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1. 发明申请

US20190051498A1 SUBSTRATE TREATING APPARATUS, SUBSTRATE TREATING METHOD, AND PLASMA GENERATING UNIT 审中-公开
公开(公告)号：US20190051498A1
公开(公告)日：2019-02-14
申请号：US15682858
申请日：2017-08-22
申请人： PSK INC.
发明人： Aram KIM
IPC分类号： H01J37/32
CPC分类号： H01J37/32339 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103
摘要： Disclosed are a substrate treating apparatus, a substrate treating method, and a plasma generating unit. The substrate treating apparatus includes a housing configured to provide a treatment space, in which a substrate is treated, a support unit configured to support a substrate in the treatment space, a plasma generating unit disposed outside the housing and configured to excite plasma from a gas and supply the excited plasma to the treatment space, and a controller, wherein the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through an electric wire, a second antenna wound around the plasma generating chamber and connected to the power source through an auxiliary electric wire, and a switch configured to switch on and off the auxiliary electric wire.

2. 发明授权

US09978593B2 Plasma processing device, plasma processing method and manufacturing method of electronic device 有权
公开(公告)号：US09978593B2
公开(公告)日：2018-05-22
申请号：US15462642
申请日：2017-03-17
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Tomohiro Okumura
IPC分类号： H01L21/02 , H01J37/32
CPC分类号： H01L21/02689 , H01J37/321 , H01J37/3211 , H01J37/32339 , H01J37/32449 , H01J2237/334 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H05H1/30
摘要： A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity.

3. 发明申请

US20170218536A1 APPARATUS FOR FABRICATING TWO-DIMENSIONAL LAYERED CHALCOGENIDE FILM 审中-公开
公开(公告)号：US20170218536A1
公开(公告)日：2017-08-03
申请号：US15488863
申请日：2017-04-17
申请人： G-FORCE NANOTECH LTD.
发明人： CHAO-HUI YEH , JEN-KUAN CHIU
IPC分类号： C30B29/46 , H01J37/32 , C23C16/448 , C30B25/10 , C23C16/48 , H01L21/02 , C23C16/30
CPC分类号： H01L21/02568 , C23C16/305 , C23C16/448 , C23C16/46 , C23C16/48 , C23C16/482 , C30B25/105 , C30B29/46 , C30B29/60 , H01J37/32321 , H01J37/32339 , H01J2237/3321 , H01L21/0262
摘要： A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

4. 发明申请

US20170213704A1 TOROIDAL PLASMA ABATEMENT APPARATUS AND METHOD 有权
公开(公告)号：US20170213704A1
公开(公告)日：2017-07-27
申请号：US15484072
申请日：2017-04-10
申请人： MKS Instruments, Inc.
发明人： Xing Chen , Ilya Pokidov , Feng Tian , Ken Tran , David Lam , Kevin W. Wenzel
IPC分类号： H01J37/32 , B01D53/32 , B01D53/76
CPC分类号： H01J37/32449 , B01D53/323 , B01D53/76 , B01D2257/2064 , H01J37/32339 , H01J37/32357 , H01J37/32458 , H01J37/32651 , H01J37/32669 , H01J37/32844 , H01J37/32935 , H01J2237/3321 , H01J2237/334 , H05H1/46 , H05H2001/4667 , H05H2245/121 , Y02C20/30
摘要： An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

5. 发明授权

US09691611B2 Method of fabricating two-dimensional layered chalcogenide film 有权
公开(公告)号：US09691611B2
公开(公告)日：2017-06-27
申请号：US14989848
申请日：2016-01-07
申请人： G-FORCE NANOTECH LTD.
发明人： Chao-Hui Yeh , Jen-Kuan Chiu
IPC分类号： H01L21/20 , H01L21/02 , C23C16/48 , C23C16/30 , C23C16/46 , H01J37/32 , C30B25/10 , C30B29/46 , C30B29/60
CPC分类号： H01L21/02568 , C23C16/305 , C23C16/448 , C23C16/46 , C23C16/48 , C23C16/482 , C30B25/105 , C30B29/46 , C30B29/60 , H01J37/32321 , H01J37/32339 , H01J2237/3321 , H01L21/0262
摘要： A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

