专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09779836B2 Method for controlling magnetic multi-domain state 有权
公开(公告)号：US09779836B2
公开(公告)日：2017-10-03
申请号：US15125326
申请日：2014-03-12
申请人： Institute of Microelectronics, Chinese Academy of Sciences
发明人： Chong Bi , Shibing Long , Ming Liu
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858 , G11C11/1675 , G11C11/18 , G11C11/5607 , G11C19/0808 , G11C19/0816 , G11C19/0825 , G11C19/0841 , G11C19/085
摘要： The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an additional external magnetic field having a magnetic field strength of 0 to 4×105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and keeps stable when the current is removed. Such a method may be used for magnetic memory or spin-logic device to implement a nonvolatile multi-valued storage, multi-bits logic operation, or neuromorphic computing.

2. 发明申请

US20170169898A1 MAGNETIC DEVICE, SKYRMION MEMORY, SKYRMION MEMORY-DEVICE, SOLID-STATE ELECTRONIC SKYRMION-DEVICE, DATA-STORAGE DEVICE, DATA PROCESSING AND TRANSFERRING DEVICE 有权
公开(公告)号：US20170169898A1
公开(公告)日：2017-06-15
申请号：US15391860
申请日：2016-12-28
申请人： RIKEN
发明人： Naoto NAGAOSA , Wataru KOSHIBAE , Junichi IWASAKI , Masashi KAWASAKI , Yoshinori TOKURA , Yoshio KANEKO
IPC分类号： G11C19/08
CPC分类号： G11C19/085 , G11B5/65 , G11C11/16 , G11C11/1673 , G11C11/1675 , G11C11/18 , G11C19/0841 , G11C19/0858 , G11C19/0866 , H01F10/08 , H01L27/105 , H01L43/08
摘要： Provided is a skyrmion memory circuit capable of circularly transferring a magnetic element skyrmion, comprising one or more current paths in a magnet having a closed-path pattern that are provided surrounding an end region including an end portion of the magnet in a plane of the magnet with the closed-path pattern, and applying current between an outer terminal connected to an outer circumferential portion of the closed-path pattern and an inner circumference electrode connected to an inner circumferential portion of the closed-path pattern, transferring the skyrmion in a direction substantially perpendicular to the direction of the applied current, and circulating the skyrmion in the magnet with the closed-path pattern.

3. 发明申请

US20170092374A1 METHOD FOR CONTROLLING MAGNETIC MULTI-DOMAIN STATE 有权
公开(公告)号：US20170092374A1
公开(公告)日：2017-03-30
申请号：US15125326
申请日：2014-03-12
申请人： Institute of Microelectronics, Chinese Academy of Sciences
发明人： Chong Bi , Shibing Long , Ming Liu
IPC分类号： G11C19/08
CPC分类号： G11C19/0858 , G11C11/1675 , G11C11/18 , G11C11/5607 , G11C19/0808 , G11C19/0816 , G11C19/0825 , G11C19/0841 , G11C19/085
摘要： The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an external magnetic field having a magnetic field strength of 0 to 4×105 A/m to regulate magnetization state of the magnetic thin film; wherein the current is configured to drive movements of a magnetic domain of the magnetic multi-domain states in the magnetic thin film, and the external magnetic field is configured to regulate generation of new magnetic domain in the magnetic thin film and state of the magnetic domain during the movement, so that the magnetic thin film is in a stable magnetic multi-domain state. Such a multi-domain state can't be affected by a higher or lower current and may be kept to be stable when the current is removed. Such a method may be used for current magnetic memory and to operate the magnetization stage of the spin-logic device in the future to implement a nonvolatile multi-valued storage and multi-bits logic operation.

4. 发明授权

US08750013B1 Racetrack memory with low-power write 失效
标题翻译：跑道内存低功耗
公开(公告)号：US08750013B1
公开(公告)日：2014-06-10
申请号：US13968924
申请日：2013-08-16
申请人： International Business Machines Corporation
发明人： David W. Abraham , Anthony J. Annunziata
IPC分类号： G11C19/00 , G11C19/08 , G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C19/0858 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： Methods for writing include applying a current pulse to a racetrack memory medium to position a domain in proximity to a thermally triggered magnon source in contact with the racetrack memory medium; activating a heat source/sink in contact with the magnon source to create a thermal gradient in the magnon source, generating a magnon flow in the magnon source; and changing a magnetization in the racetrack memory medium by spin torque transfer from the magnon flow.
摘要翻译：用于写入的方法包括将电流脉冲施加到跑道存储介质以将结构域置于与跑道存储介质接触的热触发磁通源附近; 激活与磁子源接触的热源/吸收器，以在磁子源中产生热梯度，在磁子源中产生磁子流; 以及通过从磁通流的旋转转矩传递来改变跑道存储介质中的磁化。

