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1. 发明授权

US09464172B2 Alkali-developable curable composition, insulating thin film using the same, and thin film transistor 有权
标题翻译：碱显影性固化性组合物，使用其的绝缘薄膜和薄膜晶体管
公开(公告)号：US09464172B2
公开(公告)日：2016-10-11
申请号：US12746891
申请日：2008-12-05
申请人： Masahito Ide , Takao Manabe , Makoto Seino
发明人： Masahito Ide , Takao Manabe , Makoto Seino
IPC分类号： C07D251/32 , C07D251/34 , C08G77/388 , C08K5/3492 , C08L83/06 , G03F7/075 , H01L21/312 , H01L29/786 , H01L21/02 , H01L23/29 , H01L29/49 , H01L51/05 , C08K5/549 , H01L27/12
CPC分类号： C08G77/388 , C08K5/549 , G03F7/0755 , G03F7/0757 , H01L21/02126 , H01L21/02216 , H01L21/02219 , H01L21/02282 , H01L21/02343 , H01L21/02348 , H01L21/3122 , H01L23/296 , H01L27/1248 , H01L29/4908 , H01L29/78609 , H01L29/7869 , H01L51/052 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An object of the present invention is to provide a polysiloxane compound that can be developed in an aqueous alkali solution and can yield a cured product or thin film having superior heat-resistant transparency and insulating properties, a curable composition thereof, and a thin film transistor provided with a passivation layer or gate insulator using the same, and the present invention relates to a polysiloxane compound having at least one photopolymerizable functional group in a molecule thereof, and having at least one member selected from the group consisting of an isocyanuric acid backbone structure, a phenolic hydroxyl group and a carboxyl group within the same molecule, to a curable composition containing the polysiloxane compound, and to a cured product thereof.
摘要翻译：本发明的目的是提供一种可以在碱性水溶液中显影的聚硅氧烷化合物，并且可以得到具有优异的耐热透明性和绝缘性的固化产物或薄膜，其可固化组合物和薄膜晶体管设置有使用其的钝化层或栅极绝缘体，本发明涉及在其分子中具有至少一个可光聚合官能团的聚硅氧烷化合物，并且具有至少一种选自异氰脲酸主链结构，相同分子内的酚羟基和羧基，和其固化物。

2. 发明授权

US09012587B2 Photo-patternable dielectric materials and formulations and methods of use 有权
标题翻译：光刻图介质材料及配方及使用方法
公开(公告)号：US09012587B2
公开(公告)日：2015-04-21
申请号：US13861452
申请日：2013-04-12
申请人： International Business Machines Corporation
发明人： Robert David Allen , Phillip Joe Brock , Blake W. Davis , Qinghuang Lin , Robert Dennis Miller , Alshakim Nelson , Ratnam Sooriyakumaran
IPC分类号： C08G77/20 , H01B3/30 , C09D183/04 , C09D183/14 , H01L21/02 , H01L21/312 , H01L21/768
CPC分类号： H05K1/0326 , C09D183/04 , C09D183/14 , H01B3/307 , H01L21/02126 , H01L21/02216 , H01L21/3122 , H01L21/76802 , H01L21/76808 , H01L21/76814 , H05K2201/0162
摘要： Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.
摘要翻译：倍半硅氧烷聚合物，负色调可光图案化电介质配方中的倍半硅氧烷聚合物，使用含有倍半硅氧烷聚合物的负色调可光阴电介质配方形成结构的方法，以及由倍半硅氧烷聚合物制成的结构。

3. 发明申请

US20140217539A1 SEMICONDUCTOR OPTOELECTRONICS DEVICES 审中-公开
标题翻译：半导体光电器件
公开(公告)号：US20140217539A1
公开(公告)日：2014-08-07
申请号：US14249976
申请日：2014-04-10
申请人： Silecs Oy
发明人： Juha T. Rantala
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： A semiconductor device comprising a semiconductor substrate with a plurality of photo-diodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap filling polymer layer opposite to the photo-diodes and a second polymer arranged on the interconnect layers covers and planarizes and passivates the color filter layers. On top of the planarizing polymer there is a plurality of micro-lenses opposite to the color filters, and a third polymer layer is deposited on the micro-lenses for passivating the micro-lenses. According to the invention the polymer materials are comprised of a siloxane polymer which gives thermally and mechanically stable, high index of refraction, dense dielectric films exhibiting high-cracking threshold, low pore volume and pore size.
摘要翻译：一种半导体器件，包括具有布置在所述半导体衬底中的多个光电二极管的半导体衬底，所述多个光电二极管具有在所述光电二极管处限定孔的互连层和填充所述间隙以覆盖所述光电二极管的第一聚合物。此外，彩色滤光片层布置在与光电二极管相对的间隙填充聚合物层的顶部，并且布置在互连层上的第二聚合物覆盖并平坦化并钝化滤色器层。在平坦化聚合物的顶部存在与滤色器相对的多个微透镜，并且在微透镜上沉积第三聚合物层以钝化微透镜。根据本发明，聚合物材料由提供热和机械稳定的高折射率的硅氧烷聚合物组成，表现出高裂纹阈值，低孔体积和孔径的致密介电膜。

