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1. 发明申请

US20180142358A1 METHOD AND REAGENT FOR TREATING BARE COPPER WIRE AND SURFACE-TREATED COPPER WIRE 审中-公开
公开(公告)号：US20180142358A1
公开(公告)日：2018-05-24
申请号：US15701924
申请日：2017-09-12
申请人： Samsung Electronics Co., Ltd.
发明人： Peng ZHANG
IPC分类号： C23C22/07 , C23F11/167
CPC分类号： C23C22/07 , C23F11/1676 , H01L24/85 , H01L2224/85011
摘要： A method for treating a bare copper wire and a surface-treated copper wire includes applying a solution including a phosphoric acid-based chelating agent to a surface of a bare copper wire, and drying the copper wire having the solution including the phosphoric acid-based chelating agent attached on the surface thereof.

2. 发明授权

US09012263B1 Method for treating a bond pad of a package substrate 有权
标题翻译：用于处理封装衬底的焊盘的方法
公开(公告)号：US09012263B1
公开(公告)日：2015-04-21
申请号：US14069103
申请日：2013-10-31
申请人： Varughese Mathew , Burton J. Carpenter , Leo M. Higgins, III
发明人： Varughese Mathew , Burton J. Carpenter , Leo M. Higgins, III
IPC分类号： H01L21/768 , H01L23/48 , H01L23/485 , H01L23/488 , H01L31/00 , H01L23/00
CPC分类号： H01L24/05 , H01L21/4864 , H01L23/3121 , H01L23/49827 , H01L23/49866 , H01L23/49894 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/85 , H01L24/92 , H01L2224/04042 , H01L2224/05599 , H01L2224/26175 , H01L2224/2919 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48228 , H01L2224/48235 , H01L2224/48465 , H01L2224/73265 , H01L2224/85011 , H01L2224/85399 , H01L2224/85447 , H01L2224/8548 , H01L2224/85484 , H01L2224/92247 , H01L2924/00014 , H01L2924/1531 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2224/48227 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A method of making a package substrate having a copper bond pad and a location for receiving a semiconductor die having a remnant of one of a group consisting of HEDP and an HEDP derivative on a top surface of the copper bond pad. The semiconductor die is attached to the substrate. A wirebond connection is attached between the remnant and the semiconductor die.
摘要翻译：一种制造具有铜键合焊盘的封装衬底的方法和用于接收在铜键合焊盘的顶表面上具有由HEDP和HEDP衍生物组成的组中的一种的残留物的半导体管芯的位置。半导体管芯附着在基板上。引线接合连接在残余物和半导体管芯之间。

3. 发明授权

US08012886B2 Leadframe treatment for enhancing adhesion of encapsulant thereto 有权
标题翻译：用于增强密封剂对其粘附的引线框架处理
公开(公告)号：US08012886B2
公开(公告)日：2011-09-06
申请号：US11683234
申请日：2007-03-07
申请人： Yiu Fai Kwan , Tat Chi Chan , Wai Chan , Chi Chung Lee
发明人： Yiu Fai Kwan , Tat Chi Chan , Wai Chan , Chi Chung Lee
IPC分类号： H01L21/31
CPC分类号： C22C1/00 , H01L21/4821 , H01L23/49582 , H01L23/49586 , H01L24/45 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48639 , H01L2224/48655 , H01L2224/48664 , H01L2224/48839 , H01L2224/48855 , H01L2224/48864 , H01L2224/85011 , H01L2224/85439 , H01L2224/85455 , H01L2224/85464 , H01L2924/00014 , H01L2924/01028 , H01L2924/01047 , H01L2924/14 , H01L2924/15747 , Y10S438/909 , Y10S438/974 , H01L2924/00 , H01L2224/48
摘要： A method is provided for treating a leadframe comprising copper or copper alloy to enhance adhesion of molding compound to it. The leadframe is oxidized in an oxidation treatment bath to form copper oxide on the surface of the leadframe. It is then dipped in a complexing or chelating agent to enhance the purity of the copper oxide formed. Thereafter, the leadframe is cleaned with an acid to remove any contaminants remaining on the leadframe.
摘要翻译：提供了一种处理包含铜或铜合金的引线框以增强模塑料对其的粘附性的方法。引线框在氧化处理槽中氧化，在引线框的表面形成氧化铜。然后将其浸入络合剂或螯合剂中以提高形成的氧化铜的纯度。此后，用酸清洁引线框架以除去留在引线框架上的任何污染物。

