , H03F3/20 , H04B1/40 , Y10T29/41
摘要： Voltage regulator circuits for wireless devices are provided. In some implementations, a transceiver module includes a transceiver circuit that generates a radio frequency (RF) signal, a power amplifier circuit that receives the RF signal and generates an amplified RF signal, and a voltage regulator circuit that receives an input voltage and provides a desired voltage to the power amplifier circuit. The voltage regulator circuit is operable in a regulation mode in which the desired voltage includes a regulated voltage and in a bypass mode in which the desired voltage includes a bypass voltage. The voltage regulator circuit includes a field-effect transistor (FET) electrically connected between the input voltage and the desired voltage, an amplifier that controls the FET, and a voltage generator that receives the input voltage and biases the amplifier.

3. 发明申请

US20170227976A1 CIRCUIT STARTING METHOD, CONTROL CIRCUIT AND VOLTAGE REFERENCE CIRCUIT 审中-公开
公开(公告)号：US20170227976A1
公开(公告)日：2017-08-10
申请号：US15503196
申请日：2015-01-20
申请人： ZTE CORPORATION
发明人： Binbin LI
IPC分类号： G05F1/46 , G05F3/24 , G05F3/30 , G05F1/56
CPC分类号： G05F1/468 , G05F1/56 , G05F3/242 , G05F3/30
摘要： A circuit starting method, a control circuit and a voltage reference circuit are provided. The control circuit includes an operational amplifier circuit and a comparison control circuit, wherein the operational amplifier circuit is arranged to establish an input reference voltage (VREF_INT) and an output reference voltage (VREF_OUT) by means of an operational amplifier (EA) and an external capacitor (C); and the comparison control circuit is arranged to, when the input reference voltage (VREF_INT) and the output reference voltage (VREF_OUT) are consistent, execute a toggle operation and output an enable signal (VREF_OK) to the operational amplifier (EA) so as to shut down the operational amplifier (EA).

4. 发明申请

US20170153659A1 REFERENCE VOLTAGE GENERATION CIRCUIT 审中-公开
公开(公告)号：US20170153659A1
公开(公告)日：2017-06-01
申请号：US15365039
申请日：2016-11-30
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： Anthony Quelen
IPC分类号： G05F3/26
CPC分类号： G05F3/267 , G05F3/242
摘要： An FDSOI reference voltage generation circuit, including a CTAT current generation circuit; a PTAT-type voltage generation circuit including a first branch including first and second series-connected transistors, the front surface gates of the first and second transistors being connected to the conduction node of the second transistor opposite to the first transistor; a third diode-assembled transistor having a conduction node connected to an output node of the PTAT voltage generation circuit and having its other conduction node forming a reference voltage supply node; and a current mirror; wherein the first and second transistors are of LVT type and the third transistor is of RVT type.

5. 发明申请

US20170131735A1 APPARATUS AND METHODS FOR VOLTAGE REGULATION 审中-公开
公开(公告)号：US20170131735A1
公开(公告)日：2017-05-11
申请号：US15415270
申请日：2017-01-25
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Florinel G. Balteanu , Jakub F. Pingot , Peter Harris Robert Popplewell
IPC分类号： G05F3/26
CPC分类号： H02M3/158 , G05F1/56 , G05F3/242 , G05F3/262 , H01L21/823475 , H01L23/528 , H01L27/0629 , H03F3/189 , H03F3/20 , H04B1/40 , Y10T29/41
摘要： Apparatus and methods for voltage regulation are provided. In some implementations, a voltage regulator circuit includes a field-effect transistor including a source that receives a battery voltage from an input node and a drain coupled to an output node, an amplifier including an output coupled to a gate of the field-effect transistor, and a voltage generator that receives the battery voltage from the input node and provides a reference voltage and one or more bias voltages to the amplifier. The voltage generator controls the amplifier to operate the voltage regulator circuit in a regulation mode or in a bypass mode based on a voltage level of the battery voltage. The amplifier and the field-effect transistor regulate the battery voltage in the regulation mode to provide a regulated voltage at the output node, and the amplifier turns on the field-effect transistor in the bypass mode to provide a bypass voltage substantially equal to the battery voltage at the output node.

6. 发明授权

US09639107B2 Ultra low power temperature insensitive current source with line and load regulation 有权
公开(公告)号：US09639107B2
公开(公告)日：2017-05-02
申请号：US14662615
申请日：2015-03-19
申请人： The Regents of The University of Michigan
发明人： David T. Blaauw , Dennis Sylvester , Myungjoon Choi , Inhee Lee , Taekwang Jang
IPC分类号： G05F3/16 , G05F1/46 , G05F1/575 , G05F3/24
CPC分类号： G05F3/16 , G05F1/468 , G05F1/575 , G05F3/242
摘要： A temperature insensitive sub-nA current reference is presented with pA-range power overhead. The main concept is to linearly reduce the gate voltage of a sub-threshold-biased MOSFET as temperature increases, in order to compensate for exponential dependence of drain current on temperature. For example, a MOSFET-only, 20 pA, 780 ppm/° C. current reference that consumes 23 pW is disclosed, marking the lowest reported power among current references. The circuit exploits sub-threshold-biased MOSFETs and a complementary-to-absolute temperature (CTAT) gate voltage to compensate for temperature dependency. The design shows high immunity to supply voltage of 0.58%/V and a load sensitivity of 0.25%/V.

