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1. 发明授权

US09922673B2 Magnetoresistance element with improved response to magnetic fields 有权
公开(公告)号：US09922673B2
公开(公告)日：2018-03-20
申请号：US14529564
申请日：2014-10-31
申请人： Allegro MicroSystems, LLC
发明人： Paolo Campiglio , Bryan Cadugan , Claude Fermon , Rémy Lassalle-Balier
IPC分类号： G11B5/39 , G01R33/09 , H01F10/32 , H01L43/08 , G01R33/00 , H01L43/02 , H01L43/10 , H01L43/12 , H01F41/30
CPC分类号： G11B5/3932 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/39 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F41/306 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/41
摘要： A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

2. 发明申请

US20150192649A1 Magnetoresistance Element with an Improved Seed Layer to Promote an Improved Response to Magnetic Fields 有权
标题翻译：具有改进的种子层的磁阻元件以促进对磁场的改善的响应
公开(公告)号：US20150192649A1
公开(公告)日：2015-07-09
申请号：US14591213
申请日：2015-01-07
申请人： Allegro MicroSystems, LLC
发明人： Cyril Dressler , Claude Fermon , Myriam Pannetier-Lecoeur , Marie-Claire Cyrille , Paolo Campiglio
IPC分类号： G01R33/09 , G01R33/00
CPC分类号： G11B5/3932 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/39 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F41/306 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/41
摘要： A magnetoresistance element has a seed layer that promotes an increased magnetic anisotropy of layers of the magnetoresistance element above the seed layer structure.
摘要翻译：磁阻元件具有种子层，其在种子层结构之上促进磁阻元件的层的增加的磁各向异性。

3. 发明授权

US08012771B2 Method for manufacturing magnetic field detection devices and devices therefrom 失效
标题翻译：用于制造磁场检测装置和装置的方法
公开(公告)号：US08012771B2
公开(公告)日：2011-09-06
申请号：US12926284
申请日：2010-11-08
申请人： Daniele Pullini , Brunetto Martorana , Piero Perlo
发明人： Daniele Pullini , Brunetto Martorana , Piero Perlo
IPC分类号： H01L43/10 , H01L29/82
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/06 , H01F10/3227 , H01F10/3254 , H01F10/3268 , H01F41/301 , H01F41/306 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A method for manufacturing magnetic field detection devices comprises the operations of manufacturing a magneto-resistive element comprising regions with metallic conduction and regions with semi-conductive conduction. The method comprises the following operations: forming metallic nano-particles to obtain regions with metallic conduction; providing a semiconductor substrate; and applying metallic nano-particles to the porous semiconductor substrate to obtain a disordered mesoscopic structure. A magnetic device comprises a spin valve, which comprises a plurality of layers arranged in a stack which in turn comprises at least one free magnetic layer able to be associated to a temporary magnetisation (MT), a spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP). The spacer element is obtained by means of a mesoscopic structure of nanoparticles in a metallic matrix produced in accordance with the inventive method for manufacturing magneto-resistive elements.
摘要翻译：制造磁场检测装置的方法包括制造包含具有金属导电区域和具有半导电传导区域的磁阻元件的操作。该方法包括以下操作：形成金属纳米颗粒以获得具有金属导电性的区域; 提供半导体衬底; 并将金属纳米颗粒施加到多孔半导体衬底以获得无序的介观结构。磁性装置包括自旋阀，其包括以堆叠方式布置的多个层，所述多个层又包括至少一个能够与临时磁化（MT）相关的自由磁性层，间隔层和永久磁性层永久磁化（MP）。借助于根据用于制造磁阻元件的本发明方法制造的金属基体中的纳米颗粒的介观结构，获得间隔元件。

4. 发明申请

US20100177561A1 MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPERATING AND FABRICATING THE SAME 有权
标题翻译：具有非线性光纤接触的存储单元及其操作和制造方法
公开(公告)号：US20100177561A1
公开(公告)日：2010-07-15
申请号：US12352364
申请日：2009-01-12
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/14 , G11C7/00 , H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/329 , H01F41/306 , H01F41/307 , H01L27/228 , Y10S977/70
摘要： A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
摘要翻译：提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

5. 发明授权

US07248446B2 Magnetoresistive element using an organic nonmagnetic layer 有权
标题翻译：使用有机非磁性层的磁阻元件
公开(公告)号：US07248446B2
公开(公告)日：2007-07-24
申请号：US10306384
申请日：2002-11-27
申请人： Eric L. Granstrom
发明人： Eric L. Granstrom
IPC分类号： G11B5/31
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F41/306 , H01F41/307
摘要： A magnetoresistive element has two magnetic layers and a nonmagnetic middle layer having organic molecules disposed between the two magnetic layers. The middle layer is thinner than 5 nm (50 Å). The magnetoresistive element exhibits a magnetoresistive effect as a function of the relative alignment of magnetizations of the first and the second magnetic layers and can be used in a magnetoresistive sensor in the based on GMR or TMR.
摘要翻译：磁阻元件具有两个磁性层和在两个磁性层之间设置有有机分子的非磁性中间层。中间层比5nm（50）薄。磁阻元件作为第一和第二磁性层的磁化的相对取向的函数呈现磁阻效应，并且可以用于基于GMR或TMR的磁阻传感器中。