6. 发明申请

US20170062183A1 PLASMA GENERATION APPARATUS 有权
标题翻译：等离子体发生装置
公开(公告)号：US20170062183A1
公开(公告)日：2017-03-02
申请号：US15247517
申请日：2016-08-25
申请人： DAIHEN Corporation
发明人： Michio TANIGUCHI , Shigeki AMADATSU
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/32339 , H01J37/32458 , H01J37/32513 , H01J37/3266 , H01J2237/327 , H01J2237/332 , H01J2237/334
摘要： An inductive-coupling plasma generator includes an electroconductive chamber with a toroidal-shaped electrical discharge space formed inside. The plasma generator also includes a high-frequency power source connected to the chamber. The power source is configured to cause a high-frequency current to flow through the chamber along a toroidal direction.
摘要翻译：电感耦合等离子体发生器包括在内部形成有环形放电空间的导电室。等离子体发生器还包括连接到腔室的高频电源。电源被配置为使得高频电流沿着环形方向流过腔室。

7. 发明申请

US20150318185A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ION BEAM ETCHING DEVICE, AND CONTROL DEVICE 有权
标题翻译：用于制造半导体器件，离子束蚀刻器件和控制器件的方法
公开(公告)号：US20150318185A1
公开(公告)日：2015-11-05
申请号：US14440110
申请日：2013-09-03
申请人： CANON ANELVA CORPORATION
发明人： Yoshimitsu KODAIRA , Yukito NAKAGAWA , Motozo KURITA
IPC分类号： H01L21/311 , H01J37/32 , H01L21/66 , H01L29/66 , H01L21/321 , H01L21/3105
CPC分类号： H01J37/321 , H01J37/32339 , H01J37/32422 , H01J37/3244 , H01J37/3266 , H01J37/32715 , H01J2237/334 , H01L21/31055 , H01L21/31116 , H01L21/31144 , H01L21/3212 , H01L21/32136 , H01L22/12 , H01L22/20 , H01L29/66545 , H01L29/6656 , H01L29/7833
摘要： A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step.By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrate 111 is corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamber 102 is caused to be different between a position facing a central portion in the plane of the substrate 111 and a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrate 111 and the etching rate in the outer peripheral portion in the substrate plane 111 are caused to be different.
摘要翻译：在CMP步骤之后的基板平面中存在膜厚度分布。该膜厚分布导致例如金属栅极的栅极阈值电压的变化，并导致元件特性的变化。本发明的目的是容易地改善通过该CMP步骤处理的膜厚度分布。通过在CMP步骤之后使用离子束蚀刻方法，校正衬底111的平面中的膜厚分布。更具体地，当进行离子束蚀刻时，等离子体产生室102中的等离子体密度在面向基板111的平面中的中心部分的位置和面向外周部分的位置之间变得不同，从而使基板111的平面的中央部的蚀刻速度和基板面111的外周部的蚀刻速度不同。