5. 发明授权

US08750012B1 Racetrack memory with low-power write 失效
标题翻译：跑道内存低功耗
公开(公告)号：US08750012B1
公开(公告)日：2014-06-10
申请号：US13734642
申请日：2013-01-04
申请人： International Business Machines Corporation
发明人： David W. Abraham , Anthony J. Annunziata
IPC分类号： G11C19/00 , G11C19/08 , G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C19/0858 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： Racetrack memory units and methods for writing include a racetrack memory medium; a heat source/sink configured to change temperature according to an applied current; and a magnon source material in contact with the racetrack memory medium and the heat source/sink, such that a temperature of the heat source/sink causes a magnon flow in the magnon source material that injects a domain wall in the racetrack memory medium.
摘要翻译：赛马记忆单元和写入方法包括跑道记忆介质; 配置为根据施加的电流改变温度的热源/汇流体; 以及与跑道记忆介质和热源/吸收器接触的磁源材料，使得热源/吸收器的温度导致在跑道存储介质中注入畴壁的磁子源材料中的磁通流。

6. 发明授权

US07791952B2 Memory device architectures and operation 有权
标题翻译：内存设备架构和操作
公开(公告)号：US07791952B2
公开(公告)日：2010-09-07
申请号：US11699954
申请日：2007-01-30
申请人： Frankie F. Roohparvar
发明人： Frankie F. Roohparvar
IPC分类号： G11C16/04
CPC分类号： G11C16/06 , G06F12/0246 , G06F12/04 , G06F2212/2022 , G11C16/16 , G11C19/0858
摘要： Non-volatile memory devices logically organized to have erase blocks of at least two different sizes provide for concurrent erasure of multiple physical blocks of memory cells, while providing for individual selection of those physical blocks for read and program operations. In this manner, data expected to require frequent updating can be stored in locations corresponding to first erase blocks having a first size while data expected to require relatively infrequent updating can be stored in locations corresponding to second erase blocks larger than the first erase blocks. Storing data expected to require relatively more frequent updating in smaller logical memory blocks facilitates a reduction in unnecessary erasing of memory cells. In addition, by providing for larger logical memory blocks for storing data expected to require relatively less frequent updating, efficiencies can be obtained in erasing larger quantities of memory cells concurrently.
摘要翻译：逻辑组织为具有至少两个不同大小的擦除块的非易失性存储器件提供对存储器单元的多个物理块的并发擦除，同时提供用于读取和编程操作的那些物理块的单独选择。以这种方式，预期需要频繁更新的数据可以存储在与具有第一尺寸的第一擦除块相对应的位置中，而期望要求相对不频繁更新的数据可以存储在对应于大于第一擦除块的第二擦除块的位置中。存储期望在较小逻辑存储器块中需要相对更频繁更新的数据有助于减少存储器单元的不必要擦除。此外，通过提供用于存储期望要求相对较少频繁更新的数据的较大逻辑存储块，可以在同时擦除较大量的存储器单元中获得效率。

7. 发明授权

US5014239A Magnetic bubble generator using plural conductors with common current source 失效
标题翻译：使用具有共同电流源的多个导体的磁性气泡发生器
公开(公告)号：US5014239A
公开(公告)日：1991-05-07
申请号：US308081
申请日：1989-02-09
申请人： Masatoshi Takeshita , Toshihiro Sato , Takashi Toyooka , Ryo Suzuki
发明人： Masatoshi Takeshita , Toshihiro Sato , Takashi Toyooka , Ryo Suzuki
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： In a magnetic bubble generator having an ion-implanted track (1), a conductor pattern is composed of hairpin conductor patterns (5, 6) of two layers with an insulating layer (12) interlaid, and a part of intersection of the fore end parts of the gaps of these hairpin conductor patterns (5,6) is positioned in the vicinity of a cusp (4) of the ion-implanted track (1). The hairpin conductors may be electrically connected to each other and may be supplied by a common source. Thereby an error to be caused by a generated bubble stretching so much as to be divided into a plurality of pieces can be prevented, and the bubble can be generated by a small current pulse, while the amplitude margin thereof is enlarged.
摘要翻译：在具有离子注入轨道（1）的磁性气泡发生器中，导体图案由两层的发夹导体图案（5,6）组成，其中包含绝缘层（12），并且前端的一部分交叉这些发夹导体图案（5,6）的间隙的一部分位于离子注入轨道（1）的尖点（4）附近。发夹导体可以彼此电连接并且可以由公共源提供。因此，可以防止由产生的气泡拉伸而被分成多个部分引起的误差，并且可以通过小的电流脉冲产生气泡，同时其幅度裕度被扩大。