4. 发明授权

US08728335B2 Method and materials for double patterning 有权
标题翻译：双重图案化的方法和材料
公开(公告)号：US08728335B2
公开(公告)日：2014-05-20
申请号：US13386510
申请日：2010-06-22
申请人： Peng-Fei Fu , Eric Scott Moyer , Jason D. Suhr
发明人： Peng-Fei Fu , Eric Scott Moyer , Jason D. Suhr
IPC分类号： B44C1/22
CPC分类号： H01L21/3122 , C08G77/12 , C08G77/14 , C09D183/06 , G03F7/405 , H01L21/02126 , H01L21/02216 , H01L21/0337
摘要： A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译：在图案化的光刻胶上施加倍半硅氧烷树脂并在图案表面固化，以在图案表面上产生固化的倍半硅氧烷树脂。然后除去未固化的倍半硅氧烷树脂层，留下固化的倍半硅氧烷树脂在图案表面上。去除水平表面上固化的倍半硅氧烷树脂以暴露下面的光致抗蚀剂。去除该光刻胶，留下固化的倍半硅氧烷的图案。可选地，新图案可以被转移到下层中。

5. 发明授权

US08686101B2 Coating liquid for forming low dielectric constant amorphous silica-based coating film and the coating film obtained from the same 有权
标题翻译：用于形成低介电常数无定形二氧化硅基涂膜的涂布液和由其获得的涂膜
公开(公告)号：US08686101B2
公开(公告)日：2014-04-01
申请号：US12086745
申请日：2006-12-15
申请人： Miki Egami , Hiroki Arao , Akira Nakashima , Michio Komatsu
发明人： Miki Egami , Hiroki Arao , Akira Nakashima , Michio Komatsu
IPC分类号： C08G77/08
CPC分类号： H01L21/316 , C01B33/12 , C08G77/50 , C09D183/14 , H01B3/08 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： A coating liquid for forming a low dielectric constant amorphous silica-based coating film with a dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, and also having a smooth surface with an excellent hydrophobicity. The coating liquid contains (1) a silicon compound obtained by hydrolyzing bis(trialkoxysilyl)alkane (BTASA) and alkoxysilane (AS) in the presence of tetraalkylammoniumhydroxide (TAAOH), or (2) a silicon compound obtained by hydrolyzing bis(trialkoxysilyl)alkane (BTASA), alkoxysilane (AS) and tetraalkylorthosilicate (TAOS) in the presence of tetraalkylammoniumhydroxide (TAAOH).
摘要翻译：一种用于形成介电常数为3.0以下，膜强度（杨氏模量）为3.0GPa以上的低介电常数无定形二氧化硅系涂膜的涂布液，并且还具有疏水性优异的光滑表面。涂布液含有（1）在四烷基氢氧化铵（TAAOH）存在下水解双（三烷氧基甲硅烷基）烷烃（BTASA）和烷氧基硅烷（AS））得到的硅化合物，或（2）通过水解双（三烷氧基甲硅烷基）烷烃获得的硅化合物（BTASA），烷氧基硅烷（AS）和四烷基原硅酸盐（TAOS）在四烷基氢氧化铵（TAAOH）存在下。

6. 发明授权

US08524851B2 Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same 有权
标题翻译：基于硅的硬掩模组成和使用其的半导体集成电路器件的制造工艺
公开(公告)号：US08524851B2
公开(公告)日：2013-09-03
申请号：US12805081
申请日：2010-07-12
申请人： Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
发明人： Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
IPC分类号： C08G77/60
CPC分类号： H01L21/31144 , C08G77/16 , C08G77/50 , C08G77/52 , C08G77/70 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/3122 , H01L21/32139
摘要： A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f (1).
摘要翻译：一种硅基硬掩模组合物，包括由式1表示的有机硅烷聚合物：{（SiO 1.5-Y-SiO 1.5）x（R 3 SiO 1.5）y（XSiO 1.5）z}（OH）e（OR 6）f （1）。

7. 发明授权

US08445075B2 Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics 有权
标题翻译：最小化湿法蚀刻底切的方法，并提供极低k（k <2.5）电介质的孔密封
公开(公告)号：US08445075B2
公开(公告)日：2013-05-21
申请号：US12975833
申请日：2010-12-22
申请人： Huiwen Xu , Mei-Yee Shek , Li-Qun Xia , Amir Al-Bayati , Derek Witty , Hichem M'Saad
发明人： Huiwen Xu , Mei-Yee Shek , Li-Qun Xia , Amir Al-Bayati , Derek Witty , Hichem M'Saad
IPC分类号： B05D3/10
CPC分类号： C23C16/308 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76829 , H01L21/76831 , H01L21/76834
摘要： Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.
摘要翻译：提供了在基板上处理膜的方法。在一个方面，所述方法包括在通过在膜上沉积包含硅，碳和任选的氧和/或氮的薄层来从膜去除光致抗蚀剂之后处理图案化的低介电常数膜。薄层为图案化的低介电常数膜提供了富含碳的疏水性表面。薄层还保护低介电常数膜免于随后的湿法清洗工艺和前体渗透，随后沉积在低介电常数膜上。