8. 发明申请

US20150279628A1 Open Plasma Lamp for Forming a Light-Sustained Plasma 有权
标题翻译：开放式等离子灯形成轻维持等离子体
公开(公告)号：US20150279628A1
公开(公告)日：2015-10-01
申请号：US14670210
申请日：2015-03-26
申请人： KLA-Tencor Corporation
发明人： Lauren Wilson , Anant Chimmalgi , Ilya Bezel , Anatoly Shchemelinin , Matthew Derstine , Gildardo Delgado
IPC分类号： H01J37/32
CPC分类号： H01J37/32339 , H01J37/32449 , H01J65/04
摘要： An open plasma lamp includes a cavity section. A gas input and gas output of the cavity section are arranged to flow gas through the cavity section. The plasma lamp also includes a gas supply assembly fluidically coupled to the gas input of the cavity section and configured to supply gas to an internal volume of the cavity section. The plasma lamp also includes a nozzle assembly fluidically coupled to the gas output of the cavity section. The nozzle assembly and cavity section are arranged such that a volume of the gas receives pumping illumination from a pump source, where a sustained plasma emits broadband radiation. The nozzle assembly is configured to establish a convective gas flow from within the cavity section to a region external to the cavity section such that a portion of the sustained plasma is removed from the cavity section by the gas flow.
摘要翻译：开放式等离子体灯包括空腔部分。空腔部分的气体输入和气体输出被布置成使气体流过空腔部分。等离子体灯还包括气体供应组件，其流体地耦合到空腔部分的气体输入并且被配置为将气体供应到空腔部分的内部容积。等离子体灯还包括流体耦合到空腔部分的气体输出的喷嘴组件。喷嘴组件和空腔部分布置成使得一定体积的气体从泵浦源接收泵送照明，其中持续等离子体发射宽带辐射。喷嘴组件被配置成建立从空腔部分内到空腔部分外部的区域的对流气流，使得通过气流将一部分持续等离子体从空腔部分移除。

9. 发明申请

US20150165752A1 METHOD AND DEVICE FOR PERMANENT BONDING OF WAFERS 审中-公开
标题翻译：用于永久粘结的方法和装置
公开(公告)号：US20150165752A1
公开(公告)日：2015-06-18
申请号：US14414795
申请日：2012-07-24
申请人： Thomas Plach , Kurt Hingerl , Markus Wimplinger , Christoph Flötgen
发明人： Thomas Plach , Kurt Hingerl , Markus Wimplinger , Christoph Flötgen
IPC分类号： B32B38/10 , B32B37/00 , H01J37/32
CPC分类号： B32B38/10 , B32B37/0046 , H01J37/32036 , H01J37/32082 , H01J37/32165 , H01J37/32339 , H01J37/32532 , H01J37/32798 , H01J2237/334 , H01L21/187 , H01L21/2007 , H01L21/67092
摘要： A method for bonding of a first contact area of a first substrate to a second contact area of a second substrate, the second substrate having a least one reaction layer, and a device for carrying out said method. The method comprises: (a) accommodating the substrates between a first electrode and a second electrode, or within a coil, (b) formation of a reservoir on the first contact area by exposing the first contact area to a plasma (c) at least partially filling of the reservoir with a first educt or a first group of educts, (d) contacting the first contact area with the second contact area for formation of a pre-bond interconnection, (e) forming a permanent bond between the first and second contact areas at least partially strengthened by the reaction of the first educt with a second educt which is contained in the reaction layer of the second substrate.
摘要翻译：一种用于将第一基板的第一接触区域与第二基板的第二接触区域接合的方法，所述第二基板具有至少一个反应层，以及用于执行所述方法的设备。该方法包括：（a）在第一电极和第二电极之间或线圈内容纳衬底，（b）通过将第一接触区域暴露于等离子体（c）至少形成第一接触区域上的储存器（d）使第一接触区域与第二接触区域接触以形成预接合互连，（e）在第一和第二组之间形成永久性接合接触区域通过第一离子束与第二离子束的反应至少部分地被增强，第二离子束包含在第二基底的反应层中。

10. 发明授权

US07867905B2 System and method for semiconductor processing 有权
标题翻译：用于半导体处理的系统和方法
公开(公告)号：US07867905B2
公开(公告)日：2011-01-11
申请号：US11443621
申请日：2006-05-31
申请人： Tue Nguyen , Tai Dung Nguyen , Craig Alan Bercaw
发明人： Tue Nguyen , Tai Dung Nguyen , Craig Alan Bercaw
IPC分类号： H01L21/44
CPC分类号： H01L21/67115 , H01J37/32009 , H01J37/32339 , H01L21/67248
摘要： Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.
摘要翻译：公开了利用处理室执行半导体处理的系统和方法; 适合重复触发的闪光灯; 以及耦合到闪光灯的控制输入以触发闪光灯的控制器。该系统可以在晶片处理中部署与闪光灯并联的固态等离子体源。

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