8. 发明授权

US4926377A Magnetic memory device using a deflected in-plane magnetic field 失效
标题翻译：使用偏转的平面内磁场的磁存储器件
公开(公告)号：US4926377A
公开(公告)日：1990-05-15
申请号：US392863
申请日：1989-08-11
申请人： Yasuharu Hidaka
发明人： Yasuharu Hidaka
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858 , G11C19/0866
摘要： In a magnetic memory device for use in selectively carrying out a write-in operation and a readout operation of a pair of vertical Bloch lines as an information carrier in a domain wall of a stripe domain extended along a longitudinal direction, a deflected in-plane magnetic field is applied to an end portion of the stripe domain and deflected relative to the longitudinal direction at an angle within an angle range by the use of a pair of magnetic units. The deflected in-plane magnetic field serves to stably hold a single Bloch line to a predetermined flank wall of the stripe domain during the write-in operation or to stably separate three Bloch lines from one another during the readout operation. Such application of the deflected in-plane magnetic field also serves to smoothly propagate each Bloch line.
摘要翻译：在用于选择性地执行一对垂直布洛赫线的写入操作和读取操作的磁存储器件中，作为信息载体在沿着纵向方向延伸的条带域的域壁中，偏转的平面内磁场被施加到条状域的端部并且通过使用一对磁性单元以角度范围内的角度相对于纵向方向偏转。偏转的面内磁场用于在写入操作期间将单个Bloch线稳定地保持到条状域的预定侧壁，或者在读出操作期间将三个Bloch线彼此稳定地分离。偏转的平面内磁场的这种应用也用于平滑地传播每个Bloch线。

9. 发明授权

US4881198A Duplicator in a magnetic bubble memory and process for duplicating bubbles therein 失效
标题翻译：磁记忆体中的复制器和用于在其中复制气泡的过程
公开(公告)号：US4881198A
公开(公告)日：1989-11-14
申请号：US320860
申请日：1989-03-06
申请人： Jean-Marc Fedeli , Joel Magnin
发明人： Jean-Marc Fedeli , Joel Magnin
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0858
摘要： A duplicator in a magnetic bubble memory with non-implanted patterns, a process for realizing the duplicator and a serial - parallel magnetic bubble memory having at least one of the aforementioned duplicators are disclosed. In a magnetic bubble memory having a first group of aligned non-implanted patterns and a second group of aligned non-implanted patterns, the duplicator according to the invention is characterized in that it comprises an extension conductor and a breaking conductor, the extension conductor linking the first and second groups of patterns, the breaking conductor being positioned transversely with respect to the extension conductor, the geometry of the end pattern of the first group of patterns being such that the duplication position is a stable position and the geometry of the patterns of the second group adjacent the axis of the first group being such that the reception position of the duplicated bubble is a stable position.
摘要翻译：公开了一种具有非植入图案的磁性气泡存储器中的复制器，用于实现复印机的过程和具有上述复制器中的至少一个的串行 - 并行磁性气泡存储器。在具有第一组对准非植入图案和第二组对准非植入图案的磁性气泡存储器中，根据本发明的复印机的特征在于其包括延伸导体和断裂导体，延伸导体连接第一和第二组图案，断开导体相对于延伸导体横向定位，第一组图案的端部图案的几何形状使得复制位置是稳定位置，并且图案的几何形状邻近第一组的轴的第二组使得复制的气泡的接收位置是稳定的位置。

10. 发明授权

US4734884A Magnetic bubble memory system with function of protecting specific storage area of bubble memory from rewriting 失效
标题翻译：具有保护气泡存储器的特定存储区域不具有重写功能的磁性气泡存储系统
公开(公告)号：US4734884A
公开(公告)日：1988-03-29
申请号：US734606
申请日：1985-05-16
申请人： Tatsuhiko Kohno , Kazutoshi Yoshida
发明人： Tatsuhiko Kohno , Kazutoshi Yoshida
IPC分类号： G11C11/14 , G06F12/14 , G11C19/08
CPC分类号： G11C19/0883 , G06F12/14 , G06F12/1433 , G11C19/0858 , G11C19/0866
摘要： A magnetic bubble memory system with a write protecting function is disclosed. In a power on reset mode or initiallizing mode of an information handling system including the bubble memory system, a bubble memory controller directs to and stores in its own memory, an information representative of a write protecting range for a bubble memory device, from a hidden memory region of the bubble memory device. The bubble memory controller compares the write protecting range to the information designating the address range of the bubble memory device in which a new information is to be written, in response to the write command from a host central processing unit. As a result of the comparison, if the both address ranges overlap each other, the bubble memory controller will execute the write protection and generate a write protection error message for the host CPU.
摘要翻译：公开了一种具有写保护功能的磁气泡存储系统。在包括气泡存储器系统的信息处理系统的上电复位模式或初始化模式下，气泡存储器控制器指向并存储在其自己的存储器中，代表气泡存储器件的写保护范围的信息从隐藏的气泡存储器件的存储区域。响应于来自主机中央处理单元的写命令，气泡存储器控制器将写保护范围与指定要写入新信息的气泡存储器件的地址范围的信息进行比较。作为比较的结果，如果两个地址范围彼此重叠，则气泡存储器控制器将执行写保护并且为主机CPU产生写保护错误消息。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式