6. 发明申请

US20060222112A1 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效
标题翻译：使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性
公开(公告)号：US20060222112A1
公开(公告)日：2006-10-05
申请号：US11096636
申请日：2005-03-31
申请人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
IPC分类号： H04L27/06
CPC分类号： B82Y25/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F41/306 , H01L43/08 , H01L43/12
摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.
摘要翻译：磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。

7. 发明申请

US20020012206A1 THIN FILM CONDUCTOR LAYER, MAGNETORESISTIVE ELEMENT USING THE SAME AND METHOD OF PRODUCING THIN FILM CONDUCTOR LAYER 有权
标题翻译：薄膜导体层，使用它的磁阻元件和制造薄膜导体层的方法
公开(公告)号：US20020012206A1
公开(公告)日：2002-01-31
申请号：US09336300
申请日：1999-06-21
发明人： HIROYUKI KANNO
IPC分类号： G11B005/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/40 , G11B2005/3996 , H01F10/324 , H01F41/306
摘要： In a magnetoresistive element, deposition of a conductor layer in a DC magnetron sputtering apparatus causes application of tensile stress to the conductor layer, causing the problem of readily producing separation of the conductor layer. In the present invention, a conductor layer is formed so that the crystal face spacing in the direction perpendicular to the film plane is larger than the crystal face spacing of a bulk material. This permits application of compression stress to the conductor layer, preventing separation of the conductor layer.
摘要翻译：在磁阻元件中，在DC磁控管溅射装置中的导体层的沉积导致对导体层施加拉伸应力，导致容易产生导体层分离的问题。在本发明中，形成导体层，使得垂直于膜平面的方向的晶面间距大于散装材料的晶面间距。这允许对导体层施加压缩应力，防止导体层分离。

8. 发明授权

US09804234B2 Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields 有权
公开(公告)号：US09804234B2
公开(公告)日：2017-10-31
申请号：US14591213
申请日：2015-01-07
申请人： Allegro MicroSystems, LLC
发明人： Cyril Dressler , Claude Fermon , Myriam Pannetier-Lecoeur , Marie-Claire Cyrille , Paolo Campiglio
IPC分类号： G11B5/39 , G01R33/09 , G01R33/00 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , H01F10/32 , H01F41/30
CPC分类号： G11B5/3932 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/39 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F41/306 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/41
摘要： A magnetoresistance element can have a substrate; a ferromagnetic seed layer consisting of a binary alloy of NiFe; and a first nonmagnetic spacer layer disposed under and directly adjacent to the ferromagnetic seed layer and proximate to the substrate, wherein the first nonmagnetic spacer layer is comprised of Ta or Ru. A method fabricating of fabricating a magnetoresistance element can include depositing a seed layer structure over a semiconductor substrate, wherein the depositing the seed layer structure includes depositing at least a ferromagnetic seed layer over the substrate. The method further can further include depositing a free layer structure over the seed layer structure, wherein the depositing the ferromagnetic seed layer comprises depositing the ferromagnetic seed layer in the presence of a motion along a predetermined direction and in the presence of a predetermined magnetic field having the same predetermined direction.

9. 发明授权

US09437809B2 Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same 有权
标题翻译：具有非磁性丝接触的存储单元及其操作和制造方法
公开(公告)号：US09437809B2
公开(公告)日：2016-09-06
申请号：US14290477
申请日：2014-05-29
申请人： Micron Technology, Inc.
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/32 , H01L27/22 , H01F41/30
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F10/329 , H01F41/306 , H01F41/307 , H01L27/228 , Y10S977/70
摘要： A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
摘要翻译：提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

10. 发明申请

US20150194597A1 Magnetoresistance Element With Improved Response to Magnetic Fields 有权
标题翻译：具有改善磁场响应的磁阻元件
公开(公告)号：US20150194597A1
公开(公告)日：2015-07-09
申请号：US14452783
申请日：2014-08-06
申请人： Allegro MicroSystems, LLC
发明人： Claude Fermon , Myriam Pannetier-Lecoeur , Marie-Claire Cyrille , Cyril Dressler , Paolo Campiglio
IPC分类号： H01L43/08 , H01L43/12 , H01L43/10 , H01L43/02
CPC分类号： G11B5/3932 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/39 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F41/306 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/41
摘要： A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
摘要翻译：磁阻元件具有双重固定布置，其具有两个反铁磁钉扎层，两个钉扎层和自由层。两个反铁磁钉扎层之一和自由层之间的间隔层具有被选择为允许两个反铁磁钉扎层中的一个的可控部分钉扎的材料。

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