4. 发明申请

US20100101962A1 Immersion method 审中-公开
标题翻译：浸入法
公开(公告)号：US20100101962A1
公开(公告)日：2010-04-29
申请号：US12655333
申请日：2009-12-29
申请人： Danny Lau , Raymund W. M. Kwok , Fai Lung Ting , Jeffrey N. Crosby
发明人： Danny Lau , Raymund W. M. Kwok , Fai Lung Ting , Jeffrey N. Crosby
IPC分类号： C25D5/12 , C25D3/00 , C25D3/30
CPC分类号： C23F11/167 , C23C22/08 , C23C22/74 , C23C22/82 , C25D5/48 , H01L2224/48247 , H01L2224/85011 , H05K3/244 , H05K3/282 , H05K2203/0789
摘要： A composition and method for inhibiting corrosion is disclosed. Metals and metal alloys are treated with compositions which contain inorganic and organic acids that prevent oxide formation on the metals and metal alloys.
摘要翻译：公开了一种抑制腐蚀的组合物和方法。用含有无机和有机酸的组合物处理金属和金属合金，防止在金属和金属合金上形成氧化物。

5. 发明申请

US20080216921A1 LEADFRAME TREATMENT FOR ENHANCING ADHESION OF ENCAPSULANT THERETO 有权
标题翻译：用于增强粘合剂的粘合剂的治疗
公开(公告)号：US20080216921A1
公开(公告)日：2008-09-11
申请号：US11683234
申请日：2007-03-07
申请人： Yiu Fai KWAN , Tat Chi CHAN , Wai CHAN , Chi Chung LEE
发明人： Yiu Fai KWAN , Tat Chi CHAN , Wai CHAN , Chi Chung LEE
IPC分类号： C22C1/00
CPC分类号： C22C1/00 , H01L21/4821 , H01L23/49582 , H01L23/49586 , H01L24/45 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48639 , H01L2224/48655 , H01L2224/48664 , H01L2224/48839 , H01L2224/48855 , H01L2224/48864 , H01L2224/85011 , H01L2224/85439 , H01L2224/85455 , H01L2224/85464 , H01L2924/00014 , H01L2924/01028 , H01L2924/01047 , H01L2924/14 , H01L2924/15747 , Y10S438/909 , Y10S438/974 , H01L2924/00 , H01L2224/48
摘要： A method is provided for treating a leadframe comprising copper or copper alloy to enhance adhesion of molding compound to it. The leadframe is oxidized in an oxidation treatment bath to form copper oxide on the surface of the leadframe. It is then dipped in a complexing or chelating agent to enhance the purity of the copper oxide formed. Thereafter, the leadframe is cleaned with an acid to remove any contaminants remaining on the leadframe.
摘要翻译：提供了一种处理包含铜或铜合金的引线框以提高模塑料对其的粘附性的方法。引线框在氧化处理槽中氧化，在引线框的表面形成氧化铜。然后将其浸入络合剂或螯合剂中以提高形成的氧化铜的纯度。此后，用酸清洁引线框架以除去留在引线框架上的任何污染物。

6. 发明申请

US20040256704A1 Apparatus and method extending flip-chip pad structures for wirebonding on low-k dielectric silicon 有权
标题翻译：用于在低k电介质硅上引线接合的倒装芯片焊盘结构的装置和方法
公开(公告)号：US20040256704A1
公开(公告)日：2004-12-23
申请号：US10465171
申请日：2003-06-18
申请人： Intel Corporation
发明人： Ranjan J. Mathew
IPC分类号： H01L023/02
CPC分类号： H01L24/05 , H01L24/03 , H01L24/10 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05553 , H01L2224/05555 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48463 , H01L2224/48647 , H01L2224/48847 , H01L2224/85011 , H01L2224/85205 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/0105 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/20751 , H01L2924/20752 , H01L2924/00014 , H01L2924/00 , H01L2924/20755 , H01L2924/2075 , H01L2924/20754
摘要： A method and apparatus for making pad structures suitable for wirebonding and, optionally, also for solder-ball connections. Some embodiments include an electronics chip having a substrate with circuitry, a compliant electrically insulating layer deposited on at least a portion of the substrate, and an electrical connection pad, the pad having an electrical connection to the circuitry through an aperture in the insulating layer and a peripheral bonding zone region extending over the insulating layer. In some embodiments, the bonding zone is exclusively over the insulating layer outside of the aperture. In some embodiments, the pads are suitable for both solder-ball and wirebond connections. By making a wirebond connection to an area of a pad over the compliant insulating layer, the underlying circuitry is protected from ultrasonic energy of the bonding process.
摘要翻译：一种用于制造适于引线键合的焊盘结构的方法和装置，以及用于焊球连接的方法和装置。一些实施例包括具有电路的基板的电子芯片，沉积在基板的至少一部分上的柔性电绝缘层和电连接焊盘，该焊盘通过绝缘层中的孔与电路电连接，在绝缘层上延伸的周边粘结区域。在一些实施例中，接合区仅在孔的外侧的绝缘层上。在一些实施例中，焊盘适用于焊球和引线接合两者。通过在柔性绝缘层上形成与焊盘区域的引线键合连接，保护底层电路免受接合过程的超声波能量的影响。

