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    • 3. 发明授权
    • Low work function materials for microminiature energy conversion and recovery applications
    • 用于微型能量转换和恢复应用的低功函数材料
    • US06563256B1
    • 2003-05-13
    • US09257336
    • 1999-02-25
    • Kevin R. ZavadilJudith A. RuffnerDonald B. King
    • Kevin R. ZavadilJudith A. RuffnerDonald B. King
    • H01K104
    • H01J1/142
    • Low work function materials are disclosed together with methods for their manufacture and integration with electrodes used in thermionic conversion applications (specifically microminiature thermionic conversion applications). The materials include a mixed oxide system and metal in a compositionally modulated structure comprised of localized discontinuous structures of material that are deposited using techniques suited to IC manufacture, such as rf sputtering or CVD. The structures, which can include layers are then heated to coalescence yielding a thin film that is both durable and capable of electron emission under thermionic conversion conditions used for microminiature thermionic converters. Using the principles of the invention, thin film electrodes (emitters and collectors) required for microconverter technology are manufactured using a single process deposition so as to allow for full fabrication integration consistent with batch processing, and tailoring of emission/collection properties. In the preferred embodiment, the individual layers include mixed BaSrCaO, scandium oxide and tungsten.
    • 公开了低功函数材料及其与用于热离子转换应用(特别是微型热离子转换应用)中的电极的制造和集成的方法。 这些材料包括混合氧化物系统和组成调制结构中的金属,其由使用适合于IC制造的技术例如射频溅射或CVD沉积的材料的局部不连续结构组成。 然后可以包括层的结构被加热到聚结,产生在用于微型热离子转换器的热离子转化条件下既耐用又能够电子发射的薄膜。 使用本发明的原理,使用单一工艺沉积来制造微转换器技术所需的薄膜电极(发射器和集电器),以便允许完全制造整合与批量处理一致,并且定制发射/收集特性。 在优选实施例中,各层包括混合的BaSrCaO,氧化钪和钨。
    • 5. 发明授权
    • Two-layer cathode for electron gun
    • 电子枪用双层阴极
    • US06362563B1
    • 2002-03-26
    • US09412962
    • 1999-10-05
    • Kuo-Ching ChouShu-Hsien LeeChin-Fu Tsai
    • Kuo-Ching ChouShu-Hsien LeeChin-Fu Tsai
    • H01J114
    • H01J1/142H01J1/28
    • A cathode for use in an electron gun includes a base metal comprising Ni as a principal component and a two-layer electron emissive material disposed on the base metal. The inner layer is comprised of an alkaline earth metal oxide and 1-30 wt. % W and may further include 0.1-5 wt. % of a rare earth metal oxide. The outer layer is comprised of an alkaline earth metal oxide and may further include 0.1-5 wt. % of a rare earth metal oxide. The outer electron emissive layer provides stability for the cathode. In the degassing and activation process, W and Ni react at high temperatures to form a Ni4W fine crystal structure. An intermediate layer, such as Ba2SiO4, is dispersed in the Ni4W fine crystal structure in operation. Free barium is produced in reactions between the various cathode components to provide a high current density for the cathode. The normalized electron emission current value of the cathode does not decrease with use, even over extended periods of operation. While W has heretofore been used as a reducing agent in impregnating cathodes as well as in the base metal, it has not heretofore been used in an outer layer of a cathode.
    • 用于电子枪的阴极包括以Ni作为主要成分的基体金属和设置在母材上的双层电子发射材料。 内层由碱土金属氧化物和1-30wt。 %W,并且还可以包括0.1-5wt。 %的稀土金属氧化物。 外层由碱土金属氧化物组成,并且还可以包含0.1-5wt。 %的稀土金属氧化物。 外部电子发射层为阴极提供稳定性。 在脱气和活化过程中,W和Ni在高温下反应形成Ni4W微晶结构。 中间层如Ba2SiO4在运行中分散在Ni4W细晶结构中。 在各种阴极组件之间的反应中产生游离的钡,以为阴极提供高电流密度。 阴极的归一化电子发射电流值即使在长时间的运行中也不会随着使用而减少。 尽管迄今为止W已经用作浸渍阴极以及贱金属中的还原剂,但是迄今为止还没有用于阴极的外层。
    • 6. 发明授权
    • Electron emission materials and components
    • 电子发射材料和组件
    • US06190579B1
    • 2001-02-20
    • US09435508
    • 1999-11-08
    • Garth W. Billings
    • Garth W. Billings
    • H01B102
    • H01B1/06B82Y10/00H01J1/14H01J1/142H01J1/144H01J1/148H01J1/304H01J2201/19
    • Electron emission materials consisting of carbides, borides, and oxides, and related mixtures and compounds, of Group IVB metals Hf, Zr, and Ti, Group IIA metals Be, Mg, Ca, Sr, and Ba, and Group IIIB metals Sc, Y, and lanthanides La through Lu are used in electrodes. The electron emission materials include ternary Group IVB-IIIB, IVB-IIA, and IIIB-IIA oxides and quaternary Group IVB-IIIB-IIA oxides. These electron emission materials are typically contained in a refractory metal matrix formed of tungsten, molybdenum, tantalum, rhenium, and their alloys, but may also be used by themselves. These materials and electrodes have high melting points, low vapor pressures, low work functions, high electrical and thermal conductivity, and high thermionic electron emission and field emission properties.
    • 由ⅣB族金属Hf,Zr和Ti,IIA族金属Be,Mg,Ca,Sr和Ba以及IIIB族金属组成的由碳化物,硼化物和氧化物组成的电子发射材料及相关混合物和化合物Sc,Y ,镧系元素La-Lu用于电极。 电子发射材料包括IVB-IIIB族,IVB-IIA族和IIIB-IIA族氧化物,IVB-IIIB-IIA族四元族氧化物。 这些电子发射材料通常包含在由钨,钼,钽,铼及其合金形成的难熔金属基体中,但也可以自己使用。 这些材料和电极具有高熔点,低蒸汽压力,低功函数,高导热性和高热电子发射和场发射性能。