7. 发明授权

US09613681B2 Voltage generation circuit 有权
公开(公告)号：US09613681B2
公开(公告)日：2017-04-04
申请号：US15056600
申请日：2016-02-29
申请人： SK hynix Inc.
发明人： Hyun Kyu Park
IPC分类号： G11C5/14 , G11C11/4099 , G05F3/24 , G05F3/16
CPC分类号： G05F3/16 , G05F3/242 , G05F3/247 , G11C5/147 , G11C11/4074 , G11C16/30
摘要： A voltage generation circuit may include: a main code table suitable for outputting a main code based on an operation signal; a main voltage generator suitable for generating a main voltage corresponding to the main code; a trimming module suitable for comparing the main voltage with a target voltage to output a trimming signal; a trimming code table suitable for outputting a trimming code corresponding to the trimming signal; a code determination module suitable for outputting the main code and the trimming code when the trimming code is determined to be valid, and outputting the main code and a output code when the trimming code is determined to be invalid; and an operation voltage generator suitable for outputting an operation voltage based on the main code and a code selected from the trimming code and the substitute code.

8. 发明授权

US09590504B2 Flipped gate current reference and method of using 有权
标题翻译：翻转栅极电流参考和使用方法
公开(公告)号：US09590504B2
公开(公告)日：2017-03-07
申请号：US14518638
申请日：2014-10-20
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Mohammad Al-Shyoukh , Alexander Kalnitsky
IPC分类号： G05F3/24 , G05F3/26 , G05F3/20 , H02M3/158
CPC分类号： G05F1/46 , G05F3/242 , H02M3/158
摘要： A current reference includes a tracking voltage generator. The tracking voltage generator includes a flipped gate transistor and a first transistor, the first transistor having a first leakage current, wherein the first transistor is connected with the flipped gate transistor in a Vgs subtractive arrangement. The tracking voltage generator further includes an output node configured to output a tracking voltage; and a second transistor connected to the output node, the second transistor having a second leakage current. The current reference further includes an amplifier configured to receive the tracking voltage and to output an amplified signal. The current reference further includes a control transistor configured to receive the amplified signal and to conduct a reference current therethrough. The current reference further includes a control resistor connected in series with the control transistor.
摘要翻译：电流基准包括跟踪电压发生器。跟踪电压发生器包括翻转栅晶体管和第一晶体管，第一晶体管具有第一泄漏电流，其中第一晶体管以Vgs减法排列与翻转栅晶体管连接。跟踪电压发生器还包括被配置为输出跟踪电压的输出节点; 以及连接到所述输出节点的第二晶体管，所述第二晶体管具有第二漏电流。电流参考还包括被配置为接收跟踪电压并输出放大信号的放大器。电流参考还包括控制晶体管，其被配置为接收放大的信号并且通过其传导参考电流。电流参考还包括与控制晶体管串联连接的控制电阻器。

9. 发明授权

US09442509B2 Electronic circuit with self-calibrated PTAT current reference and method for actuating the same 有权
标题翻译：具有自校准PTAT电流参考的电子电路及其驱动方法
公开(公告)号：US09442509B2
公开(公告)日：2016-09-13
申请号：US14558839
申请日：2014-12-03
申请人： The Swatch Group Research and Development Ltd
发明人： Arnaud Casagrande , Jean-Luc Arend
IPC分类号： G05F1/10 , G05F3/26 , G05F3/24
CPC分类号： G05F3/262 , G05F3/242
摘要： The electronic circuit with a self-calibrated PTAT current reference includes a PTAT current generator dependent on at least one integrated resistor for supplying a PTAT output current. It further includes a reference current generator dependent on at least one switched capacitor resistor, for supplying a reference current. The reference current and the PTAT output current are compared in a comparator so as to digitally adapt the programmable integrated resistor, or to digitally adapt the dimensional ratio of the transistors of a current mirror in the PTAT current generator, to supply the adapted PTAT output current.
摘要翻译：具有自校准PTAT电流参考的电子电路包括取决于至少一个用于提供PTAT输出电流的集成电阻器的PTAT电流发生器。它还包括一个参考电流发生器，它取决于至少一个开关电容电阻器，用于提供参考电流。参考电流和PTAT输出电流在比较器中进行比较，以便对可编程集成电阻进行数字调适，或数字调整PTAT电流发生器中的电流镜的晶体管的尺寸比，以提供适配的PTAT输出电流。

10. 发明申请

US20160094124A1 FLIPPED GATE CURRENT REFERENCE AND METHOD OF USING 有权
标题翻译：襟翼电流参考和使用方法
公开(公告)号：US20160094124A1
公开(公告)日：2016-03-31
申请号：US14518638
申请日：2014-10-20
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Mohammad AL-SHYOUKH , Alexander KALNITSKY
IPC分类号： H02M3/158
CPC分类号： G05F1/46 , G05F3/242 , H02M3/158
摘要： A current reference includes a tracking voltage generator. The tracking voltage generator includes a flipped gate transistor and a first transistor, the first transistor having a first leakage current, wherein the first transistor is connected with the flipped gate transistor in a Vgs subtractive arrangement. The tracking voltage generator further includes an output node configured to output a tracking voltage; and a second transistor connected to the output node, the second transistor having a second leakage current. The current reference further includes an amplifier configured to receive the tracking voltage and to output an amplified signal. The current reference further includes a control transistor configured to receive the amplified signal and to conduct a reference current therethrough. The current reference further includes a control resistor connected in series with the control transistor.
摘要翻译：电流基准包括跟踪电压发生器。跟踪电压发生器包括翻转栅晶体管和第一晶体管，第一晶体管具有第一泄漏电流，其中第一晶体管以Vgs减法排列与翻转栅晶体管连接。跟踪电压发生器还包括被配置为输出跟踪电压的输出节点; 以及连接到所述输出节点的第二晶体管，所述第二晶体管具有第二漏电流。电流参考还包括被配置为接收跟踪电压并输出放大信号的放大器。电流参考还包括控制晶体管，其被配置为接收放大的信号并且通过其传导参考电流。电流参考还包括与控制晶体管串联连接的控制电阻器。

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