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1. 发明授权

US09728562B2 Manufacturing method and apparatus of low temperature polycrystalline silicon, and polycrystalline silicon 有权
公开(公告)号：US09728562B2
公开(公告)日：2017-08-08
申请号：US15088296
申请日：2016-04-01
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Jian Min
IPC分类号： H01L21/02 , H01L27/12
CPC分类号： H01L27/1285 , H01L21/02488 , H01L21/02532 , H01L21/02592 , H01L21/02675 , H01L21/02678 , H01L21/0268 , H01L21/02691
摘要： A manufacturing method and apparatus of low temperature polycrystalline silicon, and a polycrystalline silicon are provided. The manufacturing method of low temperature polycrystalline silicon includes forming an amorphous silicon layer on a substrate; scanning the amorphous silicon layer by using a laser to emit a strip-shaped laser beam to go through a mask which includes transmissive stripes and partially-transmissive stripes arranged alternately, to form low temperature fusion regions and high temperature fusion regions which are arranged alternately on the amorphous silicon layer; recrystallizing the amorphous silicon layer from the low temperature fusion regions to the high temperature fusion regions.

2. 发明申请

US20170186610A1 METHOD OF MANUFACTURING A SUBSTRATE HAVING A CRYSTALLIZED LAYER AND A LASER CRYSTALLIZING APPARATUS FOR THE SAME 审中-公开
公开(公告)号：US20170186610A1
公开(公告)日：2017-06-29
申请号：US15460612
申请日：2017-03-16
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： JOOWOAN CHO , BYOUNGHO CHEONG , BYOUNGKWON CHOO , JEONGKYUN NA , SANGHOON AHN , HYUNJIN CHO
IPC分类号： H01L21/02 , H01L29/16 , H01L29/66 , H01L29/04
CPC分类号： H01L21/02675 , B23K26/00 , B23K26/0608 , B23K26/0643 , B23K26/352 , H01L21/02532 , H01L21/02691 , H01L27/1285 , H01L29/04 , H01L29/16 , H01L29/1604 , H01L29/6675 , H01L29/66757 , Y02P70/605
摘要： A method of manufacturing a substrate includes: irradiating, along a first path, a laser beam emitted from a source onto a substrate, wherein the substrate includes a target layer of the laser beam, and wherein the substrate is disposed on a stage; and irradiating, along a second path, a portion the laser beam, which was emitted from the source and reached the target layer, by reflecting the laser beam back onto the target layer using a reflection mirror. An area of a second region of the target layer is greater than an area of a first region of the target layer, wherein the laser beam is irradiated along the second path in the second region, and the laser beam is irradiated along the first path in the first region.

3. 发明授权

US09687937B2 Laser annealing method and laser annealing apparatus 有权
公开(公告)号：US09687937B2
公开(公告)日：2017-06-27
申请号：US14664696
申请日：2015-03-20
申请人： V Technology Co., Ltd.
发明人： Koichi Kajiyama , Michinobu Mizumura
IPC分类号： H01L21/3205 , B23K26/00 , H01L21/02 , H01L21/268 , H01L29/66 , B23K26/08 , H01L27/12 , H01L21/67 , B23K103/00
CPC分类号： B23K26/352 , B23K26/0006 , B23K26/083 , B23K26/354 , B23K2103/56 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L21/67115 , H01L21/67259 , H01L27/1285 , H01L29/66765
摘要： In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.

4. 发明申请

US20170103876A1 PLASMA GENERATOR, ANNEALING DEVICE, DEPOSITION CRYSTALLIZATION APPARATUS AND ANNEALING PROCESS 有权
公开(公告)号：US20170103876A1
公开(公告)日：2017-04-13
申请号：US15035074
申请日：2015-11-13
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Xiangjun TIAN , Seiji FUJINO
IPC分类号： H01J37/32 , C23C16/52 , C23C16/50 , H01L21/02 , C23C16/24
CPC分类号： H01J37/32568 , C23C16/24 , C23C16/50 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32522 , H01J37/32541 , H01J37/32605 , H01J37/32752 , H01J2237/3321 , H01L21/02532 , H01L21/02592 , H01L21/02689 , H01L21/02691 , H05H1/46 , H05H2001/466
摘要： A plasma generator, a plasma annealing device, a deposition crystallization apparatus and a plasma annealing process are disclosed. The plasma generator includes: a gas chamber; a gas intake member configured to introduce a gas into the gas chamber; a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma; a cooling water circulation member configured to control a temperature of the plasma generator; and a plasma beam outlet disposed on a top face of the gas chamber. The plasma annealing device including the plasma generator can generate a plasma beam, which can be used in annealing to amorphous silicon and crystallize the amorphous silicon to polycrystalline silicon.