7. 发明授权

US5632438A Direct chip attachment process and apparatus for aluminum wirebonding on copper circuitization 失效
标题翻译：直接芯片连接工艺和铝线接线铜电路设备
公开(公告)号：US5632438A
公开(公告)日：1997-05-27
申请号：US541256
申请日：1995-10-12
申请人： Mark K. Hoffmeyer , Gregg A. Knotts , Connie J. Mathison
发明人： Mark K. Hoffmeyer , Gregg A. Knotts , Connie J. Mathison
IPC分类号： H01L21/48 , H01L21/60 , H01L21/603
CPC分类号： H01L24/85 , H01L21/4864 , H01L24/32 , H01L24/83 , H01L2224/2919 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/8319 , H01L2224/83801 , H01L2224/8501 , H01L2224/85011 , H01L24/45 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/14 , H01L2924/181
摘要： A direct chip attachment process and apparatus for aluminum wirebonding on copper circuitization are provided. After at least one integrated circuit chip is attached to a carrier, an aqueous cleaning solution containing citric and oxalic acid based additives is applied to the carrier and attached integrated circuit chip. Then a deionized water rinse is applied to the carrier and attached integrated circuit chip, followed drying for a set time period. Next wirebonding on copper circuitization carried by the carrier is performed.
摘要翻译：提供了用于铜电路上的铝线接合的直接芯片附接工艺和装置。在至少一个集成电路芯片附着到载体上之后，将含有柠檬酸和草酸的添加剂的含水清洗溶液施加到载体和附着的集成电路芯片上。然后将去离子水冲洗物施加到载体和附接的集成电路芯片上，然后干燥一段固定的时间。执行由载体承载的铜电路的下一次引线接合。

8. 发明授权

US07632759B2 Semiconductor device with front side metallization and method for the production thereof 有权
标题翻译：具有前侧金属化的半导体器件及其制造方法
公开(公告)号：US07632759B2
公开(公告)日：2009-12-15
申请号：US11532270
申请日：2006-09-15
申请人： Josef Hoeglauer , Ralf Otremba
发明人： Josef Hoeglauer , Ralf Otremba
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/31 , H01L21/469
CPC分类号： H01L24/40 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/37 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/05556 , H01L2224/05639 , H01L2224/05655 , H01L2224/37147 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4847 , H01L2224/48639 , H01L2224/48655 , H01L2224/48739 , H01L2224/48755 , H01L2224/48839 , H01L2224/48855 , H01L2224/85011 , H01L2224/85201 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/2076 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device (2) has a semiconductor chip (16) the front side (1) of which has integrated circuit elements and an electrically conductive metallization structure (3) with chip contact areas (9). The metallization structure (3) has an electrically conductive patterned adhesion layer (6), which provides a low-resistance contact with silicon, and an electrically conductive patterned intermediate layer (7), which provides a connectable surface. Furthermore, a passivation layer (8) is provided, which covers the top side and the edge sides of the intermediate layer (7) whilst leaving the chip contact area (9) free. The intermediate layer (7) comprises Ni and is free of noble metals. The intermediate layer (7) is at least 10 times thicker than the adhesion layer (6).
摘要翻译：半导体器件（2）具有其前侧（1）具有集成电路元件的半导体芯片（16）和具有芯片接触区域（9）的导电金属化结构（3）。金属化结构（3）具有提供与硅的低电阻接触的导电图案化粘附层（6）和提供可连接表面的导电图案化中间层（7）。此外，提供钝化层（8），其覆盖中间层（7）的顶侧和边缘侧，同时使芯片接触区域（9）离开。中间层（7）包含Ni并且不含贵金属。中间层（7）比粘合层（6）厚至少10倍。