8. 发明授权

US08440775B2 Curable liquid composition, method of coating, inorganic substrate, and semiconductor device 失效
标题翻译：可固化液体组合物，涂布方法，无机基材和半导体器件
公开(公告)号：US08440775B2
公开(公告)日：2013-05-14
申请号：US12525429
申请日：2008-02-01
申请人： Yukinari Harimoto , Maki Itoh , Dimitris Elias Katsoulis
发明人： Yukinari Harimoto , Maki Itoh , Dimitris Elias Katsoulis
IPC分类号： C08G77/12
CPC分类号： H01L21/3122 , C08G77/12 , C08G77/58 , C08K3/22 , C08K3/36 , C09D183/04 , C09D183/14 , C23C18/1212 , C23C18/122 , C23C18/1241 , C23C18/1245 , C23C18/127 , C23C18/14 , H01L21/02126 , H01L21/02145 , H01L21/02153 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L31/02161 , Y10T428/31663
摘要： A curable liquid composition obtained by subjecting hydrogen halosiloxane or hydrogen alkoxysilane to condensation or to hydrolysis and condensation in an organic solvent in which fine polyvalent metal oxide particles with hydroxyl groups are dispersed; a method of forming a hard silica-type layer by applying onto an inorganic substrate the aforementioned composition and then curing the composition; an inorganic substrate with the aforementioned hard silica-type layer; and a semiconductor device comprising the aforementioned inorganic substrate on which a semiconductor layer is formed.
摘要翻译：通过使氢卤代硅氧烷或氢烷基硅烷在分散有羟基的多价金属氧化物微粒的有机溶剂中进行缩合或水解缩合得到的可固化液体组合物; 通过将上述组合物涂布在无机基材上，然后固化所述组合物来形成硬质二氧化硅型层的方法; 具有上述硬质二氧化硅型层的无机基材; 以及包含上述无机基板的半导体器件，其上形成有半导体层。

9. 发明授权

US08324048B2 Metal capacitor and method of making the same including dielectric layer of different mechanical strength and dielectric constant regions 有权
标题翻译：金属电容器及其制造方法包括不同机械强度和介电常数区域的介电层
公开(公告)号：US08324048B2
公开(公告)日：2012-12-04
申请号：US13342109
申请日：2012-01-01
申请人： Chin-Sheng Yang
发明人： Chin-Sheng Yang
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/4763
CPC分类号： H01L23/5223 , H01L21/3105 , H01L21/312 , H01L21/3122 , H01L21/3124 , H01L21/31612 , H01L21/31629 , H01L21/31695 , H01L21/76825 , H01L21/76826 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A method of making a metal capacitor includes the following steps. A dielectric layer having a dual damascene metal interconnection and a damascene capacitor electrode is provided. Then, a treatment is performed to increase the dielectric constant of the dielectric layer surrounding the damascene capacitor electrode. The treatment can be UV radiation, a plasma treatment or an ion implantation. Accordingly, the metal capacitor will have a higher capacitance and RC delay between the dual damascene metal interconnection and the dielectric layer can be prevented.
摘要翻译：制造金属电容器的方法包括以下步骤。提供具有双镶嵌金属互连和大马士革电容电极的电介质层。然后，进行处理以增加围绕大马士革电容器电极的电介质层的介电常数。治疗可以是紫外线辐射，等离子体处理或离子注入。因此，金属电容器将具有更高的电容，并且可以防止双镶嵌金属互连和电介质层之间的RC延迟。

10. 发明申请

US20120122037A1 Method And Materials For Reverse Patterning 失效
标题翻译：反向图案的方法和材料
公开(公告)号：US20120122037A1
公开(公告)日：2012-05-17
申请号：US13386502
申请日：2010-06-22
申请人： Michael L. Bradford , Eric Scott Moyer , Sheng Wang
发明人： Michael L. Bradford , Eric Scott Moyer , Sheng Wang
IPC分类号： G03F7/20
CPC分类号： H01L21/0337 , C08G77/04 , G03F7/405 , H01L21/02126 , H01L21/02216 , H01L21/3122
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译：将倍半硅氧烷树脂施加在图案化光刻胶的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。随后，含有CF4以将“硅树脂”回蚀刻到光致抗蚀剂材料的顶部的反应离子蚀刻配方，暴露有机基光致抗蚀剂的整个顶表面。然后，第二反应离子蚀刻配方含有O 2以蚀刻掉有机光致抗蚀剂。结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。可选地，新图案可以被转移到下层中。

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