5. 发明授权

US09577114B2 Transistors, methods of forming transistors and display devices having transistors 有权
标题翻译：晶体管，形成晶体管的方法和具有晶体管的显示器件
公开(公告)号：US09577114B2
公开(公告)日：2017-02-21
申请号：US15147628
申请日：2016-05-05
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Jin-Woo Lee , Moo-Jin Kim
IPC分类号： H01L21/02 , H01L29/786 , H01L29/66 , H01L29/165 , H01L29/267 , H01L29/778 , H01L29/10 , H01L29/16 , H01L21/465 , H01L27/32 , H01L29/04 , H01L29/423
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02422 , H01L21/0245 , H01L21/02513 , H01L21/02527 , H01L21/02532 , H01L21/02592 , H01L21/02675 , H01L21/02691 , H01L21/465 , H01L27/3262 , H01L29/04 , H01L29/1054 , H01L29/1606 , H01L29/165 , H01L29/267 , H01L29/42356 , H01L29/66045 , H01L29/66431 , H01L29/66742 , H01L29/66757 , H01L29/66969 , H01L29/7781 , H01L29/7782 , H01L29/78684 , H01L29/7869
摘要： A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active layer pattern including silicon and graphene; a gate insulating layer disposed on the active layer pattern; a gate electrode disposed on the gate insulating layer; an insulating interlayer covering the active layer pattern and the gate electrode; and a source electrode and a drain electrode in contact with the active layer pattern.
摘要翻译：晶体管，显示器件和相关方法，所述晶体管包括衬底; 设置在所述衬底上的有源层图案，所述有源层图案包括硅和石墨烯; 设置在有源层图案上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 覆盖有源层图案和栅电极的绝缘夹层; 以及与有源层图案接触的源电极和漏电极。

6. 发明授权

US09564322B1 Method of excimer laser annealing 有权
标题翻译：准分子激光退火方法
公开(公告)号：US09564322B1
公开(公告)日：2017-02-07
申请号：US15163346
申请日：2016-05-24
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Gyoo Wan Han , Vladimir Tokarev , Je Kil Ryu
IPC分类号： H01L21/02
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02678 , H01L21/02686 , H01L21/02691
摘要： A method of excimer laser annealing includes generating a focused long line beam with a laser beam output from at least one laser source; and scanning the long line beam in a direction perpendicular to a long axis of the long line beam along a surface of an amorphous semiconductor film on a substrate. The long line beam has a normalized beam angular divergence half-width φ=arctan(tan θy/sin θ) that is less than a critical value φc, where θy represents a beam angular divergence half-width measured along the long axis of the long line beam on the surface of the amorphous semiconductor film, θ represents a mean incidence angle of the long line beam on the surface of the amorphous semiconductor film, and φc is approximately 30°.
摘要翻译：准分子激光退火的方法包括：从至少一个激光源输出的激光束产生聚焦的长线束; 并且沿着与长条线束的长轴垂直的方向沿着衬底上的非晶半导体膜的表面扫描长线束。长线光束具有小于临界值φc的归一化光束角度发散半角φ= arctan（tanθy/sinθ），其中θy表示沿长轴测量的光束角度发散半角在非晶半导体膜的表面上的线束，θ表示非线性半导体膜表面上的长线光束的平均入射角，φc约为30°。

7. 发明申请

US20160343569A1 METHOD FOR FORMING POLYSILICON 有权
标题翻译：形成聚硅氧烷的方法
公开(公告)号：US20160343569A1
公开(公告)日：2016-11-24
申请号：US15113972
申请日：2015-01-22
申请人： LASER SYSTEMS & SOLUTIONS OF EUROPE
发明人： Fulvio MAZZAMUTO
IPC分类号： H01L21/02
CPC分类号： H01L21/02675 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/02691
摘要： A method for forming polysilicon on a semiconductor substrate that include providing amorphous silicon on a semiconductor substrate, exposing at least an area of the amorphous silicon to a first laser beam and a second laser beam, characterized in that during exposing the area to the second laser beam no displacement of the laser beam relative to the area occurs. In addition, the use of such method for producing large grain polysilicon. In particular, the use of such method for producing vertical grain polysilicon. Further, the use of such method for producing sensors, MEMS, NEMS, Non Volatile Memory, Volatile memory, NAND Flash, DRAM, Poly Si contacts and interconnects.
摘要翻译：一种在半导体衬底上形成多晶硅的方法，包括在半导体衬底上提供非晶硅，将非晶硅的至少一个区域暴露于第一激光束和第二激光束，其特征在于，在将该区域暴露于第二激光器光束相对于该区域不发生激光束的位移。另外，采用这种方法生产大颗粒多晶硅。特别地，使用这种方法生产垂直晶粒多晶硅。此外，使用这种用于制造传感器，MEMS，NEMS，非易失性存储器，易失性存储器，NAND闪存，DRAM，多晶硅接触和互连的方法。