9. 发明申请

US20050258549A1 Apparatus and method extending flip-chip pad structures for wirebonding on low-k dielectric silicon 有权
标题翻译：用于在低k电介质硅上引线接合的倒装芯片焊盘结构的装置和方法
公开(公告)号：US20050258549A1
公开(公告)日：2005-11-24
申请号：US11172717
申请日：2005-06-30
申请人： Ranjan Mathew
发明人： Ranjan Mathew
IPC分类号： H01L23/485 , H01L23/02 , H01L23/52
CPC分类号： H01L24/05 , H01L24/03 , H01L24/10 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05553 , H01L2224/05555 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48463 , H01L2224/48647 , H01L2224/48847 , H01L2224/85011 , H01L2224/85205 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/0105 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/20751 , H01L2924/20752 , H01L2924/00014 , H01L2924/00 , H01L2924/20755 , H01L2924/2075 , H01L2924/20754
摘要： A method and apparatus for making pad structures suitable for wirebonding and, optionally, also for solder-ball connections. Some embodiments include an electronics chip having a substrate with circuitry, a compliant electrically insulating layer deposited on at least a portion of the substrate, and an electrical connection pad, the pad having an electrical connection to the circuitry through an aperture in the insulating layer and a peripheral bonding zone region extending over the insulating layer. In some embodiments, the bonding zone is exclusively over the insulating layer outside of the aperture. In some embodiments, the pads are suitable for both solder-ball and wirebond connections. By making a wirebond connection to an area of a pad over the compliant insulating layer, the underlying circuitry is protected from ultrasonic energy of the bonding process.
摘要翻译：一种用于制造适于引线键合的焊盘结构的方法和装置，以及用于焊球连接的方法和装置。一些实施例包括具有电路的基板的电子芯片，沉积在基板的至少一部分上的柔性电绝缘层以及电连接焊盘，该焊盘通过绝缘层中的孔与电路电连接，在绝缘层上延伸的周边粘结区域。在一些实施例中，接合区仅在孔的外侧的绝缘层上。在一些实施例中，焊盘适用于焊球和引线接合两者。通过在柔性绝缘层上形成与焊盘区域的引线键合连接，保护底层电路免受接合过程的超声波能量的影响。

10. 发明申请

US20040212049A1 Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20040212049A1
公开(公告)日：2004-10-28
申请号：US10853139
申请日：2004-05-26
申请人： Kabushiki Kaisha Toshiba
发明人： Tadao Fukatani , Hiroshi Masuda , Koji Motonami
IPC分类号： H01L023/495
CPC分类号： H01L21/4821 , H01L23/49586 , H01L24/45 , H01L24/48 , H01L2224/45014 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/85011 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises: a semiconductor chip; a base metal lead frame with no residual of a rustproof film, including a die pad mounted with said semiconductor chip, and a plurality of leads disposed so that inner ends of said leads are positioned along the periphery of said die pad; copper wires to directly connect electrodes on said semiconductor chip to the inner ends of said plurality of leads; and a resin molded member to hermetically seal said semiconductor chip, a large proportion of said lead frame and said copper wires. A method of manufacturing a semiconductor device comprises: preparing a base metal lead frame including a die pad and a plurality of leads disposed so that inner ends of said leads are positioned along the periphery of said die pad; applying a non-benzotriazole series rustproof agent on the surface of said lead frame; performing die-bonding for fixing a semiconductor chip onto said die pad in a heated atmosphere by use of a non-metal series paste; performing wire-bonding to connect said electrodes on said semiconductor chip to the inner ends of said leads of said lead frame by use of copper wires; forming resin molded member by sealing said lead frame with a resin excluding some portions of said leads; and forming leads protruding from said resin molded member.
摘要翻译：半导体器件包括：半导体芯片; 具有不含有防锈膜残留物的基底金属引线框架，包括安装有所述半导体芯片的管芯焊盘，以及多个引线，其布置成使得所述引线的内端沿着所述管芯焊盘的周边定位; 铜线将所述半导体芯片上的电极直接连接到所述多个引线的内端; 以及树脂模制件，以密封所述半导体芯片，所述引线框架和所述铜线的大部分。一种制造半导体器件的方法包括：制备包括管芯焊盘和设置成使得所述引线的内端沿着所述管芯焊盘的周边定位的多个引线的母材金属引线框架; 在所述引线框架的表面上施加非苯并三唑系防锈剂; 通过使用非金属系列浆料在加热的气氛中进行芯片接合以将半导体芯片固定在所述芯片焊盘上; 通过使用铜线将所述半导体芯片上的所述电极连接到所述引线框架的所述引线的内端; 通过用不包括所述引线的一些部分的树脂密封所述引线框架来形成树脂模制构件; 以及从所述树脂模制件突出的成形引线。

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