8. 发明申请

US20160336358A1 MANUFACTURING METHOD AND APPARATUS OF LOW TEMPERATURE POLYCRYSTALLINE SILICON, AND POLYCRYSTALLINE SILICON 有权
标题翻译：低温多晶硅和多晶硅的制造方法和装置
公开(公告)号：US20160336358A1
公开(公告)日：2016-11-17
申请号：US15088296
申请日：2016-04-01
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Jian Min
IPC分类号： H01L27/12
CPC分类号： H01L27/1285 , H01L21/02488 , H01L21/02532 , H01L21/02592 , H01L21/02675 , H01L21/02678 , H01L21/0268 , H01L21/02691
摘要： A manufacturing method and apparatus of low temperature polycrystalline silicon, and a polycrystalline silicon are provided. The manufacturing method of low temperature polycrystalline silicon includes forming an amorphous silicon layer on a substrate; scanning the amorphous silicon layer by using a laser to emit a strip-shaped laser beam to go through a mask which includes transmissive stripes and partially-transmissive stripes arranged alternately, to form low temperature fusion regions and high temperature fusion regions which are arranged alternately on the amorphous silicon layer; recrystallizing the amorphous silicon layer from the low temperature fusion regions to the high temperature fusion regions.
摘要翻译：提供了低温多晶硅和多晶硅的制造方法和装置。低温多晶硅的制造方法包括在基板上形成非晶硅层; 通过使用激光来扫描非晶硅层以发射带状激光束以通过包括交替布置的透射条纹和部分透射条纹的掩模，以形成交替地布置的低温熔融区域和高温熔融区域非晶硅层; 将非晶硅层从低温熔融区域重结晶到高温熔融区域。

9. 发明申请

US20160049522A1 Method for manufacturing semiconductor device 审中-公开
公开(公告)号：US20160049522A1
公开(公告)日：2016-02-18
申请号：US14756870
申请日：2015-10-23
申请人： Semiconductor Energy Laboratory Co., LTD.
发明人： Tomoaki Moriwaka
IPC分类号： H01L29/786 , H01L27/12 , H01L21/02
CPC分类号： H01L29/78618 , H01L21/02532 , H01L21/02592 , H01L21/02609 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/28518 , H01L27/1285 , H01L29/045 , H01L29/41733 , H01L29/458 , H01L29/78654
摘要： The invention relates to a method for forming a uniform silicide film using a crystalline semiconductor film in which orientation of crystal planes is controlled, and a method for manufacturing a thin film transistor with less variation in electric characteristics, which is formed over an insulating substrate using the silicide film. A semiconductor film over which a cap film is formed is irradiated with a laser to be crystallized under the predetermined condition, so that a crystalline semiconductor film including large grain crystals in which orientation of crystal planes is controlled in one direction is formed. The crystalline semiconductor film is used for silicide, whereby a uniform silicide film can be formed.

10. 发明授权

US09236254B2 Substrate having thin film and method of thin film formation 有权
标题翻译：具有薄膜的基板和薄膜形成方法
公开(公告)号：US09236254B2
公开(公告)日：2016-01-12
申请号：US14267090
申请日：2014-05-01
申请人： JOLED INC.
发明人： Kenichirou Nishida , Tomohiko Oda , Yui Saitou
IPC分类号： H01L21/36 , H01L21/02 , H01L21/268 , H01L29/04 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号： H01L21/02675 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/02683 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/66742 , H01L29/66765 , H01L29/786
摘要： A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film.
摘要翻译：薄膜形成方法包括：制备基底; 在衬底上形成薄膜; 以及通过用光束照射所述薄膜来使所述薄膜结晶，其中所述结晶包括以下步骤：通过在扫描第一光束时照射第一区域而将第一区域中的薄膜结晶成第一晶体薄膜所述基板，所述第一区域包括所述基板的边缘部分中的至少一个; 以及当切割基板时切割线通过的区域; 并且随后通过在扫描第二光束相对于衬底扫描至少第二区域的同时将第二区域中的薄膜结晶成第二晶体薄膜，并且该薄膜具有比第二光束更高的吸收比的第一晶体薄膜。

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